| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/01/1994 | US5290392 Single crystal diamond wafer fabrication |
| 02/24/1994 | DE4325331A1 Gallium arsenide phosphide epitaxial disc - having layer system of gallium arsenide phosphide and used to mfr. light emitting diodes |
| 02/22/1994 | US5288658 Process for the formation of an amorphous silicon deposited film with intermittent irradiation of inert gas plasma |
| 02/22/1994 | US5288556 Machines; vehicles |
| 02/22/1994 | US5288364 Silicon epitaxial reactor and control method |
| 02/22/1994 | US5288326 Apparatus for continuous growth of SiC single crystal from SiC synthesized in a vapor phase without using graphite crucible |
| 02/16/1994 | EP0371145B1 Process for vapor-phase synthesis of diamond |
| 02/15/1994 | US5286524 Method for producing CVD diamond film substantially free of thermal stress-induced cracks |
| 02/15/1994 | US5286523 Chaning positions which are disposed in the direction of gas flow in reaction vessel until optimal surface processing conditions are attained |
| 02/15/1994 | US5286519 Fluid dispersion head |
| 02/15/1994 | US5286334 Nonselective germanium deposition by UHV/CVD |
| 02/09/1994 | EP0386190B1 Elemental mercury source for metal-organic chemical vapor deposition |
| 02/03/1994 | WO1994002665A1 Semimetal-semiconductor heterostructures and multilayers |
| 02/03/1994 | WO1993021364A3 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers |
| 02/03/1994 | CA2140450A1 Semimetal-semiconductor heterostructures and multilayers |
| 02/02/1994 | EP0581254A1 Method of forming single-crystalline thin film |
| 01/26/1994 | EP0580019A1 Oriented polycrystalline thin films of transition metal chalcogenides |
| 01/25/1994 | US5281299 Method for manufacturing a crystal with a lattice parameter gradient |
| 01/25/1994 | US5281283 Substrate has non-nucleation surface and amorphous nucleation surface with different nucleation densities adjacent to each other |
| 01/25/1994 | US5281274 Vapor deposition of silicon, germanium, tin, lead and diamond films, chemical reactors |
| 01/20/1994 | WO1994001438A1 Process for the preparation of trialkyl compounds of group 3a metals |
| 01/20/1994 | WO1994001363A1 Production of silicon carbide whiskers |
| 01/18/1994 | US5279986 Method for epitaxial deposition |
| 01/18/1994 | US5279809 Mixing zinc-tin oxide; heating to oxidize |
| 01/18/1994 | US5279701 Method for the growth of silicon carbide single crystals |
| 01/13/1994 | DE4220827A1 Anlage zur Behandlung von Objekten unter Reinluftraum-Bedingungen Plant for the treatment of objects under clean air room conditions |
| 01/12/1994 | EP0578254A2 Epaxial crowth method of a carbon doped A III - B V compound semiconductor layer |
| 01/12/1994 | EP0578232A1 Diamond synthetic method |
| 01/11/1994 | US5278092 Method of forming crystal semiconductor film |
| 01/11/1994 | US5277940 Method for treating diamonds to produce bondable diamonds for depositing same on a substrate |
| 01/11/1994 | US5277747 Extraction of spatially varying dielectric function from ellipsometric data |
| 01/11/1994 | US5277215 Method for supplying and discharging gas to and from semiconductor manufacturing equipment and system for executing the same |
| 01/06/1994 | WO1994000622A1 Installation for processing objects under clean-room conditions |
| 01/04/1994 | US5276503 Method and apparatus for gas phase synthesis |
| 01/04/1994 | US5275976 Process chamber purge module for semiconductor processing equipment |
| 01/04/1994 | US5275966 Low temperature process for producing antimony-containing semiconductor materials |
| 01/04/1994 | US5275686 Radial epitaxial reactor for multiple wafer growth |
| 12/28/1993 | US5273932 Heating the substrate and using a laser of wavelength less than photon energy required for decomposing the gallium and indium organometallic compounds to effect a difference in growth rate |
| 12/28/1993 | US5273931 Method of growing epitaxial layers of N-doped II-VI semiconductor compounds |
| 12/28/1993 | US5273911 Depositing a semiconductor layer on an induction-heated flaky graphite substrate hardened by rolling at 1000 degrees C. |
| 12/28/1993 | US5273778 Simultaneously decomposing a graphite source and a metal halide or organometal for chemical vapor deposition onto a substrate |
| 12/28/1993 | US5273618 Cover of a combustion flame having an edge forming a gap with the base to allow for another flame to prevent oxygen from mingling with the combustion flame |
| 12/28/1993 | US5273616 Method of producing sheets of crystalline material and devices made therefrom |
| 12/23/1993 | WO1993025725A1 Process for depositing smooth polycrystalline layers |
| 12/23/1993 | DE4219773A1 Alpha-silicon nitride filament prodn. with larger aspect ratio than whisker - by reacting volatile silane with ammonia in hydrogen over transition metal catalyst, giving quasi-mono-crystalline filament |
| 12/22/1993 | EP0574935A1 Apparatus made of silica for semiconductor device fabrication |
| 12/22/1993 | EP0574807A1 Chemical vapor deposition of metal oxide films |
| 12/22/1993 | EP0574806A1 Chemical vapor deposition of metal oxide films from reaction product precursors |
| 12/22/1993 | CN1079717A Preparation method for a-alumine |
| 12/22/1993 | CN1079716A a-alumine |
| 12/22/1993 | CN1079715A a-alumine |
| 12/21/1993 | US5271957 Chemical vapor deposition of niobium and tantalum oxide films |
| 12/21/1993 | US5271264 Method of in-situ particle monitoring in vacuum systems |
| 12/21/1993 | CA1325371C Reagent source for molecular beam epitaxy |
| 12/16/1993 | DE4319233A1 Gallium arsenide phosphide epitaxial wafer - has low probability of crack formation during LED mfr. |
| 12/16/1993 | DE4219436A1 Verfahren zur Abscheidung glatter polykristalliner Schichten Process for the deposition of smooth polycrystalline layers |
| 12/15/1993 | EP0574263A1 CVD diamond films |
| 12/15/1993 | EP0573943A1 Method for the manufacture of large single crystals |
| 12/15/1993 | EP0573707A2 Apparatus for gas source molecular beam epitaxy |
| 12/15/1993 | EP0573424A1 Coreless refractory fibres. |
| 12/14/1993 | US5270077 Method for producing flat CVD diamond film |
| 12/14/1993 | US5270029 Cyclotron resonance chemical vapor deposition |
| 12/14/1993 | US5270028 Diamond and its preparation by chemical vapor deposition method |
| 12/14/1993 | US5269876 Vapor deposition of silicon crystal |
| 12/14/1993 | CA1325160C Apparatus for producing compound semiconductor |
| 12/09/1993 | WO1993024682A1 α-ALUMINA |
| 12/09/1993 | WO1993024681A1 α-ALUMINA |
| 12/09/1993 | WO1993024680A1 PROCESS FOR PRODUCING α-ALUMINA |
| 12/09/1993 | CA2137249A1 .alpha.-alumina |
| 12/09/1993 | CA2137248A1 .alpha.-alumina |
| 12/09/1993 | CA2137247A1 Process for producing .alpha.-alumina |
| 12/08/1993 | EP0573269A2 Method of preparing compound semiconductor |
| 12/07/1993 | US5268201 Heating methane using tantalum filament |
| 12/07/1993 | US5268034 Fluid dispersion head for CVD appratus |
| 12/02/1993 | DE4310941A1 Vacuum treatment chamber - with a low voltage discharge with arcing on treatment chamber walls prevented |
| 11/30/1993 | US5266355 Chemical vapor deposition of metal oxide films |
| 11/30/1993 | US5266127 Epitaxial process for III-V compound semiconductor |
| 11/23/1993 | US5265118 Silicon carbide whisker production apparatus |
| 11/23/1993 | US5264071 Separation from substrate by controlled cooling, intermediate release layer, polishing support |
| 11/23/1993 | US5264070 Method of growth-orientation of a crystal on a device using an oriented seed layer |
| 11/16/1993 | US5262392 Method for patterning metallo-organic percursor film and method for producing a patterned ceramic film and film products |
| 11/16/1993 | US5262348 Method for the growing of heteroepitaxial layers within a confinement space |
| 11/16/1993 | US5261962 Plasma-chemical vapor-phase epitaxy system comprising a planar antenna |
| 11/16/1993 | US5261960 Reaction chambers for CVD systems |
| 11/16/1993 | US5261959 Nucleation, gasification |
| 11/11/1993 | WO1993022482A1 Growth of diamond crystals |
| 11/11/1993 | WO1993022473A1 Use of metal-organic compounds for depositing the element on substrates |
| 11/11/1993 | WO1993022472A1 Use of organo-metallic compounds for precipitating metals on substrates |
| 11/09/1993 | US5259918 Heteroepitaxial growth of germanium on silicon by UHV/CVD |
| 11/04/1993 | DE4214224A1 Verwendung von elementorganischen verbindungen zur abscheidung des elementes auf substraten Use of element-organic compounds for the deposition of the element on substrates |
| 11/02/1993 | US5258206 Vapor deposition |
| 11/02/1993 | US5258204 Chemical vapor deposition of metal oxide films from reaction product precursors |
| 11/02/1993 | US5258170 Process for producing silicon carbide platelets |
| 10/28/1993 | WO1993021364A2 Epitaxially strengthened single crystal aluminum garnet reinforcement fibers |
| 10/28/1993 | WO1993021109A1 Method of making materials using vapor phase transport and reactive gases |
| 10/28/1993 | DE4213292A1 Verwendung von metallorganischen Verbindungen zur Abscheidung des Metalls auf Substraten Use of organometallic compounds for the deposition of the metal on substrates |
| 10/27/1993 | EP0567329A2 Substrate for epitaxy and epitaxy using the substrate |
| 10/26/1993 | US5256244 Pulsation of hydrolyzable metal chloride and water under pressure |
| 10/26/1993 | US5256243 Process for producing titanium carbide whisker |
| 10/26/1993 | US5256060 Reducing gas recirculation in thermal processing furnace |