Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
05/2014
05/14/2014CN103789824A 一种用于氢化物气相外延的光辅助加热系统 A hydride vapor phase epitaxy light auxiliary heating system
05/14/2014CN103789823A 一种氮化物半导体材料气相外延用反应器设计及方法 A nitride semiconductor material with a vapor phase epitaxy reactor design and method
05/14/2014CN103789822A 外延片 Epitaxial wafers
05/13/2014US8722526 Growing of gallium-nitrade layer on silicon substrate
05/08/2014WO2014028380A3 Multispectral imaging using silicon nanowires
05/08/2014US20140124674 Radiological image conversion panel, method of manufacturing the same, and radiological image detection apparatus
05/08/2014US20140123901 Silicon carbide single crystal manufacturing apparatus
05/08/2014DE102009030295B4 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer
05/07/2014EP2727133A1 Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
05/07/2014CN203583011U 一种超高温双层水冷石英管真空室用双密封结构 A double seal structure UHT double water-cooled vacuum chamber with a quartz tube
05/07/2014CN103779458A 一种蓝宝石复合衬底和其制备方法及其应用 One kind of sapphire substrates and methods for preparing complex and its application
05/07/2014CN103774230A 一种无氨化制备氮化镓纳米线的方法 Preparation of a non-ammoniated method of GaN nanowires
05/07/2014CN103774115A 化学气相沉积装置 Chemical vapor deposition apparatus
05/07/2014CN102112655B 原子层淀积设备和装载方法 Atomic layer deposition equipment and loading method
05/01/2014US20140120373 Method of nucleating the growth a diamond film and a diamond film nucleated thereof
05/01/2014US20140116330 Chemical vapor deposition flow inlet elements and methods
05/01/2014US20140116329 Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon
05/01/2014US20140116327 Method and apparatus for fabricating free-standing group iii nitride crystals
04/2014
04/30/2014EP2725124A1 N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
04/30/2014CN203569238U Silicon carbide epitaxial growth reaction chamber
04/30/2014CN203569237U Double-station CVD (chemical vapor deposition) furnace
04/30/2014CN203569236U MOCVD reaction furnace
04/30/2014CN103765559A SiC epitaxial wafer and method for manufacturing same
04/30/2014CN103757693A Growth method of GaN nanowire
04/30/2014CN102345169B Array type diamond film and method for making the same
04/30/2014CN102127755B Direct current glow plasma device and preparation method of diamond chip
04/29/2014US8709923 Method of manufacturing III-nitride crystal
04/29/2014US8709371 Method for growing group III-nitride crystals in supercritical ammonia using an autoclave
04/28/2014DE202013104896U1 Heizanordnung Heater assembly
04/23/2014CN203559154U Silicon carbide epitaxial growth device
04/23/2014CN103748263A Deposition system having access gates and related method
04/23/2014CN103748262A Direct liquid injection for halide vapor phase epitaxy systems and methods
04/23/2014CN103741224A Preparation method for high-purity and high-density WS2 lamellar nano structure
04/23/2014CN103741221A Method for growing high-quality gallium nitride (GaN) crystals by using hexagonal boron nitride nanosheets
04/23/2014CN103741220A Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide
04/23/2014CN102428028B Support cone for silicon seed bars
04/23/2014CN102208340B Method for making self-support gallium nitride substrate
04/22/2014US8704239 Production method of a layered body
04/17/2014US20140102372 Wafer carrier
04/16/2014EP2719794A2 Plasma etching of diamond surfaces
04/16/2014CN103732808A Silicon carbide single crystal manufacturing device
04/16/2014CN103732791A Deposition systems including a precursor gas furnace within a reaction chamber, and related methods
04/16/2014CN103726103A Reaction chamber
04/16/2014CN103726102A Method for preparing super-long one-dimensional mono-crystalline silicon nano/micron structure
04/16/2014CN102257190B Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
04/15/2014US8698286 High voltage switching devices and process for forming same
04/15/2014US8696809 Manufacturing method of epitaxial silicon wafer and substrate cleaning apparatus
04/10/2014WO2014054284A1 Nitride semiconductor structure, laminate structure, and nitride semiconductor light-emitting element
04/10/2014US20140099718 Single-crystal apatite nanowires sheathed in graphitic shells and synthesis method thereof
04/10/2014US20140097446 Gallium Nitride Devices with Gallium Nitride Alloy Intermediate Layer
04/09/2014CN203530483U LED (Light Emitting Diode) epitaxial wafer inverted MOCVD (Metallo Organic Chemical Vapor Deposition) reaction furnace
04/09/2014CN203530482U Inverted metal organic chemical vapor deposition (MOCVD) reaction furnace
04/09/2014CN203530429U Semiconductor film growth equipment
04/09/2014CN103710757A Growth method for improving surface quality of indium gallium nitrogen epitaxial material
04/09/2014CN103710748A Growth method of high-quality high-speed monocrystal diamond film
04/09/2014CN103710747A N source intermittent transportation prepared nitride single-crystal film and method
04/09/2014CN103710746A Nanostructured tellurium monocrystalline preparation method
04/09/2014CN102400220B Method for preparing titanium oxide nano wire with self-induction chemical vapor deposition method
04/09/2014CN102345162B One-dimensional axial type nano zinc oxide / zinc sulfide heterojunction and preparation method thereof
04/09/2014CN102140687B Preparation method of single-crystal titanium dioxide
04/08/2014US8691012 Method of manufacturing zinc oxide nanowires
04/02/2014CN203513831U Silicon carbide epitaxial furnace compatible small disk base
04/02/2014CN103696013A Gallium arsenide polycrystal liquid-seal-free synthesizer
04/02/2014CN103695999A Nitride single crystal membrane prepared by alternate source supply and method
04/02/2014CN102201550B Unit mask, mask assembly and method for manufacturing display device
04/01/2014CA2589299C Ultratough cvd single crystal diamond and three dimensional growth thereof
04/01/2014CA2532384C Annealing single crystal chemical vapor deposition diamonds
03/2014
03/27/2014WO2014045252A1 Method for forming an epitaxial silicon layer
03/27/2014WO2014045220A1 Method for surface treatment of single crystals of materials
03/27/2014WO2014044607A1 Single crystal chemical vapour deposited synthetic diamond materials having uniform colour
03/26/2014CN203498503U MOCVD (Metal Organic Chemical Vapor Deposition) slide tray up-and-down moving structure
03/26/2014CN103668460A Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystal
03/26/2014CN103668453A Two-dimensional silylene film and preparation method thereof
03/26/2014CN103668448A Vapor phase epitaxy method for gold-P doped HgCdTe material
03/26/2014CN103668447A Preparation device and preparation method for preparing same or similar lattice orientation graphene
03/26/2014CN103668446A Controllable precursor passage
03/26/2014CN103668445A Hetero-epitaxy monocrystal, hetero-junction solar cell, and manufacture methods thereof
03/26/2014CN103668123A Slide glass disc of chemical vapor deposition equipment for metal organic matters
03/26/2014CN103668115A Vapor phase epitaxy reaction tube with cavity wall temperature set by growth program in real time
03/26/2014CN103668106A Method for preparing monolayer hexagonal boron nitride
03/26/2014CN102277561B System and method for a gas treatment of a number of substrates
03/26/2014CN101949058B Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same
03/26/2014CN101443265B Method for metal-free synthesis of epitaxial semiconductor nanowires on Si
03/20/2014WO2014042054A1 Aluminum nitride substrate and group-iii nitride laminate
03/20/2014WO2014040446A1 Method for growing inn-based thin film material
03/20/2014US20140077222 Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer
03/19/2014EP2707523A1 Diamond sensors, detectors, and quantum devices
03/19/2014CN103649385A SiC epitaxial wafer and method for producing same, and device for producing SiC epitaxial wafer
03/19/2014CN103649369A Gas inlet member of a cvd reactor
03/19/2014CN103646858A Method for using SiGeC buffer layer to grow GaN on Si substrate
03/19/2014CN103643288A Preparation method of high-quality large-size monocrystal graphene
03/19/2014CN102409400B Light-emitting diode (LED) epitaxial growth device
03/18/2014US8674399 Semiconductor layer
03/18/2014US8673081 High throughput multi-wafer epitaxial reactor
03/13/2014WO2014038634A1 Epitaxial wafer and method for producing same
03/13/2014US20140070377 Compound semiconductor epitaxial structure and method for fabricating the same
03/13/2014US20140069327 Process for developing a composite coating of diamond like carbon and graphite on silicon carbide grain by indirect arc plasma heating dissociation
03/13/2014DE102012216070A1 Door for closing loading opening of process chamber of epitaxial reactor used in semiconductor industry, has a closure plate heat-absorption reducing unit arranged towards the process chamber pointing surface of closure plate
03/12/2014EP2705179A1 Diamond sensors, detectors, and quantum devices
03/12/2014CN203474963U Chemical vapor deposition equipment for producing silicon carbide epitaxial wafer
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