Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
10/2003
10/22/2003CN1451031A Method for roughening copper surfaces for bonding to substrates
10/21/2003US6635186 Chemical mechanical polishing composition and process
10/15/2003EP1352109A1 Composition for chemical mechanical planarization of copper, tantalum and tantalum nitride
10/14/2003US6632377 Chemical-mechanical planarization of metallurgy
10/08/2003EP1350807A1 Etchant for thermoplastic polyimide resin
10/08/2003CN1447754A Compsns. for cleaning organic and plasma etched residues for semiconductor devices
10/08/2003CN1447401A Mfg. method of semiconductor device
10/08/2003CN1446658A Method and appts. for mfg. micro bit by using exposure liquid
10/07/2003US6630433 Oxidizing reactant selected from ammonium persulfate, hydrogen peroxide, nitric acid, co-reactant selected from phosphoric acid, sulfuric acid, nitric acid, oxalic acid, acetic acid, organic acids, additives
10/07/2003US6630074 Etching composition and use thereof
10/02/2003WO2003081658A1 Etchant composition
10/02/2003US20030186497 Methods of polishing, interconnect-fabrication, and producing semiconductor devices
10/02/2003US20030186494 Thin films and methods for the preparation thereof
09/2003
09/30/2003US6627546 Process for removing contaminant from a surface and composition useful therefor
09/23/2003US6624087 Etchant for patterning indium tin oxide and method of fabricating liquid crystal display device using the same
09/18/2003WO2003077622A1 Liquid crystal polymers for flexible circuits
09/18/2003US20030176068 Chemical mechanical polishing composition and process
09/16/2003US6620738 Etchant and method for fabricating a semiconductor device using the same
09/10/2003CN1441017A Chemical and mechanical polishing size and chemical and mechanical polishing method using said size
09/04/2003US20030166381 Chemical mechanical polishing slurry and chemical mechanical polishing method using the same
09/04/2003US20030166338 CMP slurry for metal and method for manufacturing metal line contact plug of semiconductor device using the same
09/04/2003US20030165412 Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP process
08/2003
08/28/2003US20030162481 Chemical mechanical polishing of dual orientation polycrystalline materials
08/28/2003US20030160208 Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water
08/28/2003US20030160026 Etching pastes for inorganic surfaces
08/27/2003EP1337601A1 Slurry for chemical-mechanical polishing copper damascene structures
08/27/2003CN1439060A Method for depositing metal and metal oxide films and patterned films
08/27/2003CN1119700C Use of etching solution in etching polyimide film
08/27/2003CN1119385C Gas for removing deposit and removal method using same
08/21/2003WO2003069659A1 Cleaning gas and etching gas
08/21/2003WO2002004573A3 Ready-to-use stable chemical-mechanical polishing slurries
08/21/2003US20030157809 Method for TMAH etching of CMOS integrated circuits
08/21/2003US20030157034 Dental acid etchant composition and method of use
08/20/2003EP0892840B1 A composition for cleaning and etching electronic display and substrate
08/14/2003US20030153476 Aliphatic alcohol having 4 or fewer carbons and having an amino group or an imino group and a hydroxyl group in a molecular thereof, and a tetraalkyl ammonium hydroxide aqueous solution
08/13/2003CN1436225A Polishing composition for metal CMP
08/13/2003CN1435391A Method for production of mat glass by horizontally placing process
08/07/2003US20030148627 Method for removing contamination and method for fabricating semiconductor device
08/07/2003US20030146404 Using fluorinated adjuvant
08/06/2003EP1333477A2 Use of fluorinated additives in the etching or polishing of integrated circuits
08/05/2003US6602117 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
07/2003
07/31/2003WO2003063205A2 Poly(organosiloxane) materials and methods for hybrid organic-inorganic dielectrics for integrated circuit applications
07/31/2003US20030143846 Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon- containing compounds
07/24/2003US20030138984 Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layers
07/24/2003US20030136755 Etched metal oxide film
07/16/2003CN1429873A Chemical mechanical polishing slurry for metal and method for preparing metal wire contact plug of semiconductor device by the slurry
07/15/2003US6593282 Cleaning solutions for semiconductor substrates after polishing of copper film
07/15/2003US6592776 Imidazole, benzotriazole, benzimidiazole or benzothiazole film-forming agent and such as uriedopropyltrimethoxysilane; reducing defects
07/10/2003WO2003056616A1 A chemistry for etching quaternary interface layers on ingaasp mostly formed between gaas and inxga(1-x)p layers
07/10/2003US20030129424 Etching process for making electrodes
07/09/2003CN1429409A Etching process for making electrodes
07/09/2003CN1428827A Polishing method for base copper-layer
07/09/2003CN1113956C Rinsing composition
07/03/2003US20030124862 Method of polishing copper layer of substrate
07/03/2003US20030124861 Method for manufacturing metal line contact plug semiconductor device
07/03/2003US20030124779 Fabricating method of polycrystalline silicon thin film transistor
07/01/2003US6585786 Slurry for chemical mechanical polishing
07/01/2003US6585568 Chemical mechanical polishing slurry
06/2003
06/26/2003US20030119332 Method for raw etching silicon solar cells
06/25/2003EP1320875A1 Gas compositions for cleaning the interiors of reactors as well as for etching films of silicon-containing compounds
06/25/2003CN1426381A Etching pastes for inorganic surfaces
06/19/2003WO2002004233A8 Compositions for cleaning organic and plasma etched residues for semiconductor devices
06/10/2003US6576554 Slurry for CMP, method of forming thereof and method of manufacturing semiconductor device including a CMP process
06/05/2003WO2003046968A1 Production method for silicon wafer and silicon wafer and soi wafer
06/04/2003CN1421906A Etching agent
05/2003
05/30/2003WO2003000456A3 Method for carrying out local laser-induced etching of solid materials
05/30/2003WO2002092211A3 Bis (perfluoroalkanesulfonyl) imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
05/29/2003US20030100191 Etching liquid
05/29/2003US20030098434 Method of fabricating a copper damascene structure
05/28/2003EP1314194A2 Slurry for use with fixed-abrasive polishing pads in polishing semiconductor device conductive structures that include copper and tungsten and polishing methods
05/28/2003CN1420080A Method for producing carbonyl fluoride
05/22/2003US20030096500 Process for removing contaminant from a surface and composition useful therefor
05/22/2003US20030095911 Process for producing carbonyl difluoride
05/22/2003US20030094434 Passivation for cleaning a material
05/15/2003US20030092271 Shallow trench isolation polishing using mixed abrasive slurries
05/15/2003US20030089880 Etching a titanium material and silicon oxide with hydrogen chloride, ammonium fluoride and water
05/15/2003DE20303815U1 Silicon etching composition used in semiconductor industry contains hydrogen fluoride and chlorine
05/14/2003CN1417383A Etchant and substrate with etched copper wire array
05/13/2003US6562727 Methods and compositions for removal of anti-reflective layers using fluorine containing compounds, oxidants, and water
05/13/2003US6562719 Solution which contains an oxidizer, phosphoric acid, organic acid, a chemical to form inhibition layer, and water.
05/01/2003WO2003035797A1 Aqueous cleaning composition containing copper-specific corrosion inhibitor for cleaning inorganic residues on semiconductor substrate
04/2003
04/29/2003US6555510 Bis(perfluoroalkanesulfonyl)imides and their salts as surfactants/additives for applications having extreme environments and methods therefor
04/24/2003WO2003034504A1 Combined etching and doping substances
04/24/2003US20030078173 Post chemical mechanical polishing cleaning formulation of an organic amine, a fluoride source and 70-98% water
04/23/2003EP1303575A1 Liquid crystal polymers for flexible circuits
04/16/2003CN1411612A Method for raw etching silicon solar cells
04/16/2003CN1410239A Manufacturing method of antiskid brick
04/10/2003WO2002071447A3 Ruthenium silicide wet etch
04/10/2003DE10146888C1 Verfahren zum Ätzen einer Schicht in einem Graben und Verfahren zur Herstellung eines Grabenkondensators A method for etching a layer in a trench, and method for manufacturing a capacitor grave
04/09/2003EP1299489A1 Cmp polishing composition for metal
04/03/2003US20030064596 Method of polishing a semiconductor wafer surface
04/03/2003US20030064591 Method of etching a layer in a trench and method of fabricating a trench capacitor
04/03/2003US20030062316 Method and composition to decrease iron sulfide deposits in pipe lines
04/01/2003US6540930 Use of perfluoroketones as vapor reactor cleaning, etching, and doping gases
03/2003
03/27/2003US20030057183 Method of fabricating thin liquid crystal display device
03/26/2003EP1295320A2 Process for etching silicon wafers
03/25/2003US6537563 Dental acid etchant composition and method of use
03/25/2003US6537381 Method for cleaning and treating a semiconductor wafer after chemical mechanical polishing
03/19/2003EP1292718A2 Method for depositing metal and metal oxide films and patterned films
03/18/2003US6534467 Azeotrope-like composition of 1,2,2-trichloro-1,3,3,3-tetrafluoropropane and hydrogen fluoride
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