| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
|---|
| 06/13/1989 | US4838983 Advancing semiconductor substrate along circular path |
| 06/13/1989 | US4838201 Apparatus and process for vacuum chemical epitaxy |
| 06/08/1989 | DE3840042A1 Vorrichtung zum chemischen bedampfen mittels laser unter verwendung von lichtleitfasern Chemical vapor deposition apparatus using a laser using optical fibers |
| 06/07/1989 | EP0319122A1 Apparatus and its use for producing semiconductors |
| 06/07/1989 | EP0319121A1 Apparatus for producing semiconductors |
| 06/07/1989 | EP0318506A1 Laser assisted fiber growth |
| 06/06/1989 | US4837182 Growth mask on substrate; forming, removal sheet |
| 06/06/1989 | US4836233 Method and apparatus for venting vacuum processing equipment |
| 05/30/1989 | US4834831 Method for growing single crystal thin films of element semiconductor |
| 05/23/1989 | US4832781 Methods and apparatus for thermal transfer with a semiconductor wafer in vacuum |
| 05/23/1989 | CA1254356A1 Fluid wall reactor and method for production of fibers |
| 05/16/1989 | US4830982 Resistivity |
| 05/16/1989 | US4830702 Hollow cathode plasma assisted apparatus and method of diamond synthesis |
| 05/09/1989 | US4829021 Group 3 organometallic and group 5 compounds, injection, semiconductors |
| 05/09/1989 | US4828938 Vapor deposition, semiconductor thin films |
| 05/09/1989 | US4828224 Chemical vapor deposition system |
| 05/09/1989 | CA1253667A1 Process for producing silicon carbide whisker |
| 05/02/1989 | US4825809 Chemical vapor deposition apparatus having an ejecting head for ejecting a laminated reaction gas flow |
| 04/25/1989 | US4823736 Barrel structure for semiconductor epitaxial reactor |
| 04/25/1989 | US4823735 Reflector apparatus for chemical vapor deposition reactors |
| 04/20/1989 | WO1989003493A1 Chemical vapor deposition system |
| 04/19/1989 | EP0312202A1 Crystal formation method |
| 04/18/1989 | US4822466 Chemically bonded diamond films and method for producing same |
| 04/18/1989 | CA1252695A1 Deposition technique |
| 04/12/1989 | EP0311446A2 Apparatus for producing compound semiconductor |
| 04/11/1989 | US4819579 Coating of semiconductor wafers and apparatus therefor |
| 04/05/1989 | EP0310265A1 Formation of fibrous silicon carbide and silicon nitride |
| 04/04/1989 | US4818636 Films of catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
| 04/04/1989 | US4818563 Process for forming deposited film |
| 03/29/1989 | EP0308946A2 Chemical vapor deposition apparatus for obtaining high quality epitaxial layer with uniform film thickness |
| 03/29/1989 | EP0308869A2 Process of producing single crystalline LnA2Cu3O7-x thin films having three-layered perovskite structure |
| 03/28/1989 | US4816420 Method of producing tandem solar cell devices from sheets of crystalline material |
| 03/28/1989 | US4816291 Process for making diamond, doped diamond, diamond-cubic boron nitride composite films |
| 03/28/1989 | US4816286 Process for synthesis of diamond by CVD |
| 03/22/1989 | EP0307995A2 Process and device for gas delivery to an epitaxy apparatus |
| 03/22/1989 | EP0307682A2 Process for producing transparent aluminium nitride foil or coatings from aluminium iodide ammine salts |
| 03/22/1989 | EP0307674A2 Hexaammine aluminium iodide monoammine, and method for its preparation |
| 03/15/1989 | EP0307109A1 Method for forming semiconductor crystal and semiconductor crystal article obtained by said method |
| 03/15/1989 | CN2034176U Double temp. heating furnace for semi-conductor crystal growth |
| 03/14/1989 | US4812352 Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 03/08/1989 | EP0306154A1 Crystal article, method for producing the same and semiconductor device utilizing the same |
| 03/08/1989 | EP0306153A1 Method for growth of crystal |
| 03/08/1989 | EP0305903A1 Method for synthesis of diamond and apparatus therefor |
| 03/08/1989 | EP0305790A1 Production of graphite intercalation compound and doped carbon films |
| 03/08/1989 | EP0305461A1 Epitaxial installation. |
| 03/01/1989 | EP0305195A2 Continuous chemical vapor deposition growth of strain layer superlattices using conventional CVD reactors |
| 03/01/1989 | EP0305144A2 Method of forming crystalline compound semiconductor film |
| 03/01/1989 | EP0200766B1 Method of growing crystalline layers by vapour phase epitaxy |
| 02/28/1989 | US4808551 Method for halide VPE of III-V compound semiconductors |
| 02/28/1989 | US4807561 Semiconductor vapor phase growth apparatus |
| 02/28/1989 | CA1250511A1 Technique for the growth of epitaxial compound semiconductor films |
| 02/22/1989 | EP0304201A1 Process for making diamond doped diamond and diamond-cubic boron nitride composite films |
| 02/21/1989 | US4806321 Use of infrared radiation and an ellipsoidal reflection mirror |
| 02/21/1989 | US4805555 Apparatus for forming a thin film |
| 02/21/1989 | CA1250209A1 Method of producing ii-v compound semiconductors |
| 02/15/1989 | EP0303479A2 Method of preparing whiskers of silicon carbide and other materials |
| 02/14/1989 | US4804638 Metalorganic chemical vapor deposition growth of Group II-IV semiconductor materials having improved compositional uniformity |
| 02/07/1989 | US4803123 Process for production of fibrous carbon material |
| 01/31/1989 | US4801557 Vapor-phase epitaxy of indium phosphide and other compounds using flow-rate modulation |
| 01/25/1989 | EP0300904A1 Process for the epitaxial growth of layers of III-V or II-VI materials by rapid temperature modulation |
| 01/24/1989 | US4800173 Process for preparing Si or Ge epitaxial film using fluorine oxidant |
| 01/18/1989 | EP0299879A2 A superconducting thin film and a method for preparing the same |
| 01/17/1989 | US4798743 Vapor deposition method for the GaAs thin film |
| 01/17/1989 | US4798165 Apparatus for chemical vapor deposition using an axially symmetric gas flow |
| 01/12/1989 | WO1989000335A1 Material-saving process for producing crystalline solid solutions |
| 01/12/1989 | WO1989000212A1 Quartz glass reactor for mocvd installations |
| 01/12/1989 | WO1989000080A1 Gas inlet for a plurality of various reaction gases in reaction vessels |
| 01/12/1989 | DE3721638A1 Materialsparendes verfahren zur herstellung von mischkristallen Material-saving process for preparing a mixed crystal |
| 01/12/1989 | DE3721637A1 Gaseinlass fuer eine mehrzahl verschiedener reaktionsgase in reaktionsgefaesse Gas inlet for a plurality of different reactive gases in reaktionsgefaesse |
| 01/04/1989 | EP0297867A2 A process for the growth of III-V group compound semiconductor crystal on a Si substrate |
| 01/04/1989 | EP0297845A2 Plasma assisted apparatus and method of diamond synthesis |
| 12/29/1988 | WO1988010324A1 Improved reaction chambers and methods for cvd |
| 12/29/1988 | WO1988010321A1 Process for the deposition of diamond films |
| 12/28/1988 | EP0296804A2 Process for epitaxial deposition of silicone |
| 12/28/1988 | EP0296257A1 Branched monoalkyl group V A compounds as MOCVD element sources |
| 12/28/1988 | CA1247326A Process for production of silicon nitride |
| 12/21/1988 | EP0295786A2 A process for growing silicon-on-insulator wafers |
| 12/21/1988 | EP0295272A1 Production of silicon carbide |
| 12/20/1988 | CA1246967A1 Growth of semi-conductors and apparatus for use therein |
| 12/15/1988 | DE3726809C1 Gradient plate |
| 12/07/1988 | EP0293439A1 Semi-insulating group iii-v based compositions. |
| 12/06/1988 | US4789771 Method and apparatus for substrate heating in an axially symmetric epitaxial deposition apparatus |
| 12/06/1988 | US4789537 Prealloyed catalyst for growing silicon carbide whiskers |
| 12/06/1988 | US4789536 Porous silica and carbon; moving stacked trays through preheating, reaction, cooling zones |
| 11/30/1988 | EP0293021A2 Induction heating system for an epitaxial reactor |
| 11/29/1988 | US4788049 Heating ammonia and a chlorosilane to intermediate silicon chloroimide; comminution, controlled firing to nitride |
| 11/17/1988 | WO1988008891A1 METHOD OF PURIFYING AND DEPOSITING GROUP IIIa AND GROUP Va COMPOUNDS TO PRODUCE EPITAXIAL FILMS |
| 11/17/1988 | EP0291273A2 Reflector apparatus for chemical vapor deposition reactors |
| 11/17/1988 | EP0291222A2 Semiconductor heterointerface optical waveguide |
| 11/09/1988 | EP0290258A1 VLS fiber growth process |
| 11/08/1988 | US4783343 Method for supplying metal organic gas and an apparatus for realizing same |
| 11/02/1988 | EP0289117A2 Method of forming crystals on a substrate |
| 11/02/1988 | EP0289114A2 Process for producing crystals on a light-transmissive substrate |
| 11/02/1988 | EP0288526A1 Process for depositing layers of diamond |
| 11/01/1988 | US4782034 Semiconductors |
| 10/26/1988 | EP0288242A1 A semiconductor crystal growth apparatus |
| 10/26/1988 | EP0288166A2 Process for selective formation of III - V group compound film |
| 10/26/1988 | EP0288108A1 Electronic device manufacture |
| 10/26/1988 | EP0288065A2 Method for synthesis of diamond |
| 10/26/1988 | EP0172876B1 Deposition technique |