Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392) |
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03/13/2003 | WO2003022021A1 Liquid crystal polymers for flexible circuits |
03/13/2003 | US20030049938 Method of wet etching low dielectric constant materials |
03/13/2003 | US20030047710 Chemical-mechanical polishing |
03/11/2003 | US6531071 Iminocarboxylic acid etch retardant |
03/11/2003 | US6530968 Chemical mechanical polishing slurry |
03/06/2003 | US20030042465 Etching dielectrics using fluorohydrocarbon mixture |
03/04/2003 | US6527818 Excellent balance between chemical etching and mechanical polishing performance and aqueous dispersion for chemical mechanical polishing comprising an abrasive, water and a heteropolyacid |
02/27/2003 | WO2003016432A1 Method and composition to decrease iron sulfide deposits in pipe lines |
02/26/2003 | CN1399792A Method for etching bismuth-containing oxide films |
02/20/2003 | US20030036569 Do not readily protonate (even in aqueous solutions of low pH), commonly encountered in many extreme applications due to the very low basicity of the perfluorinated anion. |
02/19/2003 | EP1284023A2 Etching process for making electrodes |
02/19/2003 | CN1397488A Post-processing process for increasing specific surface area of carbon nanotube |
02/13/2003 | WO2003012169A1 Metal surface protection film forming agent and application thereof |
02/11/2003 | US6517738 Acid blend for removing etch residue |
02/06/2003 | WO2003010808A1 Method and apparatus for supplying tetrafluoroethylene gas to dry etching apparatus |
02/04/2003 | US6514425 Forming patterns on silicon dioxide films using plasma gases comprising acyclic fluoroethers, having short half-life; pollution control; integrated circuits |
01/30/2003 | US20030022801 Applying composition comprising at least one reducing agent for reducing ions of transition metal to a lower valence state, at least one pH adjusting agent, at least one metal corrosion inhibitor and water |
01/30/2003 | US20030019841 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases |
01/29/2003 | CN1393418A Method for supplying fluoric acid |
01/23/2003 | US20030015498 Contacting resinous material with a lactone solvent swell composition to condition the resinous material for porous texturing with an etchant; and contacting the conditioned resinous material with an etchant |
01/22/2003 | EP1276701A1 Etching pastes for inorganic surfaces |
01/22/2003 | EP0835333B1 Pickling solution used for removing scales on iron-based alloys |
01/22/2003 | CN1392215A Metal grinding liquid material, metal grinding liquid, its producing method and grinding method using it |
01/21/2003 | US6508953 Slurry for chemical-mechanical polishing copper damascene structures |
01/21/2003 | US6508952 Chemical mechanical abrasive composition for use in semiconductor processing |
01/16/2003 | WO2001083844A3 Method for depositing metal and metal oxide films and patterned films |
01/09/2003 | WO2003002688A1 Process for removing contaminant from a surface and composition useful therefor |
01/03/2003 | WO2003000456A2 Method for carrying out local laser-induced etching of solid materials |
01/02/2003 | EP1269527A1 Fluorinated solvent compositions containing hydrogen fluoride |
12/24/2002 | US6498110 Ruthenium silicide wet etch |
12/11/2002 | CN1384400A Pattern etching agent of In-Sn oxide and LCD making process |
12/11/2002 | CN1384158A Resin material for decoration and sweller for deterging and eliminating the resin material |
12/10/2002 | US6492309 Fluorinated solvent compositions containing hydrogen fluoride |
12/05/2002 | WO2002089192A8 Method of wet etching an inorganic antireflection layer |
12/05/2002 | US20020182386 Etching process for making electrodes |
11/28/2002 | WO2001088998A3 Etching process for making electrodes |
11/21/2002 | WO2002092211A2 Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor |
11/13/2002 | EP1256126A1 Etching solution and method |
11/13/2002 | EP1255797A1 Method for roughening copper surfaces for bonding to substrates |
11/12/2002 | US6478834 Slurry for chemical mechanical polishing |
11/07/2002 | WO2002089193A1 Method of wet etching a silicon and nitrogen containing material |
11/07/2002 | WO2002089192A1 Method of wet etching an inorganic antireflection layer |
11/07/2002 | US20020164888 Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same |
10/31/2002 | WO2002086192A1 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases |
10/31/2002 | WO2002018099A3 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods |
10/31/2002 | WO2002010480A3 Etching composition and use thereof with feedback control of hf in beol clean |
10/31/2002 | US20020160608 Copper-based metal polishing composition, method for manufacturing a semiconductor device, polishing composition, aluminum-based metal polishing composition, and tungsten-based metal polishing composition |
10/29/2002 | US6471735 Slurry of abrasive particles, suspension medium, peroxygen compound, etching agent and an alkyl ammonium hydroxide; increased silicon oxide to silicon nitride polish rate selectivity |
10/24/2002 | US20020155280 Liquid crystal polymers for flexible circuits |
10/23/2002 | CN1375403A Dust-free blackboard and its making process |
10/22/2002 | US6468951 Cleaning composition containing tetraalkylammonium salt and use thereof in semiconductor fabrication |
10/22/2002 | US6468913 Ready-to-use stable chemical-mechanical polishing slurries |
10/17/2002 | US20020148998 Potassium hypochlorite, hydrofluoric acid and deionized water |
10/08/2002 | US6461533 Etchant for silicon oxide and method |
10/03/2002 | WO2002077120A1 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate |
10/03/2002 | US20020142619 Solution composition and process for etching silicon |
10/01/2002 | US6458289 CMP slurry for polishing semiconductor wafers and related methods |
09/26/2002 | WO2002059230A3 Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride |
09/26/2002 | US20020137646 Use in production of pure 1,1,3,3,3-pentafluoropropane |
09/26/2002 | US20020134963 For removal of residues from integrated circuits; comprises a choline compound, water and an organic solvent |
09/24/2002 | US6453914 Acid blend for removing etch residue |
09/19/2002 | US20020132745 Non-corrosive cleaning composition for removing plasma etching residues |
09/19/2002 | US20020130298 For removing a photoresist; for removing a residue of a semiconductor element generated in semiconductor treatment |
09/19/2002 | US20020130105 Process for etching bismuth-containing oxide films |
09/18/2002 | EP1240673A1 Method for raw etching silicon solar cells |
09/12/2002 | WO2002071447A2 Ruthenium silicide wet etch |
09/10/2002 | US6447695 Aqueous dispersion composition for chemical mechanical polishing for use in manufacture of semiconductor devices |
09/10/2002 | US6447694 Composition for chemical mechanical polishing |
09/10/2002 | US6447563 Chemical mechanical polishing slurry system having an activator solution |
09/05/2002 | US20020123299 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structurs that include copper and tungsten and polishing methods |
09/05/2002 | US20020123235 Ruthenium silicide wet etch |
09/04/2002 | EP1236760A1 Solvent swell for texturing resinous material and desmearing and removing resinous material |
09/04/2002 | EP0852615A4 Chemical mechanical polishing composition and process |
09/03/2002 | US6444590 Semiconductor processing methods, methods of forming hemispherical grain polysilicon, methods of forming capacitors, and methods of forming wordlines |
09/03/2002 | US6444140 Contain a proton source, e.g., a mineral acid, an oxidizer agent, e.g., hydrogen peroxide, an azole compound, and a molybdenum source. |
08/22/2002 | US20020115384 Fixed-abrasive chemical-mechanical planarization of titanium nitride |
08/20/2002 | US6436834 Abrasion accelerator enhances the removal rate of a dielectric layer by chelation in either an acidic or a basic medium; methyl glycinate, glycinamide, aminoguanidine, semicarbazide, guanidine, urea, formamidine, acetamidine, formamide, |
08/20/2002 | US6436809 Method of manufacturing semiconductor devices, etching compositions for manufacturing semiconductor devices, and semiconductor devices made using this method |
08/15/2002 | US20020109122 Clean aqueous planarizing solution consists of an etchant selected from oxalic acid, ascorbic acid and phosphoric acid and a buffer |
08/14/2002 | EP1230334A1 Non-corrosive cleaning composition for removing plasma etching residues |
08/14/2002 | CN1364323A Polymerase alignes for organic TFT |
08/08/2002 | US20020106977 Fixed-abrasive chemical-mechanical planarization of titanium nitride |
08/08/2002 | US20020106975 Fixed-abrasive chemical-mechanical planarization of titanium nitride |
08/08/2002 | US20020104268 Slurry for chemical mechanical polishing |
08/07/2002 | CN1362467A Soaking solution and its prepn |
08/01/2002 | WO2002059393A1 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
08/01/2002 | WO2002059230A2 Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride |
08/01/2002 | US20020102923 Polishing composition and polishing method for polishing a substrate to be used for a memory hard disk employing it |
08/01/2002 | CA2431591A1 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride |
07/30/2002 | US6426294 Polishing conductive material film comprising copper or copper alloy using aqueous composition comprising pyridine-based carboxylic acid and acid having one carboxyl and one hydroxyl group or oxalic acid, abrasive grains and oxidizing agent |
07/25/2002 | US20020095874 Slurry for chemical mechanical polishing |
07/25/2002 | US20020095872 For polishing a metal film formed on an insulating film with a concave on a substrate |
07/18/2002 | WO2002007205A3 Etching composition and use thereof for cleaning metallization layers |
07/18/2002 | US20020093002 Chemical mechanical polishing slurry |
07/16/2002 | US6419554 Removal of titanium nitride using etching or oxidation solutions |
07/11/2002 | US20020090894 Method for polishing a semiconductor substrate member |
07/10/2002 | CN1357586A Polishing composition and polishing method of substrate for memory and hard disk |
07/09/2002 | US6417112 Removal of etch residues from integrated circuits with dielectric and copper material with water or solvents |
07/04/2002 | US20020084441 Method for roughening copper surfaces for bonding to substrates |
07/04/2002 | DE10162576A1 Ätzmittel und Ätzverfahren für Flüssigkristallanzeigevorrichtungen Etchant and etching processes for liquid crystal display devices |