Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
09/2012
09/19/2012CN102676167A Zirconium-ytterbium-holmium tri-doped lithium niobate crystal high-upconversion luminescent material and method for preparing same
09/19/2012CN102674812A Oxide material having small optical path temperature dependency
09/19/2012CN102674320A Preparation method for Cu film assisted SiC substrate graphene nano belt based on C injection
09/19/2012CN102674319A Preparation method for Ni film assisted annealing graphene nano belt based on C injection
09/19/2012CN102674318A C injection-based Cu film assisted annealing graphene nanoribbon preparation method
09/19/2012CN102674317A C injection-based Ni film assisted SiC substrate graphene nanoribbon preparation method
09/19/2012CN102671885A Device and method for removing quartz from monocrystalline silicon pot material
09/19/2012CN102671651A Method for preparing mesoporous beta-Ga2O3 nanorod photocatalyst by using PEG (polyethylene glycol) as template
09/13/2012WO2012121154A1 Base, substrate with gallium nitride crystal layer, and process for producing same
09/13/2012WO2012120789A1 Silicon single crystal wafer
09/13/2012WO2012120497A1 Method for surfactant crystal growth of a metal-nonmetal compound
09/13/2012DE112010002568T5 Silicium-einkristall und verfahren zum herstellen desselben Of the same silicon single crystal and method for producing
09/13/2012DE102004004536B4 Verfahren zur Herstellung eines Siliciumeinkristalls A process for producing a silicon single
09/13/2012CA2829064A1 Method for surfactant crystal growth of a metal-nonmetal compound
09/12/2012EP2498293A1 Epitaxial substrate for semiconductor element, semiconductor element, and method for producing epitaxial substrate for semiconductor element
09/12/2012EP2497849A1 Hybrid silicon wafer
09/12/2012EP2497848A1 Hybrid silicon wafer
09/12/2012EP2497847A2 method of processing materials suitable for producing high puritiy silicon
09/12/2012EP2496736A1 Method for preparing single-crystal cubic sesquioxides and uses thereof
09/12/2012CN202430344U Hoisting mechanism for crystal furnace lid
09/12/2012CN202430343U Stickiness alarming device for single crystal furnace for sapphire production
09/12/2012CN202430340U Swing weighing device for spindle of crystal furnace
09/12/2012CN202430339U Rotating and cooling seeding device for sapphire crystal furnace
09/12/2012CN202430338U Helical device of water jacket of gem furnace
09/12/2012CN202430337U Water circulating device for crystal furnace electrode
09/12/2012CN202430336U Vacuum system of gem furnace
09/12/2012CN202430335U High-purity zirconia thermal-insulation wall for gem furnace thermal field
09/12/2012CN202430334U In-furnace observation device for gemstone furnace
09/12/2012CN202430333U Gem furnace electrode sealing device
09/12/2012CN202430332U Graphite crucible for growing silicon carbide single crystal by utilizing physical vapor deposition method
09/12/2012CN202430331U Gem furnace stand column tilting mechanism
09/12/2012CN202430329U Mechanical damping device of single crystal furnace for growing large-size sapphire by kyropoulos method
09/12/2012CN202430327U Doper for growing doped direct-pull crystals
09/12/2012CN202430322U Gem furnace
09/12/2012CN202430321U Pulling device for crystal furnace
09/12/2012CN202430320U Gem furnace rotating, lifting and sealing device
09/12/2012CN202430317U Fastening device enabling sealing of upper main chamber and lower main chamber of ingot furnace
09/12/2012CN202430316U Insulation device for synthetic quartz crystal growth equipment
09/12/2012CN102668109A Method for manufacturing a polycrystalline silicon block material, method for manufacturing a polycrystalline silicon wafer, and polycrystalline silicon block material
09/12/2012CN102666945A Group iii nitride crystal substrate, group iii nitride crystal substrate having epitaxial layer, and semiconductor device and method for producing the same
09/12/2012CN102666944A Synthetic cvd diamond
09/12/2012CN102665968A Cage nanostructures and preparation thereof
09/12/2012CN102660776A Method for preparing black silicon through Mn ion catalysis and corrosion
09/12/2012CN102660774A Boric acid oxygen cadmium ytterbium as nonlinear optical crystal
09/12/2012CN102660773A Non-linear optical crystal boric acid cadmium yttrium oxide
09/12/2012CN102660772A Nonlinear optics crystal boric acid of oxygen, cadmium and lutetium
09/12/2012CN102660771A Boric acid oxygen cadmium gadolinium as nonlinear optical crystal
09/12/2012CN102660770A Preparation method for ZnMn2O4 nanorod by using alpha-MnO2 nanorod template method
09/12/2012CN102660769A Method for preparing TiO2 nano monocrystals with controllable forms and exposed active surfaces
09/12/2012CN102660766A Preparation method of Y2Si2O7 whisker
09/12/2012CN102658362A Water cooling copper crucible directional freezing method for superhigh-temperature Nb-Si alloy
09/11/2012US8262795 Method and apparatus for the production of crystalline silicon substrates
09/06/2012DE112009003570T5 Silicium for n-Typ Solarzellen und ein Verfahren zur Herstellung von mit Phosphor dotiertem Silicium Silicon for n-type solar cell and a method for the preparation of phosphorus-doped silicon
09/05/2012EP2495750A1 Silicon carbide substrate production method and silicon carbide substrate
09/05/2012EP2495358A1 Methods of forming III/V semiconductor materials, and semiconductor structures formed using such methods
09/05/2012EP2494100A1 Method of making an article of semiconducting material
09/05/2012CN202415748U Cast ingot thermal field device
09/05/2012CN202415747U Graphite protective plate for ingot furnace
09/05/2012CN202415746U Ingot furnace
09/05/2012CN202415745U Polycrystalline silicon ingot furnace
09/05/2012CN202415744U Graphite crucible of polycrystalline silicon ingot casting furnace
09/05/2012CN202415743U Lifting limiting device of lower furnace body of polycrystalline silicon ingot furnace
09/05/2012CN202415742U Heat-insulation cage lifting device of polycrystalline silicon ingot casting furnace
09/05/2012CN202415741U Synchronous lifting device for lower furnace body of polycrystalline silicon ingot furnace
09/05/2012CN202415740U Polycrystalline silicon ingot furnace
09/05/2012CN202415738U Gas inlet device of silicon epitaxy equipment
09/05/2012CN1623894B High purity carbonaceous material and ceramic coated high purity carbonaceous material
09/05/2012CN102656298A Method and device for manufacturing self-supporting gallium nitride (GaN) substrate
09/05/2012CN102656297A SiC epitaxial wafer and method for manufacturing same
09/05/2012CN102656296A Method for treating diamond material and product obtained
09/05/2012CN102653886A Protective cover
09/05/2012CN102653885A Method for preparing structured graphene on 3C-SiC substrate
09/05/2012CN102653883A Substrate processing apparatus, and method of manufacturing substrate
09/05/2012CN102653882A Charging method and device of straight-pull silicon single crystals
09/05/2012CN102653881A Method for casting large-grained silicon ingot
09/05/2012CN102653880A Casting device
09/05/2012CN102653415A Solid-phase preparation method of titanium dioxide nano material
09/05/2012CN102154701B Method for preparing manganese molybdate/cobalt molybdate hierarchical heterostructure nanowires
09/05/2012CN102140689B Method for growing sapphire crystal
09/05/2012CN102130068B Alloy-type bonding wire with composite plating on surface
09/05/2012CN102017079B Process for producing SiCAlN base material, process for producing epitaxial wafer, SiCAlN base material, and epitaxial wafer
09/05/2012CN102002757B Method for controlling bismuth-sulfide polycrystalline thermoelectric material texture
09/05/2012CN101781637B Human 5,10-methenyltetrahydrofolate and its compound crystallization methods, crystals and application thereof
09/05/2012CN101481821B Novel technology for growth of yttrium-aluminum garnet crystal and equipment thereof
09/05/2012CN101473075B Method for growing A1xGa1-xN crystal, and A1xGa1-xN crystal substrate
09/05/2012CN101457403B Green synthetic method of controllable dimension semi-conductor nano cluster and nanocrystalline
09/05/2012CN101457400B Method for preparing neodymium doped Na2La4(MoO4)7 laser crystal
09/05/2012CN101378989B High-pressure fluidized bed reactor for preparing granular polycrystalline silicon
09/05/2012CN101243011B Method of producing group 13 metal nitride crystal, method for manufacturing semiconductor device, and solution and melt used in those methods
09/05/2012CN101070621B Low defect density, self-interstitial dominated silicon
09/04/2012US8258603 Solid-state high-luminance far ultraviolet light emitting element including highly pure hexagonal boron nitride single crystal
09/04/2012US8257493 Photonic crystal, conjugated polymers suitable for photonic crystal, and a method for synthesizing conjugated polymers
08/2012
08/30/2012WO2012115234A1 Scintillator for neutron detection, and neutron radiation detector
08/30/2012WO2012114659A1 Method of manufacturing silicon substrate and silicon substrate
08/30/2012WO2012114375A1 Method for manufacturing n-type silicon single crystal, and phosphorus-doped n-type silicon single crystal
08/30/2012WO2012094664A3 Colloidal semiconductor nanocrystals having 1-dimensional quantum confinement and methods of making the same
08/30/2012DE112009003601T5 Obere Heizeinreichtung zur Verwendung bei der Herstellung eines Einkristalls,Einkristall-Herstellungsanlage und Verfahren zur Herstellung elnes Einkristalls Upper Heizeinreichtung for use in producing a single crystal, single crystal manufacturing equipment and methods for making single crystal ELNES
08/30/2012DE102010025842B4 Vorrichtung und Verfahren zur Kontrolle der Kristallisation Apparatus and method for controlling the crystallization
08/29/2012EP2492379A1 Single crystal, process for producing same, optical isolator, and optical processor using same
08/29/2012EP2492378A1 Oxide and magneto-optical device
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