Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
10/2014
10/07/2014US8852696 Method for vapor deposition
10/07/2014US8852343 Apparatus for crystal growth
10/07/2014US8852341 Methods for producing GaN nutrient for ammonothermal growth
10/02/2014WO2014157332A1 Method for manufacturing silicon carbide semiconductor substrate
10/02/2014WO2014156914A1 Method for processing group-iii nitride substrate and method for manufacturing epitaxial substrate
10/02/2014WO2014156394A1 Silicon carbide epitaxial wafer, method for manufacturing silicon carbide epitaxial wafer, device for manufacturing silicon carbide epitaxial wafer, and silicon carbide semiconductor element
10/02/2014US20140295136 SINGLE-CRYSTAL 4H-SiC SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME
10/02/2014US20140291694 Planar nonpolar group-iii nitride films grown on miscut substrates
10/02/2014DE102014205466A1 Einkristall-4H-SiC-Substrat und Verfahren zu seiner Herstellung Single crystal 4H-SiC substrate and process for its preparation
10/01/2014EP2784191A1 Low carbon group-III nitride crystals
09/2014
09/30/2014US8847279 Defect reduction using aspect ratio trapping
09/30/2014US8846501 Method for equipping an epitaxy reactor
09/30/2014US8845992 III-nitride single-crystal ingot, III-nitride single-crystal substrate, method of manufacturing III-nitride single-crystal ingot, and method of manufacturing III-nitride single-crystal substrate
09/30/2014US8845809 Scalable, high-throughput, multi-chamber epitaxial reactor for silicon deposition
09/25/2014WO2014148820A1 Two-dimensional large-area growth method for chalcogen compound, method for manufacturing cmos-type structure, film of chalcogen compound, electronic device comprising film of chalcogen compound, and cmos-type structure
09/25/2014US20140284547 Self-formation of high-density arrays of nanostructures
09/25/2014US20140283748 Semiconductor manufacturing apparatus and semiconductor wafer holder
09/25/2014US20140283736 Vapor phase growth apparatus and vapor phase growth method
09/25/2014DE112012003499T5 Depositionssystem mit Zugangstoren sowie Verfahren dafür Deposition system with access gates and method therefor
09/24/2014EP2781631A1 Vapor phase growth apparatus and vapor phase growth method
09/23/2014US8841221 MOCVD reactor having cylindrical gas inlet element
09/23/2014US8841177 Co-integration of elemental semiconductor devices and compound semiconductor devices
09/23/2014US8840724 Continuous growth of single-wall carbon nanotubes using chemical vapor deposition
09/23/2014US8840722 Graphene production using laser heated crystal growth
09/23/2014CA2778082C Electrode and method for supplying current to a reactor
09/18/2014WO2014145286A1 Sic substrate with sic epitaxial film
09/18/2014WO2014141959A1 METHOD AND DEVICE FOR MANUFACTURING GALLIUM NITRIDE (GaN) FREE-STANDING SUBSTRATE
09/18/2014US20140272335 Low-E Glazing Performance by Seed Structure Optimization
09/18/2014US20140264388 Low carbon group-iii nitride crystals
09/18/2014US20140264348 Asymmetric Cyclic Desposition Etch Epitaxy
09/18/2014US20140261698 Wafer carrier with temperature distribution control
09/18/2014US20140261187 Wafer carrier having provisions for improving heating uniformity in chemical vapor deposition systems
09/18/2014US20140261159 Film Forming Method Using Epitaxial Growth and Epitaxial Growth Apparatus
09/18/2014DE102014103518A1 Ein verfahren zum herstellen eines siliziumkarbidsubstrats für eine elektrische siliziumkarbidvorrichtung, ein siliziumkarbidsubstrat und eine elektrische siliziumkarbidvorrichtung A method for producing a silicon carbide substrate for electrical siliziumkarbidvorrichtung, a silicon carbide substrate and an electrical siliziumkarbidvorrichtung
09/16/2014US8835983 Nitride semiconductor device including a doped nitride semiconductor between upper and lower nitride semiconductor layers
09/12/2014WO2014137635A1 Growth of crystalline materials on two-dimensional inert materials
09/12/2014WO2014136749A1 Nitride semiconductor crystals and production method therefor
09/12/2014WO2014136602A1 Method for manufacturing gallium nitride crystal free-standing substrate
09/12/2014WO2014136393A1 Processed substrate and semiconductor device using same
09/12/2014WO2014135547A1 Synthetic diamond optical elements
09/11/2014US20140255705 Growth of Crystalline Materials on Two-Dimensional Inert Materials
09/11/2014US20140251205 Methods and systems for thin film deposition processes
09/11/2014US20140251204 Novel growth methods for controlled large-area fabrication of high-quality graphene analogs
09/11/2014US20140251203 Selective epitaxial growth method and film forming apparatus
09/09/2014US8829658 Method of manufacturing nitride substrate, and nitride substrate
09/09/2014US8829530 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
09/09/2014US8828849 Production of single-crystal semiconductor material using a nanostructure template
09/09/2014US8828140 Nitride crystal, nitride crystal substrate, epilayer-containing nitride crystal substrate, semiconductor device and method of manufacturing the same
09/04/2014WO2014133866A1 Production of free-standing crystalline material layers
09/04/2014US20140246422 Heating Configuration for Use in Thermal Processing Chambers
09/04/2014US20140245946 Synthesis and Transfer of Transition Metal Disulfide Layers on Diverse Surfaces
09/02/2014US8823056 Semiconductor heterostructures having reduced dislocation pile-ups and related methods
09/02/2014US8821635 Method for growing Si-Ge semiconductor materials and devices on substrates
08/2014
08/26/2014US8815710 Silicon epitaxial wafer and method for production thereof
08/21/2014WO2014125092A1 P-doping of group-iii-nitride buffer layer structure on a heterosubstrate
08/21/2014US20140235037 Crystal film, crystal substrate, and semiconductor device
08/21/2014US20140231830 Crystal layered structure and method for manufacturing same, and semiconductor element
08/21/2014US20140231826 Methods of Growing a Silicon Carbide Epitaxial Layer on a Substrate to Increase and Control Carrier Lifetime
08/21/2014US20140230723 METHOD FOR PRODUCING B-Ga203 SUBSTRATE AND METHOD FOR PRODUCING CRYSTAL LAMINATE STRUCTURE
08/21/2014US20140230722 Epitaxial wafer manufacturing device and manufacturing method
08/21/2014US20140230720 Direct band gap wurtzite semiconductor nanowires
08/20/2014EP2767620A1 P-doping of group-III-nitride buffer layer structure on a heterosubstrate
08/19/2014US8808452 Silicon film formation apparatus and method for using same
08/14/2014US20140225154 Film forming method, vacuum processing apparatus, semiconductor light emitting element manufacturing method, semiconductor light emitting element, and illuminating device
08/14/2014US20140224178 Alkyl push flow for vertical flow rotating disk reactors
08/14/2014US20140224176 Mocvd apparatus
08/13/2014CN203768486U 一种分子束外延大规模生产设备中带有切边的衬底生长托板 A molecular beam epitaxy substrate, large-scale production facilities in the growth of the pallet with trimming
08/13/2014CN203768485U 一种分子束外延大规模生产设备中的爪型衬底生长托板 A molecular beam epitaxy apparatus in large-scale production of the growth of the claw-type substrate pallet
08/13/2014CN103988321A 制造具有平坦表面的三维氮化镓结构的方法和使用具有平坦表面的三维氮化镓（GaN）柱状物结构的发光二极管（LED） The method of manufacturing a flat surface and having a three-dimensional structure having a flat surface GaN dimensional gallium nitride (GaN) light-emitting diode structure of pillars (LED)
08/13/2014CN103981572A 一种片状纳米氧化锌的生长方法 A sheet-like nano-ZnO growth method
08/13/2014CN103981568A 形成含碳外延硅层的方法 The method of forming a carbon-containing silicon epitaxial layer
08/13/2014CN103014625B 制备四方相室温多铁性材料BiFeO3的方法 Preparation of tetragonal phase at room temperature multiferroic material BiFeO3 methods
08/13/2014CN101812724B 硅成膜装置及其使用方法 A silicon film forming apparatus and method of use
08/12/2014US8803194 Zirconium and hafnium boride alloy templates on silicon for nitride integration applications
08/12/2014US8803160 Lightly doped silicon carbide wafer and use thereof in high power devices
08/12/2014US8800589 Material gas concentration control system
08/07/2014US20140220261 Microwave plasma reactors
08/06/2014EP2762615A2 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
08/06/2014CN103975098A 氮化铝单晶基板及其制造方法 Aluminum nitride single crystal substrate and manufacturing method
08/06/2014CN103966663A 半导体设备 Semiconductor Equipment
08/06/2014CN103966662A 一种在硅电极上定位横向生长氧化锌纳米线的方法 An electrode is positioned on the lateral growth of silicon nanowires method zinc oxide
08/06/2014CN103966574A 气相生长装置及气相生长方法 Vapor phase growth apparatus and vapor growth method
08/06/2014CN103966570A 单晶In<sub>2</sub>Te<sub>3</sub>纳米线及其制备以及准一维In<sub>2</sub>Te<sub>3</sub>纳米结构的宽谱光探测器及其制备 Monocrystalline In <sub> 2 </ sub> Te <sub> 3 </ sub> nanowires and their preparation as well as quasi-one-dimensional In <sub> 2 </ sub> Te <sub> 3 </ sub> nanostructures broad-spectrum light detector and preparation
08/06/2014CN102560676B 一种使用减薄键合结构进行GaN单晶生长的方法 A method of using thinning bonded structure GaN single crystal growth method
08/05/2014US8796121 Stress mitigating amorphous SiO2 interlayer
08/05/2014US8795440 Growth of non-polar M-plane III-nitride film using metalorganic chemical vapor deposition (MOCVD)
08/05/2014US8795430 Method of improving surface morphology of (Ga,Al,In,B)N thin films and devices grown on nonpolar or semipolar (Ga,Al,In,B)N substrates
07/2014
07/31/2014US20140209015 Vapor phase growth apparatus and vapor phase growth method
07/31/2014US20140209014 Method of growing diamond thin film
07/31/2014US20140209012 Single-crystal substrate, group-iii nitride crystal obtained using the same, and process for producing group-iii nitride crystal
07/30/2014CN103956413A 一种led外延层生长方法及制得的led外延层 An epitaxial layer growth method and led the epitaxial layer obtained led
07/30/2014CN103952682A 化学气相沉积生长单层二硫化钼的方法 Chemical vapor deposition growth method of a single layer of molybdenum disulfide
07/30/2014CN102593274B 脉冲气流法生长GaP电流扩展层的方法 Pulse airlaid GaP current spreading layer growth method
07/30/2014CN102154689B 气相沉积系统、制造发光装置的方法和发光装置 Vapor deposition system, a method of manufacturing a light emitting device and a light emitting device
07/29/2014US8790463 Substrate processing apparatus and semiconductor device producing method
07/29/2014US8790462 Precisely positioned nanowhiskers and nanowhisker arrays and method for preparing them
07/29/2014CA2765804C Method for making fancy orange coloured single crystal cvd diamond and product obtained
07/23/2014CN103943467A 利用应力梯度分离氮化物自支撑衬底的方法 Nitride stress gradient separation utilizing self-supporting substrate method
07/23/2014CN103938272A 等离子体辅助的外延生长装置及方法 Plasma-assisted epitaxial growth apparatus and method
07/23/2014CN103938269A 一种外延工艺腔体温度校准的方法 An epitaxial process chamber temperature calibration method
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