Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
12/1989
12/13/1989EP0345859A1 Process for forming epitaxial layers
12/13/1989EP0345441A2 High-Tc superconductor-gallate crystal structures
12/12/1989US4886683 Low temperature metalorganic chemical vapor depostion growth of group II-VI semiconductor materials
12/06/1989EP0344372A1 Hexagonal silicon carbide platelets and preforms and methods for making and using same
12/06/1989EP0344352A1 Method for making artificial layered high-Tc superconductors
11/1989
11/30/1989WO1989011556A1 Process for vapor-phase synthesis of diamond
11/29/1989EP0343846A2 Process for the preparation of polycrystalline diamond
11/29/1989EP0343381A1 Improved diamond crystal growth process
11/28/1989US4883561 Lift-off and subsequent bonding of epitaxial films
11/28/1989US4883020 Apparatus of metal organic chemical vapor deposition for growing epitaxial layer of compound semiconductor
11/23/1989EP0343072A1 Device for heat transmission under vacuum with grains
11/23/1989EP0342656A2 Method of manufacturing a compound semiconductor light emitting device
11/23/1989EP0342444A2 Cyclical organic-metal compounds
11/23/1989DE3816788A1 Epitaxy apparatus
11/21/1989US4882300 Vapor phase epitaxial growth
11/21/1989US4882136 Process for the production of transparent aluminum nitride films
11/21/1989US4882135 Process for the production of transparent aluminum nitride coatings from ammine salts of aluminum iodides
11/14/1989US4880612 Aluminum, iodine compound and ammonia
11/14/1989US4880492 Organometallic compounds
11/07/1989US4878989 Atomic hydrogen to scavenge carbon residues in semiconductors
11/02/1989EP0339793A1 Method for forming crystal layer on a substrate
10/1989
10/18/1989EP0337304A1 Use of monophenylarsines or diphenylarsines for the preparation of epitaxial layers in the gas phase
10/17/1989US4874634 Passing gas stream of volatile tellurium compound over substrate in mercury vapor, switching on and off supply of cadmium compound, varying intensity of electromagnetic radiation applied
10/17/1989US4874464 Process for epitaxial deposition of silicon
10/11/1989EP0221895B1 Container for corrosive liquids
10/10/1989US4873115 Method of sythesizing carbon film and carbon particles in a vapor phase
10/10/1989US4873070 Process for producing silicon carbide whiskers
10/10/1989US4873069 Method for the preparation of silicon carbide whiskers
10/10/1989CA1262294A1 Method of manufacturing a semiconductor device by vapour phase deposition using multiple inlet flow control
10/05/1989WO1989009490A1 Tapered laser or waveguide optoelectronic structures and method
10/05/1989WO1989009294A1 Precursors for metal fluoride deposition and use thereof
09/1989
09/27/1989EP0334433A1 Planetary reactor for epitaxy
09/27/1989EP0334432A1 Epitaxy reactor with wall protected against deposits
09/27/1989EP0334374A2 Process of forming a superconductive wiring strip in low temperature ambient
09/27/1989CN1035855A Process for depositing film mainly comprising carbon
09/26/1989US4870030 Remote plasma enhanced CVD method for growing an epitaxial semiconductor layer
09/26/1989US4869924 Microwaves from plurality of directions
09/26/1989US4869923 Chemical vapor deposition
09/26/1989US4869284 Manifold assembly
09/20/1989EP0333120A1 Method for producing semiconductive single crystal
09/13/1989EP0332198A1 Method for producing semiconductive single crystal
09/12/1989US4865659 Vapor deposition of inclined single crystal film on semiconduc tor electronics radiation resistance
09/12/1989US4865655 Electrography; uniform brightness of light emitting diodes
09/08/1989WO1989008329A1 Photoconductive cell
09/06/1989EP0330708A1 Apparatus for forming thin films
09/05/1989US4863529 Thin film single crystal diamond substrate
08/1989
08/30/1989EP0330524A1 Improvements relating to the deposition of thin carbon films
08/29/1989US4861524 Apparatus for producing a gas mixture by the saturation method
08/29/1989US4861417 Method of growing group III-V compound semiconductor epitaxial layer
08/29/1989US4860687 Device comprising a flat susceptor rotating parallel to a reference surface about a shift perpendicular to this surface
08/23/1989EP0329103A2 Process for manufacturing thin film of high-Tc superconducting oxide
08/23/1989EP0328888A1 Thermostatic device for the safe and controlled vaporization of noxious or liquid source materials that are highly reactive in the air, especially for low pressure vapour discharge systems in the field of semiconductors
08/22/1989US4859627 Group VI doping of III-V semiconductors during ALE
08/22/1989US4859625 Method for epitaxial growth of compound semiconductor using MOCVD with molecular layer epitaxy
08/22/1989US4859493 Methods of forming synthetic diamond coatings on particles using microwaves
08/22/1989US4859490 Method for synthesizing diamond
08/22/1989US4859375 Chemical refill system
08/22/1989US4858558 Film forming apparatus
08/22/1989US4858557 Epitaxial reactors
08/15/1989US4857136 Reactor monitoring system and method
08/10/1989DE3834963A1 Method for the epitaxial production of a layer of a metal oxide superconductor material having high critical temperature
08/09/1989EP0327110A1 Method for producing sintered hard metal with diamond film
08/09/1989EP0327051A1 Diamond and its preparation by chemical vapor deposition method
08/09/1989EP0327034A2 Process for the formation of a functional deposited film containing groups II and VI atoms as the main constituent atoms by microwave plasma chemical vapor deposition process
08/08/1989US4855255 Tapered laser or waveguide optoelectronic method
08/08/1989US4855254 Method of growing a single crystalline β-SiC layer on a silicon substrate
08/08/1989US4855249 Process for growing III-V compound semiconductors on sapphire using a buffer layer
08/08/1989US4855119 Method of manufacturing silicon carbide whisker
08/02/1989EP0325797A1 Zinc oxide whiskers having a tetrapod crystalline form and method for making the same
08/02/1989EP0325663A1 Film forming apparatus
08/01/1989US4853076 Heat treatment while crystallizing to produce tensile stress which produces electron mobility
07/1989
07/26/1989EP0325275A2 A visible light semiconductor laser with (AlxGa1-x)0.5In0.5P crystal layers and a process for growing an (AlxGa1-x)0.5In0.5P crystal
07/26/1989EP0324812A1 Material-saving process for producing crystalline solid solutions
07/26/1989EP0324811A1 Gas inlet for a plurality of various reaction gases in reaction vessels
07/26/1989EP0324810A1 Quartz glass reactor for mocvd installations
07/26/1989EP0202329B1 Chemical beam deposition method
07/25/1989US4851262 Method of making carbide, nitride and boride powders
07/25/1989US4851254 Method and device for forming diamond film
07/18/1989US4849608 Apparatus for heat-treating wafers
07/18/1989US4849199 Vaporization, photolysis
07/18/1989US4849196 From silicon oxide and carbon, trace amounts of iron, cobalt and nickel catalysts
07/18/1989US4849080 Method of manufacturing an optical stripline waveguide for non-reciprocal optical components
07/18/1989US4848273 Epitaxial growth method and apparatus therefor
07/18/1989US4848272 Apparatus for forming thin films
07/13/1989WO1989006354A1 Differential ellipsometer
07/12/1989EP0323902A2 Apparatus for thermal transfer with a semiconductor wafer in vacuum
07/11/1989US4846931 Single crystals, releasing, multilayer
07/11/1989US4846926 HcCdTe epitaxially grown on crystalline support
07/11/1989US4846102 Reaction chambers for CVD systems
07/05/1989EP0322615A1 Method of growing a single crystalline beta-silicon carbide layer on a silicon substrate
06/1989
06/28/1989EP0322050A2 Electronic device manufacture with deposition of material, particularly cadmium mercury telluride
06/28/1989EP0321909A2 Process and apparatus for atomic-layer epitaxy
06/28/1989EP0321557A1 Process for the deposition of diamond films
06/27/1989US4843030 Semiconductor processing by a combination of photolytic, pyrolytic and catalytic processes
06/27/1989US4842759 Acicular process for producing particulate material
06/21/1989EP0320971A2 Epitaxial growth apparatus
06/21/1989EP0320657A1 Improved diamond growth process
06/20/1989US4840921 Process for the growth of III-V group compound semiconductor crystal on a Si substrate
06/13/1989US4839150 Production of silicon carbide
06/13/1989US4839145 Substrates mounted on rotatable susceptor; semiconductors
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