Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 27 - Single-crystal growth under a protective fluid
Patents for C30B 27 - Single-crystal growth under a protective fluid (584)
01/2006
01/12/2006US20060005762 Method for producing silicon wafer
01/12/2006US20060005761 Method and apparatus for growing silicon crystal by controlling melt-solid interface shape as a function of axial length
12/2005
12/22/2005US20050279278 Melter assembly and method for charging a crystal forming apparatus with molten source material
12/22/2005US20050279275 Melter assembly and method for charging a crystal forming apparatus with molten source material
12/20/2005US6977010 Apparatus for pulling single crystal by CZ method
12/08/2005US20050268840 Apparatus for pulling single crystal by CZ method
11/2005
11/10/2005WO2005106083A1 InP SINGLE CRYSTAL WAFER AND InP SINGLE CRYSTAL MANUFACTURING METHOD
11/02/2005CN1692185A Process for producing single crystal of compound semiconductor and crystal growing apparatus
10/2005
10/19/2005CN1683606A Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
10/13/2005US20050223971 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
09/2005
09/29/2005US20050211157 Process control system for controlling a crystal-growing apparatus
09/22/2005US20050205000 Low defect density silicon
09/15/2005WO2005084225A2 System for continuous growing of monocrystalline silicon
09/14/2005EP1574602A1 Process for producing single crystal of compound semiconductor and crystal growing apparatus
09/09/2005WO2005083160A1 COMPOUND SEMICONDUCTOR SINGLE CRYSTAL MANUFACTURING METHOD AND ZnTe SINGLE CRYSTAL
08/2005
08/25/2005US20050183660 Method of identifying defect distribution in silicon single crystal ingot
08/04/2005US20050170649 Cdte single crystal and cdte polycrystal, and method for preparation thereof
06/2005
06/08/2005CN1205362C Gas flow control method and its device of thermal field of vertical pulling silicon monocrystal furnace
06/02/2005US20050118739 Production method for compound semiconductor single crystal
06/02/2005US20050115493 Thermal shield
06/01/2005CN1623014A CdTe single crystal and CdTe polycrystal, and method for preparation thereof
05/2005
05/24/2005US6896729 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
05/05/2005US20050092236 System for continuous growing of monocrystalline silicon
04/2005
04/28/2005US20050087126 Non-contact orbit control system for Czochralski crystal growth
04/14/2005US20050076826 Silicon seed crystal and method for manufacturing silicon single crystal
03/2005
03/31/2005US20050066881 Continuous production method for crystalline silicon and production apparatus for the same
03/24/2005US20050061232 Doped organic semiconductor materials and process for their preparation
03/24/2005DE10338406A1 Dotierte organische Halbleitermaterialien sowie Verfahren zu deren Herstellung Doped organic semiconductor materials as well as processes for their preparation
03/17/2005DE102004040053A1 Production of a silicon single crystal comprises drawing a single crystal using the Czochralski method and a silicon seed crystal which has no empty site excess region on a contact surface between the crystal and a starting material
03/09/2005CN1591926A Doped organic semiconductor materials and process for their preparation
03/03/2005US20050045089 Method of attaching an end seal to manufactured seeds
02/2005
02/23/2005EP1508903A2 Endowed organic semiconductor materials and method of prepration
02/23/2005EP1508632A1 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF
02/23/2005CN1190529C Method for growing nitrogen-concentration controllable micro mitrogen silicon single crystal under nitrogen atmosphere
02/23/2005CN1190528C Method for growing silicon single crystal
02/23/2005CN1190527C Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping
02/18/2005CA2476168A1 Doped organic semiconductor materials and process for their preparation
01/2005
01/26/2005EP1500633A1 Production method for compound semiconductor single crystal
01/06/2005US20050000403 Process for producing single crystal of compound semiconductor and crystal growing apparatus
12/2004
12/14/2004US6830740 Method for producing solar cell and solar cell
11/2004
11/03/2004CN1543518A Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
09/2004
09/15/2004EP1456866A2 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
07/2004
07/01/2004WO2004055249A1 Process for producing single crystal of compound semiconductor and crystal growing apparatus
06/2004
06/17/2004WO2003005417A3 Method and apparatus for growing semiconductor crystals with a rigid support
06/16/2004EP1428912A2 Method of preparing a compound semiconductor crystal doped with carbon
05/2004
05/13/2004US20040089224 Process for producing low defect density silicon
05/11/2004US6733585 Apparatus for pulling single crystal by CZ method
04/2004
04/15/2004US20040070012 Low defect density silicon
03/2004
03/10/2004CN1480567A Method and apppts. for controlling oxygen content of reblended antimony or arsenic in silica chip
10/2003
10/28/2003US6638357 Method for revealing agglomerated intrinsic point defects in semiconductor crystals
10/14/2003US6632278 Low defect density epitaxial wafer and a process for the preparation thereof
09/2003
09/25/2003WO2003078703A1 CdTe SINGLE CRYSTAL AND CdTe POLYCRYSTAL, AND METHOD FOR PREPARATION THEREOF
09/25/2003US20030177976 Method for manufacturing solar cell and solar cell
08/2003
08/21/2003WO2003068696A1 Production method for compound semiconductor single crystal
08/21/2003US20030154907 Apparatus for pulling single crystal by CZ method
08/12/2003US6605150 Low defect density regions of self-interstitial dominated silicon
07/2003
07/24/2003WO2003060202A1 Single crystal growth system and single crystal growth method
06/2003
06/11/2003CN1422991A Method for growing nitrogen-concentration controllable micro nitrogen silicon single crystal under nitrogen atmosphere
06/11/2003CN1422990A Method for growing silicon single crystal
06/11/2003CN1422989A Method for growing micro nitrogen silicon single crystal from polysilicon melting and nitrogen-doping
05/2003
05/21/2003EP1313150A1 Method for manufacturing solar cell and solar cell
04/2003
04/24/2003US20030075101 Protein crystallization in microfluidic structures
04/23/2003CN1412353A Gas flow control method of thermal field of vertical pulling silicon monocrystal furnace and its device
03/2003
03/05/2003EP1288342A2 Method of preparing group III-V compound semiconductor crystal
02/2003
02/27/2003US20030037721 Method and apparatus for growing semiconductor crystals with a rigid support with carbon doping and resistivity control and thermal gradient control
02/26/2003EP1285106A2 Protein crystallization in microfluidic structures
01/2003
01/22/2003CN1099476C Process and apparatus for controlling oxygen content in silicon wafers heavily doped with antimony or arsenic
01/16/2003WO2003005417A2 Method and apparatus for growing semiconductor crystals with a rigid support
01/08/2003EP1273684A2 Low defect density, vacancy dominated silicon
11/2002
11/26/2002US6485563 Sealing carbon dioxide gas (carbon souce for doping) of prefered partial pressure and gallium arsenide semiconductor material in gas impervious airtight vessel, melting the material, cooling to solidify and grow carbon doped crystals
11/21/2002US20020170485 Low defect density epitaxial wafer and a process for the preparation thereof
10/2002
10/10/2002US20020144641 Apparatus for pulling single crystal by CZ method
10/03/2002US20020139294 Low defect density regions of self-interstitial dominated silicon
09/2002
09/04/2002EP0973964B1 Low defect density, self-interstitial dominated silicon
07/2002
07/18/2002WO2002015284A8 Method for manufacturing solar cell and solar cell
06/2002
06/25/2002US6409832 Protein crystallization in microfluidic structures
06/25/2002US6409827 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
06/25/2002US6409826 Low defect density, self-interstitial dominated silicon
06/19/2002EP0973963B1 Low defect density silicon
05/2002
05/29/2002EP1209259A2 Low defect density, self-interstitial dominated silicon
05/29/2002EP1209258A2 Low defect density silicon
02/2002
02/28/2002WO2001075415A3 Protein crystallization in microfluidic structures
02/21/2002WO2002015284A1 Method for manufacturing solar cell and solar cell
01/2002
01/24/2002US20020007779 Low defect density, self-interstitial dominated silicon
10/2001
10/11/2001WO2001075415A2 Protein crystallization in microfluidic structures
10/11/2001US20010027745 Protein crystallization in microfluidic structures
10/11/2001CA2404008A1 Protein crystallization in microfluidic structures
10/04/2001US20010025597 Low defect density, self-interstitial dominated silicon
10/04/2001EP0972094B1 Low defect density, vacancy dominated silicon
09/2001
09/13/2001US20010020437 Low defect density silicon and a process for producing low defect density silicon wherein V/G0 is controlled by controlling heat transfer at the melt/solid interface
09/11/2001US6287380 Low defect density silicon
09/05/2001CN1311356A Method and equipment for producing single crystal of oxides
08/2001
08/14/2001US6273947 Method of preparing a compound semiconductor crystal
07/2001
07/25/2001EP1118697A2 Low defect density, vacancy dominated silicon
07/05/2001US20010006040 Method of preparing a compound semiconductor crystal
07/03/2001US6254672 Low defect density self-interstitial dominated silicon
04/2001
04/10/2001US6214109 Apparatus for controlling the oxygen content in silicon wafers heavily doped with antimony or arsenic
03/2001
03/21/2001EP0931184B1 Process for actively controlling defects during gaas crystal growth
08/2000
08/02/2000CN1261928A Low defect density silicon
06/2000
06/21/2000CN1257556A Low defect density ideal oxygen precipitating silicon
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