| Patents for C30B 1 - Single-crystal growth directly from the solid state (1,958) |
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| 04/16/2002 | US6372039 Method and apparatus for irradiation of a pulse laser beam |
| 03/27/2002 | CN1341954A Method for manufacturing crystal semiconductor material and method for making semiconductor device |
| 03/21/2002 | WO2002022920A1 Rare earth-iron garnet single crystal material and method for preparation thereof and device using rare earth-iron garnet single crystal material |
| 03/21/2002 | WO2002022919A2 Forming a single crystal semiconductor film on a non-crystalline surface |
| 02/21/2002 | US20020022350 Fabricating a thin film transistor using a crystalline semiconductor film obtained using crystallization catalyst |
| 02/21/2002 | US20020020342 Silicon carbide single-crystals |
| 02/20/2002 | CN1336683A Prodn. of photoconductor or electroconductor device by using method of horizontal and solid phase over-growth |
| 02/13/2002 | EP1179619A1 Method for crystallising amorphous layers |
| 02/05/2002 | US6344082 Fabrication method of Si nanocrystals |
| 01/23/2002 | CN1078384C Method of fabricating semiconductor device |
| 01/22/2002 | US6340657 Placing a solid starting material for the oxide high-temperature superconductor on a substrate and heating it under pressure and in oxygen atmosphere |
| 01/22/2002 | CA2253136C Single crystal sic and a method of producing the same |
| 01/22/2002 | CA2252980C Single crystal sic and a method of producing the same |
| 01/08/2002 | US6337232 Method of fabrication of a crystalline silicon thin film semiconductor with a thin channel region |
| 01/08/2002 | US6337109 Method of producing crystalline semiconductor |
| 12/11/2001 | US6329269 Semiconductor device manufacturing with amorphous film cyrstallization using wet oxygen |
| 11/13/2001 | US6315871 Exposing to ion irradiation at ambient temperature and low pressure |
| 11/08/2001 | US20010039103 Process for producing crystalline silicon thin film |
| 11/08/2001 | US20010039098 Method for fabricating silicon-on-insulator material |
| 11/01/2001 | WO2001082346A1 Method for fabricating silicon-on-insulator |
| 11/01/2001 | WO2001031659A3 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF |
| 10/25/2001 | US20010034110 Method of transforming otp rom manufacturing process into rom manufacturing process |
| 10/25/2001 | US20010033936 Silicon carbide (SiC), a polycrystalline beta-SiC layer grown on the surface of an alpha-SiC sintered base material by thermal chemical vapor deposition is heat treated to convert it into the crystal structure of the base material; mirrors |
| 10/23/2001 | CA2173709C Cristallyed bead made from a supercooled product, and process for obtaining same |
| 10/09/2001 | US6299681 Single crystal conversion control |
| 10/04/2001 | EP1137826A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 09/20/2001 | US20010023092 Method of manufacturing a semiconductor device |
| 09/12/2001 | EP1132505A2 Single-crystal silicon carbide |
| 09/06/2001 | US20010019014 Irradiating pulsed light to an amorphous base material such as glass to form the crystalline region having a nonlinear characteristic in an irradiated portion of the amorphous material |
| 08/30/2001 | WO2001063021A1 Method for single crystal growth of perovskite oxides |
| 08/16/2001 | EP1123993A2 Single crystal SiC and method of growing the same |
| 08/14/2001 | US6274463 Fabrication of a photoconductive or a cathoconductive device using lateral solid overgrowth method |
| 08/09/2001 | US20010012702 Method of crystallizing silicon film and method of manufacturing thin film transistor liquid crystal display (tft- lcd using the same |
| 08/09/2001 | US20010011519 Single crystal SiC and a method of growing the same |
| 08/08/2001 | EP1122341A1 Single crystal SiC |
| 08/08/2001 | CN1069290C Alpha-alumina powder and process for procucing the same |
| 07/17/2001 | US6261420 Irradiating pulsed light to amorphous base material to produce therein one or more single crystals or polycrystals having nonlinear characteristic |
| 07/05/2001 | DE10055694A1 Strip-like nickel metal substrate used in the production of a high temperature superconductor consists of very pure nickel which is textured |
| 06/28/2001 | WO2001046498A2 Chemical vapor deposition reactor and process chamber for said reactor |
| 06/05/2001 | US6241817 Method for crystallizing amorphous layer |
| 05/31/2001 | US20010002319 Including plastic deformation to integrate a plurality of ingots to produce an integrated ingot; large ingot having uniform performance so many wafers can be made in a slicing step to improve productivity |
| 05/15/2001 | US6232156 Method of manufacturing a semiconductor device |
| 05/09/2001 | EP1097982A1 Process for producing crystalline film |
| 05/03/2001 | WO2001031659A2 THIN FILM Hg-BASED SUPERCONDUCTORS, THERMOELECTRIC MATERIALS AND METHODS OF FABRICATION THEREOF |
| 05/03/2001 | CA2389454A1 Thin film hg-based superconductors, thermoelectric materials and methods of fabrication thereof |
| 04/18/2001 | CN1064723C Method for preparing neodymium barium copper oxygen superconductive monocrystal |
| 04/17/2001 | US6217842 Single crystal SIC and method of producing the same |
| 04/17/2001 | US6217647 Method for producing a monocrystalline layer of a conducting or semiconducting material |
| 04/10/2001 | US6214427 Method of making an electronic device having a single crystal substrate formed by solid state crystal conversion |
| 04/03/2001 | US6211535 Method of manufacturing a semiconductor device |
| 03/20/2001 | US6203772 Heat treatment, crystallization, complexing; semiconductors |
| 02/14/2001 | CN1283712A High-pressure sinter process for synthosizing large-size polymer crystal |
| 02/13/2001 | US6187679 Low temperature formation of low resistivity titanium silicide |
| 02/13/2001 | US6187279 Used as a semiconductor substrate wafer for a light-emitting diode, an x-ray optical element such as a monochromatic sorter, a high-temperature semiconductor electronic element, and a power device. |
| 01/16/2001 | US6174374 Method for annealing a semiconductor |
| 12/20/2000 | EP1060300A2 Abo 3? perovskite with a step |
| 12/12/2000 | US6159441 Heating with hydrogen halide |
| 11/28/2000 | US6153166 Single crystal SIC and a method of producing the same |
| 11/28/2000 | US6153165 A complex in which a polycrystalline plate consisting of silicon and carbon atoms is stacked on the surface of a single crystal silicon carbide base and is subjected to heat treatment, which transforms polycrystals to single crystal |
| 11/21/2000 | US6149984 Laser irradiation processing on a film that is sensitive to impurities, such as a semiconductor film that has been subjected to laser light irradiation. another object of the invention is to facilitate cleaning irradiation apparatus. |
| 11/16/2000 | WO2000068999A1 Device for detecting x-rays or gamma rays and method for making same |
| 11/08/2000 | EP0946974A4 Forming a crystalline semiconductor film on a glass substrate |
| 11/07/2000 | US6143267 Plate-like single crystal silicon carbide pieces are stacked while crystal orientation faces are arranged in same plane and crystal orientations are directionally unified and plate of silicon and carbon atoms is stacked on faces |
| 10/03/2000 | US6126741 Polycrystalline carbon conversion |
| 09/12/2000 | US6117233 Coating a substrate with a carbonaceous polysilane to form a film which is pyrolyzed in a protective gas atmosphere to form amorphous silicon carbide (sic) which is then crystallized by maintaining at high temperature |
| 08/30/2000 | EP1032055A2 Method for producing thin films of ribbon-like oxide high-temperature superconductor |
| 08/08/2000 | US6099639 Method for solid-state formation of diamond |
| 08/01/2000 | US6096581 Method for operating an active matrix display device with limited variation in threshold voltages |
| 06/14/2000 | EP1008677A1 Method for the conversion of polycrystalline carbon |
| 06/08/2000 | WO2000032853A1 Large-size monoatomic and monocrystalline layer, made of diamond-type carbon and device for making same |
| 06/07/2000 | CN1255556A Single crystal transition control |
| 05/31/2000 | EP1004690A1 Single crystal conversion control |
| 05/16/2000 | CA2118147C Method for lowering the phase transformation temperature of a metal silicide |
| 04/25/2000 | US6053973 Single crystal SiC and a method of producing the same |
| 03/29/2000 | EP0989102A1 Process for producing amorphous material containing single-crystal or polycrystal regions and material produced |
| 03/14/2000 | US6037242 Forming a buffer layer of aluminum-indium-arsenic on a gallium-arsenic substrate in an amorphous state, annealing the amorphous buffer layer to crystallize into single crystal, forming second and third single crystal buffer layers |
| 01/05/2000 | EP0969126A2 Method of fabrication of Si nanostructures |
| 12/22/1999 | EP0964943A1 METHOD FOR GROWING MONOCRYSTALS OF HIGH-TEMPERATURE SUPRACONDUCTORS MADE OF RARE EARTH-CUPRATES OF FORM SE 1+x?Ba 2-x?Cu 3?O 7-$g(d)? |
| 12/22/1999 | CN1239519A Single crystal sic and process for preparing same |
| 12/15/1999 | EP0964084A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 12/15/1999 | EP0964081A2 Single crystal SiC and a method of producing the same |
| 12/15/1999 | CN1047412C Solide state thermal conversion of polycrystalline alumina to sapphire |
| 11/24/1999 | CN1236481A Forming a crystalline semiconductor film on a glass substrate |
| 10/26/1999 | US5972105 Method of fabricating semiconductor device |
| 10/07/1999 | WO1999045180A3 Abo3 perovskite with a step |
| 10/06/1999 | EP0946974A1 Forming a crystalline semiconductor film on a glass substrate |
| 10/06/1999 | CN1231003A Single crystal SiC and process for preparing the same |
| 09/22/1999 | CN1229445A Single crystal SiC and process for preparing the same |
| 09/10/1999 | WO1999045180A2 Abo3 perovskite with a step |
| 09/09/1999 | DE19808778A1 Verfahren zur Herstellung eines ABO¶3¶-Substrates mit einer Stufe A method for producing a substrate with a step-ABO¶3¶ |
| 08/17/1999 | US5940690 Production method for a thin film semiconductor device with an alignment marker made out of the same layer as the active region |
| 08/10/1999 | US5935550 Calcining under atmospheric pressure a transition alumina or alumina precursor in the presence of a hydrogen halide and a shape controlling agent and optionally a seed crystal; narrow particle size distribution; raw material for fillers, sinters |
| 08/04/1999 | CN1044497C Method for solid regional melting growth of 1-3 micron Te-Cd-Hg crystal material |
| 07/22/1999 | DE19802131A1 Production of a monocrystalline layer for semiconductor device |
| 07/20/1999 | US5925421 Laser irradiation method |
| 06/30/1999 | EP0926271A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 06/30/1999 | EP0926109A1 SiC COMPOSITE AND METHOD OF PRODUCTION THEREOF |
| 06/29/1999 | US5916363 Oriented molybdenum or tungsten single crystal and manufacturing method thereof |
| 06/16/1999 | EP0922792A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME |
| 06/09/1999 | EP0921214A1 Single crystal silicon carbide and process for preparing the same |