C30B 27 - Single-crystal growth under a protective fluid

Patents for C30B 27 - Single-crystal growth under a protective fluid (584)
06/2011
06/22/2011	EP2336400A2 CdTe single crystal and CdTe polycrystal, and method for producing the same
06/15/2011	CN102094237A Method for growing holmium-doped calcium yttrium aluminate laser crystal
06/15/2011	CN102094236A Czochralski method for growing long-lifetime P-type boron-doped silicon single crystal
05/2011
05/11/2011	CN1936112B Low defect density silicon
05/11/2011	CN102051677A Method for growing graphene on large-diameter 6H-SiC carbon surface
05/11/2011	CN102051676A In-situ grown tantalum carbide whisker material and preparation method thereof
04/2011
04/27/2011	EP1741808B1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD
04/26/2011	CA2452542C Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
04/12/2011	USRE42279 Method of preparing a compound semiconductor crystal
03/2011
03/22/2011	US7909931 Silica glass crucible
03/15/2011	US7906443 Controlling oxygen precipitates in silicon wafers using infrared irradiation and heating
02/2011
02/15/2011	US7887633 Germanium-enriched silicon material for making solar cells
12/2010
12/15/2010	CN101914806A Unidirectional solidification furnace with improved gas path
11/2010
11/30/2010	US7842133 Single crystal growing method
08/2010
08/17/2010	US7776152 Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth
07/2010
07/01/2010	US20100162946 System for continuous growing of monocrystalline silicon
06/2010
06/02/2010	CN101319352B Vertical pulling type single crystal growth furnace
06/01/2010	US7727334 Apparatus for pulling single crystal by CZ method
05/2010
05/26/2010	CN101713095A Silicon crystal growing device with two-way airflow
05/25/2010	US7722718 Methods for crystallizing ERK2 polypeptides
05/04/2010	US7708828 Dust-free and pore-free, high-purity granulated polysilicon
04/2010
04/21/2010	CN101319351B Monocrystalline growing furnace
04/06/2010	US7691199 Melter assembly and method for charging a crystal forming apparatus with molten source material
03/2010
03/24/2010	CN100595351C Interstitial atoms based silicon with low defect density
12/2009
12/22/2009	US7635414 System for continuous growing of monocrystalline silicon
12/09/2009	CN101597788A Method for preparing cast nitrogen-doped monocrystalline silicon through melting polycrystalline silicon under nitrogen
12/09/2009	CN101597787A Method for casting nitrogen-doped monocrystalline silicon with controllable nitrogen concentration under nitrogen
11/2009
11/11/2009	EP2115188A2 Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock
10/2009
10/22/2009	DE19712331B4 Kristall-Ziehanlage Crystal-pulling system
10/21/2009	CN101560693A Method for preparing solar energy level silicon crystals containing doped element
10/07/2009	CN100547122C Vacancy-dominated, defect-free silicon
09/2009
09/24/2009	DE19608375B4 Vorrichtung zum Ziehen von Einkristallen Apparatus for drawing single crystals
09/01/2009	CA2491644C Method for fractional crystallisation of a molten metal
08/2009
08/26/2009	CN101514485A Method and device for preparing silicon crystal with lower oxygen content
07/2009
07/29/2009	EP1500633B1 Production method for compound semiconductor single crystal
07/09/2009	US20090173272 Apparatus for pulling single crystal by CZ method
04/2009
04/15/2009	CN101407936A Method and apparatus for growing semiconductor crystals and crystal product and device support method
04/09/2009	DE102004040053B4 Verfahren zur Herstellung eines Siliciumeinkristalls A process for producing a silicon single
03/2009
03/17/2009	USRE40662 Method of preparing a compound semiconductor crystal
03/04/2009	CN101377019A Novel scintillation crystal material NaY(WO4)2 doped with Ce<3+>
03/04/2009	CN101377018A Novel scintillation crystal material NaLa(WO4)2 doped with Ce<3+>
03/04/2009	CN101377017A Novel scintillation crystal material NaGd(WO4)2 doped with Ce<3+>
01/2009
01/29/2009	US20090025787 Wafer/Ribbon Crystal Method and Apparatus
12/2008
12/18/2008	US20080311021 Apparatus for pulling single crystal by CZ method
12/18/2008	US20080311019 Apparatus for pulling single crystal by CZ method
12/18/2008	US20080308034 Ribbon Crystal Pulling Furnace Afterheater with at Least One Opening
12/16/2008	US7465351 Melter assembly and method for charging a crystal forming apparatus with molten source material
12/10/2008	CN101319352A Vertical pulling type single crystal growth furnace
12/10/2008	CN101319351A Monocrystalline growing furnace
10/2008
10/30/2008	WO2008128378A1 Vertical pulling and zone melting method for producing monocrystalline silicon
10/16/2008	WO2008095111A3 Method and system for forming a higher purity semiconductor ingot using low purity semiconductor feedstock
10/09/2008	WO2008014449A3 Seed holder for crystal growth reactors
10/09/2008	WO2008014446A3 Sintered metal components for crystal growth reactors
10/07/2008	US7431764 Method for pulling up single crystal
10/02/2008	WO2008014434A3 Crystal growth method and reactor design
09/2008
09/10/2008	CN100418246C Doped organic semiconductor materials and process for their preparation
09/09/2008	US7422631 Mould parts of silicon nitride and method for producing such mould parts
08/2008
08/28/2008	US20080203361 Thermal barrier separates crystal growth area from synthesizing melt area of vessel; semiconductors
08/21/2008	WO2008099839A1 Process for producing compound semiconductor single crystal and crystal growing apparatus
08/20/2008	EP1456866A4 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
07/2008
07/24/2008	WO2007136420A3 Apparatus for fabricating large-surface area polycrystalline silicon sheets for solar cell application
07/09/2008	CN100400471C Method for manufacture thermal field charcoal/charcoal draft tube for single crystal silicon pulling furnace
06/2008
06/12/2008	US20080134958 System For Continuous Growing of Monocrystalline Silicon
06/03/2008	CA2476840C Method of attaching an end seal to manufactured seeds
02/2008
02/28/2008	US20080047485 Apparatus for Growing High Quality Silicon Single Crystal Ingot and Growing Method Using the Same
02/12/2008	US7329317 Method for producing silicon wafer
01/2008
01/24/2008	US20080019896 Inp Single Crystal Wafer and Method for Producing Inp Single Crystal
01/01/2008	US7314518 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
12/2007
12/06/2007	US20070277727 Melt surface position monitoring apparatus in silicon single crystal growth process
11/2007
11/21/2007	CN101076618A System for continuous growing of monocrystalline silicon
11/14/2007	CN200974872Y Vertical pulling monocrystalline furnace having shielding gas control device
11/14/2007	CN101070621A Low defect density, self-interstitial dominated silicon
11/08/2007	US20070256628 Silica glass crucible
11/08/2007	US20070256625 Apparatus for pulling single crystal by CZ method
10/2007
10/18/2007	US20070240629 Method for manufacturing a silicon single crystal
10/04/2007	US20070227439 Method for manufacturing defect-free silicon single crystal
09/2007
09/19/2007	CN100338268C Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
08/2007
08/23/2007	US20070193502 Method of producing fine particle-like materials, and fine particle-link materials
08/16/2007	US20070188717 Method for producing crystal elements having strategically oriented faces for enhancing performance
07/2007
07/26/2007	US20070169683 Nitrogen-doped silicon substantially free of oxidation induced stacking faults
07/17/2007	US7244309 Apparatus for pulling single crystal by CZ method
06/2007
06/14/2007	US20070131162 Single crystal growing apparatus
06/12/2007	US7229494 Production method for compound semiconductor single crystal
06/12/2007	US7228658 Method of attaching an end seal to manufactured seeds
06/06/2007	CN1320173C Process for producing single crystal of compound semiconductor and crystal growing apparatus
05/2007
05/30/2007	CN1318662C CdTe single crystal and CdTe polycrystal, and method for preparation thereof
05/18/2007	WO2005084225A3 System for continuous growing of monocrystalline silicon
05/10/2007	US20070101927 Silicon based optical waveguide structures and methods of manufacture
05/10/2007	US20070101926 Method of manufacturing silicon single crystal, silicon single crystal and silicon wafer
05/03/2007	US20070095277 Heat exchange having adsorbing core for use in refrigerating system
05/03/2007	US20070095275 Method for manufacturing silicon single crystal
05/01/2007	US7211142 CdTe single crystal and CdTe polycrystal, and method for preparation thereof
04/2007
04/26/2007	US20070089666 Silicon semiconductor substrate and production method thereof
04/19/2007	US20070084400 Quartz glass crucible and method for treating surface of quartz glass crucible
04/19/2007	US20070084397 Quartz glass crucible and method for treating surface of quartz glass crucible
04/12/2007	US20070079749 Method and apparatus for producing spherical silicon single-crystal
04/05/2007	US20070074654 Evaporation source machine and vaccum deposition apparatus using the same
04/05/2007	US20070074653 Apparatus for preparation of silicon crystals with reduced metal content
03/2007
03/29/2007	US20070068448 Single crystal semiconductor manufacturing apparatus and manufacturing method, and single crystal ingot
03/29/2007	US20070068447 Method of manufacturing silicon wafer

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