Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 1 - Single-crystal growth directly from the solid state
Patents for C30B 1 - Single-crystal growth directly from the solid state (1,958)
01/2006
01/12/2006US20060006321 Optoelectronic component
01/12/2006US20060006320 Optoelectronic component
01/12/2006US20060006313 Optoelectronic component
01/05/2006US20060003555 Strained silicon-on-insulator by anodization of a buried p+ silicon germanium layer
01/05/2006US20060003554 Structure and method for manufacturing planar soi substrate with multiple orientations
01/04/2006CN1716537A Method of forming polysilicon layer in semiconductor device
01/03/2006US6982208 Method for producing high throughput strained-Si channel MOSFETS
01/03/2006US6982001 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
12/2005
12/29/2005WO2005124838A1 Low temperature epitaxial growth of silicon-containing films using uv radiation
12/29/2005US20050287822 Method of forming polysilicon layer in semiconductor device
12/29/2005US20050285139 Strained Si/SiGe structures by ion implantation
12/22/2005WO2005029551A3 Processes and systems for laser crystallization processing of film regions on a substrate utilizing a line-type beam, and structures of such film regions
12/22/2005US20050282408 Method for crystallizing semiconductor with laser beams
12/22/2005US20050280118 Methods of manufacturing metal-silicide features
12/22/2005DE102005009974A1 Transistor mit flachem Germaniumimplantationsbereich im Kanal Transistor with shallow germanium implantation region in the channel
12/20/2005US6977775 Method and apparatus for crystallizing semiconductor with laser beams
12/15/2005US20050277272 Low temperature epitaxial growth of silicon-containing films using UV radiation
12/15/2005US20050277271 RAISED STI PROCESS FOR MULTIPLE GATE OX AND SIDEWALL PROTECTION ON STRAINED Si/SGOI STRUCTURE WITH ELEVATED SOURCE/DRAIN
12/15/2005US20050277260 Mixed orientation and mixed material semiconductor-on-insulator wafer
12/15/2005US20050277235 Methods of manufacturing semiconductor devices having single crystalline silicon layers and related semiconductor devices
12/15/2005US20050277233 Semiconductor device and method of manufacturing the same
12/15/2005US20050275105 Ultraviolet blocking layer
12/14/2005CN1707754A Method for forming polycrystalline Si and MOSFET device in Si-based material
12/13/2005US6974732 Semiconductor device method of manufacturing
12/08/2005WO2005116304A2 In situ doped epitaxial films
12/08/2005US20050272274 Apparatus for forming a semiconductor thin film
12/08/2005US20050272185 Method of fabricating a semiconductor thin film and semiconductor thin film fabrication apparatus
12/08/2005US20050272159 Device and method for pressure-driven plug transport and reaction
12/08/2005US20050269572 Thin film transistor device and method of manufacturing the same
12/08/2005US20050269300 Laser thin film poly-silicon annealing optical system
12/07/2005CN1705118A Ultraviolet blocking layer
12/01/2005US20050264824 Method for crystallizing semiconductor with laser beams
12/01/2005US20050263064 Dehydroxylation and purification of calcium fluoride materials using a halogen containing plasma
11/2005
11/30/2005EP1600043A2 Analytical furnace with predictive temperature control
11/30/2005CN1703786A Piezoelectric ceramic crystal-oriented under electric field and method of manufacturing the same
11/30/2005CN1229527C Preparation method of barium sodium niobate cylindrical monocrystal particle
11/24/2005WO2005068680A3 Melting and vaporizing apparatus and method
11/24/2005US20050260833 Constant emissivity deposition member
11/24/2005US20050260832 Polycrystalline SiGe junctions for advanced devices
11/24/2005US20050260830 Methods of fabricating a semiconductor device using a dilute aqueous solution of an ammonia and peroxide mixture
11/24/2005US20050259709 Systems and methods for implementing an interaction between a laser shaped as a line beam and a film deposited on a substrate
11/22/2005US6967346 Light emitting diode structure and manufacture method thereof
11/17/2005US20050255621 Thin film transistor device and method of manufacturing the same
11/17/2005US20050252440 Method of fabricating orientation film for liquid crystal display device
11/10/2005US20050250298 In situ doped epitaxial films
11/10/2005US20050250264 Thin film transistor device and method of manufacturing the same
11/08/2005US6962861 Method of forming a polysilicon layer comprising microcrystalline grains
11/03/2005US20050245058 Method for producing high throughput strained-si channel mosfets
11/03/2005DE102005013787A1 Arsen-Dotiermittel für das Ziehen von Siliziumeinzelkristallen, Verfahren für deren Erzeugung und Verfahren zur Erzeugung eines Siliziumeinzelkristalls unter deren Verwendung Arsenic dopant for pulling silicon single crystals, methods for their production and process for producing a silicon single crystal using them
11/02/2005CN1692184A Solid phase single crystal growing method
11/02/2005CN1691275A Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/2005
10/27/2005US20050239672 Non-ionic surfactant, an alkaline compound and pure water; reduces damage to silicon germanium, removes impurities and improves rough surfaces
10/27/2005US20050239271 Heteroepitaxial growth method for gallium nitride
10/27/2005US20050235903 Single scan irradiation for crystallization of thin films
10/20/2005US20050233556 Method for crystallizing semiconductor with laser beams
10/20/2005US20050233555 Adhesion improvement for low k dielectrics to conductive materials
10/20/2005US20050233551 Method for depositing silicon by pulsed cathodic vacuum arc
10/20/2005US20050229839 High throughput screening of crystallization of materials
10/20/2005US20050229838 Aircraft secondary electric load controlling system
10/19/2005CN1683606A Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
10/19/2005CN1683605A Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
10/19/2005CN1683603A Process and its device for preparing fibrous zinc oxide whisker
10/13/2005US20050227504 Method for crystallizing semiconductor with laser beams
10/13/2005US20050227460 Method and apparatus for crystallizing semiconductor with laser beams
10/13/2005US20050227458 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device
10/13/2005US20050227457 Method of forming silicon-based thin film, silicon-based thin film, and photovoltaic element
10/13/2005US20050225771 Method and apparatus for crystallizing semiconductor with laser beams
10/13/2005US20050223971 Furnace for growing compound semiconductor single crystal and method of growing the same by using the furnace
10/13/2005US20050223970 Crystallization apparatus, crystallization method, device and phase modulation element
10/13/2005US20050223967 Powder metallurgy crucible for aluminum nitride crystal growth
10/06/2005US20050221592 Method of growing III-V compound semiconductor layer, substrate product, and semiconductor device
10/06/2005US20050221591 Method of forming high-quality relaxed SiGe alloy layers on bulk Si substrates
10/06/2005US20050218317 Optoelectronic component
10/06/2005US20050217571 Crystallization apparatus, crystallization method, device, optical modulation element, and display apparatus
10/06/2005US20050217570 Apparatus and method for producing single crystal
10/06/2005US20050217567 Covering assembly for crucible used for evaporation of raw materials
10/06/2005US20050217563 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
10/06/2005US20050217560 Semiconductor wafers with non-standard crystal orientations and methods of manufacturing the same
10/05/2005CN1676682A Method for producing magnesia whisker using magnesite
10/05/2005CN1676681A Method for preparing high length-diameter ratio magnesia whisker
10/05/2005CN1222015C Manufacture of thin film transistor
09/2005
09/29/2005WO2005090651A1 Iron oxide whisker of high aspect ratio, titanium oxide whisker of high aspect ratio, structure containing these and process for producing them
09/29/2005US20050215066 High density plasma process for the formation of silicon dioxide on silicon carbide substrates
09/29/2005US20050215057 Arsenic dopants for pulling of silicon single crystal, process for producing thereof and process for producing silicon single crystal using thereof
09/29/2005US20050214991 Method and apparatus for producing semiconductor device
09/29/2005US20050211157 Process control system for controlling a crystal-growing apparatus
09/29/2005US20050211156 Method for manufacturing silicon carbide single crystal from dislocation control seed crystal
09/28/2005CN1674300A Transistor with shallow germanium implantation region in channel
09/22/2005WO2005086962A2 System and method for fabricating a crystalline thin structure
09/22/2005US20050208780 High-quality SGOI by oxidation near the alloy melting temperature
09/22/2005US20050206276 Piezoelectric ceramic crystal-oriented under electric field and method of manufacturing the same
09/22/2005US20050205858 Transistor with shallow germanium implantation region in channel
09/22/2005US20050205771 Optoelectronic component
09/22/2005US20050205005 Microfluidic protein crystallography
09/21/2005EP1576674A2 Methods of forming semiconductor mesa structures including self-aligned contact layers and related devices
09/21/2005EP1576659A1 Method of fabrication of a support structure for a semiconductor device
09/20/2005US6946372 Method of manufacturing gallium nitride based semiconductor light emitting device
09/20/2005US6946367 Methods for forming a semiconductor thin film
09/15/2005WO2005084225A2 System for continuous growing of monocrystalline silicon
09/15/2005US20050202653 High density plasma process for silicon thin films
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