Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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07/24/2013 | CN203080108U Reaction hood |
07/24/2013 | CN203080107U Etching and roasting equipment |
07/24/2013 | CN103215648A A method of growing semiconductor heterostructures based on gallium nitride |
07/24/2013 | CN103215647A Non-polar a-side GaN film growth method |
07/24/2013 | CN103215643A Method for preparing monocrystal oxide film on Ge substrate |
07/24/2013 | CN103215642A Method for controlling growth of P-type GaN low-flow dopant |
07/24/2013 | CN103215571A Apparatus and methods for deposition reactors |
07/24/2013 | CN102016118B Apparatus and methods for deposition reactors |
07/24/2013 | CN101681871B Device for coating a plurality of closest-packed substrates arranged on a susceptor |
07/23/2013 | US8491718 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon |
07/18/2013 | WO2012043885A9 Method for producing substrate for group iii nitride semiconductor element fabrication, method for producing group iii nitride semiconductor free-standing substrate or group iii nitride semiconductor element, and group iii nitride growth substrate |
07/18/2013 | US20130182367 Method for forming rutile titanium oxide and the stacking structure thereof |
07/18/2013 | US20130180447 Susceptor and method for manufacturing epitaxial wafer |
07/17/2013 | EP2615629A1 Epitaxial substrate for semiconductor element, method for producing epitaxial substrate for semiconductor element, and semiconductor element |
07/17/2013 | CN103205806A Mono-crystalline cubic carbon nitride film preparation method |
07/17/2013 | CN103205805A Mono-crystalline cubic carbon nitride film preparation method |
07/16/2013 | CA2556066C Vapor phase growth apparatus |
07/11/2013 | WO2013102360A1 Method for preparing graphene by reaction with cl2 based on annealing with assistant metal film |
07/11/2013 | US20130178049 Method of manufacturing substrate |
07/11/2013 | DE102012103295A1 Device useful for coating semiconductor substrates, comprises processing unit, which is centrally arranged transfer module, loading- or unloading interface, power modules comprising a gas mixing system, pipelines, and a service space |
07/10/2013 | CN203049089U Pulse injection type metal organic chemical vapor deposition system |
07/10/2013 | CN103194795A Method for low-cost preparation of large-size monocrystal graphene |
07/10/2013 | CN103194734A Preparation method of self-assembled three-dimensional hafnium carbide whisker network structure |
07/10/2013 | CN101057008B Method for growing Si-Ge semiconductor materials and devices on substrates |
07/04/2013 | WO2013099249A1 METHOD FOR FABRICATING THREE-DIMENSIONAL GALLIUM NITRIDE STRUCTURES WITH PLANAR SURFACES AND LIGHT EMITTING DIODE (LED) USING THREE-DIMENSIONAL GALLIUM NITRIDE (GaN)PILLAR STRUCTURES WITH PLANAR SURFACES |
07/04/2013 | US20130167771 Vapor phase growth apparatus |
07/04/2013 | US20130167769 Targeted temperature compensation in chemical vapor deposition systems |
07/03/2013 | CN203034139U LED epitaxial wafer reaction cavity |
07/03/2013 | CN203034094U Graphite disc sucking device |
07/03/2013 | CN203034089U Metal dust filtering device of MOCVD (metal organic chemical vapor deposition) device |
07/03/2013 | CN103187250A Multiple-time epitaxial growth method |
07/03/2013 | CN103184514A Crystal growing furnace |
07/03/2013 | CN103184513A Preparation method of high-temperature superconducting thin film |
07/03/2013 | CN103184425A Method for growing graphene film by using low-temperature chemical vapor deposition |
06/27/2013 | WO2013094058A1 Aluminum nitride single crystal substrate and method for producing same |
06/27/2013 | WO2013093580A1 Processes and systems for reducing undesired deposits within a reaction chamber associated with a semiconductor deposition system |
06/27/2013 | US20130160702 Methods of growing iii-v semiconductor materials, and related systems |
06/27/2013 | US20130160701 Barrier guided growth of microstructured and nanostructured graphene and graphite |
06/27/2013 | US20130160699 Method of Manufacturing III-Nitride Crystal |
06/26/2013 | EP2607527A1 Process for production of aluminum-containing iii nitride single crystal |
06/26/2013 | CN103180971A Iii-nitride layer grown on a substrate |
06/26/2013 | CN103180495A Method of forming a composite substrate |
06/26/2013 | CN103173854A Epitaxially coated semiconductor wafer and device and method for producing an epitaxially coated semiconductor wafer |
06/26/2013 | CN103173738A Preparation method for GaN nanostructure with adjustable Ga vacancy |
06/20/2013 | WO2013088916A1 Device and method for forming gallium nitride film, and hydrogenated gallium generator |
06/20/2013 | WO2013087697A1 Single crystal cvd synthetic diamond material |
06/20/2013 | US20130152853 Film-forming apparatus and film-forming method |
06/20/2013 | US20130152852 Large aluminum nitride crystals with reduced defects and methods of making them |
06/19/2013 | CN203007479U Substrate supporting structure and deposition device |
06/19/2013 | CN203007478U Vapour-phase epitaxial material growth cavity step-by-step treatment device |
06/19/2013 | CN103160929A Preparation method of monocrystalline AlN nanocones and nanosheets |
06/19/2013 | CN103160923A Film-forming apparatus and film-forming method |
06/19/2013 | CN103160922A Film-forming apparatus and film-forming method |
06/19/2013 | CN103160921A Preparation method of silicon-doped titanium oxide nanowires with super-hydrophilic performance |
06/19/2013 | CN103160809A Gas dispersion device used in a growth process of wafer polycrystalline silicon film and growth process |
06/13/2013 | WO2013085417A1 Crucible for evaporating aluminium in an epitaxy process |
06/13/2013 | US20130146835 Nanostructures and methods for manufacturing the same |
06/13/2013 | US20130145984 Method of epitaxial growth effectively preventing auto-doping effect |
06/12/2013 | EP2602362A1 Group iii nitride crystal growing method |
06/12/2013 | EP2601147A1 Vitreous silica crucible having a polygonal opening, and method for manufacturing same |
06/12/2013 | CN103154331A Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
06/12/2013 | CN103154312A Thermalizing gas injectors, material deposition systems, and related methods |
06/12/2013 | CN103147129A Method for growing a crystalline composition comprising gallium nitride |
06/12/2013 | CN103147124A Epitaxially coated semiconductor wafer |
06/12/2013 | CN103147064A Electronic type gallium nitride (n-GaN) thin film and preparation method thereof |
06/12/2013 | CN102304698B Device for growing silicon carbide crystal by high-temperature chemical vapor deposition (HTCVD) method |
06/11/2013 | US8460464 Method for producing single crystalline diamonds |
06/06/2013 | WO2013079620A1 Method for the purification of alpha-alumina fibers |
06/06/2013 | US20130143022 Method for producing diamond layers and diamonds produced by the method |
06/05/2013 | CN103137656A Silicon substrate, epitaxial structure, and method of manufacturing the silicon substrate and epitaxial structure |
06/05/2013 | CN103137445A Method of forming finfet doping fins |
06/05/2013 | CN103132144A Method for preparing Cu2O film |
06/05/2013 | CN103132140A Hydride vapor phase epitaxy device |
06/05/2013 | CN103132139A Epitaxial deposition equipment, spray header and manufacturing method of spray header |
06/05/2013 | CN103132138A Vapor phase epitaxy device |
06/05/2013 | CN103132049A Forming method of silicon thin film and forming device |
06/05/2013 | CN101883881B Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device |
05/30/2013 | WO2013075390A1 Hydride vapor phase epitaxy device |
05/30/2013 | US20130136912 Micro coil, manufacturing method and manufacturing apparatus thereof |
05/29/2013 | CN103123948A Low-bending silicon-based III-nitride epitaxial wafer and growth method thereof |
05/29/2013 | CN102162137B High quality strain Ge/SiGe super-lattice structure and preparation method thereof |
05/28/2013 | US8450717 Nanostructures and methods for manufacturing the same |
05/23/2013 | WO2013073534A1 Method for producing silicon carbide single crystals |
05/23/2013 | US20130125820 Chemical vapor deposition or epitaxial-layer growth reactor and supporter thereof |
05/23/2013 | DE102012220314A1 Transparenter Kohlenstoff-Nanoröhren-Graphen-Hybridleiter und Feldeffekttransistor Transparent carbon nanotube-graphene hybrid circuit and field effect transistor |
05/23/2013 | DE102008056195B4 Verfahren zum Herstellen einer Epitaxieschicht und Verfahren zum Herstellen eines Halbleiterbeuelements A method of manufacturing an epitaxial layer and method for manufacturing a Halbleiterbeuelements |
05/22/2013 | CN103114332A Method for preparing gallium nitride monocrystal substrate by surface modification auto-separation |
05/22/2013 | CN103114331A Preparation technology of mono-crystal gallium arsenide film |
05/16/2013 | US20130118408 System for use in the formation of semiconductor crystalline materials |
05/16/2013 | DE112011102417T5 Herstellung von polykristallinem Silizium Producing polycrystalline silicon |
05/15/2013 | CN103103502A Metal organic chemical vapor deposition apparatus and method |
05/15/2013 | CN103103501A Fan-shaped spray head structure for vapor phase epitaxy of material |
05/15/2013 | CN103103498A Graphite plate baking tray assembly |
05/15/2013 | CN101255545B Deposition of LICo02 |
05/14/2013 | CA2712316C Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
05/09/2013 | US20130112990 Gallium Nitride Devices with Compositionally-Graded Transition Layer |
05/08/2013 | EP2589071A2 Thin films and methods of making them using cyclohexasilane |
05/08/2013 | EP2588650A1 Selective epitaxy of si-containing materials and substitutionally doped crystalline si-containing materials |
05/08/2013 | DE102009030296B4 Verfahren zur Herstellung einer epitaxierten Siliciumscheibe A process for producing an epitaxially coated silicon wafer |
05/08/2013 | CN103098173A Polycrystalline silicon production |