Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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12/13/1989 | EP0345859A1 Process for forming epitaxial layers |
12/13/1989 | EP0345441A2 High-Tc superconductor-gallate crystal structures |
12/12/1989 | US4886683 Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials |
12/06/1989 | EP0344372A1 Hexagonal silicon carbide platelets and preforms and methods for making and using same |
12/06/1989 | EP0344352A1 Method for making artificial layered high-Tc superconductors |
11/30/1989 | WO1989011556A1 Process for vapor-phase synthesis of diamond |
11/29/1989 | EP0343846A2 Process for the preparation of polycrystalline diamond |
11/29/1989 | EP0343381A1 Improved diamond crystal growth process |
11/28/1989 | US4883561 Lift-off and subsequent bonding of epitaxial films |
11/28/1989 | US4883020 Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor |
11/23/1989 | EP0343072A1 Device for heat transmission under vacuum with grains |
11/23/1989 | EP0342656A2 Method of manufacturing a compound semiconductor light emitting device |
11/23/1989 | EP0342444A2 Cyclical organic-metal compounds |
11/23/1989 | DE3816788A1 Epitaxy apparatus |
11/21/1989 | US4882300 Vapor phase epitaxial growth |
11/21/1989 | US4882136 Process for the production of transparent aluminum nitride films |
11/21/1989 | US4882135 Process for the production of transparent aluminum nitride coatings from ammine salts of aluminum iodides |
11/14/1989 | US4880612 Aluminum, iodine compound and ammonia |
11/14/1989 | US4880492 Organometallic compounds |
11/07/1989 | US4878989 Atomic hydrogen to scavenge carbon residues in semiconductors |
11/02/1989 | EP0339793A1 Method for forming crystal layer on a substrate |
10/18/1989 | EP0337304A1 Use of monophenylarsines or diphenylarsines for the preparation of epitaxial layers in the gas phase |
10/17/1989 | US4874634 Passing gas stream of volatile tellurium compound over substrate in mercury vapor, switching on and off supply of cadmium compound, varying intensity of electromagnetic radiation applied |
10/17/1989 | US4874464 Process for epitaxial deposition of silicon |
10/11/1989 | EP0221895B1 Container for corrosive liquids |
10/10/1989 | US4873115 Method of sythesizing carbon film and carbon particles in a vapor phase |
10/10/1989 | US4873070 Process for producing silicon carbide whiskers |
10/10/1989 | US4873069 Method for the preparation of silicon carbide whiskers |
10/10/1989 | CA1262294A1 Method of manufacturing a semiconductor device by vapour phase deposition using multiple inlet flow control |
10/05/1989 | WO1989009490A1 Tapered laser or waveguide optoelectronic structures and method |
10/05/1989 | WO1989009294A1 Precursors for metal fluoride deposition and use thereof |
09/27/1989 | EP0334433A1 Planetary reactor for epitaxy |
09/27/1989 | EP0334432A1 Epitaxy reactor with wall protected against deposits |
09/27/1989 | EP0334374A2 Process of forming a superconductive wiring strip in low temperature ambient |
09/27/1989 | CN1035855A Process for depositing film mainly comprising carbon |
09/26/1989 | US4870030 Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer |
09/26/1989 | US4869924 Microwaves from plurality of directions |
09/26/1989 | US4869923 Chemical vapor deposition |
09/26/1989 | US4869284 Manifold assembly |
09/20/1989 | EP0333120A1 Method for producing semiconductive single crystal |
09/13/1989 | EP0332198A1 Method for producing semiconductive single crystal |
09/12/1989 | US4865659 Vapor deposition of inclined single crystal film on semiconduc tor electronics radiation resistance |
09/12/1989 | US4865655 Electrography; uniform brightness of light emitting diodes |
09/08/1989 | WO1989008329A1 Photoconductive cell |
09/06/1989 | EP0330708A1 Apparatus for forming thin films |
09/05/1989 | US4863529 Thin film single crystal diamond substrate |
08/30/1989 | EP0330524A1 Improvements relating to the deposition of thin carbon films |
08/29/1989 | US4861524 Apparatus for producing a gas mixture by the saturation method |
08/29/1989 | US4861417 Method of growing group III-V compound semiconductor epitaxial layer |
08/29/1989 | US4860687 Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface |
08/23/1989 | EP0329103A2 Process for manufacturing thin film of high-Tc superconducting oxide |
08/23/1989 | EP0328888A1 Thermostatic device for the safe and controlled vaporization of noxious or liquid source materials that are highly reactive in the air, especially for low pressure vapour discharge systems in the field of semiconductors |
08/22/1989 | US4859627 Group VI doping of III-V semiconductors during ALE |
08/22/1989 | US4859625 Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy |
08/22/1989 | US4859493 Methods of forming synthetic diamond coatings on particles using microwaves |
08/22/1989 | US4859490 Method for synthesizing diamond |
08/22/1989 | US4859375 Chemical refill system |
08/22/1989 | US4858558 Film forming apparatus |
08/22/1989 | US4858557 Epitaxial reactors |
08/15/1989 | US4857136 Reactor monitoring system and method |
08/10/1989 | DE3834963A1 Method for the epitaxial production of a layer of a metal oxide superconductor material having high critical temperature |
08/09/1989 | EP0327110A1 Method for producing sintered hard metal with diamond film |
08/09/1989 | EP0327051A1 Diamond and its preparation by chemical vapor deposition method |
08/09/1989 | EP0327034A2 Process for the formation of a functional deposited film containing groups II and VI atoms as the main constituent atoms by microwave plasma chemical vapor deposition process |
08/08/1989 | US4855255 Tapered laser or waveguide optoelectronic method |
08/08/1989 | US4855254 Method of growing a single crystalline β-SiC layer on a silicon substrate |
08/08/1989 | US4855249 Process for growing III-V compound semiconductors on sapphire using a buffer layer |
08/08/1989 | US4855119 Method of manufacturing silicon carbide whisker |
08/02/1989 | EP0325797A1 Zinc oxide whiskers having a tetrapod crystalline form and method for making the same |
08/02/1989 | EP0325663A1 Film forming apparatus |
08/01/1989 | US4853076 Heat treatment while crystallizing to produce tensile stress which produces electron mobility |
07/26/1989 | EP0325275A2 A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal |
07/26/1989 | EP0324812A1 Material-saving process for producing crystalline solid solutions |
07/26/1989 | EP0324811A1 Gas inlet for a plurality of various reaction gases in reaction vessels |
07/26/1989 | EP0324810A1 Quartz glass reactor for mocvd installations |
07/26/1989 | EP0202329B1 Chemical beam deposition method |
07/25/1989 | US4851262 Method of making carbide, nitride and boride powders |
07/25/1989 | US4851254 Method and device for forming diamond film |
07/18/1989 | US4849608 Apparatus for heat-treating wafers |
07/18/1989 | US4849199 Vaporization, photolysis |
07/18/1989 | US4849196 From silicon oxide and carbon, trace amounts of iron, cobalt and nickel catalysts |
07/18/1989 | US4849080 Method of manufacturing an optical stripline waveguide for non-reciprocal optical components |
07/18/1989 | US4848273 Epitaxial growth method and apparatus therefor |
07/18/1989 | US4848272 Apparatus for forming thin films |
07/13/1989 | WO1989006354A1 Differential ellipsometer |
07/12/1989 | EP0323902A2 Apparatus for thermal transfer with a semiconductor wafer in vacuum |
07/11/1989 | US4846931 Single crystals, releasing, multilayer |
07/11/1989 | US4846926 HcCdTe epitaxially grown on crystalline support |
07/11/1989 | US4846102 Reaction chambers for CVD systems |
07/05/1989 | EP0322615A1 Method of growing a single crystalline beta-silicon carbide layer on a silicon substrate |
06/28/1989 | EP0322050A2 Electronic device manufacture with deposition of material, particularly cadmium mercury telluride |
06/28/1989 | EP0321909A2 Process and apparatus for atomic-layer epitaxy |
06/28/1989 | EP0321557A1 Process for the deposition of diamond films |
06/27/1989 | US4843030 Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes |
06/27/1989 | US4842759 Acicular process for producing particulate material |
06/21/1989 | EP0320971A2 Epitaxial growth apparatus |
06/21/1989 | EP0320657A1 Improved diamond growth process |
06/20/1989 | US4840921 Process for the growth of III-V group compound semiconductor crystal on a Si substrate |
06/13/1989 | US4839150 Production of silicon carbide |
06/13/1989 | US4839145 Substrates mounted on rotatable susceptor; semiconductors |