Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
05/1999
05/26/1999EP0576566B1 A method for the preparation and doping of highly insulating monocrystalline gallium nitride thin films
05/26/1999CN1043479C Crucible down-going method for growing of lead tungstate scintillating mega-single crystal
05/25/1999CA2131100C Crystallographically aligned ferroelectric films usable in memories and method of crystallographically aligning perovskite films
05/19/1999EP0917192A1 Method of determining the model of oxygen precipitation behaviour in a silicon monocrystalline wafer, method of determining a process for producing silicon monocrystalline wafers using said model, and recording medium carrying a program for determining the oxygen precipitation behaviour model in a silicon monocrystalline wafer
05/19/1999EP0916750A1 Single crystal SiC and a method of producing the same
05/19/1999EP0916749A1 Single crystal SiC and a method of producing the same
05/19/1999EP0916745A1 Two piece diamond deposition mandrel having graphite ring
05/19/1999EP0730670B1 Coated body, its method of production and its use
05/19/1999CN1043447C Multi-layered ceramic capacitor
05/18/1999US5904912 Heat treatment of single crystal
05/18/1999US5904771 Stable evaporation rate
05/18/1999US5904770 Crystallization; catalysis with metal silicide; radiating with laser light
05/18/1999US5904769 Epitaxial growth method
05/18/1999US5904768 Adjusting gas pressure; aspirating vapors and particles away from melt
05/18/1999US5904767 Irradiation of singls crystal into phosphorus isotope
05/14/1999WO1999023284A1 Apparatus for growing crystals
05/12/1999EP0914484A1 Nickel-base superalloy
05/12/1999EP0914483A1 Nickel-base superalloy
05/12/1999EP0795049B1 Epitaxial growth of silicon carbide and resulting silicon carbide structures
05/11/1999US5902397 Crystal holder
05/11/1999US5902394 Oscillating crucible for stabilization of Czochralski (CZ) silicon melt
05/11/1999CA2096305C Process for the preparation of magnesium chloride particles with a polyhedral structure; magnesium chloride particles with a polyhedral structure. catalytic component supported bythese particles. polyolefins prepared with said catalytic component.
05/06/1999WO1999022412A1 Supraconductor structure with a glass substrate and a high temperature supraconductor deposited thereon in addition to a method for producing said structure
05/06/1999WO1999022049A1 Method of polishing cvd diamond films by oxygen plasma
05/06/1999WO1999021681A1 Method of bonding cast superalloys
05/06/1999WO1999021680A2 Turbine blades made from multiple single crystal cast superalloy segments
05/06/1999EP0913850A1 Narrow titanium-containing wire, process for producing narrow titanium-containing wire, structure, and electron-emitting device
05/06/1999CA2309086A1 Superconductor construction with glass substrate and high-temperature superconductor which has been deposited thereon, and process for producing the construction
05/06/1999CA2307471A1 Method of bonding cast superalloys
05/06/1999CA2307230A1 Turbine blades made from multiple single crystal cast superalloy segments
05/05/1999CN1215767A Non-linear optic crystal aluminium-oxygen-barium borate
05/05/1999CN1215766A Method for growing diamond crystal on liquid surface
05/05/1999CN1043256C Order arranged nanometer carbon tube, its preparing method and special device
05/04/1999US5900225 Formation of diamond materials by rapid-heating and rapid-quenching of carbon-containing materials
05/04/1999US5900170 Melting a filler material into a single crystal metallic substrate with large beam diameter for extended length of time producing molten pool with low aspect ratio
05/04/1999US5900065 Apparatus for the plasma-chemical deposition of polycrystalline diamond
05/04/1999US5900063 Method and apparatus for coating a substrate
05/04/1999US5900058 Apparatus for producing single crystal
05/04/1999US5900055 Method of manufacturing silicon monocrystal by continuously charged Czochralski method
05/04/1999US5900054 Method of manufacturing oxide single crystal
05/04/1999US5899720 Process of fabricating salicide structure from high-purity reproducible cobalt layer without sacrifice of leakage current and breakdown voltage of P-N junction
05/04/1999CA2247818A1 Two piece diamond deposition mandrel having graphite ring
05/04/1999CA2155144C Diamond-coated composite cutting tool and method of making
04/1999
04/29/1999WO1999020816A1 Method for producing a gallium nitride epitaxial layer
04/29/1999WO1999020815A1 Process for preparing a silicon melt from a polysilicon charge
04/27/1999US5898516 Having bismuth-substituted iron garnet single crystal
04/27/1999US5898020 Structures having enhanced biaxial texture and method of fabricating same
04/27/1999US5897954 Epitaxially layered structure
04/27/1999US5897942 Coated body, method for its manufacturing as well as its use
04/27/1999US5897706 Methods for crucible attachment to support base of single crystal pulling apparatus and support base assembly apparatus and support base employed therein
04/27/1999US5897705 Process for the production of an epitaxially coated semiconductor wafer
04/27/1999CA2081612C Process for manufacturing a critical-high-temperature superconducting flexible conductor, and conductor thus obtained
04/21/1999EP0910115A1 Heat-treating method and radiant heating device
04/21/1999EP0909840A1 Method for producing a silicon single crystal having few crystal defects, and a silicon single crystal and silicon wafers produced by the method
04/21/1999EP0909835A1 Superhard material film structure, process of making and use of same
04/21/1999EP0909340A1 Multilayered material, process and device for producing a multilayered material
04/21/1999EP0738336B1 Oxide coated cutting tool
04/20/1999US5895769 In-situ crystallized zeolite containing composition (LAI-ISC)
04/20/1999US5895594 Silicon polyrods
04/20/1999US5895527 Single crystal pulling apparatus
04/20/1999US5895526 Process for growing single crystal
04/14/1999EP0909025A2 Diamond wafer, method of estimating a diamond wafer and diamond surface acoustic wave device
04/08/1999WO1999017381A1 Method and device for producing a wafer from a semiconducting material
04/08/1999WO1999016941A1 Substrates for superconductors
04/08/1999WO1999016939A1 Heat shield for crystal puller
04/08/1999WO1999016729A1 Diamond core with a diamond coating
04/08/1999CA2305571A1 Substrates for superconductors
04/07/1999CN1213020A Preparing rare-earth ion doped LN, LT optical super lattice material and its application
04/06/1999US5891243 Production of heavy doped ZnSe crystal
04/06/1999US5891241 Synthesis of diamond single crystal from hydrogenated amorphous carbon
04/06/1999US5891240 Radio frequency automatic identification system
04/01/1999WO1999016119A1 Process for the preparation of silicon wafers having a controlled distribution of oxygen precipitate nucleation centers
04/01/1999DE19742653A1 Verfahren und Vorrichtung zum Herstellen einer Scheibe aus halbleitendem Material Method and apparatus for manufacturing a disc of semiconducting material
03/1999
03/31/1999EP0905288A1 Process for preparing semiconductor monocrystalline thin film
03/31/1999EP0904430A1 Method and apparatus for making directional solidification castings
03/31/1999EP0811085A4 St-cut and at-cut oriented seed bodies for quartz crystal synthesis and method for making the same
03/30/1999US5888846 Method for microfabricating diamond
03/30/1999US5888451 Containing cr, cobalt, mo, w, re, al, ti, ta, hf, c, b, and y and having insubstantial offset between gamma and gamma prime phases
03/30/1999US5888298 Member-handling mechanism, and member-handling jig for a crystal pulling apparatus
03/30/1999US5888293 Material supplied for fabricating single-crystal semiconductor
03/24/1999EP0903429A2 Process for producing heavily doped silicon
03/24/1999EP0903428A2 Apparatus and method for determining crystal diameters
03/24/1999EP0779940B1 Method for the deposition of a diamond film on an electroless-plated nickel layer
03/24/1999CN1211814A Method of forming semiconductor device
03/23/1999US5886203 Metalorganic compounds
03/23/1999US5885939 Sputtering a vertically oriented single crystal thin film of yttrium-barium-copper oxide onto horizontally oriented yttrium-barium-copper oxide initially vapor deposited onto single crystal substrate
03/23/1999US5885365 Cleaning using pure water, followed by warming with warm pure water heated to at least about 50 degrees c. and then drying in clean air; used to melt material for pulling a semiconductor single crystal by a czochralski method
03/23/1999US5885344 Non-dash neck method for single crystal silicon growth
03/23/1999US5885071 Outer and inner layers of quartz glass, aluminum-containing intermediate layer; prevention of migration of impurities
03/23/1999US5884864 Vehicle having a ceramic radome affixed thereto by a compliant metallic transition element
03/18/1999WO1999013139A1 SINGLE CRYSTAL SiC AND PROCESS FOR PREPARING THE SAME
03/18/1999WO1999013138A1 Single crystal pull-up apparatus and single crystal pull-up method
03/18/1999DE19840836A1 Vapor phase crystal growth apparatus has a narrow chamber connection
03/18/1999DE19740257A1 Seed crystal holder used in Czochralski single crystal growth process
03/18/1999CA2269709A1 Single crystal sic and process for preparing the same
03/16/1999US5882989 Heating the wafer in a manner to create a temperature gradient across the thickness of the wafer for a period of time.
03/16/1999US5882786 Gemstones formed of silicon carbide with diamond coating
03/16/1999US5882398 Method of manufacturing single crystal of silicon
03/16/1999US5882397 Crystal pulling method
03/16/1999CA2151063C C-axis perovskite thin films grown on silicon dioxide