| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 10/01/1997 | CN1160779A Single crystal fulling apparatus |
| 10/01/1997 | CN1160778A Single crystal growth method |
| 09/30/1997 | US5672430 CVD diamond radiation detector |
| 09/30/1997 | US5672385 Titanium nitride film-MOCVD method incorporating use of tetrakisdialkylaminotitanium as a source gas |
| 09/30/1997 | US5672382 Composite powder particle, composite body and method of preparation |
| 09/24/1997 | CN1160091A Czochralski growing apparatus suppressing growth striation of long large-diameter monocrystalline silicon |
| 09/23/1997 | US5670796 Semiconductor device consisting of a semiconductor material having a deep impurity level |
| 09/18/1997 | WO1997034318A1 Heat-treating method and radiant heating device |
| 09/17/1997 | EP0795898A2 Ferroelectric element and method of producing the same |
| 09/17/1997 | EP0795632A1 Method of manufacturing silicon monocrystal, and seed crystal used in the method |
| 09/17/1997 | EP0795050A1 Process and device for sublimation growing silicon carbide monocrystals |
| 09/17/1997 | EP0795049A1 Epitaxial growth of silicon carbide and resulting silicon carbide structures |
| 09/17/1997 | CN1159491A Method for high-speed gas-phase grown diamond |
| 09/17/1997 | CN1035869C Method for preparation of ball shaped hydroxy-apatite with homogeneous precipitation |
| 09/16/1997 | US5667588 Single crystal pulling apparatus |
| 09/16/1997 | US5667587 Apparatus for growing silicon carbide crystals |
| 09/16/1997 | US5667584 Method for the preparation of a single crystal of silicon with decreased crystal defects |
| 09/12/1997 | WO1997033305A1 Silicon single crystal and process for producing single-crystal silicon thin film |
| 09/11/1997 | DE19702109A1 Recrystallising crystalline component especially thin film semiconductor |
| 09/11/1997 | DE19608885A1 Heating silicon@ substrates in precipitation reactor |
| 09/10/1997 | EP0794561A1 Method of growing a silicon single crystal thin film in vapor phase |
| 09/10/1997 | EP0493609B1 Method and device for manufacturing diamond |
| 09/09/1997 | US5665664 Grain boundary-free crystalline body of manganese-based composite oxide and method for the preparation thereof |
| 09/09/1997 | US5665209 Depositing a refractory metal film containing nitrogen on a substrate and heat treating film |
| 09/09/1997 | US5665159 System for controlling growth of a silicon crystal |
| 09/04/1997 | WO1997032060A1 Process for preparing semiconductor monocrystalline thin film |
| 09/04/1997 | DE19607098A1 Directional solidification of large pure silicon ingot |
| 09/03/1997 | EP0792952A1 Method of manufacturing silicon moncrystal using continuous czochralski method |
| 09/03/1997 | CN1158492A Susceptor and baffle therefor |
| 09/02/1997 | US5662877 Process for forming diamond-like thin film |
| 08/28/1997 | WO1997031140A1 Method of epitaxial growth of monocrystalline '3a' group metal nitrides |
| 08/28/1997 | WO1997031139A1 Metal oxide nanorods |
| 08/28/1997 | WO1997023896A3 Layer sequence with at least one epitaxial, non-c-axis oriented htsc thin film or with a layer of a structure crystallographically comparable to htsc |
| 08/27/1997 | EP0791837A2 Optical magnetic field sensor probe and magneto-optical element |
| 08/27/1997 | EP0791668A2 Apparatus and method for depositing diamond film |
| 08/27/1997 | CN1158131A Metalogranic compounds |
| 08/27/1997 | CN1035730C Imitation emerald |
| 08/26/1997 | US5660881 Increasing the bonding strength with carbide substrate, reducing the cobalt concentration on outer layer by heating to evaporate and etching |
| 08/26/1997 | US5660629 Apparatus for detecting the diameter of a single-crystal silicon |
| 08/24/1997 | CA2176423A1 Apparatus and method for depositing diamond film |
| 08/20/1997 | EP0587772B1 PROCESS FOR MAKING SUPERCONDUCTING Tl-Pb-Sr-Ca-Cu OXIDE FILMS AND DEVICES |
| 08/20/1997 | CN1157641A Diamond-phase carbon tubes and CVD process for their production |
| 08/20/1997 | CN1157477A Method of epitaxial film growth for semiconductor devices |
| 08/20/1997 | CN1157342A Method for preparing molten silicon melt from polycrystalline silicon charge |
| 08/13/1997 | EP0789453A1 Surface acoustic wave device |
| 08/13/1997 | CN1156996A Preparation of metalorganic compounds for growing epitaxial semiconductor layers |
| 08/12/1997 | US5656078 Non-distorting video camera for use with a system for controlling growth of a silicon crystal |
| 08/07/1997 | WO1997028297A1 Growth of colorless silicon carbide crystals |
| 08/07/1997 | DE19703620A1 Single crystal pulling apparatus |
| 08/06/1997 | EP0787838A1 Method of manufacturing single crystal of silicon |
| 08/06/1997 | EP0787836A2 Method for preparing silicon melt from polycrystalline silicon charge |
| 08/06/1997 | EP0787822A1 Process and apparatus for producing SiC by CVD with improved gas consumption |
| 08/06/1997 | EP0787363A1 Multilayered composites and process of manufacture |
| 08/05/1997 | US5653952 Process for synthesizing diamond using combustion method |
| 08/05/1997 | US5653799 Method for controlling growth of a silicon crystal |
| 07/31/1997 | WO1997027350A1 Silicon carbide monocrystal growth |
| 07/30/1997 | EP0632925A4 Crystallographically aligned ferroelectric films usable in memories and method of making. |
| 07/29/1997 | US5652061 Devices comprising films of β-C3 N4 |
| 07/24/1997 | WO1997026393A1 Silicon single crystal with no crystal defect in peripheral part of wafer and process for producing the same |
| 07/24/1997 | WO1997026392A1 Process for producing silicon single crystal reduced in crystal defect and silicon single crystal produced by the process |
| 07/23/1997 | EP0785454A1 Faraday rotator for magneto-optic sensors |
| 07/23/1997 | EP0785298A1 Rapid cooling of cz silicon crystal growth system |
| 07/22/1997 | US5650376 High superconductive critical temperature, neodymium, barium, copper oxide |
| 07/22/1997 | US5650007 Method for production of spinel single crystal filaments |
| 07/17/1997 | WO1997025457A1 PEROVSKITE WITH AO*(ABO3)n LAYER |
| 07/17/1997 | DE19700517A1 Modified Czochralski single crystal growth process |
| 07/17/1997 | DE19700516A1 Czochralski-type single crystal pulling apparatus |
| 07/17/1997 | DE19700403A1 Czochralski-type single crystal pulling apparatus |
| 07/17/1997 | DE19600218A1 Perowskit mit AO*(ABO¶3¶)¶n¶-Schicht Perovskite with AO * (ABO¶3¶) ¶n¶ layer |
| 07/16/1997 | EP0784337A2 Method of removing a carbon-contaminated layer from a silicon substrate surface for subsequent selective silicon epitaxial growth thereon and apparatus for selective silicon epitaxial growth |
| 07/16/1997 | EP0784106A1 Epitaxial growth method |
| 07/16/1997 | EP0681744A4 SUPERCONDUCTING YBa2Cu307-x PRODUCED AT LOW TEMPERATURES. |
| 07/16/1997 | CN1035443C Method for prepn. of potassium titanate crystal whiskers |
| 07/15/1997 | US5648321 Process for manufacturing thin films by multi-layer deposition |
| 07/15/1997 | US5648148 Thermal management of electronic components using synthetic diamond |
| 07/15/1997 | US5648139 Wire drawing dies of polycrystalline CVD diamond with boron dopant atoms |
| 07/15/1997 | US5648114 Chemical vapor deposition process for fabricating layered superlattice materials |
| 07/15/1997 | US5648029 Method of manufacturing inserts preferably for machining of heat resistant materials |
| 07/15/1997 | US5647917 Epitaxy for growing compound semiconductors and an InP substrate for epitaxial growth |
| 07/15/1997 | US5647904 Method for manufacturing superconducting ceramics in a magnetic field |
| 07/10/1997 | DE19700133A1 Verfahren zur Herstellung keramischer Supraleiter-Einkristalle A process for the production of ceramic superconductor single crystals |
| 07/09/1997 | EP0783047A1 Crystal Pulling Apparatus |
| 07/09/1997 | EP0783046A1 Method and apparatus of drawing a single crystal |
| 07/09/1997 | EP0782637A1 Ultra-low pressure metal-organic vapor phase epitaxy (movpe) method of producing ii-vi semiconductor compounds |
| 07/08/1997 | US5645937 At least two diamond layers and at least one interlayer of brazing alloy containing at least one carbide-forming metal |
| 07/05/1997 | CA2194347A1 Method for producing ceramic superconductor single crystals |
| 07/03/1997 | WO1997023896A2 Layer sequence with at least one epitaxial, non-c-axis oriented htsc thin film or with a layer of a structure crystallographically comparable to htsc |
| 07/03/1997 | DE19654717A1 ZnO-Dünnfilmelektrodenstruktur, welche eine mit Sauerstoff dicht gepackte Polykristalloxiddünnfilmschicht verwendet, und deren Herstellungsverfahren ZnO thin film electrode structure used with a close-packed oxygen Polykristalloxiddünnfilmschicht, and their method of preparation |
| 07/02/1997 | EP0781876A1 Method and apparatus for production of single crystal |
| 07/02/1997 | EP0781875A2 Crystal holding apparatus |
| 07/02/1997 | EP0781874A2 Apparatus for producing silicon single crystal |
| 07/02/1997 | EP0781869A1 Method and mechanism for lifting gas flow-guide cylinder of a crystal pulling apparatus |
| 07/02/1997 | EP0781868A2 A single crystal growing apparatus |
| 07/02/1997 | EP0781867A1 Method, mechanism and jig for member handling in a crystal pulling apparatus |
| 07/02/1997 | EP0781866A2 An apparatus and a method for growing a single crystal |
| 07/02/1997 | EP0781865A2 Process and apparatus for producing polycrystalline semiconductors |
| 07/02/1997 | EP0781355A1 Epitaxially layered structure |
| 07/01/1997 | US5643688 Optoelectric articles and a process for producing the same |
| 06/26/1997 | WO1997022738A1 St-cut and at-cut oriented seed bodies for quartz crystal synthesis and method for making the same |
| 06/25/1997 | EP0780913A1 Piezoelectric thin-film element and ink-jet recording head using the same |