| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/05/2015 | WO2015031794A2 Reactor vessels for ammonothermal and flux-based growth of group-iii nitride crystals |
| 03/05/2015 | WO2015030408A1 Device for shielding heat, device for growing ingot comprising same, and method for growing ingot using same |
| 03/05/2015 | WO2015030038A1 Foam-jetting member for protein crystal device and protein crystal-adsorbing foam-jetting member, protein crystal device and method for crystallizing protein, and protein crystal cutting device and method for cutting protein crystal |
| 03/05/2015 | WO2015029649A1 N-TYPE SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SAME |
| 03/05/2015 | WO2015029569A1 Artificial crystal growth method |
| 03/05/2015 | WO2015028225A1 Method and device for treating the free surface of a material |
| 03/05/2015 | WO2015027880A1 Photonic crystal microsphere |
| 03/05/2015 | US20150064915 Methods for providing spaced lithography features on a substrate by self-assembly of block copolymers |
| 03/05/2015 | US20150064496 Single crystal copper, manufacturing method thereof and substrate comprising the same |
| 03/05/2015 | US20150064440 Production method of zeolite film in which one axis is completely vertically oriented, using steam under synthetic gel-free condition |
| 03/05/2015 | US20150064098 Process for producing two-dimensional nanomaterials |
| 03/05/2015 | US20150059818 METHOD OF PRODUCING FILM OF SURFACE Nb-CONTAINING La-STO CUBIC CRYSTAL PARTICLES |
| 03/05/2015 | US20150059647 Apparatus for Growing Diamonds by Microwave Plasma Chemical Vapour Deposition Process and Substrate Stage Used Therein |
| 03/05/2015 | US20150059641 Bulk diffusion crystal growth process |
| 03/05/2015 | US20150059640 Method for reducing growth of non-uniformities and autodoping during column iii-v growth into dielectric windows |
| 03/05/2015 | DE102009015236B4 Tiegel und seine Verwendung Crucible and its use |
| 03/04/2015 | EP2843089A1 SiC SINGLE CRYSTAL SUBSTRATE |
| 03/04/2015 | EP2843088A1 Metal fluoride crystal, light emitting element, scintillator, method for detecting neutrons, and method for producing metal fluoride crystal |
| 03/04/2015 | EP2843026A1 Phosphor, method for manufacturing same, and light-emitting device |
| 03/04/2015 | EP2841796A1 Methods for applying graphene coatings and substrates with such coatings |
| 03/04/2015 | EP2841630A1 METHOD AND APPARATUS FOR GROWING INDIUM OXIDE (In203) SINGLE CRYSTALS AND INDIUM OXIDE (In203) SINGLE CRYSTAL |
| 03/03/2015 | US8969824 CsLiLn Halide scintillator |
| 03/03/2015 | US8969803 Room temperature aluminum antimonide radiation detector and methods thereof |
| 03/03/2015 | US8968643 Ni-based single crystal super alloy |
| 03/03/2015 | US8968471 Apparatus for manufacturing silicon substrate for solar cell using continuous casting and having contacting solidification and stress relieving regions |
| 03/03/2015 | US8968469 Semiconductor device and method of manufacture thereof |
| 03/03/2015 | US8968467 Method and system for controlling resistivity in ingots made of compensated feedstock silicon |
| 02/26/2015 | WO2015025931A1 Method for producing nitride of group-13 element, and melt composition |
| 02/26/2015 | WO2015025463A1 Method for producing silicon single crystal material, and silicon single crystal material |
| 02/26/2015 | WO2015025448A1 Silicon wafer heat treatment method |
| 02/26/2015 | WO2015024789A1 Polycrystalline silicon fragments and process for comminuting polycrystalline silicon rods |
| 02/26/2015 | WO2015024762A1 Substrate treatment device |
| 02/26/2015 | US20150056123 Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer |
| 02/26/2015 | US20150054134 Silicon wafer and manufacturing method thereof |
| 02/26/2015 | US20150053996 Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-iii nitride single crystal layer |
| 02/26/2015 | DE112010001116B4 Verfahren zum Herstellen eines SiC-Einkristalls A method for producing an SiC single crystal |
| 02/25/2015 | EP2839055A1 Vapor deposition apparatus and method associated |
| 02/24/2015 | US8963166 III nitride crystal substrate and light-emitting device |
| 02/24/2015 | US8962458 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates |
| 02/24/2015 | US8962456 Group III nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device |
| 02/24/2015 | US8962453 Single crystal growth on a mis-matched substrate |
| 02/24/2015 | US8962365 Method of manufacturing GaN-based film and composite substrate used therefor |
| 02/24/2015 | US8962137 Branched nanowire and method for fabrication of the same |
| 02/24/2015 | US8961828 Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals |
| 02/24/2015 | US8961686 Method of manufacturing monocrystal, flow straightening cylinder, and monocrystal pulling-up device |
| 02/24/2015 | US8961685 Method of manufacturing silicon single crystal, silicon single crystal, and wafer |
| 02/19/2015 | WO2015023709A2 Silicon wafers with p-n junctions by epitaxial deposition and devices fabricated therefrom |
| 02/19/2015 | WO2015021920A1 Preparation method for high-strength cross-linked polymer photonic crystal film |
| 02/19/2015 | US20150050471 Method for producing iii-n templates and the reprocessing thereof and iii-n template |
| 02/19/2015 | US20150049788 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor |
| 02/19/2015 | US20150047554 Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon |
| 02/18/2015 | EP2837715A1 Apatite crystal |
| 02/18/2015 | EP2837714A1 Method for producing a textured layer of spinel iron oxide |
| 02/18/2015 | EP2837020A1 Sic substrate with sic epitaxial film |
| 02/18/2015 | EP2836628A2 Multi-doped lutetium based oxyorthosilicate scintillators having improved photonic properties |
| 02/17/2015 | US8957433 Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element |
| 02/17/2015 | US8956952 Multilayer substrate structure and method of manufacturing the same |
| 02/17/2015 | US8956453 Method for producing a crystalline germanium layer on a substrate |
| 02/12/2015 | WO2015020226A1 Method and apparatus for manufacturing group 13 nitride crystal |
| 02/12/2015 | WO2015020225A1 Apparatus and method for manufacturing group 13 nitride crystal |
| 02/12/2015 | WO2015020161A1 SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| 02/12/2015 | WO2015018260A1 Epitaxial structure of iii-group nitride and growth method therefor |
| 02/12/2015 | US20150045885 Seedless group iv nanowires, and methods for the production thereof |
| 02/12/2015 | US20150045206 Zeolite nanosheet membrane |
| 02/12/2015 | US20150044467 Method of growing ingot and ingot |
| 02/12/2015 | US20150044447 Cleaving thin layer from bulk material and apparatus including cleaved thin layer |
| 02/12/2015 | US20150044422 Silicon wafer and method for manufacturing the same |
| 02/12/2015 | US20150042445 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor |
| 02/12/2015 | US20150040979 Silicon Wafers with p-n Junctions by Epitaxial Deposition and Devices Fabricated Therefrom |
| 02/12/2015 | US20150040822 Method and apparatus for precleaning a substrate surface prior to epitaxial growth |
| 02/12/2015 | US20150040821 Method for purification of silicon |
| 02/12/2015 | US20150040820 Method for manufacturing single-crystal silicon |
| 02/12/2015 | US20150040818 Method for achieving sustained anisotropic crystal growth on the surface of a melt |
| 02/12/2015 | DE102014111372A1 Iridium-spitze, gasfeld-ionenquelle, einrichtung eines fokussierten ionenstrahls, elektronenquelle, elektronenmikroskop, einrichtung zur analyse unter anwendung eines elektronenstrahls, ionen-elektronen- mehrfachstrahl-einrichtung, abtastsondenmikroskop und masken- reparatureinrichtung Iridium-top, gas field-ion source, a focused ion beam device, electron source, electron microscope, device for analysis under an electron beam, ion-electron multiple-jet device, scanning probe and mask-repair facility |
| 02/11/2015 | EP2835632A1 Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon |
| 02/11/2015 | EP2835454A1 Seedless group IV nanowires, and methods for the production thereof |
| 02/11/2015 | EP2835452A1 Silica vessel for pulling up single crystal silicon and process for producing same |
| 02/11/2015 | EP2834860A1 Reproducible step-edge josephson junction |
| 02/11/2015 | CN204151465U 旋转微调装置 Rotary trimming device |
| 02/11/2015 | CN204151464U 一种坩埚吊装夹具 One kind of crucible lifting clamps |
| 02/11/2015 | CN204151463U 蓝宝石单晶炉结构 Sapphire crystal furnace structure |
| 02/11/2015 | CN204151462U 蓝宝石单晶炉旋转机构 Sapphire crystal furnace rotation mechanism |
| 02/11/2015 | CN204151461U 晶体称重装置 Crystal weighing device |
| 02/11/2015 | CN204151460U 一种用于定向生长蓝宝石单晶的石墨加热器 A directional growth sapphire single crystal graphite heaters for |
| 02/11/2015 | CN204151459U 一种保温铸锭炉 Insulating ingot furnace |
| 02/11/2015 | CN204151458U 一种多晶铸锭炉 A polycrystalline ingot furnace |
| 02/11/2015 | CN204151457U 一种多晶硅用石英陶瓷坩埚 One kind of polycrystalline quartz ceramic crucible |
| 02/11/2015 | CN204151455U 可获得绝对位置信息的籽晶杆升降机构 Obtained seed bar lifting mechanism absolute position information |
| 02/11/2015 | CN204151454U 蓝宝石单晶炉伸缩籽晶杆 Sapphire crystal furnace telescopic seed rod |
| 02/11/2015 | CN204151452U 一种单晶炉的停炉冷却装置 Single crystal furnace shutdown cooling device |
| 02/11/2015 | CN204151451U 一种单晶炉二次增料装置 Single crystal growth furnace secondary feeding device |
| 02/11/2015 | CN204151450U 一种新型过滤器 A new filter |
| 02/11/2015 | CN204151449U 一种单晶炉循环水换热系统 Single crystal furnace circulating water heat exchanger system |
| 02/11/2015 | CN104350623A 重现性较强的阶梯约瑟夫森触点 Reproducibility strong ladder Josephson contacts |
| 02/11/2015 | CN104350187A 制造碳化硅基板的方法 The method of producing a silicon carbide substrate |
| 02/11/2015 | CN104350186A SiC单晶锭、SiC单晶以及制造方法 SiC single crystal ingot, SiC single crystal and a method for producing |
| 02/11/2015 | CN104347761A 晶体质量可控的氮化镓薄膜外延生长方法 Controllable crystal quality GaN epitaxial thin film growth method |
| 02/11/2015 | CN104347395A 硅晶片及其制造方法 Silicon wafer and manufacturing method thereof |
| 02/11/2015 | CN104342759A 一种紫铜水冷盘及其制造工艺 One kind of water-cooled copper plate and its manufacturing process |
| 02/11/2015 | CN104342756A 一种优质大尺寸钛宝石晶体生长装置 A high-quality large-size titanium sapphire crystal growing apparatus |