| Patents for C30B 19 - Liquid-phase epitaxial-layer growth (1,562) |
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| 03/05/2015 | WO2015029649A1 N-TYPE SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME |
| 03/05/2015 | US20150064915 Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers |
| 03/05/2015 | US20150064496 Single crystal copper, manufacturing method thereof and substrate comprising the same |
| 03/05/2015 | US20150064440 Production method of zeolite film in which one axis is completely vertically oriented, using steam under synthetic gel-free condition |
| 03/05/2015 | US20150059818 METHOD OF PRODUCING FILM OF SURFACE Nb-CONTAINING La-STO CUBIC CRYSTAL PARTICLES |
| 02/26/2015 | DE112010001116B4 Verfahren zum Herstellen eines SiC-Einkristalls A method for producing an SiC single crystal |
| 02/24/2015 | US8963166 III nitride crystal substrate and light-emitting device |
| 02/24/2015 | US8962456 Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device |
| 02/17/2015 | US8956952 Multilayer substrate structure and method of manufacturing the same |
| 02/17/2015 | US8956804 Self-assemblable polymer and methods for use in lithography |
| 02/12/2015 | WO2015020225A1 Apparatus and method for manufacturing group 13 nitride crystal |
| 02/11/2015 | CN104350186A SiC单晶锭、SiC单晶以及制造方法 SiC single crystal ingot, SiC single crystal and a method for producing |
| 02/04/2015 | CN104328487A 一种具有纯化母液功能的双衬底槽液相外延石墨舟 Dual substrate having a purification bath liquor functional phase epitaxy graphite boat |
| 02/03/2015 | US8945302 Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer |
| 01/29/2015 | WO2015012190A1 METHOD FOR PRODUCING SiC SUBSTRATES |
| 01/22/2015 | US20150024223 Monolithic integrated lattice mismatched crystal template and preparation method thereof |
| 01/15/2015 | US20150017466 Self-aligned tunable metamaterials |
| 01/15/2015 | US20150014586 Method of making quantum dots |
| 01/15/2015 | US20150013590 Seed crystal holding shaft for use in single crystal production device, and method for producing single crystal |
| 01/15/2015 | US20150013589 Method of making quantum dots |
| 01/06/2015 | US8926750 Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals |
| 12/24/2014 | CN104246027A 复合基板及功能元件 Composite substrate and functional elements |
| 12/24/2014 | CN104246026A SiC单晶及其制造方法 SiC single crystal and manufacturing method thereof |
| 12/24/2014 | CN104233469A 一种倒置生长rebco块材的方法 A growth rebco bulk inversion method |
| 12/24/2014 | CN104233457A 制造第III族氮化物半导体晶体的方法及制造GaN衬底的方法 The method of manufacturing a group III nitride semiconductor crystal and a method of manufacturing a GaN substrate |
| 12/23/2014 | US8916124 Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same |
| 12/10/2014 | CN102449208B SiC单晶的制造方法 The method of producing single crystal SiC |
| 11/06/2014 | US20140328742 Method for producing group iii nitride crystal, group iii nitride crystal, and semiconductor device |
| 10/28/2014 | US8871169 Methods and apparatuses for manufacturing cast silicon from seed crystals |
| 10/16/2014 | US20140305369 Method of Producing Crystals of Nitrides of Group 13 Elements and Melt Compositions |
| 09/18/2014 | US20140272397 Zinc oxide-cellulose nanocomposite and preparation method thereof |
| 09/18/2014 | US20140261156 Method of Forming a Crystallized Silicon Layer on the Surface of a Plurality of Substrates |
| 09/12/2014 | WO2014136903A1 Method for producing silicon carbide single crystal |
| 09/10/2014 | EP2775015A1 SiC SINGLE CRYSTAL MANUFACTURING METHOD |
| 08/27/2014 | EP2770089A1 Method for producing nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table produced by said production method |
| 08/27/2014 | EP2769421A1 Piezoelectric materials and methods of property control |
| 08/26/2014 | US8815011 Magnetic garnet single crystal and optical element using same as well as method of producing single crystal |
| 08/13/2014 | EP2764139A1 Method of forming a crystallised silicon layer on the surface of a plurality of substrates |
| 08/13/2014 | CN203768488U 减少碲镉汞液相外延材料表面粘液的生长装置 Reducing the growth of HgCdTe LPE device surface mucus |
| 08/13/2014 | CN203768484U 一种用于浸渍式碲镉汞液相外延的温度控制装置 An immersion HgCdTe LPE temperature control device for |
| 08/13/2014 | CN203768483U 用于浸渍式碲镉汞液相外延的样品架 Dip for HgCdTe LPE sample holder |
| 07/16/2014 | CN103930601A SiC单晶的制造方法 The method of producing single crystal SiC |
| 07/16/2014 | CN102383190B 一种可连续生长多层膜的防止母液残留的液相外延石墨舟 One kind of continuous growth of the multilayer film to prevent residual mother liquor graphite boat liquid phase epitaxy |
| 07/02/2014 | EP2749675A1 Semiconductor wafer manufacturing method, and semiconductor wafer |
| 07/02/2014 | CN103898600A 一种降低GaAs薄膜杂质含量的制备方法 A process for preparing GaAs film is reduced impurity content |
| 06/26/2014 | WO2014098261A1 Seed crystal substrate, composite substrate and function element |
| 06/25/2014 | CN103882527A 一种减少碲镉汞液相外延材料表面粘液的生长装置 A method of reducing mercury cadmium telluride material surface mucus LPE growth apparatus |
| 06/18/2014 | EP2743382A1 Method for peeling group 13 element nitride film |
| 06/18/2014 | CN102414348B Method for fabricating SIC substrate |
| 06/12/2014 | WO2014086283A1 Electrostatic chuck and plasma processing device |
| 06/12/2014 | US20140158041 Method and device for fabricating a layer in semiconductor material |
| 06/11/2014 | CN103857835A Semiconductor wafer manufacturing method, and semiconductor wafer |
| 06/11/2014 | CN103849930A Temperature control device and temperature control method for impregnated tellurium, cadmium and mercury liquid phase epitaxy |
| 06/11/2014 | CN103849929A Sample holder for immersion type tellurium-cadmium-mercury rheotaxy |
| 06/05/2014 | DE112012003278T5 Filme von Nitriden von Gruppe-13-Elementen und geschichteter Körper, der dieselben beinhaltet Movies of nitrides of Group 13 elements and layered body including the same |
| 05/21/2014 | CN103814160A 复合基板、其制造方法、13族元素氮化物构成的功能层的制造方法以及功能元件 Composite substrate, its manufacturing method, a method of manufacturing the functional layer 13 of the nitride elements and functional elements |
| 05/14/2014 | CN203593809U 一种SiO<sub>2</sub>钝化层的液相沉积装置 One kind of SiO <sub> liquid deposition device 2 </ sub> passivation layer |
| 05/08/2014 | WO2014013305A8 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL BY USING THE PRODUCTION APPARATUS AND CRUCIBLE USED IN THE PRODUCTION APPARATUS |
| 05/07/2014 | CN103774227A 一种锰氧化物外延薄膜及其制备方法 One kind of manganese oxide epitaxial film and preparation method |
| 04/30/2014 | CN203569235U Vertical liquid-phase epitaxial furnace |
| 04/30/2014 | CN103764881A Semiconductor formation by lateral diffusion liquid phase epitaxy |
| 04/29/2014 | US8709923 Method of manufacturing III-nitride crystal |
| 04/24/2014 | US20140113232 Self-assemblable polymer and methods for use in lithography |
| 04/23/2014 | EP2722422A1 Apparatus for producing sic single crystal by solution growth method, method for producing sic single crystal using apparatus for producing sic single crystal by solution growth method, and crucible used in apparatus for producing sic single crystal by solution growth method |
| 04/23/2014 | EP2722421A1 Apparatus and method for producing sic single crystal |
| 04/16/2014 | CN103732809A Method for peeling group 13 element nitride film |
| 04/16/2014 | CN103726106A Epitaxial growth method |
| 04/02/2014 | CN103696009A Method for preparing alpha-axis alignment high-temperature superconductive film in air |
| 04/01/2014 | US8685163 Method for growing silicon carbide single crystal |
| 03/27/2014 | US20140083352 LOW TEMPERATURE CONTINUOUS CIRCULATION REACTOR FOR THE AQUEOUS SYNTHESIS OF ZnO FILMS, NANOSTRUCTURES, AND BULK SINGLE CRYSTALS |
| 03/27/2014 | DE112010000867B4 Herstellungsverfahren für SiC-Einkristall vom n-Typ, dadurch erhaltener SiC-Einkristall vom n-Typ und dessen Anwendung Manufacturing method for SiC single crystal n-type, characterized got SiC single crystal n-type and its application |
| 03/26/2014 | CN103668443A Group III nitride semiconductor single crystal, method for producing same, self-standing substrate, and semiconductor device |
| 03/25/2014 | US8679248 GaN whiskers and methods of growing them from solution |
| 03/13/2014 | WO2014038172A1 APPARATUS AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL |
| 03/13/2014 | US20140069325 Pattern forming method |
| 03/12/2014 | CN102197168B Method and apparatus for manufacturing SiC single crystal film |
| 03/11/2014 | US8668774 Low temperature continuous circulation reactor for the aqueous synthesis of ZnO films, nanostructures, and bulk single crystals |
| 03/06/2014 | WO2014034424A1 Method for producing sic single crystal |
| 03/06/2014 | WO2014034338A1 Composite substrate, method for manufacturing same, method for manufacturing functional layer formed of group 13 element nitride, and functional element |
| 03/06/2014 | WO2014034081A1 Crystal production device, production method for sic single crystals, and sic single crystal |
| 03/06/2014 | WO2014034080A1 3c-sic single crystal and production method therefor |
| 03/06/2014 | WO2014033826A1 SiC SEMICONDUCTOR THIN FILM AND PRODUCTION METHOD THEREFOR |
| 03/06/2014 | WO2014013305A3 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL BY SOLUTION GROWTH METHOD, AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL BY USING THE PRODUCTION APPARATUS AND CRUCIBLE USED IN THE PRODUCTION APPARATUS |
| 03/06/2014 | US20140065368 Superhydrophobic films and methods for making superhydrophobic films |
| 03/05/2014 | CN103620096A Method for manufacturing group 13 element nitride crystal and solvent composition |
| 03/05/2014 | CN103620094A Apparatus and method for producing SiC single crystal |
| 02/26/2014 | CN103603040A Low temperature liquid phase growing method for preparing ZnO nanocone array |
| 02/20/2014 | WO2014028283A2 SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION |
| 02/20/2014 | US20140048013 SEED LAYER FOR ZnO AND DOPED-ZnO THIN FILM NUCLEATION AND METHODS OF SEED LAYER DEPOSITION |
| 02/20/2014 | US20140048012 Methods and apparatuses for manufacturing cast silicon from seed crystals |
| 02/19/2014 | CN103597129A Apparatus for producing SiC single crystal by solution growth method, method for producing SiC single crystal using apparatus for producing SiC single crystal by solution growth method, and crucible used in apparatus for producing SiC single crystal |
| 02/13/2014 | WO2014025003A1 Composite substrate and functional element |
| 02/12/2014 | CN103572370A Bismuth ytterbnate single crystal epitaxial film and preparation method thereof |
| 02/06/2014 | WO2014020694A1 Single crystal silicon carbide substrate and method for manufacturing same |
| 02/05/2014 | CN103562443A Method for producing sic single crystals and production device |
| 01/30/2014 | WO2014017648A1 Crucible, device for crystal growth, and method for crystal growth |
| 01/29/2014 | EP2690205A1 Method for producing sic single crystals and production device |
| 01/29/2014 | EP2688847A1 Method for surfactant crystal growth of a metal-nonmetal compound |
| 01/23/2014 | WO2014013773A1 SiC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR |
| 01/23/2014 | WO2014013698A1 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL |