Patents for C30B 1 - Single-crystal growth directly from the solid state (1,958)
10/2003
10/30/2003WO2003089698A1 Single crystal material having high density dislocations arranged one-dimensionally in straight line form, functional device using said single crystal material, and method for their preparation
10/29/2003CN1126154C Method of manufacturing active array display device
10/23/2003US20030196590 Crystal-structure-processed mechanical devices and methods and systems for making
10/08/2003CN1447418A Mfg. method of semiconductor device
10/02/2003WO2003080903A1 LUMINOUS MATERIAL FOR SCINTILLATOR COMPRISING SINGLE CRYSTAL OF Yb MIXED CRYSTAL OXIDE
09/2003
09/30/2003US6626995 Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof
09/25/2003US20030177975 Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material
09/23/2003US6624009 Forming a crystalline semiconductor film on a glass substrate
09/18/2003US20030172866 Method for recrystallizing an amorphized silicon germanium film overlying silicon
09/16/2003US6620710 Forming a single crystal semiconductor film on a non-crystalline surface
09/10/2003CN1441463A Forming method for semiconductor thin film and forming device for semiconductor thin film
09/10/2003CN1440848A Prepn process of TbDyFe-base directionally solidified alloy crystal
08/2003
08/28/2003US20030162332 Method and apparatus for forming a semiconductor thin film
08/21/2003WO2003035915A8 Method for producing monocrystalline metallic wire
08/14/2003US20030151049 Thin film transistor device and method of manufacturing the same
08/12/2003US6605321 Method of treating materials by irradiation
08/07/2003WO2003064021A1 Improved pressure vessel
07/2003
07/31/2003US20030140845 Pressure vessel
07/23/2003CN1432191A Mfg. method of monocrystal silicon (SOI) on insulator
07/23/2003CN1115715C Method of processing semiconductor film and semiconductor device produced by such method
07/15/2003US6593215 Method of manufacturing crystalline semiconductor material and method of manufacturing semiconductor device
07/10/2003US20030129501 Exposure photosensitive media to optics intensity pattern; heating; controlling temperature; prevention variations in refractive index
07/09/2003EP1240366B1 Chemical vapor deposition reactor and process chamber for said reactor
07/08/2003US6590228 LCD device with optimized channel characteristics
06/2003
06/25/2003EP1320637A2 Forming a single crystal semiconductor film on a non-crystalline surface
05/2003
05/28/2003EP1314801A1 Process and apparatus for growing thread-like crystals
05/07/2003CN1107747C High-pressure sinter process for synthosizing large-size polymer crystal
05/06/2003CA2263352C Single crystal sic and a method of producing the same
05/01/2003WO2003035915A1 Method for producing monocrystalline metallic wire
04/2003
04/09/2003CN1408904A Process for producing high purity magnesium oxide monocrystal using waste magnesite ore
04/01/2003US6541795 Thin film semiconductor device and production method for the same
03/2003
03/20/2003US20030054663 Synthesis of layers, coatings or films using collection layer
03/19/2003EP1137826B1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same
03/18/2003US6534207 Irradiating pulsed light to an amorphous base material such as glass to form the crystalline region having a nonlinear characteristic in an irradiated portion of the amorphous material
02/2003
02/25/2003US6524879 Method for producing a thermoelectric semiconductor
02/25/2003US6524662 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
02/20/2003WO2003014428A2 Method of obtaining a cdte or cdznte single crystal and the single crystal thus obtained
02/19/2003CN2536603Y Vacuum inductive crystal growing furnaces with double heating zones
02/13/2003US20030032267 Method for forming crystalline semiconductor film and apparatus for forming the same
02/06/2003WO2003010369A1 Oxide high-critical temperature superconductor acicular crystal and its production method
02/06/2003US20030025119 LCD device with optimized channel characteristics
01/2003
01/30/2003WO2003008676A1 Method for preparing tungstate single crystal
01/23/2003US20030017659 Polysilicon film forming method
01/23/2003US20030015133 Method for annealing a semiconductor
01/21/2003US6509212 Method for laser-processing semiconductor device
01/16/2003US20030013279 Method for crystallizing amorphous film and method for fabricating LCD by using the same
01/16/2003US20030013237 Method for crystallizing amorphous film and method for fabricating LCD by using the same
01/16/2003US20030010982 Semiconductor device and fabricating method thereof
01/08/2003CN1389905A Semiconducting film, semiconductor device and their production methods
01/03/2003WO2003000605A1 Method for producing single crystal of composite oxide
01/03/2003WO2002022919A3 Forming a single crystal semiconductor film on a non-crystalline surface
01/02/2003US20030000455 System and method for regulating lateral growth in laser irradiated silicon films
01/01/2003CN1388564A Method for making amorphous silicon crystalize using mask
12/2002
12/26/2002US20020197829 Method of manufacturing polycrystalline film and semiconductor device
12/19/2002US20020189533 Superconductor incorporating therein superconductivity epitaxial thin film and manufacturing method thereof
12/17/2002US6495405 Method of optimizing channel characteristics using laterally-crystallized ELA poly-Si films
12/17/2002US6494162 Method for annealing a semiconductor
12/12/2002US20020185669 Epitaxial ferroelectric thin-film device and method of manufacturing the same
12/05/2002US20020182828 Semiconductor film, semiconductor device and method of their production
12/05/2002US20020179004 Silicon crystallization method
12/05/2002US20020179001 Method of crystallizing amorphous silicon using a mask
12/05/2002US20020179000 Method for single crystal growth of perovskite oxides
11/2002
11/20/2002CN1094652C Method of manufacturing semiconductor device with crystallizing semiconductor film
11/05/2002US6475942 Conversion of polycrystalline alumina to single crystal sapphire using molybdenum doping
10/2002
10/31/2002US20020158224 Single-crystallized by heating barium titinate-lead titinate compact powder member or sintered member having a smaller lead-containing mol number than barium containing mol number, while keeping powder in non-melting condition
10/22/2002US6468841 Process for producing crystalline silicon thin film
10/10/2002US20020145231 High throughput screening of crystallization of materials
10/01/2002US6458207 Silicon carbide single-crystals
10/01/2002US6458199 Crystallization apparatus and method using non-vacuum process
09/2002
09/26/2002US20020137310 Method and apparatus for fabricating a semiconductor device
09/19/2002US20020130610 Crystals comprising single-walled carbon nanotubes
09/18/2002EP1240366A2 Chemical vapor deposition reactor and process chamber for said reactor
09/17/2002US6451637 Method of forming a polycrystalline silicon film
09/11/2002EP1060300B1 Abo3 perovskite with a step
09/10/2002US6447714 Method for forming biaxially textured articles by powder metallurgy
09/04/2002EP0964943B1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE1+xBa2-xCu3O7-delta
08/2002
08/29/2002US20020119609 Thin film semiconductor device, polycrystalline semiconductor thin film production process and production apparatus
08/22/2002WO2002064863A1 Method of forming single crystals of a ceramic, semiconductive or magnetic material
08/13/2002US6432756 Semiconductor device and fabricating method thereof
08/12/2002CA2335260A1 Method of forming single crystals of a ceramic, semiconductive or magnetic material
08/07/2002CN1362546A Lithium niobate crystal chip with near stoichiometric ratio and its prepn process
08/01/2002US20020102824 Method of optimizing channel characteristics using laterally-crystallized ELA poly-si films
08/01/2002US20020102821 Mask pattern design to improve quality uniformity in lateral laser crystallized poly-Si films
08/01/2002US20020102820 Method of treating semiconductor film and method of fabricating semiconductor device
08/01/2002US20020102764 Process for producing a photoelectric conversion device
08/01/2002US20020100409 Method of crystallizing amorphous silicon layer and crystallizing apparatus thereof
07/2002
07/31/2002EP1227516A2 Thin film semiconductor device, production process and production apparatus
07/31/2002CN1361551A Method for producing semi-conductor device
07/25/2002US20020098695 Method of manufaturing crystalline semiconductor material and method of manufaturing semiconductor device
07/25/2002US20020098297 Amorphous silicon layer is crystallized by using electric fields and plasma
07/23/2002CA2263339C Single crystal sic and process for preparing the same
07/09/2002US6417031 Method of manufacturing a semiconductor device
06/2002
06/12/2002CN1353084A Manufacturing method and application of single wall carbon nano tube
06/05/2002EP0686711B1 Method for manufacturing a magneto-optical device
05/2002
05/23/2002WO2001046498A3 Chemical vapor deposition reactor and process chamber for said reactor
05/16/2002WO2002038496A1 Crystals comprising single-walled carbon nanotubes
05/16/2002US20020058399 Semiconductor thin film and method of fabricating semiconductor thin film, apparatus for fabricating single crystal semiconductor thin film, and method of fabricating single crystal thin film, single crystal thin film substrate, and semiconductor device
05/15/2002EP1205436A1 Crystals comprising single-walled carbon nanotubes
05/09/2002US20020055209 Thin film semiconductor device and production method for the same
04/2002
04/23/2002US6376900 Single crystal SiC
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