Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
---|
01/21/1992 | US5082798 Crystal growth method |
01/21/1992 | US5082522 Dielectric layer in semiconductor |
01/21/1992 | US5082359 Diamond films and method of growing diamond films on nondiamond substrates |
01/15/1992 | CN1057869A Isotopically pure single crystal epitaxial diamond films and their preparation |
01/14/1992 | US5080975 Composite diamond granules |
01/14/1992 | US5080879 Process for producing silicon carbide platelets and the platelets so produced |
01/09/1992 | WO1992000406A1 Uniform deposition of a thin film on a surface |
01/08/1992 | EP0464611A1 Isotopically pure single crystal epitaxial diamond films and their preparation |
01/07/1992 | US5077875 Reactor vessel for the growth of heterojunction devices |
01/03/1992 | CA2042268A1 Isotopically pure single crystal epitaxial diamond films and their preparation |
01/02/1992 | EP0463863A1 Gas-phase growing method for the method |
01/02/1992 | EP0463633A1 Chemical-vapor-deposition apparatus and method for reducing particulate contamination in a chemical-vapor-deposition process |
12/31/1991 | US5076206 Vertical LPCVD reactor |
12/27/1991 | EP0462158A1 Use of metallo-organic compounds for vapour deposition of thin films |
12/27/1991 | EP0462135A1 Metallo-organic adduct compounds. |
12/26/1991 | WO1991020093A1 Ellipsometric control of material growth |
12/24/1991 | US5075096 Using reducing atmosphere of combustion flame |
12/24/1991 | US5074954 Process and apparatus for growing compound semiconductor monocrystal |
12/24/1991 | US5074017 Susceptor |
12/18/1991 | EP0461406A1 Single ended ultra-high vacuum chemical vapor deposition (UHV/CVD) reactor |
12/18/1991 | EP0461194A1 A high capacity epitaxial reactor |
12/14/1991 | CA2042210A1 Free standing diamond sheet and method and apparatus for making same |
12/12/1991 | WO1991019028A1 Organo-element compounds for use in the electronics field |
12/12/1991 | WO1991019025A1 Process for the measurement of the thickness and refractive index of a thin film on a substrate, and a device for carrying out the process |
12/11/1991 | EP0460598A1 Organic compounds for application in the field of electronics |
12/10/1991 | US5071708 Composite diamond grain |
12/10/1991 | US5070814 Cvd reactor vessel for forming a solid state electronic device |
12/03/1991 | US5069930 Method for the evaporation of monomers that are liquid at room temperature |
12/03/1991 | US5069244 Liquid source container device |
12/03/1991 | CA1292662C Process for forming deposited film |
11/26/1991 | WO1991019027A1 Process for producing unagglomerated single crystals of aluminum nitride |
11/26/1991 | US5068871 Process for synthesizing diamond and apparatus therefor |
11/26/1991 | CA2083708A1 Process for producing unagglomerated single crystals of aluminum nitride |
11/21/1991 | EP0457076A2 Method for producing synthetic diamond thin film, the thin film and device using it |
11/19/1991 | US5066475 Reinforcing Materials |
11/13/1991 | EP0456426A1 Vacuum type wafer holder |
11/13/1991 | EP0456372A1 Perimeter wafer seal with gas exclusion |
11/13/1991 | EP0455981A1 Method of forming crystals |
11/12/1991 | US5064778 Vapor-phase epitaxial growth method |
11/12/1991 | US5063783 Pressure monitoring and method |
11/12/1991 | CA1291926C Semi-insulating group iii-v based compositions doped using bis arene titanium sources |
11/05/1991 | US5062386 Induction heated pancake epitaxial reactor |
11/05/1991 | CA1291634C Method of manufacturing an optical stripline waveguide for non-reciprocal optical components |
10/30/1991 | EP0263141B1 Method for depositing materials containing tellurium |
10/29/1991 | US5061643 Method of doping a growing crystalline semiconductor film |
10/29/1991 | US5061072 Differential ellipsometer |
10/23/1991 | EP0452950A2 Semiconductor device using whiskers and manufacturing method of the same |
10/17/1991 | WO1991009995A3 Process for the deposition of thin films on solids |
10/16/1991 | EP0451789A1 Method of forming semiconductor thin film |
10/16/1991 | EP0451502A1 Metal-metal epitaxy on substrates |
10/09/1991 | EP0450642A1 Crystal growth method |
10/09/1991 | CN1055258A Pressure-rducing process and system for gas epitaxy of semiconductors |
10/08/1991 | US5055276 Useful for composite reinforcement; larger diameter |
10/03/1991 | WO1991014572A1 Diamond-on-a-substrate for electronic applications |
10/01/1991 | US5053247 Method for increasing the batch size of a barrel epitaxial reactor and reactor produced thereby |
09/24/1991 | US5051785 N-type semiconducting diamond, and method of making the same |
09/24/1991 | US5051117 Process for removing gaseous contaminating compounds from carrier gases containing halosilane compounds |
09/24/1991 | US5051054 Elevating table and transporting method |
09/19/1991 | WO1991014280A1 Process for growing semiconductor crystal |
09/19/1991 | WO1991014028A1 High temperature superconducting films on aluminum oxide substrates |
09/19/1991 | WO1991013679A1 Bulk gas sorption composition and apparatus |
09/18/1991 | EP0447031A1 Composite susceptor |
09/18/1991 | EP0446657A1 Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
09/17/1991 | US5049409 Method for metal or metal compounds inserted between adjacent graphite layers |
09/17/1991 | US5048800 Furnaces; insulated multilayer tubes |
09/11/1991 | EP0445754A1 Method for growing a diamond or c-BN thin film |
09/11/1991 | EP0445596A2 Double-dome reactor for semiconductor processing |
09/11/1991 | EP0445307A1 Single crystal oxide substrate, superconductor device produced therefrom, and producing thereof |
09/06/1991 | CA2034765A1 Susceptor for use in chemical vapor deposition apparatus and its method of use |
09/03/1991 | US5045496 Semi-insulating cobalt doped indium phosphide grown by MOCVD |
09/03/1991 | US5044943 Spoked susceptor support for enhanced thermal uniformity of susceptor in semiconductor wafer processing apparatus |
09/03/1991 | US5044315 Epitaxial deposition on wafer |
08/28/1991 | EP0443920A1 Process for the controlled growth of needle-like crystals and their application for making pointed microcathodes |
08/27/1991 | US5043301 Method of thermally treating semiconductor wafers in furnace and wafer hanger useful therein |
08/21/1991 | EP0442490A1 Method for producing single crystal boron nitride film |
08/14/1991 | EP0441429A2 Process for growing mixed crystals from multi-component oxide melts |
08/13/1991 | US5039626 Method for heteroepitaxial growth of a two-dimensional material on a three-dimensional material |
08/13/1991 | US5039561 Vapor deposition of organic compound, then vacuum annealing yields layer of uniform crystalline particles |
08/13/1991 | US5039501 Heating a carbon substrate in reactive environment consisting of silicon, nitrogen, sulfur, and group II metals |
08/13/1991 | US5038840 Bubbler container automatic refill system |
08/13/1991 | US5038711 Epitaxial facility |
08/13/1991 | CA1287555C Metalorganic vapor phase epitaxial growth of group ii-vi semiconductor materials |
08/06/1991 | US5037674 Method of chemically vapor depositing a thin film of GaAs |
08/06/1991 | US5037626 Process for producing silicon carbide whiskers using seeding agent |
08/06/1991 | US5037502 Process for producing a single-crystal substrate of silicon carbide |
07/31/1991 | EP0439064A1 Method of epitaxially growing compound crystal and doping method therein |
07/31/1991 | CN1053511A Method for obtaining heterojunction semiconductor and super crystal lattice materials and equipments thereof |
07/30/1991 | US5036022 Metal organic vapor phase epitaxial growth of group III-V semiconductor materials |
07/30/1991 | US5035767 Preparation of gallium arsenide |
07/25/1991 | WO1991010873A1 Heating apparatus for semiconductor wafers or substrates |
07/25/1991 | DE4040035A1 Hard metallic carbon structure - with higher bulk modulus and hardness and lower density than diamond |
07/24/1991 | EP0437704A2 Process for synthesizing diamond and diamond synthesis apparatus |
07/23/1991 | US5033538 Workpiece carrier for a disk-shaped workpiece as well as a vacuum process space |
07/23/1991 | CA1286494C Bubbler cylinder device |
07/17/1991 | EP0437196A1 Liquid source container device |
07/17/1991 | CN1053146A Mixed matter epitaxy on gallium arsenide substrate |
07/16/1991 | US5032472 Vapor deposited thin film |
07/13/1991 | CA2033138A1 Superhard carbon metal |
07/11/1991 | WO1991009995A2 Process for the deposition of thin films on solids |
07/09/1991 | US5030741 Cyclic organometallic compounds |