Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
07/2002
07/03/2002EP1220308A2 Etching method for ZnSe polycrystalline substrate
07/03/2002EP1218931A2 A method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
07/03/2002EP0578746B1 GENES WHICH INFLUENCE $i(PICHIA) PROTEOLYTIC ACTIVITY, AND USES THEREFOR
07/02/2002US6413923 Non-corrosive cleaning composition for removing plasma etching residues
06/2002
06/27/2002US20020081861 Silicon-germanium-carbon compositions and processes thereof
06/27/2002US20020081857 Etching method for ZnSe polycrystalline substrate
06/27/2002US20020081847 Etchant is hydrogen peroxide (H2O2), and a mixed solution including at least one of an organic acid, an inorganic acid, and a neutral salt; for liquid crystal display devices having copper lines
06/13/2002WO2002046280A1 Etchant for thermoplastic polyimide resin
06/11/2002US6403211 Liquid crystal polymer for flexible circuits
06/11/2002CA2007608C Composition and method for stripping tin or tin-lead alloy from copper surfaces
06/06/2002US20020068188 Method for depositing metal and metal oxide films and patterned films
06/06/2002US20020066884 Etching gas for silicon etch back
06/06/2002US20020066234 Acidic slurry of an oxidizer, deionized water, a corrosion inhibitor and a surfactant
05/2002
05/21/2002US6391119 Cleaning metal oxide films with acid etching and immersion
05/21/2002CA2037490C Wet-etch process and composition
05/15/2002CN1349376A Etching liquid, and mehtod for mfg. flexible distributing board
05/09/2002US20020055447 Etching liquid composition
05/08/2002EP1203405A2 Method for etching bismuth-containing oxide films
05/08/2002EP1203404A1 Etching solution, containing hydrofluoric acid
05/07/2002US6383410 Ammonium fluoride or an organic derivative of ammonium fluoride or polyammonium fluoride, ethylene glycol and an amine
05/02/2002US20020052120 Method of fabricating semiconductor device and wafer treatment apparatus employed therefor as well as semiconductor device
05/02/2002DE10026030A1 Etching process used in metal or glass processing or electronics industry, e.g. for etching oxide on silicon wafer, is homogeneous mixture of hydrogen fluoride and polyfluorinated hydrocarbon
05/01/2002CN1346864A 蚀刻液组合物 Etchant compositions
04/2002
04/25/2002WO2002033023A1 Slurry for chemical-mechanical polishing copper damascene structures
04/24/2002CN1346331A Method for producing high-purity solutions using gaseous hydrogen fluoride
04/24/2002CN1083441C Process for preparing bis-alkoxyl-triazinyl-amino-containing stilbene disulphonic acids or their derivatives
04/23/2002US6375693 Chemical-mechanical planarization of barriers or liners for copper metallurgy
04/18/2002WO2002031072A1 Cmp slurry composition and a method for planarizing semiconductor device using the same
04/18/2002US20020043644 Selective silicon oxide etchant formulation including fluoride salt, chelating agent, and glycol solvent
04/11/2002US20020042207 Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water
04/03/2002EP1192676A1 Aligned polymers for an organic tft
04/02/2002US6364919 Constant pressure in dispersion chambers prevents macro particles would lead to scratching
03/2002
03/28/2002WO2002025713A1 Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds
03/28/2002US20020037820 Compositions for cleaning organic and plasma etched residues for semiconductor devices
03/28/2002US20020037654 Laser annealing glass dielectric
03/26/2002US6362108 Composition for mechanical chemical polishing of layers in an insulating material based on a polymer with a low dielectric constant
03/26/2002US6361613 Pickling solution containing nitrate and fluorides
03/21/2002US20020034925 Process for fabricating a semiconductor device
03/21/2002US20020034881 Selecting surface quality for surface of etched wafer and quantity of silicon to be removed from surface of wafer during the etching process; determining concentration of hydrofluoric acid in an aqueous etching solution; etching
03/20/2002CN1081217C Efficient asphalt soaker and its preparation
03/14/2002US20020030178 Etching solutions and processes for manufacturing flexible wiring boards
03/13/2002EP1187225A2 Etching liquid composition
03/07/2002WO2002018099A2 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
03/07/2002US20020028293 Liquid crystal polymers for flexible circuits
02/2002
02/21/2002US20020020833 Oxidizing reactant selected from ammonium persulfate, hydrogen peroxide, nitric acid, co-reactant selected from phosphoric acid, sulfuric acid, nitric acid, oxalic acid, acetic acid, organic acids, additives
02/19/2002US6348239 Depositing amorphous film of metal precursor complex on substrate, irradiating film to cause metal complex to undergo reaction which transforms metal complex into metal containing material adherent to substrate
02/14/2002US20020018755 Dental acid etchant composition and method of use
02/12/2002US6346482 Semiconductor device having an improved contact structure and a manufacturing method thereof
02/07/2002WO2002010480A2 Etching composition and use thereof with feedback control of hf in beol clean
02/07/2002US20020016275 Aqueous dispersion for chemical mechanical polishing used for polishing of copper
02/07/2002US20020016073 Methods of polishing, interconnect-fabrication, and producing semiconductor devices
02/06/2002CN1334961A Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using same
02/06/2002CN1334312A Polycrystalline silicon film surface treating solution and method for surface treatment of polycrystalline silicon film in said solution
02/05/2002US6344418 Semiconductor processing method
01/2002
01/30/2002EP1176633A2 Surface treatment solution for polysilicon film and method of treating the surface of polysilicon film using the same
01/30/2002CN1333843A Process for metallizing a plastic surface
01/30/2002CN1333319A Slurry for chemical-mechanical polishing and forming method, semiconductor device making method
01/24/2002WO2002007205A2 Etching composition and use thereof for cleaning metallization layers
01/24/2002WO2002006423A1 Liquid crystal polymers for flexible circuits
01/17/2002WO2002004573A2 Ready-to-use stable chemical-mechanical polishing slurries
01/17/2002WO2002004233A1 Compositions for cleaning organic and plasma etched residues for semiconductor devices
01/17/2002WO2001024234A3 A method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
01/17/2002US20020006728 Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP process
01/16/2002EP1171379A2 Method for producing high-purity solutions using gaseous hydrogen fluoride
01/10/2002WO2002003432A2 Process for etching silicon wafers
01/10/2002WO2002002706A1 Polishing composition for metal cmp
01/10/2002US20020004360 Polishing slurry
01/02/2002EP1168424A1 Etching solution, etched article and method for etched article
01/02/2002EP1167482A2 Aqueous dispersion for chemical mechanical polishing used for polishing of copper
12/2001
12/26/2001CN1328697A Etching solution, etched article and method for etched article
12/26/2001CN1328696A Etching solution, etched article and mehtod for etched article
12/26/2001CN1327958A Frosting chemical for silicate glass
12/20/2001US20010052510 Contain a proton source, e.g., a mineral acid, an oxidizer agent, e.g., hydrogen peroxide, an azole compound, and a molybdenum source.
12/13/2001US20010051440 Acid blend for removing etch residue
12/13/2001US20010050350 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
12/12/2001CN1076121C Semiconductor chip surface treatment liquor and treatment method and device using the same
12/11/2001US6329299 Compositions and methods for the selective etching of tantalum-containing films for wafer reclamation
12/06/2001US20010048161 Fixed abrasive chemical-mechanical planarization of titanium nitride
11/2001
11/29/2001WO2001090014A1 Etching process
11/22/2001WO2001088998A2 Etching process for making electrodes
11/22/2001US20010044208 Etchant and method for fabricating a semiconductor device using the same
11/21/2001EP0753083B1 Baths and method for chemically polishing stainless steel surfaces
11/15/2001US20010041450 Forming resist mask on silicon oxide film on silicon nitride film having step portion on semiconductor substrate in such way as to have opening above step portion and etching film through opening by plasma etching with fluorohydrocarbon gas
11/15/2001US20010039766 Aqueous dispersion for chemical mechanical polishing
11/13/2001US6316366 Method of polishing using multi-oxidizer slurry
11/13/2001US6315803 Polishing composition and polishing process
11/08/2001WO2001083844A2 Method for depositing metal and metal oxide films and patterned films
11/08/2001WO2001083391A1 Etching pastes for inorganic surfaces
11/06/2001US6313039 Chemical mechanical polishing composition and process
11/01/2001US20010035574 Method for etching
10/2001
10/31/2001EP1150342A1 Etching solution, etched article and method for etched article
10/31/2001EP1150341A1 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
10/31/2001DE10101926A1 Ätzpasten für anorganische Oberflächen Etching pastes for inorganic surfaces
10/30/2001US6310018 Anhydrous cleaning composition comprising 88 weight percent fluorinated solvent, 0.005 to 2 weight percent hydrogen fluoride or complex thereof, 0.01 to 5 weight percent of co-solvent; for semiconductor substrates
10/30/2001US6309560 Chemical mechanical polishing slurry useful for copper substrates
10/24/2001EP1148538A1 Cmp abrasive, liquid additive for cmp abrasive and method for polishing substrate
10/23/2001US6306774 Method of forming a wordline
10/16/2001US6303515 Method of forming a capacitor
10/16/2001US6303514 Composition and method for selectively etching a silicon nitride film
10/16/2001US6302766 System for cleaning a surface of a dielectric material
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