Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
12/2012
12/05/2012CN202576649U Cooling device
12/05/2012CN202576648U Ingot furnace for preparing low-carbon and low-oxygen silicon ingot
12/05/2012CN202576647U Polycrystalline silicon ingot charging chamber
12/05/2012CN202576646U Non-polar InN film grown on LiGaO2 substrate
12/05/2012CN202576644U Sapphire crystal growth pulling device by utilizing Kyropoulos method
12/05/2012CN202576643U Die used for growing hemispherical sapphire by EFG (Edge-defined Film-fed crystal Growth) method
12/05/2012CN202576640U Single crystal furnace for sapphires
12/05/2012CN102808221A Growth technology for growing high-quality GaN crystal material on sapphire patterned substrate
12/05/2012CN102808220A Nonlinear optical crystal Bi2I4O13 and preparation method as well as use thereof
12/05/2012CN102808219A Low-dislocation monocrystalline silicon stick
12/05/2012CN102808218A Material-loading polycrystalline furnace
12/05/2012CN102808216A Float-zone monocrystalline silicon production process and float-zone thermal field
12/05/2012CN102808215A Preparation method of large-dimension multi-element rare earth boride (Ce0.9Pr0.1)B6 single crystal
12/05/2012CN102808214A Combined-type protection plate for ingot casting crucible
12/05/2012CN102808213A Preparation method for large-area crystal seeds of similar single crystals produced by casting method
12/05/2012CN102808212A Method for preparing n type pseudo ternary Er-doped thermoelectric material by using mechanical alloying hot pressing method
12/05/2012CN102808113A Process for preparing nickel-base superalloy
12/05/2012CN102432268B Method for sintering alumina powder into alumina lump material used for sapphire crystal production through flame fusion technique
12/05/2012CN102226298B Preparation method of metal oxide nanowires
12/05/2012CN102220634B Method to raise production efficiency of czochralski silicon mono-crystal
12/05/2012CN102215614B Graphite electrode and polycrystalline ingot furnace
12/05/2012CN102115912B Method and device for preparing Mg-doped ZnO nanowire array
12/05/2012CN102061520B Method for preparing unary or binary patterning colloidal photonic crystal
12/05/2012CN102051679B Hot door and polycrystalline ingot furnace
12/05/2012CN101970351B Apparatus including a plasma torch for purifying a semiconductor material
12/05/2012CN101965418B Quartz crucible for pulling silicon single crystal and method for manufacturing the quartz crucible
12/05/2012CN101925696B Method for manufacturing iii metal nitride single crystal
12/05/2012CN101743091B Polycrystalline diamond composites
12/05/2012CN101514488B A silicon chip for growing silicon polycrystal crystal rod and a method for preparing the same
12/05/2012CN101360852B Process for producing silicon single crystal wafer
12/05/2012CN101307496B Gadolinium illinium scandium gallium garnet crystal GYSGG and its smelt method crystal growth method
12/04/2012US8323403 SOI wafer and method for producing it
11/2012
11/29/2012WO2012161894A1 Nanowire preparation methods, compositions, and articles
11/29/2012WO2012161893A1 Metal ion catalysis of metal ion reduction, methods, compositions, and articles
11/29/2012WO2012161892A1 Nanowire preparation methods, compositions, and articles
11/29/2012WO2012161851A1 Novel solvents for metal ion reduction methods, compositions, and articles
11/29/2012WO2012161524A2 Apparatus for fabricating ingot
11/29/2012WO2012161265A1 Method and apparatus for producing semiconductor thin film crystal
11/29/2012WO2012161233A1 Oxide superconducting thin film
11/29/2012WO2012160872A1 Silicon carbide substrate, silicon carbide ingot and manufacturing methods therefor
11/29/2012WO2012160781A1 Method for producing gaas single crystal and gaas single crystal wafer
11/29/2012WO2012160306A1 Process for the growth of a crystalline solid, associated crystalline solid and device
11/29/2012WO2012159896A1 Diamond sensors, detectors, and quantum devices
11/29/2012DE10227141B4 Verfahren zur Herstellung eines Siliziumwafers mit einer denudierten Zone und damit hergestellter Siliziumwafer A method for producing a silicon wafer having a denuded zone and thus prepared silicon wafer
11/29/2012DE102010028173B4 Verfahren zur Herstellung von Kristallblöcken hoher Reinheit A process for producing high purity crystal blocks
11/29/2012DE102009003296B4 Herstellungsverfahren für einen N-leitenden Galliumnitrid-basierten Verbindungshalbleiter Manufacturing method of an n-type gallium nitride-based compound semiconductor
11/28/2012EP2527500A1 Method for manufacturing epitaxial crystal substrate
11/28/2012EP2526220A1 Cvd single crystal diamond material
11/28/2012EP2526120A1 Dried nanocrystalline cellulose of controllable dispersibility and method therefor
11/28/2012CN202558973U Seed rod of sapphire monocrystal crystal-bar growth furnace
11/28/2012CN202558972U Growing chamber used for growing sapphire single-crystal crystal bar
11/28/2012CN202558970U Single crystal like silicon ingot furnace
11/28/2012CN202558969U Foundry furnace for silicon ingots with low impurity content
11/28/2012CN202558968U Ingot furnace provided with novel guard plate and used for preparation of low-carbon hypoxia polysilicon
11/28/2012CN202558967U Ingot furnace provided with novel cover plate and used for preparing high-quality polycrystalline silicon with low carbon and low oxygen
11/28/2012CN202558966U Crucible for polysilicon ingot loading
11/28/2012CN202558965U Furnace body of kyropoulos method growth furnace
11/28/2012CN202558964U Electrode device for sapphire growth monocrystal crystal bar
11/28/2012CN202558962U Single crystal silicon production quartz crucible adopting Czochralski method
11/28/2012CN202558958U Novel gas diversion control device
11/28/2012CN202556603U To-be-cut silicon bar
11/28/2012CN102803583A Method for growing single crystal of group III metal nitride and reaction vessel for use in same
11/28/2012CN102803582A Oxide and magneto-optical device
11/28/2012CN102803580A Molecular beam epitaxy apparatus for producing wafers of semiconductor material
11/28/2012CN102798271A Polysilicon material drying oven
11/28/2012CN102797039A Device and method for producing ultrapure polysilicon ingot by electromagnetic method
11/28/2012CN102797038A Mg-Yb-Er doped lithium niobate laser crystals and preparation method thereof
11/28/2012CN102797037A Polycrystalline silicon ingot, manufacturing method thereof and solar cell
11/28/2012CN102797036A Polycrystalline silicon ingot, manufacturing method thereof and solar cell
11/28/2012CN102797035A Polycrystalline silicon ingot and preparation method thereof and solar cell
11/28/2012CN102797034A Support boat for GaN material epitaxy industrialization
11/28/2012CN102797033A Seeding process controlling method for growing large-size sapphire crystal with soaked-growth method
11/28/2012CN102797032A Method and apparatus for growing semiconductor crystals with rigid support, carbon doping and resistivity control and thermal gradient control
11/28/2012CN102797031A Preparation method of pyrite-type ferrous disulfide nanoscale single-crystal semiconductor material
11/28/2012CN102797030A Gypsum whisker preparation method
11/28/2012CN102796988A Method for preparing highly ordered CuInS2 epitaxial film by using a sputtering method
11/28/2012CN102794101A Technology for co-producing gypsum crystal whisker by using imestone desulfuration
11/28/2012CN102794100A Technology of desulphurization by regenerated ammonia with combined production of calcium sulfate whisker
11/28/2012CN102234843B Ga-Te-based thermoelectric semiconductor with superstructure and preparation method thereof
11/28/2012CN102226991B Copper palladium alloy monocrystal bonding wire and manufacturing method thereof
11/28/2012CN102212878B Method for preparing acicular and fungiform Bi2O3 nano materials
11/28/2012CN102205391B Device and method for manufacturing spiral grain selection device for high-temperature alloy single crystal growth
11/28/2012CN102199372B Graphene-La2Ti2O7/zinc-aluminum-zirconium corrosion resisting coating for polycrystalline silicon ingot casting furnace
11/28/2012CN102174711B Method using high thermal stability film as MTG (melt textured growth) seed crystal to prepare high temperature superconducting material
11/28/2012CN102134752B Preparation method of organic eutectic ferroelectric and organic eutectic ferroelectric
11/28/2012CN102134738B Preparation method of oxalic acid hydroxylamine vanadium coordination compound crystalloid with bioactivity
11/28/2012CN101962807B Equipment and method for producing tetrapod-shaped zinc oxide whiskers
11/28/2012CN101831696B Silicon single crystal growth method
11/28/2012CN101275279B Piezo crystal having four-lattice structure
11/28/2012CN101089242B Doped neodymium lithium lanthanum barium tungstate laser crystal and its preparation method and usage
11/27/2012US8317921 In situ growth of oxide and silicon layers
11/27/2012US8317919 System for continuous growing of monocrystalline silicon
11/22/2012WO2012157670A1 Silicon carbide substrate
11/22/2012WO2012157654A1 Sic single crystal, sic wafer, and semiconductor device
11/22/2012WO2012157369A1 Thermoelectric conversion structure and production method thereof
11/22/2012WO2012157368A1 Thermoelectric conversion structure and production method thereof
11/22/2012WO2012157293A1 Silicon carbide powder and method for producing silicon carbide powder
11/22/2012WO2012156300A1 Method for producing a two-dimensional lattice structure having edge dislocations with a controlled period
11/22/2012WO2012155273A1 Semiconductor formation by lateral diffusion liquid phase epitaxy
11/22/2012WO2012099343A3 Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire sngle crystal ingot, sapphire sngle crystal ingot, and sapphire wafer
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