Patents
More topics under "C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor" (88,796)
C30B 1 - Single-crystal growth directly from the solid state (1,958)
C30B 11 - Single-crystal-growth by normal freezing or freezing under temperature gradient, e.g. bridgman- stockbarger method (5,247)
C30B 13 - Single-crystal growth by zone-melting; Refining by zone-melting (2,141)
C30B 15 - Single-crystal growth by pulling from a melt, e.g. czochralski method (9,854)
C30B 17 - Single-crystal growth on to a seed which remains in the melt during growth, e.g. nacken-kyropoulos method (494)
C30B 19 - Liquid-phase epitaxial-layer growth (1,562)
C30B 21 - Unidirectional solidification of eutectic materials (831)
C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
C30B 27 - Single-crystal growth under a protective fluid (584)
C30B 28 - Production of homogeneous polycrystalline material with defined structure (2,968)
C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
C30B 3 - Unidirectional demixing of eutectoid materials (65)
C30B 30 - Production of single crystals or homogeneous polycrystalline material with defined structure characterised by the action of electric or magnetic fields, wave energy or other specific physical conditions (965)
C30B 31 - Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor (2,201)
C30B 33 - After-treatment of single crystals or homogeneous polycrystalline material with defined structure (6,009)
C30B 35 - Apparatus not otherwise provided for, specially adapted for the growth, production or after-treatment of single crystals or of a homogeneous polycrystalline material with defined structure (2,584)
C30B 5 - Single-crystal growth from gels (452)
C30B 7 - Single-crystal growth from solutions using solvents which are liquid at normal temperature, e.g. aqueous solutions (3,917)
C30B 9 - Single-crystal growth from melt solutions using molten solvents (1,363)
Patents for C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor (60)
12/2013
12/05/2013US20130319863 Methods, compositions, and kits for protein crystallization
05/2013
05/21/2013US8444838 Methods, compositions, and kits for protein crystallization
10/2011
10/18/2011US8038792 Methods and apparatus for rapid crystallization of biomolecules
09/2009
09/29/2009US7596455 Crystallization of IGF-1
09/03/2009US20090218547 Methods, compositions, and kits for protein crystallization
08/2009
08/26/2009EP1664398A4 Methods and apparatus for rapid crystallization of biomolecules
04/2009
04/23/2009US20090101491 Methods and apparatus for rapid crystallization of biomolecules
04/02/2009WO2005054548A3 Methods, compositions, and kits for protein crystallization
12/2008
12/03/2008CN100439397C Crystallization of IGF-1
12/02/2008US7459021 Methods and apparatus for rapid crystallization of biomolecules
11/2008
11/06/2008US20080271994 Method and Apparatus for Using an Electric Field for Controlling of the Crystallizing Material or Materials
10/2008
10/29/2008EP1346087A4 Energy pathway arrangement
10/07/2008US7433788 Crystallization of IGF-1
09/2008
09/11/2008DE19932026B4 Einrichtung zum Züchten von Kristallen mittels des Czochralski-Verfahrens, bei dem die Kristalle während des Züchtungsprozesses sowohl aus der Schmelze gezogen als auch um eine Achse gedreht werden Be means for growing crystals by the Czochralski method, in which the crystals was removed during the growth process both from the melt and rotated about an axis
05/2008
05/21/2008EP1922438A1 Method and apparatus using of the electric field for controlling of the crystallizing of material or materials
04/2008
04/08/2008US7354769 Comparing the ability of N,N-bis(3-D-gluconamidopropyl)-deoxycholamine to inhibit binding of IGFBP-1 or -3 to IGF-1 with the ability of a candidate indirect agonist of IGF-1 to identify effective agonists
11/2007
11/20/2007US7297763 Mixture of IGF-1 and N,N-bis(3-D-gluconamidopropyl)-deoxycholamine that binds specifically to IGF-1 and blocks binding of IGFBP-1 and IGFBP-3; used as a standard for identifying IGF-1 indirect agonists
07/2007
07/03/2007US7238658 Treating agonist disorders including obesity, and hyperglycemic, whole body growth, immunological, kidney, neurological and neuromuscular disorders by administering a crystal of an insulin-like growth factor-1 that diffracts x-ray radiation to produce a three-dimensional diffraction pattern
06/2007
06/27/2007EP1801120A1 Co-crystalline complex of IGF-1 and methods of identifying indirect agonists of IGF-1 using the same
04/2007
04/11/2007EP1772464A2 Methods of identifying indirect agonists of IGF-1
02/2007
02/15/2007WO2007017552A1 Method and apparatus using of the electric field for controlling of the crystallizing of material or materials
02/14/2007CN1301050C Energy Pathway Arrangement
02/06/2007US7172813 includes a thin layer of single crystal zinc oxide deposited on an self supporting substrate (crystalline, polycrystalline, and amorphous ) surface by a chemical deposition process
12/2006
12/28/2006US20060293507 Crystallization of IGF-1
12/27/2006EP1358209B1 Crystallization of igf-1
12/21/2006US20060287510 Crystallization of IGF-1
12/21/2006US20060287235 Crystallization of IGF-1
12/14/2006US20060281905 Crystallization of IGF-1
12/07/2006US20060276397 Crystallization of IGF-1
11/2006
11/30/2006US20060270839 Crystallization of IGF-1
08/2006
08/10/2006WO2006083169A1 Method for charging a crucible with solar grade silicon
08/01/2006US7084240 Crystallization of IGF-1
06/2006
06/29/2006US20060137603 Methods and apparatus for rapid crystallization of biomolecules
06/07/2006EP1664398A2 Methods and apparatus for rapid crystallization of biomolecules
11/2005
11/30/2005CN1703425A Crystallization of IGF-1
09/2005
09/29/2005US20050215477 Treating agonist disorderssuch asd diabetes, obesity, heart dysfunctions, AIDS-related wasting, and kidney, neurological, whole body growth disorders by administering a crystal of an insulin-like growth factor-1 that diffracts x-ray radiation to produce a three-dimensional diffraction pattern
09/15/2005US20050202405 Methods, compositions, and kits for protein crystallization
08/2005
08/11/2005WO2004104274A3 Zinc oxide crystal growth substrate
06/2005
06/16/2005WO2005054548A2 Methods, compositions, and kits for protein crystallization
05/2005
05/12/2005WO2005021841A3 Methods and apparatus for rapid crystallization of biomolecules
04/2005
04/14/2005WO2005007934A3 Method for producing piezoelectric monocrystals having a polydomain structure for accurate positioning devices
03/2005
03/10/2005WO2005021841A2 Methods and apparatus for rapid crystallization of biomolecules
03/10/2005CA2537636A1 Methods and apparatus for rapid crystallization of biomolecules
01/2005
01/27/2005WO2005007934A2 Method for producing piezoelectric monocrystals having a polydomain structure for accurate positioning devices
12/2004
12/02/2004WO2004104274A2 Zinc oxide crystal growth substrate
11/2004
11/25/2004US20040234823 Zinc oxide crystal growth substrate
03/2004
03/31/2004CN1486582A Energy Pathway Arrangement
03/03/2004CN1140914C Method for mfg. semiconductor structure having crystalline alkaline earth metal oxide interface with silicon
11/2003
11/05/2003EP1358209A2 Crystallization of igf-1
09/2003
09/24/2003EP1346087A2 Energy pathway arrangement
07/2003
07/31/2003WO2002064627A3 Crystallization of igf-1
06/2003
06/05/2003WO2002059401A3 Energy pathway arrangement
11/2002
11/07/2002US20020165155 Crystallization of IGF-1
09/2002
09/26/2002WO2002059401A8 Energy pathway arrangement
09/05/2002US20020122286 Energy pathway arrangement
08/2002
08/22/2002WO2002064627A2 Crystallization of igf-1
08/22/2002CA2431033A1 Crystallization of igf-1
08/01/2002WO2002059401A2 Energy pathway arrangement
02/2002
02/06/2002CN1334593A Method for mfg. semioconductor structure having crystalline alkaline earth metal oxide interface with silicon
01/2001
01/11/2001DE19932026A1 Device for growing silicon crystals by the Czochralski method comprises a first inductive resistor connected to a rotating head, a second inductive resistor connected to an alternating current source, and electrical connecting lines