Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
11/2006
11/21/2006US7138364 Cleaning gas and etching gas
11/21/2006US7138342 Combined chemical cleaning and etching of parts made of aluminum or alloys by contacting with a solution of phosphoric acid, hydrogen fluoride, sulfamic acid, glycol ether, and water; periodically restoring etching rate by adding HF; adding sufficient sulfamic acid to prevent the formation of scale
11/21/2006US7138072 making lubricating polishing solution by mixing nonabrasive solutions containing water and ammonia, with homopolymers and copolymers of acrylic acid crosslinked with polyoxyalkylene glycols
11/16/2006WO2006120343A2 Method for the surface treatment of a metallic or fibrous material
11/16/2006WO2006120342A2 Method for the treatment of a material other than the human body
11/16/2006US20060255316 Etch solution for selectively removing silicon
11/16/2006US20060255315 Selective removal chemistries for semiconductor applications, methods of production and uses thereof
11/16/2006US20060255314 Polishing slurry and method of reclaiming wafers
11/16/2006US20060255015 Surface modified colloidal abrasives, including stable bimetallic surface coated silica sols for chemical mechanical planarization
11/15/2006EP1720956A1 Etched dielectric film in microfluidic devices
11/15/2006EP1558697B1 Fluorinated surfactants for buffered acid etch solutions
11/14/2006US7135413 Cleaning solution for removing damaged portion of ferroelectric layer and cleaning method using the same
11/09/2006US20060249482 Chemical mechanical polishing compositions for step-ll copper line and other associated materials and method of using same
11/09/2006US20060249395 Process and composition for electrochemical mechanical polishing
11/09/2006US20060249394 Process and composition for electrochemical mechanical polishing
11/08/2006EP1719121A1 Etched dielectric film in hard disk drives
11/08/2006EP1299489B1 Cmp polishing composition for metal
11/02/2006US20060243702 chemical mechanical polishing (CMP) copper films via slurry of polyvinylpyrrolidone, oxidizing agent, protective film-forming agent containing complexing agent (containing quinaldinic acid, quinolinic acid, and alkylbenzene sulfonate) for forming water-insoluble complex, and colloidal sol
10/2006
10/26/2006US20060240670 Etching of algainassb
10/26/2006US20060237392 Polymer remover
10/18/2006CN1280381C Oil-keeping treating agent, oil-keeping treating method and treated colck and watch by the same method
10/12/2006WO2006107176A1 Etching solutions
10/12/2006US20060228890 Cleaning solution and method of forming a metal pattern for a semiconductor device using the same
10/12/2006US20060226125 Chemical-mechanical polishing (CMP) slurry and method of planarizing computer memory disk surfaces
10/12/2006US20060226122 Selective wet etching of metal nitrides
10/12/2006US20060226115 surface treatment with adhesion promoters, then with acid resistance promoters, and with post-dip solutions, to form surfaces suitable for subsequent multilayer lamination; printed circuits having bonding strength
10/11/2006CN1844238A Solvent-free impregnating resin for vacuum pressure impregnation of high voltage motor
10/11/2006CN1844237A Solvent-free impregnating resin and its preparation process and use
10/11/2006CN1278975C Compositions for removing etching residue and use thereof
10/10/2006US7118686 Slurry for use in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
10/10/2006US7118685 for polishing a surface comprising an insulating layer and a metal layer; comprising a compound having six or more carbon atoms and a structure in which each of two or more adjacent carbon atoms has a hydroxyl group in a molecule, and water
10/05/2006WO2006103751A1 Copper etchant and method of etching
10/03/2006US7115212 Method for etching
09/2006
09/28/2006US20060216939 Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using the same
09/28/2006US20060213868 Low-dishing composition and method for chemical-mechanical planarization with branched-alkylphenol-substituted benzotriazole
09/26/2006US7112289 Etchants containing filterable surfactant
09/20/2006EP1230334B1 Non-corrosive cleaning composition for removing plasma etching residues
09/20/2006CN1276124C Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
09/20/2006CN1276051C Aqueous dispersion for chemical/mechanical polishing
09/19/2006US7108795 surface treatment with adhesion promoters, then with acid resistance promoters, and with post-dip solutions, to form surfaces suitable for subsequent multilayer lamination; printed circuits having bonding strength
09/14/2006US20060205219 Compositions and methods for chemical mechanical polishing interlevel dielectric layers
09/14/2006US20060205218 Compositions and methods for chemical mechanical polishing thin films and dielectric materials
09/14/2006US20060201914 Chemical mechanical polishing aqueous dispersion, chemical mechanical polishing method, and kit for preparing chemical mechanical polishing aqueous dispersion
09/14/2006US20060201913 Methods and compositions for removing Group VIII metal-containing materials from surfaces
09/07/2006US20060199394 Cupric chloride solution and triazole compound; capable of forming an etching-inhibiting coating; nonuniform irregularities formed on the side wall of the circuit pattern by the etching improves the adhesion between the circuit pattern and an insulating resin layer covering the circuit pattern
09/07/2006US20060197055 Slurry for CMP, polishing method and method of manufacturing semiconductor device
09/07/2006US20060197054 CMP abrasive, liquid additive for CMP abrasive and method for polishing substrate
09/07/2006US20060196850 Polishing slurry composition and method of using the same
09/06/2006CN1273872C Hydrazine-free etching liquid
09/05/2006US7101808 Chromate-free method for surface etching of stainless steel
09/05/2006US7101492 Fluorinated surfactants for aqueous acid etch solutions
08/2006
08/31/2006US20060191869 Method for roughening copper surfaces for bonding to substrates
08/29/2006US7098137 Micro corner cube array, method of making the micro corner cube array, and display device
08/29/2006US7097783 Method for inspecting a titanium-based component
08/24/2006US20060189148 Transistor having a metal nitride layer pattern, etchant and methods of forming the same
08/24/2006US20060189141 Solution for etching copper surfaces and method of depositing metal on copper surfaces
08/24/2006US20060186373 Polishing medium for chemical-mechanical polishing, and polishing method
08/24/2006US20060186372 For planarizing the surface of a substrate, storage stability
08/22/2006US7094696 Method for TMAH etching of CMOS integrated circuits
08/17/2006WO2006031250A3 Selective high dielectric constant material etchant
08/17/2006US20060183297 Etching solution for removal of oxide film, method for preparing the same, and method of fabricating semiconductor device
08/17/2006US20060180788 an aqueous fluid comprising an oxidizer that produces oxygen-containing free radicals when contacted with an activator comprising oxides of iron or copper coated with tin, and abrasive particles comprising alumina or alumina-coated silica, used for chemical mechanical polishing (cmp)
08/17/2006US20060180787 Cerium oxide abrasive and method of polishing substrates
08/16/2006EP1689825A1 Removal of mems sacrificial layers using supercritical fluid/chemical formulations
08/16/2006CN1269991C Method for depositing metal and metal oxide films and patterned films
08/15/2006US7091164 Shallow channel isolation; mixture of aqueous solutions and abrasive
08/15/2006US7090786 abraisive ceria particles; 2-bromo-2-nitro-1,3-propanediol, 2-bromo-2-nitro-1, 3-butanediol, 2,2-dibromo-2-nitroethanol, or 2,2-dibromo-3-nitrilopropionamide; polypotassium or ammonium acrylate, ammonium citrate or ammonium dodecylbenzenesulfonate; storage stability; effective in neutral pH ranges
08/10/2006WO2005104214A3 Composition useful for removal of bottom anti-reflection coatings from patterned ion-implanted photoresist wafers
08/10/2006US20060178282 Process for production of etching or cleaning fluids
08/10/2006US20060175298 Method and composition for polishing a substrate
08/10/2006US20060175295 Abrasive partilcle for chemical mechanical polishing
08/09/2006EP1687831A1 Functional paste
08/09/2006CN1268975C Pattern etching agent of In-Sn oxide and LCD making process
08/08/2006US7087188 Abrasives for chemical mechanical polishing
08/08/2006US7087187 Meta oxide coated carbon black for CMP
08/03/2006WO2006081470A1 Method and composition for polishing a substrate
08/03/2006WO2006081149A2 Novel polishing slurries and abrasive-free solutions having a multifunctional activator
08/03/2006US20060169674 Method and composition for polishing a substrate
08/03/2006US20060169667 Etching liquid for controlling silicon wafer surface shape and method for manufacturing silicon wafer using the same
08/01/2006US7083741 Process and device for the wet-chemical treatment of silicon
07/2006
07/27/2006US20060163531 slurries containing hydrogen peroxide as an oxidizer and glycine as a corrosion inhibitor, used for planishing semiconductors
07/27/2006US20060163530 an acidic mixtures of oxidizers, complexing agents, water soluble ammonium salts of acrylic polymers, abrasives and water, used for chemical mechanical polishing barrier metals of integrated circuits
07/27/2006US20060163208 Photoresist stripping composition and methods of fabricating semiconductor device using the same
07/27/2006US20060163206 Novel polishing slurries and abrasive-free solutions having a multifunctional activator
07/26/2006CN1807317A Tempering glass lid with ornament pattern
07/20/2006WO2006076392A2 Polishing slurries and methods for chemical mechanical polishing
07/20/2006US20060157671 Slurry for use in metal-chemical mechanical polishing and preparation method thereof
07/20/2006DE102005007743A1 Druckfähiges Medium zur Ätzung von Siliziumdioxid- und Siliziumnitridschichten Printable medium for etching silicon dioxide and silicon nitride layers
07/19/2006CN1803964A Materials for polishing liquid for metal, polishing liquid for metal, method for preparation thereof and polishing method using same
07/19/2006CN1265435C Cleaning gas
07/19/2006CN1264949C Process for removing contaminant from a surface and composition useful therefor
07/13/2006WO2006073896A2 Selective surface texturing through the use of random application of thixotropic etching agents
07/13/2006US20060151434 Selective surface texturing through the use of random application of thixotropic etching agents
07/12/2006CN1802250A Compositions and methods for darkening and imparting corrosion-resistant properties to zinc or other active metals
07/06/2006US20060144825 Dual reduced agents for barrier removal in chemical mechanical polishing
06/2006
06/29/2006US20060138087 Copper containing abrasive particles to modify reactivity and performance of copper CMP slurries
06/27/2006US7067466 Cleaning composition useful in semiconductor integrated circuit fabrication
06/27/2006US7067465 Aqueous solutions of phosphoric acid and another acid; removal residues
06/22/2006WO2006065274A2 Colloidal silica based chemical mechanical polishing slurry
06/22/2006US20060131753 Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
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