Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
01/2015
01/06/2015US8928000 Nitride semiconductor wafer including different lattice constants
01/06/2015US8927435 Load lock having secondary isolation chamber
01/06/2015US8927396 Production process of epitaxial silicon carbide single crystal substrate
01/06/2015US8927302 Chemical vapor deposition apparatus and method for manufacturing light-emitting devices using same
01/06/2015US8926754 Epitaxial growth susceptor
01/06/2015US8926753 Vapor phase growth apparatus and method of fabricating epitaxial wafer
01/06/2015US8926752 Method of producing a group III nitride crystal
01/01/2015US20150004435 Method for growing non-polar m-plane epitaxial layer of wurtzite semiconductors on single crystal oxide substrates
01/01/2015US20150001556 Growth substrate and light emitting device comprising the same
12/2014
12/31/2014CN104250853A Iii族氮化物晶体 Iii nitride crystal
12/31/2014CN104250849A 反应腔室及外延生长设备 The reaction chamber and epitaxial growth apparatus
12/31/2014CN104250726A 石英管的防护方法 Quartz tube protection methods
12/30/2014US8921979 Method for producing a semiconductor layer
12/30/2014US8921851 Non-polar plane of wurtzite structure material
12/30/2014US8921212 Manufacturing apparatus and method for semiconductor device
12/30/2014US8921205 Deposition of amorphous silicon-containing films
12/30/2014US8920565 Metalorganic chemical vapor deposition reactor
12/30/2014US8920560 Method for manufacturing epitaxial wafer
12/24/2014CN104246987A Iii族氮化物基板的处理方法及外延基板的制造方法 The method of manufacturing processing method Iii nitride substrate and the epitaxial substrate
12/24/2014CN104246025A 用于生产二维纳米材料的方法 Production method for two-dimensional material
12/24/2014CN104246006A 气相沉积装置以及相关的方法 Vapor deposition apparatus and related method
12/24/2014CN104233470A 一种控制氢气流量p型低掺杂碳化硅薄膜外延制备方法 A method of controlling the flow of hydrogen-doped p-type silicon carbide film epitaxial low Preparation
12/24/2014CN104233466A 一种控制生长压强p型低掺杂碳化硅薄膜外延制备方法 A method of controlling the growth of low pressure p-type doped silicon carbide epitaxial film preparation
12/24/2014CN104233465A 一种控制生长压强n型重掺杂碳化硅薄膜外延制备方法 An n-type epitaxial growth control pressure method for the preparation of heavily doped silicon carbide films
12/24/2014CN104233464A 一种控制氢气流量p型重掺杂碳化硅薄膜外延制备方法 A method of controlling the flow of hydrogen p-type silicon carbide epitaxial film preparation method heavily doped
12/24/2014CN104233463A 一种p型梯度掺杂碳化硅薄膜外延制备方法 SiC epitaxial film gradient method for preparing a p-type doping
12/24/2014CN104233462A 一种控制生长压强p型重掺杂碳化硅薄膜外延制备方法 A method for controlling the pressure p-type epitaxial growth of silicon carbide films prepared by the method of heavily doped
12/24/2014CN104233461A 一种控制氢气流量n型重掺杂碳化硅薄膜外延制备方法 A method for controlling hydrogen flow n-type epitaxial silicon carbide film preparation method heavily doped
12/24/2014CN104233460A 反应腔室及设置有该反应腔室的mocvd设备 The reaction chamber and the reaction chamber is provided with a device of mocvd
12/24/2014CN104233220A 一种控制掺杂源流量p型低掺杂碳化硅薄膜外延制备方法 A control flow of p-type doping source of low-doped silicon carbide epitaxial film preparation
12/23/2014US8916425 Method for forming microcrystalline semiconductor film and method for manufacturing semiconductor device
12/23/2014US8916124 Group III nitride crystal, method for growing the group III nitride crystal, and apparatus for growing the same
12/18/2014US20140367698 Method of controlling stress in group-iii nitride films deposited on substrates
12/17/2014CN104220651A 具有偏角的硅单晶和iii族氮化物单晶的层叠基板 Laminated substrate having a silicon single crystal and iii declination nitride single crystal of
12/17/2014CN104213098A 一种由片状氧化锡组成的纳米墙结构及其制备方法 Nano-wall structure and preparation method composed by a sheet of tin oxide
12/17/2014CN102597307B Cvd方法和cvd反应器 Cvd method and cvd reactor
12/16/2014US8912079 Compound semiconductor deposition method and apparatus
12/16/2014US8910590 Plasma deposition
12/11/2014US20140363675 Silicon carbide powder and method for manufacturing the same
12/11/2014US20140360430 Wafer carrier having thermal uniformity-enhancing features
12/10/2014CN203999906U 应用于Crius机型的石墨盘，石墨盘结构，反应腔室 Applied Crius models graphite plate, graphite plate structure, the reaction chamber
12/10/2014CN203999905U 半导体加工设备及其托盘 Semiconductor processing equipment and tray
12/10/2014CN104204291A 用于控制基板涂布装置的基座表面温度的方法及装置 Method and apparatus for controlling a substrate coating apparatus base surface temperature
12/10/2014CN104201196A 表面无微裂纹的Si基III族氮化物外延片 No surface microcracks Si-based III-nitride epitaxial wafers
12/10/2014CN104195629A 塔式多片外延生长装置 Multi-piece tower epitaxial growth apparatus
12/10/2014CN102719887B 一种基于氮化镓衬底的高质量氮化镓外延薄膜的生长方法 Based on high-quality gallium nitride substrate of GaN epitaxial films grown
12/10/2014CN102191476B 硫掺杂石墨烯薄膜的制备方法 Preparation of doped graphene films
12/09/2014US8906789 Asymmetric cyclic desposition etch epitaxy
12/09/2014US8906788 Method for making epitaxial structure
12/09/2014US8906733 Methods for forming nanostructures and photovoltaic cells implementing same
12/09/2014US8906727 Heteroepitaxial growth using ion implantation
12/09/2014US8906487 Base material with single-crystal silicon carbide film, method of producing single-crystal silicon carbide film, and method of producing base material with single-crystal silicon carbide film
12/09/2014US8906162 Metal organic chemical vapor deposition equipment
12/04/2014US20140356276 Optical quality diamond material
12/04/2014US20140353684 Silicon carbide epitaxial wafer and method for fabricating the same
12/04/2014US20140353680 Gallium Nitride Semiconductor Structures With Compositionally-Graded Transition Layer
12/02/2014US8901570 Epitaxial silicon carbide single crystal substrate and process for producing the same
12/02/2014US8900979 Pretreatment method for reduction and/or elimination of basal plane dislocations close to epilayer/substrate interface in growth of SiC epitaxial films
11/2014
11/27/2014US20140345686 High-throughput continuous gas-phase synthesis of nanowires with tunable properties
11/27/2014US20140345517 Method for the formation of nano-scale on-chip optical waveguide structures
11/20/2014US20140338589 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods
11/20/2014US20140338588 Method of Growing High Quality, Thick SiC Epitaxial Films by Eliminating Silicon Gas Phase Nucleation and Suppressing Parasitic Deposition
11/18/2014US8889530 Formation of highly dislocation free compound semiconductor on a lattice mismatched substrate
11/18/2014US8888917 Restricted radiated heating assembly for high temperature processing
11/18/2014US8888914 Process for producing layered member and layered member
11/18/2014US8888913 Method of manufacturing epitaxial silicon wafer and apparatus therefor
11/18/2014US8887650 Temperature-controlled purge gate valve for chemical vapor deposition chamber
11/13/2014US20140335676 Method for manufacturing a composite wafer having a graphite core, and composite wafer having a graphite core
11/13/2014US20140332934 Substrates for semiconductor devices
11/13/2014US20140332850 Epitaxial Growth of Crystalline Material
11/13/2014US20140331918 Method for Growing an AIN Monocrystal and Device for Implementing Same
11/11/2014US8882935 Fabrication of nonpolar indium gallium nitride thin films, heterostructures, and devices by metalorganic chemical vapor deposition
11/11/2014US8882911 Apparatus for manufacturing silicon carbide single crystal
11/11/2014US8882910 AlGaN substrate and production method thereof
11/11/2014US8882909 Method for producing virtual Ge substrates for III/V-integration on Si(001)
11/11/2014US8882077 Seed layers and process of manufacturing seed layers
11/06/2014US20140326186 Metal-organic vapor phase epitaxy system and process
11/04/2014US8878345 Structural body and method for manufacturing semiconductor substrate
11/04/2014US8878244 Semiconductor device having strained silicon film
11/04/2014US8876973 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
10/2014
10/30/2014US20140318592 Enhancement of thermoelectric properties through polarization engineering
10/30/2014US20140318443 Nucleation of aluminum nitride on a silicon substrate using an ammonia preflow
10/30/2014US20140318442 High throughput epitaxial deposition system for single crystal solar devices
10/28/2014US8872115 Radiological image conversion panel, method of manufacturing the same, and radiological image detection apparatus
10/28/2014US8871647 Group III nitride substrate, semiconductor device comprising the same, and method for producing surface-treated group III nitride substrate
10/23/2014US20140312421 Vapor-Trapping Growth of Single-Crystalline Graphene Flowers
10/23/2014US20140311403 High throughput multi-wafer epitaxial reactor
10/21/2014US8865105 Graphene and its growth
10/16/2014US20140308782 Self-limiting selective epitaxy process for preventing merger of semiconductor fins
10/16/2014US20140308590 Solid polymer electrolyte, method of preparing solid polymer electrolyte and electrochemical device
10/16/2014US20140308437 Epitaxial Graphene Surface Preparation for Atomic Layer Deposition of Dielectrics
10/14/2014US8859401 Method for growing a nitride-based III-V group compound semiconductor
10/14/2014US8859042 Methods for heating with lamps
10/14/2014US8858708 Polycrystalline III-nitrides
10/08/2014EP2785646A1 Method for the purification of alpha-alumina fibers
10/07/2014US8853829 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
10/07/2014US8853828 Epitaxial substrate for semiconductor device, method for manufacturing epitaxial substrate for semiconductor device, and semiconductor device
10/07/2014US8853670 III nitride semiconductor substrate, epitaxial substrate, and semiconductor device
10/07/2014US8853064 Method of manufacturing substrate
10/07/2014US8853030 Method for production of selective growth masks using underfill dispensing and sintering
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