Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
03/2003
03/13/2003WO2003022021A1 Liquid crystal polymers for flexible circuits
03/13/2003US20030049938 Method of wet etching low dielectric constant materials
03/13/2003US20030047710 Chemical-mechanical polishing
03/11/2003US6531071 Iminocarboxylic acid etch retardant
03/11/2003US6530968 Chemical mechanical polishing slurry
03/06/2003US20030042465 Etching dielectrics using fluorohydrocarbon mixture
03/04/2003US6527818 Excellent balance between chemical etching and mechanical polishing performance and aqueous dispersion for chemical mechanical polishing comprising an abrasive, water and a heteropolyacid
02/2003
02/27/2003WO2003016432A1 Method and composition to decrease iron sulfide deposits in pipe lines
02/26/2003CN1399792A Method for etching bismuth-containing oxide films
02/20/2003US20030036569 Do not readily protonate (even in aqueous solutions of low pH), commonly encountered in many extreme applications due to the very low basicity of the perfluorinated anion.
02/19/2003EP1284023A2 Etching process for making electrodes
02/19/2003CN1397488A Post-processing process for increasing specific surface area of carbon nanotube
02/13/2003WO2003012169A1 Metal surface protection film forming agent and application thereof
02/11/2003US6517738 Acid blend for removing etch residue
02/06/2003WO2003010808A1 Method and apparatus for supplying tetrafluoroethylene gas to dry etching apparatus
02/04/2003US6514425 Forming patterns on silicon dioxide films using plasma gases comprising acyclic fluoroethers, having short half-life; pollution control; integrated circuits
01/2003
01/30/2003US20030022801 Applying composition comprising at least one reducing agent for reducing ions of transition metal to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor and water
01/30/2003US20030019841 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
01/29/2003CN1393418A Method for supplying fluoric acid
01/23/2003US20030015498 Contacting resinous material with a lactone solvent swell composition to condition the resinous material for porous texturing with an etchant; and contacting the conditioned resinous material with an etchant
01/22/2003EP1276701A1 Etching pastes for inorganic surfaces
01/22/2003EP0835333B1 Pickling solution used for removing scales on iron-based alloys
01/22/2003CN1392215A Metal grinding liquid material, metal grinding liquid, its producing method and grinding method using it
01/21/2003US6508953 Slurry for chemical-mechanical polishing copper damascene structures
01/21/2003US6508952 Chemical mechanical abrasive composition for use in semiconductor processing
01/16/2003WO2001083844A3 Method for depositing metal and metal oxide films and patterned films
01/09/2003WO2003002688A1 Process for removing contaminant from a surface and composition useful therefor
01/03/2003WO2003000456A2 Method for carrying out local laser-induced etching of solid materials
01/02/2003EP1269527A1 Fluorinated solvent compositions containing hydrogen fluoride
12/2002
12/24/2002US6498110 Ruthenium silicide wet etch
12/11/2002CN1384400A Pattern etching agent of In-Sn oxide and LCD making process
12/11/2002CN1384158A Resin material for decoration and sweller for deterging and eliminating the resin material
12/10/2002US6492309 Fluorinated solvent compositions containing hydrogen fluoride
12/05/2002WO2002089192A8 Method of wet etching an inorganic antireflection layer
12/05/2002US20020182386 Etching process for making electrodes
11/2002
11/28/2002WO2001088998A3 Etching process for making electrodes
11/21/2002WO2002092211A2 Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
11/13/2002EP1256126A1 Etching solution and method
11/13/2002EP1255797A1 Method for roughening copper surfaces for bonding to substrates
11/12/2002US6478834 Slurry for chemical mechanical polishing
11/07/2002WO2002089193A1 Method of wet etching a silicon and nitrogen containing material
11/07/2002WO2002089192A1 Method of wet etching an inorganic antireflection layer
11/07/2002US20020164888 Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same
10/2002
10/31/2002WO2002086192A1 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
10/31/2002WO2002018099A3 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
10/31/2002WO2002010480A3 Etching composition and use thereof with feedback control of hf in beol clean
10/31/2002US20020160608 Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition
10/29/2002US6471735 Slurry of abrasive particles, suspension medium, peroxygen compound, etching agent and an alkyl ammonium hydroxide; increased silicon oxide to silicon nitride polish rate selectivity
10/24/2002US20020155280 Liquid crystal polymers for flexible circuits
10/23/2002CN1375403A Dust-free blackboard and its making process
10/22/2002US6468951 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication
10/22/2002US6468913 Ready-to-use stable chemical-mechanical polishing slurries
10/17/2002US20020148998 Potassium hypochlorite, hydrofluoric acid and deionized water
10/08/2002US6461533 Etchant for silicon oxide and method
10/03/2002WO2002077120A1 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
10/03/2002US20020142619 Solution composition and process for etching silicon
10/01/2002US6458289 CMP slurry for polishing semiconductor wafers and related methods
09/2002
09/26/2002WO2002059230A3 Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride
09/26/2002US20020137646 Use in production of pure 1,1,3,3,3-pentafluoropropane
09/26/2002US20020134963 For removal of residues from integrated circuits; comprises a choline compound, water and an organic solvent
09/24/2002US6453914 Acid blend for removing etch residue
09/19/2002US20020132745 Non-corrosive cleaning composition for removing plasma etching residues
09/19/2002US20020130298 For removing a photoresist; for removing a residue of a semiconductor element generated in semiconductor treatment
09/19/2002US20020130105 Process for etching bismuth-containing oxide films
09/18/2002EP1240673A1 Method for raw etching silicon solar cells
09/12/2002WO2002071447A2 Ruthenium silicide wet etch
09/10/2002US6447695 Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices
09/10/2002US6447694 Composition for chemical mechanical polishing
09/10/2002US6447563 Chemical mechanical polishing slurry system having an activator solution
09/05/2002US20020123299 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structurs that include copper and tungsten and polishing methods
09/05/2002US20020123235 Ruthenium silicide wet etch
09/04/2002EP1236760A1 Solvent swell for texturing resinous material and desmearing and removing resinous material
09/04/2002EP0852615A4 Chemical mechanical polishing composition and process
09/03/2002US6444590 Semiconductor processing methods, methods of forming hemispherical grain polysilicon, methods of forming capacitors, and methods of forming wordlines
09/03/2002US6444140 Contain a proton source, e.g., a mineral acid, an oxidizer agent, e.g., hydrogen peroxide, an azole compound, and a molybdenum source.
08/2002
08/22/2002US20020115384 Fixed-abrasive chemical-mechanical planarization of titanium nitride
08/20/2002US6436834 Abrasion accelerator enhances the removal rate of a dielectric layer by chelation in either an acidic or a basic medium; methyl glycinate, glycinamide, aminoguanidine, semicarbazide, guanidine, urea, formamidine, acetamidine, formamide,
08/20/2002US6436809 Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices made using this method
08/15/2002US20020109122 Clean aqueous planarizing solution consists of an etchant selected from oxalic acid, ascorbic acid and phosphoric acid and a buffer
08/14/2002EP1230334A1 Non-corrosive cleaning composition for removing plasma etching residues
08/14/2002CN1364323A Polymerase alignes for organic TFT
08/08/2002US20020106977 Fixed-abrasive chemical-mechanical planarization of titanium nitride
08/08/2002US20020106975 Fixed-abrasive chemical-mechanical planarization of titanium nitride
08/08/2002US20020104268 Slurry for chemical mechanical polishing
08/07/2002CN1362467A Soaking solution and its prepn
08/01/2002WO2002059393A1 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
08/01/2002WO2002059230A2 Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride
08/01/2002US20020102923 Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it
08/01/2002CA2431591A1 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
07/2002
07/30/2002US6426294 Polishing conductive material film comprising copper or copper alloy using aqueous composition comprising pyridine-based carboxylic acid and acid having one carboxyl and one hydroxyl group or oxalic acid, abrasive grains and oxidizing agent
07/25/2002US20020095874 Slurry for chemical mechanical polishing
07/25/2002US20020095872 For polishing a metal film formed on an insulating film with a concave on a substrate
07/18/2002WO2002007205A3 Etching composition and use thereof for cleaning metallization layers
07/18/2002US20020093002 Chemical mechanical polishing slurry
07/16/2002US6419554 Removal of titanium nitride using etching or oxidation solutions
07/11/2002US20020090894 Method for polishing a semiconductor substrate member
07/10/2002CN1357586A Polishing composition and polishing method of substrate for memory and hard disk
07/09/2002US6417112 Removal of etch residues from integrated circuits with dielectric and copper material with water or solvents
07/04/2002US20020084441 Method for roughening copper surfaces for bonding to substrates
07/04/2002DE10162576A1 Ätzmittel und Ätzverfahren für Flüssigkristallanzeigevorrichtungen Etchant and etching processes for liquid crystal display devices
1 ... 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34