Patents for C09K 13 - Etching, surface-brightening or pickling compositions (3,392)
06/2006
06/22/2006US20060131277 comprises hydrofluoric acid (buffered), ammonium fluoride, potassium fluoride, sodium fluoride, ethylene glycol, and water, for removal of tantalum or tantalum nitride; semiconductors, photoresists
06/22/2006US20060131275 Selective slurry for chemical mechanical polishing
06/15/2006US20060127653 Chemical etching of polycarbonate films and related applications
06/15/2006US20060124598 Difluoride composition, method of preparation, and use for frosting glass
06/15/2006US20060124596 Thinner composition, method of preparing the same and method of recovering the same
06/15/2006US20060124594 Chemical mechanical polishing (CMP) slurries and CMP methods using and making the same
06/15/2006US20060124593 Colloidal silica based chemical mechanical polishing slurry
06/15/2006US20060124592 Chemical mechanical polish slurry
06/15/2006US20060124591 Cerium oxide, acetylene compound, and water; flattening dielectrics; semiconductors
06/15/2006US20060124590 Using aqueous solution of potassium hydroxide and 0.1-0.5 g/L of diethylenetriamine pentaacetic acid as a scavenger and decontaminant for iron, nickel and copper; an etching method for etching a silicon wafer with a resistivity of no more than1 Omega *cm using the etching liquid; cost efficiency
06/15/2006US20060124586 Rinse liquid for lithography and method for forming resist pattern using same
06/14/2006EP1669430A1 Bifluorinated composition , method of preparation and use for roughening glass
06/14/2006CN1788070A Polishing fluid for metal and polishing Method
06/13/2006US7060634 Materials and methods for forming hybrid organic-inorganic dielectric materials for integrated circuit applications
06/13/2006US7059941 Using amine; polishing ratio of dielectric to stopper film; removing sedimentation from silicon
06/10/2006CA2528507A1 Difluoride composition, method of preparation and use for frosting glass
06/08/2006US20060118760 Slurry composition and methods for chemical mechanical polishing
06/08/2006US20060118759 Etching pastes for titanium oxide surfaces
06/08/2006US20060118524 Cerium oxide abrasive and method of polishing substrates
06/08/2006US20060118522 Etching composition and use thereof with feedback control of HF in BEOL clean
06/06/2006US7056829 Polishing composition for semiconductor wafers
06/01/2006US20060113283 Polishing composition for a semiconductor substrate
05/2006
05/30/2006US7052627 Mixture of fluoride, or hydrogen fluoride salt, acid and solvent
05/26/2006WO2006055116A1 Flavored hemostatic and acid etching compositons
05/26/2006WO2006054996A1 Selective removal chemistries for semiconductor applications, methods of production and uses thereof
05/26/2006WO2005022592A3 Novel aqueous based metal etchant
05/25/2006US20060110924 Abrasive-free chemical mechanical polishing compositions and methods relating thereto
05/25/2006US20060110923 Barrier polishing solution
05/25/2006US20060108326 Polishing composition and method for high silicon nitride to silicon oxide removal rate ratios
05/25/2006US20060108325 Polishing process for producing damage free surfaces on semi-insulating silicon carbide wafers
05/24/2006CN1257313C Etchant and substrate with etched copper wire array
05/18/2006US20060105579 Etchant for etching metal wiring layers and method for forming thin film transistor by using the same
05/18/2006US20060102872 Polycarboxylate and polyamino chelating agents, benzotriazole and benzoylimidazole corrosion inhibitors, a suppresor, a solvent, and inorganic acid based electrolyte; minimal damage to the substrate during planarization
05/18/2006US20060102586 High selectivity BPSG to TEOS etchant
05/17/2006EP1576072A4 Aqueous phosphoric acid compositions for cleaning semiconductor devices
05/17/2006CN1772842A Etching solution and method for removing low-k dielectric layer
05/11/2006US20060099814 Chemical-mechanical polishing mixture of a cationic abrasive, a cationic acrylamide-diallyldimethylammonium chloride copolymer and water; pH of 6 or less
05/11/2006US20060097220 Etching solution and method for removing low-k dielectric layer
05/11/2006US20060097219 High selectivity slurry compositions for chemical mechanical polishing
05/11/2006US20060097218 Etchants containing filterable surfactant
05/09/2006US7041232 Selective etching of substrates with control of the etch profile
05/09/2006US7041164 Dental etch solutions
05/04/2006US20060094614 Non-corrosive cleaning composition for removing plasma etching residues
05/04/2006US20060091355 Solution and method for removing ashing residue in Cu/low-k multilevel interconnection structure
05/02/2006US7037852 For removing a photoresist pattern from an underlying layer; for manufacturing a semiconductor device
05/02/2006US7037451 Forming the abrasive silica*alumina particles in the aerosol stream, heating; use for chemical mechanical polishing integrated circuit; fine particles coupling with coatings by silanes, narrow particle size distribution, unagglomerated
04/2006
04/27/2006US20060089000 Material and process for etched structure filling and planarizing
04/27/2006DE10248481B4 Verfahren und Vorrichtung zur nasschemischen Behandlung von Silicium Method and apparatus for wet-chemical treatment of silicon
04/26/2006CN1253527C Etching liquid composition
04/25/2006US7033943 Etching solution, etching method and method for manufacturing semiconductor device
04/25/2006US7033942 Chemical mechanical polishing composition and process
04/19/2006CN1252802C Method for etching bismuth-containing oxide films
04/18/2006US7030067 For phosphate ester hydraulic fluids used in conditions under which hydrocarbon surfactants would degrade
04/18/2006US7030034 Methods of etching silicon nitride substantially selectively relative to an oxide of aluminum
04/18/2006US7029509 Performance; efficiency
04/13/2006US20060075688 Polishing composition and method of polishing with the same
04/12/2006EP1646091A2 Etching liquid composition
04/12/2006CN1759472A Process for production of etching or cleaning fluids
04/12/2006CN1757699A Metal CMP slurry compositions that favor mechanical removal of metal oxides with reduced susceptibility to micro-scratching
04/12/2006CN1250675C Method and apparatus for cleaning semiconductor substrates after polishing of copper film
04/05/2006EP1643817A1 Etching solution, method of etching and printed wiring board
04/05/2006EP1642949A1 Polishing composition and method of polishing with the same
04/04/2006US7022255 Chemical-mechanical planarization composition with nitrogen containing polymer and method for use
04/04/2006US7022254 Chromate-free method for surface etching of titanium
03/2006
03/30/2006WO2005096747A3 Highly selective silicon oxide etching compositions
03/30/2006US20060068597 Method for texturing surfaces of silicon wafers
03/30/2006US20060068589 Selective barrier slurry for chemical mechanical polishing
03/28/2006US7018924 CMP slurry compositions for oxide films and methods for forming metal line contact plugs using the same
03/28/2006US7018560 comprises a corrosion inhibitor for limiting removal of an interconnect metal with an acidic pH; includes an organic-containing ammonium salt
03/23/2006WO2006031250A2 Selective high dielectric constant material etchant
03/23/2006US20060060568 Slurry compositions, methods of preparing slurry compositions, and methods of polishing an object using slurry compositions
03/22/2006EP1171379B1 Method for producing high-purity solutions using gaseous hydrogen fluoride
03/22/2006CN1749354A Etchant composition for indium oxide layer and etching method using the same
03/22/2006CN1246730C Component and method for producing electrophoretic display device
03/16/2006WO2006027332A1 Method for selective etching
03/16/2006US20060057801 Thin films and methods for the preparation thereof
03/16/2006US20060054597 Wet etchant composition and method for etching HfO2 and ZrO2
03/16/2006US20060054595 Selective hafnium oxide etchant
03/15/2006EP1633675A1 Method for producing highly pure solutions using gaseous hydrogen fluoride
03/15/2006EP1572833A4 Supercritical carbon dioxide/chemical formulation for ashed and unashed aluminum post-etch residue removal
03/09/2006US20060049382 Metal surface protective film forming agent and use thereof
03/09/2006US20060049143 Polishing composition and polishing method using the same
03/09/2006US20060049132 Etchant composition and the use thereof
03/08/2006CN1244719C Semiconductor stripping composition containing 1,3-dicarbonyl compounds
03/07/2006US7008554 Barrier to prevent copper diffusion; polishing using reducing agent
03/02/2006US20060043332 Etchant composition for indium oxide layer and etching method using the same
03/02/2006US20060042653 Method of forming contact hole
03/01/2006EP1062682B1 Selective silicon oxide etchant formulation including fluoride salt, chelating agent and glycol solvent
02/2006
02/23/2006US20060037943 Integrated circuits ; using chelate compounds as etchants; overcoating dielectric with patterned mask
02/23/2006US20060037942 Slurry, chemical mechanical polishing method using the slurry, and method of forming a surface of a capacitor using the slurry
02/22/2006CN1738928A Compositions for copper, tantalum and tantalum nitride chemical mechanical method complanation
02/22/2006CN1243071C Metal grinding liquid material, metal grinding liquid, its producing method and grinding method using it
02/22/2006CN1243034C Heat resistant impregnant resin and its preparing method and use
02/21/2006US7001874 Non-corrosive cleaning composition for removing plasma etching residues
02/21/2006US7001838 Method of wet etching an inorganic antireflection layer
02/21/2006US7001533 Chromate-free method for surface etching of aluminum and aluminum alloys
02/14/2006US6998066 and a chelating agent forming a chemical mechanical polishing emulsion; chemical stability, improved selectivity, corrosion inhibition, broad pH operating range
02/14/2006US6997781 Fixed-abrasive chemical-mechanical planarization of titanium nitride
02/09/2006US20060027534 Chemical mechanical machining for polishing surfaces such as semiconductors and oxidizers and/or abrasives
02/09/2006US20060027530 Etching gas, etching method and etching gas evaluation method
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