Patents for C30B 23 - Single-crystal growth by condensing evaporated or sublimed materials (5,192)
03/2015
03/05/2015US20150059641 Bulk diffusion crystal growth process
02/2015
02/26/2015US20150054134 Silicon wafer and manufacturing method thereof
02/24/2015US8963166 III nitride crystal substrate and light-emitting device
02/24/2015US8962365 Method of manufacturing GaN-based film and composite substrate used therefor
02/24/2015US8961920 Methods of altering the color of a diamond by irradiation and high-pressure/high-temperature processing
02/17/2015US8956952 Multilayer substrate structure and method of manufacturing the same
02/11/2015CN104350187A 制造碳化硅基板的方法 The method of producing a silicon carbide substrate
02/10/2015US8952494 Group III nitride semiconductor substrate having a sulfide in a surface layer
02/03/2015US8945304 Ultrahigh vacuum process for the deposition of nanotubes and nanowires
02/03/2015US8945302 Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer
01/2015
01/29/2015WO2015012190A1 METHOD FOR PRODUCING SiC SUBSTRATES
01/28/2015CN104313685A 一种具有交换偏置效应的铁氧化物薄膜及其制备方法 An iron oxide film and preparation method has the effect of exchange bias
01/28/2015CN104313684A 一种制备六方氮化硼二维原子晶体的方法 A method of two-dimensional atomic crystal hexagonal boron nitride prepared
01/27/2015US8940266 Large diamond crystal substrates and methods for producing the same
01/27/2015US8940093 Method of controlling an epitaxial growth process in an epitaxial reactor
01/22/2015US20150024223 Monolithic integrated lattice mismatched crystal template and preparation method thereof
01/22/2015US20150020731 Defect reduction in seeded aluminum nitride crystal growth
01/20/2015US8937339 Si(1-V-W-X)CWAlXNV substrate, and epitaxial wafer
01/20/2015US8937335 Gallium nitride devices with aluminum nitride intermediate layer
01/20/2015US8937332 Wavelength converter for an LED and LED containing same
01/20/2015US8936682 Method of manufacturing homogeneous silicon carbide single crystal with low potential of generating defects
01/20/2015US8936680 Crucible vessel and crucible cover having grooves for producing single-crystal silicon carbide, production apparatus and method
01/20/2015CA2759530C Apparatus for manufacturing aluminum nitride single crystal, method for manufacturing aluminum nitride single crystal, and aluminum nitride single crystal
01/15/2015US20150017466 Self-aligned tunable metamaterials
01/15/2015US20150013592 Defect reduction in seeded aluminum nitride crystal growth
01/14/2015CN204097596U 碳化硅单晶生长炉的测温孔自清理装置 SiC single crystal growth furnace temperature Kongzi Qing processing device
01/14/2015CN104285001A 金刚石载氮化镓晶片以及制造设备和制造方法 Diamond gallium nitride wafer carrier and the manufacturing method and manufacturing apparatus
01/14/2015CN104278322A 制造碳化硅单晶的方法和碳化硅单晶衬底 The method of producing a silicon carbide single crystal and a silicon carbide single crystal substrate
01/13/2015US8933538 Oxygen-doped gallium nitride single crystal substrate
01/13/2015US8933436 Ordered organic-organic multilayer growth
01/08/2015US20150010726 Method of manufacturing silicon carbide single crystal and silicon carbide single crystal substrate
01/07/2015EP2820173A1 Gallium-nitride-on-diamond wafers and manufacturing equipment and methods of manufacture
01/07/2015CN102477579B 获取ZnSe/ZnS光学基元的方法 Get ZnSe / ZnS Optical primitive methods
01/06/2015US8928035 Gallium nitride devices with gallium nitride alloy intermediate layer
01/06/2015US8928034 Gallium nitride devices with aluminum nitride alloy intermediate layer
01/06/2015US8928000 Nitride semiconductor wafer including different lattice constants
01/06/2015US8927435 Load lock having secondary isolation chamber
01/01/2015US20150004435 Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
12/2014
12/31/2014CN102569480B 一种纳米结构的氧化亚铜基pin结太阳能电池及其制备方法 Nitrous oxide copper-based pin-junction solar cell and method for preparing nanostructures
12/30/2014US8921980 Aluminum nitride single crystal forming polygonal columns and a process for producing a plate-shaped aluminum nitride single crystal using the same
12/30/2014US8921851 Non-polar plane of wurtzite structure material
12/24/2014CN104233459A 一种升华法制备氮化铝晶体的生长装置 Preparation of an aluminum nitride crystal growth apparatus sublimation
12/24/2014CN104233458A 一种碳化硅晶体生长用的石墨籽晶托 A silicon carbide crystal growth of graphite seed tray
12/23/2014US8916124 Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same
12/18/2014US20140366807 Apparatus for fabricating ingot and method of fabricating ingot
12/17/2014CN204023001U 一种ZnO生长装置 One kind of ZnO growth apparatus
12/17/2014CN104213195A 一种低温pvt控制单晶生长包裹物缺陷的方法 A method of low-temperature crystal growth control pvt inclusions defects
12/16/2014US8912126 Substrate, method of producing substrate, superconducting wire, and method of producing superconducting wire
12/11/2014US20140363607 Silicon carbide single crystal wafer and manufacturing method for same
12/10/2014CN102505144B 一种有机微纳结构定向生长的制备方法 Method for preparing organic growth oriented micro and nano structures
12/09/2014US8906727 Heteroepitaxial growth using ion implantation
12/04/2014US20140353680 Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
12/04/2014US20140352607 Raw Material for Growth of Ingot, Method for Fabricating Raw Material for Growth of Ingot and Method for Fabricating Ingot
12/02/2014US8900362 Manufacturing method of gallium oxide single crystal
11/2014
11/27/2014US20140345517 Method for the formation of nano-scale on-chip optical waveguide structures
11/25/2014US8896100 III nitride structure and method for manufacturing III nitride semiconductor fine columnar crystal
11/25/2014US8896020 Method and apparatus for producing large, single-crystals of aluminum nitride
11/25/2014US8894769 Material evaporation chamber with differential vacuum pumping
11/20/2014US20140342488 Preparation Method of Manufacturing Thermoelectric Nanowires Having Core/Shell Structure
11/20/2014US20140338589 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods
11/18/2014US8888913 Method of manufacturing epitaxial silicon wafer and apparatus therefor
11/18/2014US8887650 Temperature-controlled purge gate valve for chemical vapor deposition chamber
11/13/2014US20140332915 Direct Graphene Growth on Metal Oxides by Molecular Epitaxy
11/13/2014US20140331919 Method for producing ga2o3 crystal film
11/13/2014US20140331917 Silicon carbide powder, method for manufacturing the same and method for growing single crystal
11/04/2014US8878322 Perovskite manganese oxide thin film and manufacturing method therefor
11/04/2014US8876973 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
10/2014
10/30/2014US20140318592 Enhancement of thermoelectric properties through polarization engineering
10/28/2014US8871364 Perovskite manganese oxide thin film
10/28/2014US8871025 SiC single crystals with reduced dislocation density grown by step-wise periodic perturbation technique
10/21/2014US8866367 Thermally oxidized seed layers for the production of {001} textured electrodes and PZT devices and method of making
10/21/2014US8865324 Production method for a bulk SiC single crystal with a large facet and monocrystalline SiC substrate with homogeneous resistance distribution
10/16/2014US20140308590 Solid polymer electrolyte, method of preparing solid polymer electrolyte and electrochemical device
10/14/2014US8859401 Method for growing a nitride-based III-V group compound semiconductor
10/14/2014US8858713 Apparatus for depositing a thin film of material on a substrate and regeneration process for such an apparatus
10/14/2014US8858709 Silicon carbide with low nitrogen content and method for preparation
10/09/2014US20140299048 Method of manufacturing silicon carbide single crystal
10/07/2014US8853829 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
10/07/2014US8852344 Large area deposition in high vacuum with high thickness uniformity
10/07/2014US8852343 Apparatus for crystal growth
10/02/2014WO2014157000A1 Carbon-doped zinc oxide film and method for producing same
10/02/2014US20140295171 Ingot, silicon carbide substrate, and method for producing ingot
10/02/2014US20140291811 Group iii nitride crystal substrate, epilayer-containing group iii nitride crystal substrate, semiconductor device and method of manufacturing the same
10/02/2014US20140291810 Methods for growing iii-v materials on a non iii-v material substrate
10/02/2014US20140291694 Planar nonpolar group-iii nitride films grown on miscut substrates
10/02/2014US20140290580 Apparatus for fabricating ingot
10/02/2014US20140290566 Process of Surface Treatment for Wafer
10/01/2014EP2784191A1 Low carbon group-III nitride crystals
09/2014
09/30/2014US8846506 Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)
09/30/2014US8846504 GaN on Si(100) substrate using epi-twist
09/30/2014US8845992 III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate
09/25/2014US20140287226 Ingot, silicon carbide substrate, and method for producing ingot
09/25/2014US20140283735 Method for growth of ingot
09/18/2014US20140272335 Low-E Glazing Performance by Seed Structure Optimization
09/16/2014US8835983 Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
09/16/2014US8834630 Defect reduction in seeded aluminum nitride crystal growth
09/11/2014US20140251205 Methods and systems for thin film deposition processes
09/09/2014US8829530 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
09/04/2014WO2014072829A3 Nanometer sized structures grown by pulsed laser deposition
09/04/2014US20140245947 Methods of producing large grain or single crystal films
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