Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/1980
10/30/1980WO1980002247A1 Method of processing diamonds
10/29/1980EP0018128A1 Reverse osmosis method and apparatus
10/29/1980EP0018111A1 Method of producing ferrite single crystals
10/28/1980US4230494 Article highly resistant to corrosion by gallium phosphide and gallium arsenide
10/21/1980US4229506 Piezoelectric crystalline film of zinc oxide and method for making same
10/21/1980US4229499 Acid phthalate crystal
10/21/1980CA1087964A1 Crystal growing furnace
10/16/1980EP0018397A4 Layer of crystalline silicon having (iii) orientation on (iii) surface of lithium aluminium.
10/15/1980EP0016910A1 Method of forming epitaxial tunnels in crystalline structures
10/14/1980US4227962 Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence
10/14/1980CA1087718A1 Method for producing a layer of crystalline silicon
10/07/1980US4226834 Lateral pulling growth of crystal ribbons and apparatus therefor
10/07/1980US4226623 Method for polishing a single crystal or gadolinium gallium garnet
09/1980
09/30/1980US4225409 Metallic modified material of intermetallic compound and a process for the production of the same
09/30/1980CA1086611A1 Epitaxial growth of iiia-vb compounds at low temperatures
09/30/1980CA1086610A1 Accelerated growth from the gaseous phase of gallium arsenide crystals
09/23/1980US4224296 Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same
09/23/1980CA1086431A1 Etching of iii-v semiconductor materials in the preparation of heterodiodes
09/16/1980US4222794 Single crystal nickel superalloy
09/16/1980CA1085703A1 Method of producing phosphorus-doped silicon monocrystals
09/02/1980US4220677 Polycrystalline superhard material and method of producing thereof
09/02/1980US4220488 Gas-phase process for the production of an epitaxial layer of indum phosphide
09/02/1980CA1084720A1 Method for production of coarse crystalline allumina
08/1980
08/26/1980US4219199 Molybdenum insoluble in hydrogen peroxide
08/20/1980EP0014528A1 A method of reducing the colour of diamond
08/19/1980US4218269 Method for the epitaxial deposition of several layers
08/12/1980US4217166 Process for the production of lithium fluoride detectors
08/12/1980US4217165 Silicon
08/06/1980EP0013985A2 Process for producing macrocrystalline silicon sheets with directional grains
07/1980
07/29/1980CA1082424A1 Method of preparing crystalline compounds a suiva xx b suvia xx
07/15/1980CA1081586A1 Method and apparatus for forming silicon crystalline bodies
07/15/1980CA1081558A1 Method for dip-coating ceramic with molten silicon
07/08/1980US4211821 Monocrystalline like layers, processes of manufacturing such layers, and articles comprising such layers
07/01/1980US4210486 Process for determining the effective doping agent content of hydrogen for the production of semiconductors
07/01/1980CA1080589A1 Method for producing single crystal gadolinium gallium
07/01/1980CA1080588A1 Method of forming and growing a single crystal of a semiconductor compound
06/1980
06/17/1980CA1079613A1 Process for synthesizing and growing single crystalline beryl out of a molten salt
06/17/1980CA1079612A1 Method and apparatus for reducing residual stresses in crystals
05/1980
05/27/1980US4205117 Piezoelectric crystalline film of zinc oxide and method for making same
05/14/1980EP0010920A1 Liquid phase epitaxial process
04/1980
04/08/1980US4197273 Apparatus for controlling the directional solidification of a liquid-solid system
04/08/1980US4197157 Method for forming refractory tubing
04/01/1980US4196171 Apparatus for making a single crystal of III-V compound semiconductive material
03/1980
03/18/1980US4193975 Metal solvent
03/04/1980CA1073117A1 Process and apparatus for the preparation of semiconductor-grade silicon
02/1980
02/19/1980US4189521 Epitaxial growth of M-type hexagonal ferrite films on spinel substrates and composite
02/12/1980US4188177 System for fabrication of semiconductor bodies
02/07/1980WO1980000126A1 Layer of crystalline silicon having(111)orien tation on(111)surface of lithium aluminum
02/05/1980US4187083 Hard materials of BCN in tetrahedral form and method of making it
02/05/1980CA1071075A1 Method of cleaning surfaces
02/05/1980CA1071068A1 Method of manufacturing single crystals by growth from the vapour phase
01/1980
01/09/1980EP0006118A1 Process for vapor-phase growing of gallium arsenide containing a large concentration of germanium
12/1979
12/12/1979EP0005744A1 Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration
12/11/1979US4178197 Formation of epitaxial tunnels utilizing oriented growth techniques
12/11/1979CA1067800A1 Control of oxygen in silicon crystals
12/04/1979US4177372 Method and apparatus for laser zone melting
12/04/1979US4177084 Method for producing a low defect layer of silicon-on-sapphire wafer
11/1979
11/28/1979EP0005442A1 Process and apparatus for producing aluminium nitride useful for electronic applications
11/27/1979US4175610 Process and apparatus for the semicontinuous production of silicon moldings
11/13/1979US4174422 Layer of nickel crystals intermediate between monocrystalline sodium chloride and silver
10/1979
10/31/1979EP0004974A2 Process for producing a single crystal of KTiOPO4 or its analogues
10/30/1979US4172756 Vapor deposition of monocrystalline gallium for semiconductors
10/02/1979US4169755 Growth of crystalline rods of gallium arsenide in a crucible of specially treated fibrous silicon dioxide
10/02/1979US4169739 Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action
09/1979
09/25/1979US4169189 Magnetic structure
09/11/1979CA1062130A1 Process for producing large-size self-supporting plates of silicon
09/04/1979CA1061688A1 Silicon crystals and process for their preparation
09/04/1979CA1061687A1 Method of polarization of a ferroelectric material
08/1979
08/21/1979US4165249 Method of purifying germanium bodies
08/21/1979CA1060762A1 Method and apparatus for growing hg12 crystals
08/14/1979US4164676 Piezoelectric crystalline film of zinc oxide containing additive elements
07/1979
07/24/1979CA1058827A1 Method of preparing galliumphosphide
06/1979
06/26/1979US4159354 Method for making thin film III-V compound semiconductors for solar cells involving the use of a molten intermediate layer
06/26/1979CA1057171A1 Electrical contact for peltier-induced liquid phase epitaxy on gallium compounds
06/12/1979US4158038 Temperature profile controller
06/05/1979US4157373 Apparatus for the production of ribbon shaped crystals
06/05/1979CA1055819A1 Stabilization of aluminum arsenide
06/05/1979CA1055818A1 Isothermal growth of bubble domain garnet films
06/05/1979CA1055816A1 Method of producing sodium beta-alumina single crystals
05/1979
05/30/1979EP0002080A1 Method for the epitaxial deposition of several layers and devices, in particular a semiconductor laser device made by this method
05/22/1979US4156050 Piezoelectric crystalline films and method of preparing the same
05/15/1979US4154631 Equilibrium growth technique for preparing PbSx Se1-x epilayers
05/15/1979US4154630 Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process
05/15/1979US4154025 Method for preparing oxide piezoelectric material wafers
05/08/1979US4153486 Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen
05/01/1979US4152408 Fibrous calcium sulfate
05/01/1979US4152194 Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt
05/01/1979US4152182 Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide
05/01/1979CA1053545A1 Non-crucible zone-melting of a semi-conductor
04/1979
04/04/1979EP0001373A1 Method of forming smooth and pinhole-free silicon carbide films on a silicon substrate
04/03/1979US4147814 Method of manufacturing high-purity silicon rods having a uniform sectional shape
04/03/1979US4147571 Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system
03/1979
03/20/1979CA1050862A1 Magnetic bubble devices and garnet films therefor
03/13/1979US4144117 Method for producing a lithium tantalate single crystal
03/13/1979US4144116 Vapor deposition of single crystal gallium nitride
02/1979
02/27/1979US4141778 Vapor deposition, decomposition
02/27/1979US4141777 Method of preparing doped single crystals of cadmium telluride
02/13/1979US4139678 Piezoelectric crystalline films and method of preparing the same
02/06/1979US4138530 Rare earth, iron, and manganese or ruthenium garnet
02/06/1979CA1047897A1 Monocrystalline silicates and method of growth