C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape

Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/1976
06/01/1976	US3960618 Epitaxial growth process for compound semiconductor crystals in liquid phase
05/1976
05/25/1976	US3959453 Lead dioxide
05/25/1976	US3959006 Neodymium)-(calcium, strontium or magnesium)-(zirconium or tin)-oxygen
04/1976
04/13/1976	US3950596 Altering the appearance of corundum crystals
03/1976
03/23/1976	US3945864 Method of growing thick expitaxial layers of silicon
03/09/1976	US3943218 Method of manufacturing shaped hollow bodies
02/1976
02/03/1976	US3936321 Method of making a compound semiconductor layer of high resistivity