| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/07/2013 | US20130059124 Method of manufacturing carbon nanotube, single-crystal substrate for manufacturing carbon nanotube, and carbon nanotube |
| 03/06/2013 | EP2565928A1 Epitaxial substrate and method for producing epitaxial substrate |
| 03/06/2013 | EP2565907A1 Epitaxial substrate and method for producing epitaxial substrate |
| 03/06/2013 | EP2565906A1 Epitaxial substrate and process for producing epitaxial substrate |
| 03/06/2013 | CN202772112U Semiconductor device based on sapphire substrate |
| 03/06/2013 | CN102959682A Epitaxial growth substrate, semiconductor device, and epitaxial growth method |
| 03/06/2013 | CN102959141A Group iii nitride crystal growing method |
| 03/06/2013 | CN102959138A Single crystal diamond material |
| 03/06/2013 | CN102953118A Single crystal graphene pn node and preparation method thereof |
| 03/05/2013 | US8390101 High voltage switching devices and process for forming same |
| 02/28/2013 | WO2013027102A1 Deposition system having acces gates and related method |
| 02/28/2013 | WO2013027098A1 Deposition systems including a precursor gas furnace within a reaction chamber, and related methods |
| 02/28/2013 | WO2013027096A1 Direct liquid injection for halide vapor phase epitaxy systems and methods |
| 02/28/2013 | US20130052421 Monocrystalline epitaxially aligned nanostructures and related methods |
| 02/28/2013 | US20130049014 Epitaxial silicon carbide single crystal substrate and process for producing the same |
| 02/28/2013 | US20130049005 Devices having removed aluminum nitride sections |
| 02/28/2013 | US20130047918 Deposition systems including a precursor gas furnace within a reaction chamber, and related methods |
| 02/28/2013 | US20130047917 Direct liquid injection for halide vapor phase epitaxy systems and methods |
| 02/28/2013 | US20130047916 Vapor growth apparatus and vapor growth method |
| 02/28/2013 | DE102012215135A1 Lichtemittierendes Bauelement aus einem Nitridhalbleiter und Verfahren zur Herstellung desselben Of a nitride semiconductor light emitting device and method of manufacturing the same |
| 02/28/2013 | DE102007027446B4 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based |
| 02/27/2013 | CN102945903A Semiconductor device and method of fabricating the same |
| 02/27/2013 | CN102943248A Electronic Indium Gallium Nitride n-InxGal-xN thin film and preparation thereof |
| 02/27/2013 | CN101800170B Method for producing group iii nitride semiconductor and template substrate |
| 02/27/2013 | CN101680114B Method for manufacturing gan-based nitride semiconductor self-supporting substrate |
| 02/27/2013 | CN101373731B Electrostatic chuck apparatus and temperature control method thereof |
| 02/26/2013 | US8382898 Methods for high volume manufacture of group III-V semiconductor materials |
| 02/26/2013 | US8382897 Process gas delivery for semiconductor process chambers |
| 02/21/2013 | WO2012164405A3 Introduction of an insulating buffer layer in multilayer with electro - optic layer |
| 02/21/2013 | US20130043442 Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template |
| 02/21/2013 | US20130042803 Substrate Processing Apparatus and Method of Manufacturing Semiconductor Device |
| 02/21/2013 | US20130042801 Off-axis epitaxial lift off process |
| 02/20/2013 | EP2559791A1 Single-crystal substrate, single-crystal substrate having crystalline film, crystalline film, method for producing single-crystal substrate having crystalline film, method for producing crystalline substrate, and method for producing element |
| 02/20/2013 | CN202744657U Dust collector for granular polycrystalline silicon |
| 02/14/2013 | WO2013021606A1 Structure for growth of nitride semiconductor layer, stacked structure, nitride-based semiconductor element, light source, and manufacturing method for same |
| 02/14/2013 | US20130040103 Method of manufacturing single crystal 3c-sic substrate and single crystal 3c-sic substrate obtained from the manufacturing method |
| 02/14/2013 | US20130040095 Process of forming a crystal having a particular shape and the crystal formed by the process |
| 02/14/2013 | US20130036968 Film-forming apparatus and method |
| 02/13/2013 | EP2557205A1 Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by the process |
| 02/13/2013 | CN102933491A Method of graphene manufacturing |
| 02/13/2013 | CN102925969A Graphical silicon carbide (SiC) substrate |
| 02/13/2013 | CN102925968A Strain control method of nitride single crystal thin film |
| 02/13/2013 | CN102925875A Dual-mode system used for film growth and control method of dual-mode system |
| 02/13/2013 | CN102168309B Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping |
| 02/13/2013 | CN101812730B Preparation method of ultralong monocrystal beta-SiC nanowire metal-free catalyst |
| 02/12/2013 | US8372199 Bulk GaN and AlGaN single crystals |
| 02/12/2013 | US8372197 Substrate temperature accuracy and temperature control flexibility in a molecular beam epitaxy system |
| 02/07/2013 | US20130032085 Plasma assisted hvpe chamber design |
| 02/07/2013 | US20130032084 Silicon wafers by epitaxial deposition |
| 02/06/2013 | EP2554719A1 Epitaxial substrate and method for manufacturing epitaxial substrate |
| 02/06/2013 | EP2554718A1 Method for producing single crystal 3c-sic substrate and resulting single-crystal 3c-sic substrate |
| 02/06/2013 | EP2553692A1 Domain-structured ferroic element, method and apparatus for generating and for controlling the electrical conductivity of domain walls at room temperature in the elements and applications of the element |
| 02/06/2013 | CN202717874U Control system for vapor phase epitaxy equipment for material growth |
| 02/06/2013 | CN102912315A Method for growing InN-base film material |
| 02/06/2013 | CN102181924B Growth method of graphene and graphene |
| 02/06/2013 | CN101167190B Diamond transistor and method of manufacture thereof |
| 02/05/2013 | US8368117 III-nitride materials including low dislocation densities and methods associated with the same |
| 02/05/2013 | US8366892 Graphite electrode |
| 02/05/2013 | US8366830 Susceptor apparatus for inverted type MOCVD reactor |
| 01/31/2013 | WO2013014920A1 Silicon carbide single crystal manufacturing device |
| 01/31/2013 | US20130029158 Process for producing epitaxial silicon carbide single crystal substrate and epitaxial silicon carbide single crystal substrate obtained by the same |
| 01/31/2013 | US20130025538 Methods and apparatus for deposition processes |
| 01/31/2013 | US20130025531 Methods for modifying crystallographic symmetry on the surface of a silicon wafer |
| 01/31/2013 | DE19943064B4 Verfahren zur epitaktischen Abscheidung von Atomen oder Molekülen aus einem Reaktivgas auf einer Abscheidungsoberfläche eines Substrats Process for epitaxial deposition of atoms or molecules from a reactive gas on a deposition surface of a substrate |
| 01/31/2013 | DE10392291B4 Energie-effizientes Verfahren zum Züchten von polykristallinem Silicium Energy-efficient method for growing of polycrystalline silicon, |
| 01/30/2013 | CN202705565U Gas concentration control device |
| 01/30/2013 | CN202705564U New light emitting diode (LED) epitaxial growth equipment |
| 01/30/2013 | CN102903653A Unloading device and unloading method for high-temperature grown wafer |
| 01/30/2013 | CN102903617A GaN substrate-based graphene CVD direct epitaxial growth method and manufactured device |
| 01/30/2013 | CN102903616A ZnO substrate-based graphene CVD direct epitaxial growth method and manufactured device |
| 01/30/2013 | CN102899719A Thin-film deposition system |
| 01/30/2013 | CN102899634A Hole type nitrogen-indium-gallium p-InxGa1-xN film and preparation thereof |
| 01/30/2013 | CN102037165B Method for producing nanostructures on metal oxide substrate, and thin film device |
| 01/29/2013 | US8360001 Process for deposition of semiconductor films |
| 01/29/2013 | CA2783898A1 Power supply with means for increasing a voltage |
| 01/24/2013 | WO2013011923A1 Sic epitaxial wafer and method for producing same, and device for producing sic epitaxial wafer |
| 01/24/2013 | US20130022773 Single-crystal substrate,single-crystal substrate having crystalline film,crystalline film,method for producing single-crystal substrate having crystalline film,method for producing crystlline substrate,and method for producing element |
| 01/24/2013 | DE102011108080A1 Gruppe-III-Nitrid-basierte Schichtenfolge, Bauelement und Verfahren zur Herstellung Group III-nitride based layer sequence component and methods for making |
| 01/23/2013 | CN102891072A Semiconductor equipment based on sapphire substrate |
| 01/22/2013 | US8357243 Method for testing group III-nitride wafers and group III-nitride wafers with test data |
| 01/22/2013 | US8357242 Crystalline film devices, apparatuses for and methods of fabrication |
| 01/19/2013 | CA2783075A1 Power supply arrangement for a reactor for producing polysilicon with a frequency converter |
| 01/17/2013 | WO2013007605A1 Single crystal diamond substrates for synthesis of single crystal diamond material |
| 01/17/2013 | WO2013007580A1 Gas inlet member of a cvd reactor |
| 01/17/2013 | US20130015414 AlxGa1-xN Crystal Substrate |
| 01/17/2013 | US20130014694 Method of growing semiconductor epitaxial thin film and method of fabricating semiconductor light emitting device using the same |
| 01/17/2013 | DE102011107657A1 Monolithische integrierte Halbleiterstruktur Monolithic integrated semiconductor structure |
| 01/16/2013 | EP2546866A1 Method of growing semiconductor epitaxial thin film and method of fabricating semiconductor light emitting device using the same |
| 01/16/2013 | EP2545582A2 Defect capping for reduced defect density epitaxial articles |
| 01/16/2013 | CN102879125A In-situ temperature testing device and method |
| 01/15/2013 | US8354618 Load chamber with dual heaters |
| 01/09/2013 | EP2543754A1 Semiconductor epitaxial substrate |
| 01/09/2013 | CN102867896A LED epitaxial structure and preparation method thereof |
| 01/09/2013 | CN102867859A Method and system for preparing two-color infrared detection material |
| 01/09/2013 | CN102861917A Preparation method of polycrystalline diamond compact covered by strong-combination chemical vapor deposition (CVD) diamond layer |
| 01/09/2013 | CN102347258B Base used for semiconductor epitaxial system |
| 01/08/2013 | US8349078 Method of forming nitride semiconductor epitaxial layer and method of manufacturing nitride semiconductor device |
| 01/08/2013 | US8349076 Method of fabricating GaN substrate |
| 01/06/2013 | CA2779221A1 Protective device for electrode holders in cvd reactors |
| 01/03/2013 | WO2013003609A1 Device and method for producing bulk single crystals |