| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/05/2015 | WO2015031461A1 Seed for metal dichalcogenide growth by chemical vapor deposition |
| 03/05/2015 | US20150064098 Process for producing two-dimensional nanomaterials |
| 03/05/2015 | US20150059978 Cluster apparatus for treating substrate |
| 03/05/2015 | US20150059647 Apparatus for Growing Diamonds by Microwave Plasma Chemical Vapour Deposition Process and Substrate Stage Used Therein |
| 03/04/2015 | EP2841796A1 Methods for applying graphene coatings and substrates with such coatings |
| 02/26/2015 | WO2015024762A1 Substrate treatment device |
| 02/26/2015 | US20150054134 Silicon wafer and manufacturing method thereof |
| 02/26/2015 | US20150053996 Layered substrate with a miscut angle comprising a silicon single crystal substrate and a group-iii nitride single crystal layer |
| 02/25/2015 | EP2839055A1 Vapor deposition apparatus and method associated |
| 02/24/2015 | US8963166 III nitride crystal substrate and light-emitting device |
| 02/24/2015 | US8962458 Methods of growing nitride semiconductors and methods of manufacturing nitride semiconductor substrates |
| 02/24/2015 | US8962365 Method of manufacturing GaN-based film and composite substrate used therefor |
| 02/24/2015 | US8962137 Branched nanowire and method for fabrication of the same |
| 02/19/2015 | WO2015023709A2 Silicon wafers with p-n junctions by epitaxial deposition and devices fabricated therefrom |
| 02/19/2015 | US20150050482 Graphene synthesis by suppressing evaporative substrate loss during low pressure chemical vapor deposition |
| 02/19/2015 | US20150050471 Method for producing iii-n templates and the reprocessing thereof and iii-n template |
| 02/19/2015 | US20150049788 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor |
| 02/19/2015 | US20150047566 Apparatus for impurity layered epitaxy |
| 02/19/2015 | US20150047554 Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon |
| 02/19/2015 | DE102006005875B4 Halbleitersubstrat mit Gettereffekt, Herstellungsverfahren und Verwendung Semiconductor substrate having gettering, production method and use |
| 02/18/2015 | EP2837714A1 Method for producing a textured layer of spinel iron oxide |
| 02/18/2015 | EP2837020A1 Sic substrate with sic epitaxial film |
| 02/17/2015 | US8957433 Sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element |
| 02/17/2015 | US8956960 Method for stress reduced manufacturing semiconductor devices |
| 02/17/2015 | US8956952 Multilayer substrate structure and method of manufacturing the same |
| 02/12/2015 | WO2015020161A1 SELF-STANDING GaN SUBSTRATE, GaN CRYSTAL, METHOD FOR PRODUCING GaN SINGLE CRYSTAL, AND METHOD FOR PRODUCING SEMICONDUCTOR DEVICE |
| 02/12/2015 | WO2015018260A1 Epitaxial structure of iii-group nitride and growth method therefor |
| 02/12/2015 | US20150042445 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor |
| 02/12/2015 | US20150040979 Silicon Wafers with p-n Junctions by Epitaxial Deposition and Devices Fabricated Therefrom |
| 02/12/2015 | US20150040822 Method and apparatus for precleaning a substrate surface prior to epitaxial growth |
| 02/11/2015 | CN204151456U 一种制备半导体外延片的mocvd反应装置 Mocvd reaction apparatus for preparing a semiconductor wafer |
| 02/11/2015 | CN104350185A 用于沉积系统的气体注入部件及相关方法 Components and associated methods for depositing gas injection system |
| 02/11/2015 | CN104347761A 晶体质量可控的氮化镓薄膜外延生长方法 Controllable crystal quality GaN epitaxial thin film growth method |
| 02/11/2015 | CN104342751A 反应腔和mocvd设备 Reaction chamber and mocvd equipment |
| 02/11/2015 | CN102586869B 三维石墨烯管及其制备方法 Dimensional graphene tube and its preparation method |
| 02/10/2015 | US8952494 Group III nitride semiconductor substrate having a sulfide in a surface layer |
| 02/10/2015 | US8951353 Manufacturing method and apparatus for semiconductor device |
| 02/05/2015 | WO2015014747A1 Support for deposition of polycrystalline silicon |
| 02/05/2015 | WO2015014562A1 Diamond coating and method for depositing such a coating |
| 02/05/2015 | WO2015014069A1 Reaction chamber and mocvd device |
| 02/05/2015 | US20150036723 Metal nitride material for thermistor, method for producing same, and film type thermistor sensor |
| 02/04/2015 | EP2832900A1 Laminated substate of silicon single crystal and group iii nitride single crystal with off angle |
| 02/04/2015 | EP2832899A1 Diamond coating and method for depositing such a coating |
| 02/04/2015 | EP2831315A1 Process for producing two-dimensional nanomaterials |
| 02/04/2015 | CN104334919A 用于涂敷石墨烯涂层的方法和具有这种涂层的基材 Methods for applying the graphene coating and the substrate having such a coating |
| 02/04/2015 | CN104334775A 沉积系统的气体注入组件、包括这种组件的沉积系统和相关方法 Gas injection assembly deposition system, deposition system comprising such an assembly and related methods |
| 02/04/2015 | CN104334495A 生长均匀、大规模的多层石墨烯膜的方法 Growth uniform, large-scale multi-graphene film method |
| 02/04/2015 | CN104328488A 一种制备高质量氮化物的方法 A method of preparing high-quality nitride |
| 02/03/2015 | US8946774 Gallium nitride semiconductor substrate |
| 02/03/2015 | US8946772 Substrate for epitaxial growth, process for manufacturing GaN-based semiconductor film, GaN-based semiconductor film, process for manufacturing GaN-based semiconductor light emitting element and GaN-based semiconductor light emitting element |
| 02/03/2015 | US8946723 Epitaxial substrate and method for manufacturing epitaxial substrate |
| 02/03/2015 | US8946065 Method of forming seed layer and method of forming silicon-containing thin film |
| 02/03/2015 | US8946062 Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same |
| 02/03/2015 | US8945305 Methods of selectively forming a material using parylene coating |
| 02/03/2015 | US8945304 Ultrahigh vacuum process for the deposition of nanotubes and nanowires |
| 02/03/2015 | US8945302 Method for crystal growth of a metal-nonmetal compound using a metallophobic-metallophilic surfactant and a thin metal wetting layer |
| 01/29/2015 | WO2015012403A1 Pretreatment method for base substrate, and method for manufacturing laminate using pretreated base substrate |
| 01/29/2015 | WO2015012257A1 Continuous-distillation-type trichlorosilane vaporization supply device and continuous-distillation-type trichlorosilane gas vaporization method |
| 01/29/2015 | WO2015012190A1 METHOD FOR PRODUCING SiC SUBSTRATES |
| 01/29/2015 | US20150030846 Crystal film, method for manufacturing crystal film, vapor deposition apparatus and multi-chamber apparatus |
| 01/29/2015 | US20150028286 Method for growing germanium/silicon-germanium superlattice |
| 01/29/2015 | US20150027523 Nanostructures and Methods for Manufacturing the Same |
| 01/28/2015 | CN102953118B 一种单晶石墨烯pn结及其制备方法 Single crystal graphene pn junction and its preparation method |
| 01/28/2015 | CN102534769B 在图形衬底上生长氮化镓外延结构的方法 GaN grown on a substrate in a graphical method of epitaxial structure |
| 01/28/2015 | CN101956232B 多晶硅的制造方法、多晶硅的制造装置、和多晶硅 Method for producing polycrystalline silicon, polycrystalline silicon manufacturing apparatus, and polysilicon |
| 01/27/2015 | US8940267 Method of purifying nanodiamond powder and purified nanodiamond powder |
| 01/27/2015 | US8940266 Large diamond crystal substrates and methods for producing the same |
| 01/27/2015 | US8940093 Method of controlling an epitaxial growth process in an epitaxial reactor |
| 01/22/2015 | WO2015007466A1 Method for depositing a piezoelectric film containing ain, and a piezoelectric film containing ain |
| 01/22/2015 | US20150024223 Monolithic integrated lattice mismatched crystal template and preparation method thereof |
| 01/21/2015 | CN104302816A 具有可调节属性的纳米线的高吞吐量连续气相合成 High throughput continuous gas phase synthesis with an adjustable attributes nanowires |
| 01/21/2015 | CN104294354A 一种GaN 外延工艺方法 An epitaxial process for GaN |
| 01/21/2015 | CN103228827B 外延碳化硅单晶基板的制造方法 Manufacture of epitaxial SiC single crystal substrate |
| 01/20/2015 | US8937335 Gallium nitride devices with aluminum nitride intermediate layer |
| 01/20/2015 | US8936774 Optical quality diamond material |
| 01/20/2015 | US8936681 Method for making epitaxial structure using carbon nanotube mask |
| 01/15/2015 | WO2015005202A1 Semiconductor device and manufacturing method for same, crystal, and manufacturing method for same |
| 01/15/2015 | WO2015005064A1 Method for producing silicon carbide semiconductor device, and silicon carbide semiconductor device |
| 01/15/2015 | WO2015003609A1 Composite substrate with isolation layer and manufacturing method thereof |
| 01/15/2015 | US20150013604 Chamber pressure control apparatus for near atmospheric epitaxial growth system |
| 01/15/2015 | US20150013595 Silicon carbide crystal growth in a cvd reactor using chlorinated chemistry |
| 01/15/2015 | US20150013594 Vapor phase growth apparatus and vapor phase growth method |
| 01/15/2015 | US20150013593 Thin film formation |
| 01/14/2015 | EP2824223A1 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device |
| 01/14/2015 | CN102691100B 工艺腔室装置和具有该工艺腔室装置的外延设备 An epitaxial process chamber means and the processing chamber apparatus having means |
| 01/13/2015 | US8933538 Oxygen-doped gallium nitride single crystal substrate |
| 01/13/2015 | US8932405 Apparatus for low-temperature epitaxy on a plurality semiconductor substrates |
| 01/13/2015 | CA2795825C Polycrystalline silicon |
| 01/08/2015 | US20150011076 Reactor gas panel common exhaust |
| 01/08/2015 | US20150007766 Vapor phase growth apparatus and vapor phase growth method |
| 01/07/2015 | EP2821532A1 Method for processing group-iii nitride substrate and method for manufacturing epitaxial substrate |
| 01/07/2015 | CN104264219A 一种基区缓变掺杂碳化硅薄膜外延制备方法 A thin film of silicon carbide epitaxial base slow preparation Doping |
| 01/07/2015 | CN104264218A 一种用于氢化物气相外延(hvpe)生长的加热装置 A heating apparatus hydride vapor phase epitaxy (hvpe) for Growth |
| 01/07/2015 | CN104264217A 一种制备半导体外延片的mocvd反应装置 Mocvd reaction apparatus for preparing a semiconductor wafer |
| 01/07/2015 | CN102427971B 高效外延化学气相沉积(cvd)反应器 Efficient epitaxial chemical vapor deposition (cvd) Reactor |
| 01/07/2015 | CN102296362B 单结晶金刚石生长用基体材料以及单结晶金刚石基板的制造方法 Growth of single crystal diamond with a matrix material and a method for producing the single crystal diamond substrate |
| 01/06/2015 | US8928035 Gallium nitride devices with gallium nitride alloy intermediate layer |
| 01/06/2015 | US8928034 Gallium nitride devices with aluminum nitride alloy intermediate layer |
| 01/06/2015 | US8928006 Substrate structure, method of forming the substrate structure and chip comprising the substrate structure |
| 01/06/2015 | US8928004 Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same |