Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
07/2014
07/23/2014CN103938268A 一种降低碳化硅外延片表面颗粒密度的方法 A method of reducing the density of the silicon carbide wafer surface of the particles method
07/23/2014CN102301043B 外延碳化硅单晶基板及其制造方法 An epitaxial silicon carbide single crystal substrate and a method of manufacturing
07/17/2014WO2014079836A3 Synthetic diamond heat spreaders
07/17/2014WO2014064264A3 Electronic device comprising nanowire(s), provided with a transition metal buffer layer, method for growing at least one nanowire and method for producing a device
07/17/2014WO2014064263A3 Method for growing at least one nanowire from a layer of a transition nitride metal, said layer being obtained in two steps
07/17/2014US20140196660 Nitride semiconductor crystal producing method
07/17/2014DE102013000882B3 Halbleiterbauelement mit Härtepuffer und dessen Verwendung Semiconductor component with hardness buffer and its use
07/16/2014EP2755228A1 Sic epitaxial wafer and method for manufacturing same
07/16/2014CN103924298A 一种氧化镓异质结结构及其生长方法和专用装置 An oxidized gallium heterojunction structure and its growth methods and special equipment
07/16/2014CN102465337B 一种多片多源卧式氢化物气相外延生长系统 A multi-chip multi-source horizontal hydride vapor phase epitaxy system
07/16/2014CN102465335B 一种用于半导体材料热壁外延生长系统的加热装置 A heating device hot wall epitaxial growth of semiconductor material systems for
07/15/2014US8778078 Process for the manufacture of a doped III-N bulk crystal and a free-standing III-N substrate, and doped III-N bulk crystal and free-standing III-N substrate as such
07/10/2014US20140193624 Cutting Insert and Method for Production Thereof
07/10/2014US20140190410 Equipment for manufacturing semiconductor
07/10/2014US20140190400 Epitaxial wafer manufacturing device and manufacturing method
07/10/2014US20140190399 REDUCTION OF BASAL PLANE DISLOCATIONS IN EPITAXIAL SiC USING AN IN-SITU ETCH PROCESS
07/09/2014CN203697610U 氮化铟/氮化镓/玻璃结构 Indium nitride / gallium nitride / glass structure
07/09/2014CN103911657A 一种化合物半导体大面积气相外延用喷口分布方式 A large area of ​​a compound semiconductor epitaxial vapor vents are distributed by
07/09/2014CN102465336B 一种高锗浓度的锗硅外延方法 Of a high concentration of germanium silicon germanium epitaxy
07/09/2014CN102395714B 外延反应器的反应室和使用所述室的反应器 The reaction chamber and the chamber of an epitaxial reactor using a reactor
07/08/2014US8772626 Nanostructures and methods for manufacturing the same
07/08/2014US8771822 Methods for the growth of three-dimensional nanorod networks
07/08/2014US8771416 Substrate processing apparatus with an insulator disposed in the reaction chamber
07/02/2014CN203683723U 一种真空密闭石英舟 A vacuum-sealed quartz boat
07/02/2014CN203683659U 用于多反应腔化学气相沉积设备的多腔双密封圈系统 For chemical vapor deposition equipment and multiple reaction chambers multi-cavity double seal system
07/02/2014CN103898601A 晶种层的形成方法、硅膜的成膜方法以及成膜装置 The method for forming the seed layer, and a film forming method of the silicon film deposition apparatus
07/01/2014US8765091 Method to manufacture large uniform ingots of silicon carbide by sublimation/condensation processes
07/01/2014DE202014002365U1 Waferträger mit Einrichtungen zum Verbessern der Erwärmungsgleichmässigkeit in Systemen zur chemischen Gasphasenabscheidung The wafer carrier with means for improving the Erwärmungsgleichmässigkeit in systems for chemical vapor deposition
06/2014
06/26/2014WO2014099790A1 Nanostructured whisker article
06/26/2014US20140174357 Equipment for manufacturing semiconductor
06/26/2014US20140174350 Vapor deposition apparatus
06/26/2014US20140174343 Method for making topological insulator structure
06/26/2014US20140174342 Methods for increasing growth rate of thin films
06/26/2014DE102012223986A1 Template für laterales Überwachsen mindestens einer Gruppe-III-Nitrid-basierten Schicht Template for lateral overgrowth at least one group III-nitride-based layer
06/26/2014DE102008034260B4 Verfahren zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD in einer Kammer und Kammer zum Abscheiden einer Schicht auf einer Halbleiterscheibe mittels CVD A method for depositing a layer on a semiconductor wafer by CVD in a chamber and chamber for depositing a layer on a semiconductor wafer by CVD
06/25/2014CN103890244A 金刚石传感器、检测器和量子装置 Diamond sensors, detectors, and quantum devices
06/25/2014CN103882526A 在SiC衬底上直接生长自剥离GaN单晶的方法 Directly on a SiC substrate, a GaN single crystal growth method of a self-release
06/25/2014CN103882515A 一种氢化物气相外延设备 A hydride vapor phase epitaxy equipment
06/25/2014CN102358955B 制备iii-n 体晶和自支撑iii-n 衬底的方法以及iii-n 体晶和自支撑iii-n 衬底 Preparation iii-n bulk crystal and self-supporting iii-n substrate method, and iii-n bulk crystal and self-supporting substrate iii-n
06/25/2014CN102251277B 一种氧化锌透明导电薄膜及其制造方法 A zinc oxide transparent conductive film and its manufacturing method
06/25/2014CN102119243B 利用氢化物气相外延(HVPE)生长平面非极性的{1-100}m面和半极性的{11-22}氮化镓 Using a hydride vapor phase epitaxy (HVPE) growth plane non-polar {1-100} m side and semi-polar {11-22} GaN
06/19/2014WO2014090664A1 Method for making diamond layers by cvd
06/18/2014CN103866390A Method for doping zinc into gallium phosphide polycrystal
06/18/2014CN103866380A Method for carrying out GaN single crystal growth by using graphic annealing porous structure
06/18/2014CN103866379A Method of preparing GaP film material
06/18/2014CN103866276A Method for preparing co-doped zinc oxide thin film through atomic layer deposition
06/18/2014CN103866273A Method for preparing N-Zr-codoped zinc oxide film through atomic layer deposition
06/18/2014CN103866272A Method for improving P-type stability of zinc oxide film
06/18/2014CN103866271A Preparation method for donor-acceptor co-doping of zinc oxide thin film
06/18/2014CN103866270A Preparation method for Te-N co-doping of zinc oxide thin film
06/18/2014CN103866269A Method for preparing Te-N co-doped zinc oxide thin film through atomic layer deposition
06/18/2014CN103866266A Method for preparing low surface roughness zinc oxide film
06/18/2014CN102534767B Na-mixing method for growing p-type ZnO single crystal film
06/18/2014CN102383192B Growth method of germanium substrate and germanium substrate
06/18/2014CN102268737B Method for producing III-n layers, and III-n layers or III-n substrates, and devices based thereon
06/12/2014US20140162021 Method for producing graphene, and graphene produced by the method
06/11/2014CN203639603U 一种mocvd石墨盘与反应室的连接结构 Mocvd connection structure of a graphite plate and the reaction chamber
06/11/2014CN103849853A Method for relieving stress between silicon substrate and gallium nitride film during MOCVD (Metal Organic Chemical Vapor Deposition) process
06/10/2014US8747982 Production method for an SiC volume monocrystal with a homogeneous lattice plane course and a monocrystalline SiC substrate with a homogeneous lattice plane course
06/10/2014US8747553 β-Ga2O3 single crystal growing method including crystal growth method
06/05/2014WO2014083400A1 Deposition systems having interchangeable gas injectors and related methods
06/05/2014US20140150713 Controlling doping of synthetic diamond material
06/04/2014EP2738793A1 Method of Growing Nitride Semiconductor Layer, Nitride Semiconductor Device, and Method of Fabricating the Same
06/04/2014EP2738291A1 Silicon carbide single crystal manufacturing device
06/04/2014CN103834999A Method for preparing gallium nitride single-crystal substrate by prefabricating cracks
06/03/2014US8741451 Crystal film, crystal substrate, and semiconductor device
06/03/2014CA2607202C High colour diamond layer
06/03/2014CA2548449C Method of incorporating a mark in cvd diamond
05/2014
05/30/2014WO2014081654A1 Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds
05/30/2014WO2014081604A1 Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
05/30/2014WO2014080566A1 Semiconductor manufacturing apparatus, semiconductor device, and semiconductor device manufacturing method
05/29/2014US20140145214 Sic epitaxial wafer and method for producing same, and device for producing sic epitaxial wafer
05/28/2014EP2735630A1 Sic epitaxial wafer and method for producing same, and device for producing sic epitaxial wafer
05/28/2014CN103828019A 在硅或类似的基材上制造氮化镓的厚的外延层的方法以及使用所述方法获得的层 Layer, and a method of using the method of manufacturing a GaN epitaxial layer on a silicon substrate or the like to obtain a thickness of
05/28/2014CN103820849A 一种减压生产12寸单晶硅外延片的工艺 One kind of pressure 12-inch monocrystalline silicon wafer production process
05/28/2014CN102492986B 一种选区异质外延衬底结构及其制备和外延层生长方法 Heteroepitaxial substrate and the epitaxial layer structure and preparation method of growing a constituency
05/27/2014US8735716 Solar cell and method for fabricating the same
05/22/2014WO2014077941A1 Selective gallium nitride regrowth on (100) silicon
05/22/2014WO2014077039A1 Method for manufacturing silicon carbide semiconductor device
05/22/2014WO2014076945A1 Production method for semiconductor epitaxial wafer, semiconductor epitaxial wafer, and production method for solid-state imaging element
05/22/2014WO2014076893A1 Seed crystal for sic single-crystal growth, sic single crystal, and method of manufacturing the sic single crystal
05/22/2014US20140137795 Method for growing epitaxial diamond
05/22/2014US20140137793 Method of fabricating wafer
05/22/2014DE112012003488T5 Direkte Flüssigkeitsinjektion für Halidgasphasen-Epitaxiesysteme sowie Verfahren dafür Direct liquid injection for Halidgasphasen-Epitaxiesysteme and method therefor
05/22/2014DE112012003485T5 Depositionssysteme einschließlich eines in einer Reaktionskammer enthaltenenVorläufergasofens sowie Verfahren dafür Deposition systems, including one in a reaction chamber containing precursor gas furnace and method therefor
05/22/2014DE102013112646A1 Verfahren für die spannungsreduzierte Herstellung von Halbleiterbauelementen A method for the voltage reduced manufacturing of semiconductor devices
05/22/2014DE102012220314B4 Verfahren zur Herstellung einer transparenten Kohlenstoff-Nanoröhren-Graphen-Hybriddünnschicht, Nanoröhren-Graphen-Hybriddünnschicht und Feldeffekttransistor mit dieser A method for producing a transparent carbon nanotube-graphene hybrid thin film nanotube-graphene hybrid thin film field effect transistor and with this
05/21/2014EP2732069A1 Gas inlet member of a cvd reactor
05/21/2014CN103806104A 一种高Al组分AlGaN薄膜的制备方法 Method for preparing high Al content AlGaN films
05/21/2014CN103806095A 行星式旋转托盘装置 Planetary rotary tray unit
05/21/2014CN103806094A 外延生长设备 Epitaxial growth equipment
05/21/2014CN103806093A 基于icp的化合物半导体的外延生长装置及方法 Epitaxial growth on a compound semiconductor device and method of icp
05/21/2014CN103806092A 一种用于氢化物气相外延的反应器 A hydride vapor phase epitaxy reactor
05/20/2014US8728622 Single-crystal substrate, group-III nitride crystal obtained using the same, and process for producing group-III nitride crystal
05/20/2014US8728237 Crystal growth method for nitride semiconductor having a multiquantum well structure
05/20/2014US8728236 Low dislocation density III-V nitride substrate including filled pits and process for making the same
05/20/2014US8728235 Manufacturing method for three-dimensional GaN epitaxial structure
05/15/2014US20140131659 Gallium Nitride Devices With Aluminum Nitride Intermediate Layer
05/15/2014DE112007001605B4 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben und lichtemittierendes Element Zinc oxide thin film of the same p-type and method of forming and emitting element
05/14/2014CN103789825A 一种化合物半导体大面积气相外延用圆环形喷口分布方式 A compound semiconductor vapor large circular orifices distributed manner Epitaxy
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