| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/04/1990 | EP0244479B1 Process for producing a semi-isolating substrate made of thermally stable and non-dislocated iii-v material |
| 04/04/1990 | CN1007480B Superconductive device |
| 04/03/1990 | US4914063 Reacting high purity silicon particles and amines in liquid phase |
| 04/03/1990 | US4913199 Arrangement for the complete emptying of quartz tanks or crucibles filled with a silicon melt following silicon band drawing |
| 03/28/1990 | EP0360305A2 Process for producing particles of a composite material, and their use |
| 03/27/1990 | US4912528 Trace metals analysis in semiconductor material |
| 03/27/1990 | US4911896 Drawing a single crystal silicon rod from molten polysilicon |
| 03/21/1990 | EP0359417A2 Fabrication of silicon structures by single side, multiple step etching process |
| 03/21/1990 | EP0358974A2 Process for forming thin film of superconductive compound metal oxide |
| 03/21/1990 | CN1040634A Method for producing mono-crystalline alumina grains |
| 03/20/1990 | US4909998 Apparatus for performing solution growth of group II-VI compound semiconductor crystal |
| 03/20/1990 | CA1266770A1 Thermoelectric alloy composition |
| 03/14/1990 | EP0358309A1 Accelerated whisker growth on iron-chromium-aluminium alloy foil |
| 03/14/1990 | EP0358185A1 Ni-base single-crystal superalloy excellent in high-temperature strength and high-temperature corrosion resistance |
| 03/14/1990 | EP0357857A1 Human serum albumin crystals and method of preparation |
| 03/14/1990 | CN1040401A Vapour-phase gaas/inp hetero epitaxial technique |
| 03/14/1990 | CN1040400A Method of controlling nitrogen content in cz silicon single crystal |
| 03/13/1990 | US4908043 Method of producing crystals of anhydrous sodium sulfide |
| 03/08/1990 | WO1990002221A1 Cristallization in a gravitational force field |
| 03/07/1990 | EP0357507A2 Superconducting article containing thallium |
| 03/07/1990 | CN1040228A Growth of lithium triborate monocrystal and its use |
| 03/06/1990 | US4906325 Method of making single-crystal mercury cadmium telluride layers |
| 03/06/1990 | US4906324 Method for the preparation of silicon carbide platelets |
| 02/28/1990 | EP0356352A2 Yttrium rich conductive articles and processes for their preparation |
| 02/28/1990 | EP0356059A2 Process for doping crystals of wide band gap semiconductors |
| 02/28/1990 | EP0355476A2 Composition for growth of homogeneous lithium niobate crystals |
| 02/27/1990 | US4904622 Process for the preparation of silicon carbide whiskers |
| 02/27/1990 | US4904616 Method of depositing arsine, antimony and phosphine substitutes |
| 02/27/1990 | US4904530 Ferrite particles; high information density |
| 02/27/1990 | US4904336 Method of manufacturing a single crystal of compound semiconductor and apparatus for the same |
| 02/22/1990 | WO1990001809A1 EPITAXIAL Ba-Y-Cu-O SUPERCONDUCTOR FILM ON PEROVSKITE STRUCTURE SUBSTRATE |
| 02/22/1990 | WO1990001471A1 Method of preparing rigid mullite-whisker felt |
| 02/20/1990 | US4902376 Supplying extra arsenci to control composition stoichiometry |
| 02/20/1990 | CA1265980A1 Gallium arsenide crystal grown on silicon substrate and method of growing such crystal |
| 02/20/1990 | CA1265922A1 Photoactive pyrite layer and process for making and using same |
| 02/14/1990 | CN1006815B Technique for annealing of yal garnet crystal containing nd and ce |
| 02/13/1990 | US4900393 Process for producing single-crystal ceramics |
| 02/07/1990 | EP0353423A2 Unstrained defect-free epitaxial mismatched heterostructures and method of fabrication |
| 02/07/1990 | EP0353256A1 METHOD OF PURIFYING AND DEPOSITING GROUP IIIb AND GROUP Vb COMPOUNDS TO PRODUCE EPITAXIAL FILMS. |
| 02/06/1990 | US4898641 Controlled deviation of value of double refraction |
| 01/31/1990 | EP0352931A1 Organic thin film controlled molecular epitaxy |
| 01/31/1990 | EP0352860A2 Process for producing iron garnet coatings |
| 01/31/1990 | EP0352857A2 Process for producing iron garnet coatings |
| 01/31/1990 | EP0352607A2 Arsine, antimony and phosphine substitutes |
| 01/30/1990 | US4897367 Heating |
| 01/30/1990 | US4897360 Annealing a chemically vapor-deposited film to control tensile strain |
| 01/30/1990 | US4897149 Method of fabricating single-crystal substrates of silicon carbide |
| 01/25/1990 | WO1990000637A1 Process for producing artificial rock crystal |
| 01/24/1990 | EP0179852B1 Doped and undoped single crystal multilayered structures |
| 01/17/1990 | EP0351176A2 Low gravity enhanced growth of phthalocyanine polymorphs |
| 01/16/1990 | US4893909 Magneto-optical light switching element and method of manufacturing same |
| 01/10/1990 | EP0350101A1 Monocrystalline MnZn-ferroferrite material having a high content of Zn, and a magnetic head manufactured from said material |
| 01/10/1990 | EP0349633A1 Polysilicon thin film process |
| 01/10/1990 | CN1038722A Epitaxial deposition |
| 01/10/1990 | CN1038673A Microwave plasma treating apparatus |
| 01/09/1990 | US4892568 Process for removing n-type impurities from liquid or gaseous substances produced in the gas-phase deposition of silicon |
| 01/03/1990 | EP0349117A2 Trace metals analysis in semiconductor material |
| 01/03/1990 | EP0348650A1 Process and apparatus for producing textured oxide high Tc superconductors |
| 01/03/1990 | EP0348496A1 Chemical vapor deposition of mixed oxide films. |
| 01/02/1990 | US4891091 Sodium ions at interface |
| 12/28/1989 | WO1989012914A1 PRODUCTION OF ORIENTED LAYERS OF THE HIGH-TEMPERATURE SUPERCONDUCTOR Bi-Sr and Tl-Ba-Ca-Cu OXIDE |
| 12/28/1989 | DE3821614A1 Covering layer of amorphous carbon on a substrate, process for producing the covering layer and use of the covering layer |
| 12/27/1989 | EP0348085A1 Vacuum deposition apparatus |
| 12/27/1989 | EP0348026A1 Diamond growth on a substrate using microwave energy |
| 12/26/1989 | US4889493 Method of manufacturing the substrate of GaAs compound semiconductor |
| 12/20/1989 | EP0346987A1 A method of forming thin defect-free monocrystalline strips of semiconductor materials on insulators |
| 12/20/1989 | EP0346794A1 Diamond laser crystal and method of manufacturing the same |
| 12/20/1989 | CN1038134A Lithium niobate single crystal having congruent composition used in surface wave device, and manufacturing process therefor |
| 12/20/1989 | CN1038133A Process and device for reducing water content in piezoelectric gapo4-crystal unit, and crystal unit thereby |
| 12/14/1989 | WO1989012120A1 Lithium niobate single crystals with congruent structure and process for producing them |
| 12/14/1989 | WO1989011897A1 Silicon dioxide films on diamond |
| 12/13/1989 | EP0345618A2 Polycrystalline silicon |
| 12/13/1989 | EP0345596A2 Solar cell silicon, method of producing it and its use |
| 12/13/1989 | EP0345441A2 High-Tc superconductor-gallate crystal structures |
| 12/13/1989 | CN1037999A Mixed lanthanum-magnesium aluminates, their production process and lasers using these aluminates |
| 12/13/1989 | CN1037933A Method and apparatus for manufacturing silicon single crystals |
| 12/12/1989 | US4886683 Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials |
| 12/07/1989 | DE3818537A1 Lithiumniobat-einkristalle mit kongruenter zusammensetzung, insbesondere fuer oberflaechenwellenanordnungen, und verfahren zu deren herstellung Lithium niobate single crystals with congruent composition, in particular for oberflaechenwellenanordnungen, and processes for their preparation |
| 12/06/1989 | EP0344904A2 Growth of semi-insulating indium phosphide by liquid phase epitaxy |
| 12/06/1989 | EP0344812A2 Method of manufacturing superconductor of ceramics superconductive material |
| 12/06/1989 | EP0344372A1 Hexagonal silicon carbide platelets and preforms and methods for making and using same |
| 12/06/1989 | EP0344352A1 Method for making artificial layered high-Tc superconductors |
| 11/30/1989 | WO1989011458A1 Method of forming crystallite-oriented superconducting ceramics by electrodeposition and thin film superconducting ceramic made thereby |
| 11/29/1989 | EP0343846A2 Process for the preparation of polycrystalline diamond |
| 11/29/1989 | EP0343602A2 Microwave plasma treating apparatus |
| 11/29/1989 | EP0343381A1 Improved diamond crystal growth process |
| 11/28/1989 | US4883559 Reduction of transition metal oxide or nitride with cyanide salt |
| 11/28/1989 | CA1263293A1 Process and apparatus for the cyclical manufacture of silicon shaped articles |
| 11/23/1989 | EP0342841A1 Method for producing mono-crystalline alumina grains |
| 11/22/1989 | CN1037282A Catalyst for dehydrogenating organic compounds, process for its preparation and its use |
| 11/21/1989 | US4882136 Process for the production of transparent aluminum nitride films |
| 11/21/1989 | US4882135 Process for the production of transparent aluminum nitride coatings from ammine salts of aluminum iodides |
| 11/15/1989 | EP0341788A1 High-current-density superconductor thin films and methods for their production |
| 11/14/1989 | US4881003 Method and device for reducing the water content in piezoelectric GAPO.sub.4 |
| 11/14/1989 | US4880612 Aluminum, iodine compound and ammonia |
| 11/14/1989 | US4880492 Organometallic compounds |
| 11/02/1989 | WO1989010634A1 Epitaxial deposition |
| 11/02/1989 | EP0339992A1 Bonding diamond to diamond |
| 11/02/1989 | EP0339704A1 Catalyst for dehydrogenating organic compounds, a process for its preparation and its use |
| 10/27/1989 | EP0298084A4 Method of forming a ceramic product. |