Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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10/30/1980 | WO1980002247A1 Method of processing diamonds |
10/29/1980 | EP0018128A1 Reverse osmosis method and apparatus |
10/29/1980 | EP0018111A1 Method of producing ferrite single crystals |
10/28/1980 | US4230494 Article highly resistant to corrosion by gallium phosphide and gallium arsenide |
10/21/1980 | US4229506 Piezoelectric crystalline film of zinc oxide and method for making same |
10/21/1980 | US4229499 Acid phthalate crystal |
10/21/1980 | CA1087964A1 Crystal growing furnace |
10/16/1980 | EP0018397A4 Layer of crystalline silicon having (iii) orientation on (iii) surface of lithium aluminium. |
10/15/1980 | EP0016910A1 Method of forming epitaxial tunnels in crystalline structures |
10/14/1980 | US4227962 Prevention of decomposition of phosphorous containing substrates during an epitaxial growth sequence |
10/14/1980 | CA1087718A1 Method for producing a layer of crystalline silicon |
10/07/1980 | US4226834 Lateral pulling growth of crystal ribbons and apparatus therefor |
10/07/1980 | US4226623 Method for polishing a single crystal or gadolinium gallium garnet |
09/30/1980 | US4225409 Metallic modified material of intermetallic compound and a process for the production of the same |
09/30/1980 | CA1086611A1 Epitaxial growth of iiia-vb compounds at low temperatures |
09/30/1980 | CA1086610A1 Accelerated growth from the gaseous phase of gallium arsenide crystals |
09/23/1980 | US4224296 Super hard-highly pure silicon nitrides, and a process and apparatus for producing the same |
09/23/1980 | CA1086431A1 Etching of iii-v semiconductor materials in the preparation of heterodiodes |
09/16/1980 | US4222794 Single crystal nickel superalloy |
09/16/1980 | CA1085703A1 Method of producing phosphorus-doped silicon monocrystals |
09/02/1980 | US4220677 Polycrystalline superhard material and method of producing thereof |
09/02/1980 | US4220488 Gas-phase process for the production of an epitaxial layer of indum phosphide |
09/02/1980 | CA1084720A1 Method for production of coarse crystalline allumina |
08/26/1980 | US4219199 Molybdenum insoluble in hydrogen peroxide |
08/20/1980 | EP0014528A1 A method of reducing the colour of diamond |
08/19/1980 | US4218269 Method for the epitaxial deposition of several layers |
08/12/1980 | US4217166 Process for the production of lithium fluoride detectors |
08/12/1980 | US4217165 Silicon |
08/06/1980 | EP0013985A2 Process for producing macrocrystalline silicon sheets with directional grains |
07/29/1980 | CA1082424A1 Method of preparing crystalline compounds a suiva xx b suvia xx |
07/15/1980 | CA1081586A1 Method and apparatus for forming silicon crystalline bodies |
07/15/1980 | CA1081558A1 Method for dip-coating ceramic with molten silicon |
07/08/1980 | US4211821 Monocrystalline like layers, processes of manufacturing such layers, and articles comprising such layers |
07/01/1980 | US4210486 Process for determining the effective doping agent content of hydrogen for the production of semiconductors |
07/01/1980 | CA1080589A1 Method for producing single crystal gadolinium gallium |
07/01/1980 | CA1080588A1 Method of forming and growing a single crystal of a semiconductor compound |
06/17/1980 | CA1079613A1 Process for synthesizing and growing single crystalline beryl out of a molten salt |
06/17/1980 | CA1079612A1 Method and apparatus for reducing residual stresses in crystals |
05/27/1980 | US4205117 Piezoelectric crystalline film of zinc oxide and method for making same |
05/14/1980 | EP0010920A1 Liquid phase epitaxial process |
04/08/1980 | US4197273 Apparatus for controlling the directional solidification of a liquid-solid system |
04/08/1980 | US4197157 Method for forming refractory tubing |
04/01/1980 | US4196171 Apparatus for making a single crystal of III-V compound semiconductive material |
03/18/1980 | US4193975 Metal solvent |
03/04/1980 | CA1073117A1 Process and apparatus for the preparation of semiconductor-grade silicon |
02/19/1980 | US4189521 Epitaxial growth of M-type hexagonal ferrite films on spinel substrates and composite |
02/12/1980 | US4188177 System for fabrication of semiconductor bodies |
02/07/1980 | WO1980000126A1 Layer of crystalline silicon having(111)orien tation on(111)surface of lithium aluminum |
02/05/1980 | US4187083 Hard materials of BCN in tetrahedral form and method of making it |
02/05/1980 | CA1071075A1 Method of cleaning surfaces |
02/05/1980 | CA1071068A1 Method of manufacturing single crystals by growth from the vapour phase |
01/09/1980 | EP0006118A1 Process for vapor-phase growing of gallium arsenide containing a large concentration of germanium |
12/12/1979 | EP0005744A1 Process for producing epitaxial layers on selectively doped silicon substrates with high impurity concentration |
12/11/1979 | US4178197 Formation of epitaxial tunnels utilizing oriented growth techniques |
12/11/1979 | CA1067800A1 Control of oxygen in silicon crystals |
12/04/1979 | US4177372 Method and apparatus for laser zone melting |
12/04/1979 | US4177084 Method for producing a low defect layer of silicon-on-sapphire wafer |
11/28/1979 | EP0005442A1 Process and apparatus for producing aluminium nitride useful for electronic applications |
11/27/1979 | US4175610 Process and apparatus for the semicontinuous production of silicon moldings |
11/13/1979 | US4174422 Layer of nickel crystals intermediate between monocrystalline sodium chloride and silver |
10/31/1979 | EP0004974A2 Process for producing a single crystal of KTiOPO4 or its analogues |
10/30/1979 | US4172756 Vapor deposition of monocrystalline gallium for semiconductors |
10/02/1979 | US4169755 Growth of crystalline rods of gallium arsenide in a crucible of specially treated fibrous silicon dioxide |
10/02/1979 | US4169739 Method of making silicon-impregnated foraminous sheet by partial immersion and capillary action |
09/25/1979 | US4169189 Magnetic structure |
09/11/1979 | CA1062130A1 Process for producing large-size self-supporting plates of silicon |
09/04/1979 | CA1061688A1 Silicon crystals and process for their preparation |
09/04/1979 | CA1061687A1 Method of polarization of a ferroelectric material |
08/21/1979 | US4165249 Method of purifying germanium bodies |
08/21/1979 | CA1060762A1 Method and apparatus for growing hg12 crystals |
08/14/1979 | US4164676 Piezoelectric crystalline film of zinc oxide containing additive elements |
07/24/1979 | CA1058827A1 Method of preparing galliumphosphide |
06/26/1979 | US4159354 Method for making thin film III-V compound semiconductors for solar cells involving the use of a molten intermediate layer |
06/26/1979 | CA1057171A1 Electrical contact for peltier-induced liquid phase epitaxy on gallium compounds |
06/12/1979 | US4158038 Temperature profile controller |
06/05/1979 | US4157373 Apparatus for the production of ribbon shaped crystals |
06/05/1979 | CA1055819A1 Stabilization of aluminum arsenide |
06/05/1979 | CA1055818A1 Isothermal growth of bubble domain garnet films |
06/05/1979 | CA1055816A1 Method of producing sodium beta-alumina single crystals |
05/30/1979 | EP0002080A1 Method for the epitaxial deposition of several layers and devices, in particular a semiconductor laser device made by this method |
05/22/1979 | US4156050 Piezoelectric crystalline films and method of preparing the same |
05/15/1979 | US4154631 Equilibrium growth technique for preparing PbSx Se1-x epilayers |
05/15/1979 | US4154630 Method of manufacturing semiconductor devices having isoelectronically built-in nitrogen and having the p-n junction formed subsequent to the deposition process |
05/15/1979 | US4154025 Method for preparing oxide piezoelectric material wafers |
05/08/1979 | US4153486 Silicon tetrachloride epitaxial process for producing very sharp autodoping profiles and very low defect densities on substrates with high concentration buried impurity layers utilizing a preheating in hydrogen |
05/01/1979 | US4152408 Fibrous calcium sulfate |
05/01/1979 | US4152194 Growth of silicon carbide crystals on a seed while pulling silicon crystals from a melt |
05/01/1979 | US4152182 Process for producing electronic grade aluminum nitride films utilizing the reduction of aluminum oxide |
05/01/1979 | CA1053545A1 Non-crucible zone-melting of a semi-conductor |
04/04/1979 | EP0001373A1 Method of forming smooth and pinhole-free silicon carbide films on a silicon substrate |
04/03/1979 | US4147814 Method of manufacturing high-purity silicon rods having a uniform sectional shape |
04/03/1979 | US4147571 Method for vapor epitaxial deposition of III/V materials utilizing organometallic compounds and a halogen or halide in a hot wall system |
03/20/1979 | CA1050862A1 Magnetic bubble devices and garnet films therefor |
03/13/1979 | US4144117 Method for producing a lithium tantalate single crystal |
03/13/1979 | US4144116 Vapor deposition of single crystal gallium nitride |
02/27/1979 | US4141778 Vapor deposition, decomposition |
02/27/1979 | US4141777 Method of preparing doped single crystals of cadmium telluride |
02/13/1979 | US4139678 Piezoelectric crystalline films and method of preparing the same |
02/06/1979 | US4138530 Rare earth, iron, and manganese or ruthenium garnet |
02/06/1979 | CA1047897A1 Monocrystalline silicates and method of growth |