Patents for C30B 3 - Unidirectional demixing of eutectoid materials (65)
10/2014
10/28/2014US8871022 Systems and methods for preparation of epitaxially textured thick films
05/2014
05/22/2014DE102012221409A1 Solid body comprises a functionalized surface layer with locally laterally and vertically distributed components of at least one two- and multi-phase systems, which are varying on nanometer- and micrometer scales
05/06/2014US8715412 Laser-irradiated thin films having variable thickness
12/2013
12/24/2013US8613901 Titanium oxide nano tube material and method for manufacturing the same
10/2013
10/15/2013US8557040 Systems and methods for preparation of epitaxially textured thick films
08/2013
08/13/2013US8506703 Method and apparatus for forming colloidal photonic crystals
06/2013
06/11/2013US8460461 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same
05/2013
05/21/2013US8445365 Single scan irradiation for crystallization of thin films
10/2012
10/16/2012US8287643 Clad textured metal substrate for forming epitaxial thin film thereon and method for manufacturing the same
06/2012
06/19/2012US8202364 Method for solid-state single crystal growth
02/2012
02/07/2012US8110285 Self-supported film and silicon wafer obtained by sintering
10/2011
10/13/2011US20110248278 Single scan irradiation for crystallization of thin films
06/2011
06/21/2011US7964480 Single scan irradiation for crystallization of thin films
09/2010
09/28/2010US7803340 irradiating SiOx (X is 0.5 to2.0) particles each including an amorphous silicon particle having a particle diameter of 0.5 to 5 nm with light (laser beam) to produce SiO or SiO2 crsyatalline particles
09/21/2010US7799158 Method for producing crystallographically-oriented ceramic
06/2010
06/15/2010US7736433 BaTiO3—PbTiO3 series single crystal and method of manufacturing the same, piezoelectric type actuator and liquid discharge head using such piezoelectric type actuator
05/2010
05/18/2010US7718000 Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications
09/2009
09/01/2009US7582357 Silicon semiconductor substrate
07/2009
07/07/2009US7557018 Element fabrication substrate
06/2009
06/10/2009CN100497752C Method of solid-phase flux epitaxy growth
03/2009
03/24/2009US7507290 Flux assisted solid phase epitaxy
02/2009
02/12/2009US20090038536 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
11/2008
11/04/2008US7445674 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
07/2008
07/03/2008US20080157095 Semiconductor Devices Having Single Crystalline Silicon Layers
06/2008
06/10/2008US7384476 Method for crystallizing silicon
04/2008
04/29/2008US7364955 Methods of manufacturing semiconductor devices having single crystalline silicon layers
04/01/2008US7351283 System and method for fabricating a crystalline thin structure
02/2008
02/14/2008US20080035863 Single scan irradiation for crystallization of thin films
12/2007
12/25/2007US7311778 Single scan irradiation for crystallization of thin films
11/2007
11/06/2007US7291218 Method of fabricating orientation film for liquid crystal display device
09/2007
09/13/2007US20070209571 Flux Assisted Solid Phase Epitaxy
06/2007
06/07/2007US20070125298 Rhombohedral fluoroberyllium borate crystals and hydrothermal growth thereof for use in laser and non-linear optical applications and devices
06/07/2007US20070125297 Hydrothermal growth of hexagonal beryllium borate crystals for use in laser non-linear optical and birefringent applications and devices
03/2007
03/21/2007CN1934294A Method of solid-phase flux epitaxy growth
03/01/2007US20070044706 Method of forming a crystalline structure and a method of manufacturing a semiconductor device
01/2007
01/25/2007US20070020536 Laser beam pattern mask and crystallization method using the same
01/18/2007US20070015069 mask includes multiple transmissive areas having a plurality of first slits for adjusting energy of the laser illumination passing through the mask; and an opaque area; for laser illumination to convert amorphous silicon into polysilicon
01/11/2007US20070006796 Crystallization apparatus and crystallization method
12/2006
12/28/2006US20060292835 Element fabrication substrate
12/27/2006EP1736570A1 Method of solid-phase flux epitaxy growth
12/21/2006WO2005086962A3 System and method for fabricating a crystalline thin structure
12/14/2006WO2005034193A3 Single scan irradiation for crystallization of thin films
10/2006
10/05/2006US20060219157 Oxide films containing titanium
09/2006
09/21/2006US20060207496 Method of manufacturing domain inverted crystal
08/2006
08/10/2006US20060174818 Method of producing high quality relaxed silicon germanium layers
07/2006
07/18/2006US7077903 Etch selectivity enhancement for tunable etch resistant anti-reflective layer
12/2005
12/15/2005US20050277235 Methods of manufacturing semiconductor devices having single crystalline silicon layers and related semiconductor devices
11/2005
11/17/2005US20050252440 Method of fabricating orientation film for liquid crystal display device
11/02/2005CN1691275A Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/2005
10/27/2005US20050235903 Single scan irradiation for crystallization of thin films
10/06/2005US20050217571 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
09/2005
09/29/2005WO2005090649A1 Method of solid-phase flux epitaxy growth
09/29/2005US20050211157 Process control system for controlling a crystal-growing apparatus
09/22/2005WO2005086962A2 System and method for fabricating a crystalline thin structure
09/15/2005US20050199181 System and method for fabricating a crystalline thin structure
05/2005
05/12/2005US20050098234 Element fabrication substrate
05/12/2005US20050098091 Etch selectivity enhancement for tunable etch resistant anti-reflective layer
04/2005
04/14/2005WO2005034193A2 Single scan irradiation for crystallization of thin films
09/1986
09/23/1986CA1211688A1 Solid state production of multiple single crystal articles
05/1986
05/06/1986CA1204044A1 Growth of structures based on group iv semiconductor materials
10/1984
10/09/1984US4475980 Solid state production of multiple single crystal articles
02/1983
02/08/1983US4372781 Method and apparatus for treating eutectic and eutectoid compositions
08/1982
08/19/1982WO1982002726A1 Growth of structures based on group iv semiconductor materials
09/1981
09/02/1981EP0034995A1 Apparatus and its use for the manufacture and treatment of eutectic and eutectoid composites
01/1976
01/20/1976US3933481 High-temperature eutectoid alloy and process of making