| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 10/25/1988 | US4780174 Insertion of padwafer into recess to allow uniform heating |
| 10/20/1988 | EP0276257A4 Method of epitaxially growing compound semiconductor materials. |
| 10/18/1988 | US4778580 Lattice disorder formation by cathode sputtering in inert gas plasma |
| 10/18/1988 | US4778202 Tubular component made out of quartz glass with a flange |
| 10/12/1988 | EP0286310A1 Fluidized bed diamond particle growth |
| 10/12/1988 | EP0286306A1 Method and apparatus for vapor deposition of diamond |
| 10/12/1988 | EP0286274A1 Reagent source for molecular beam epitaxy |
| 10/12/1988 | EP0286158A1 Gas system for precision injection of low vapour pressure materials into low pressure or vacuum systems |
| 10/12/1988 | EP0285840A2 Epitaxy installation |
| 10/12/1988 | EP0285834A1 Allyltellurides and their use in the MOCVD growth of group II-VI epitaxial films |
| 10/11/1988 | US4777090 Abrasion resistant protective coating of carbon and-or silicon dioxide |
| 10/11/1988 | US4777022 Envelope supporting heater core and semiconductor; buffer for uniform heat distribution |
| 10/06/1988 | WO1988007599A1 Composite diamond particles |
| 10/06/1988 | WO1988007096A3 Epitaxial installation |
| 10/06/1988 | DE3709657A1 MOVPE process |
| 10/05/1988 | EP0285358A2 Process for producing compound semiconductor and semiconductor device using compound semiconductor obtained by same |
| 10/04/1988 | CA1242623A1 Vapor phase epitaxial growth method by organometallic chemical vapor deposition |
| 09/28/1988 | EP0284516A1 Method of growing group III-V compound semiconductor epitaxial layer |
| 09/28/1988 | EP0284441A2 II-VI Group compound crystal article and process for producing the same |
| 09/28/1988 | EP0284437A2 III - V Group compound crystal article and process for producing the same |
| 09/28/1988 | EP0284435A2 Process for selective formation of II-VI group compound film |
| 09/28/1988 | EP0284433A2 Crystal articles and method for forming the same |
| 09/28/1988 | EP0284190A2 Enhanced CVD method for deposition of carbon |
| 09/28/1988 | EP0283874A1 Device for the production of a gas mixture by means of the saturation process |
| 09/27/1988 | US4774195 Process for the manufacture of semiconductor layers on semiconductor bodies or for the diffusion of impurities from compounds into semiconductor bodies utilizing an additional generation of activated hydrogen |
| 09/27/1988 | US4773355 Growth of epitaxial films by chemical vapor deposition |
| 09/22/1988 | WO1988007096A2 Epitaxial installation |
| 09/22/1988 | DE3708171A1 Gems and method of producing them |
| 09/21/1988 | EP0283007A2 Chemical vapour deposition apparatus having a perforated head |
| 09/20/1988 | US4772356 Gas treatment apparatus and method |
| 09/20/1988 | US4772296 Method of purifying and depositing group IIIa and group Va compounds to produce epitaxial films |
| 09/14/1988 | EP0282054A1 Thin film single crystal diamond substrate |
| 09/13/1988 | US4771446 Method of measuring the deviation |
| 09/07/1988 | CN88101061A Microwave enhanced cvd method for depositing carbon |
| 08/31/1988 | EP0280630A1 Process for the preparation of silicon carbide whiskers |
| 08/30/1988 | US4767666 Wafer base for silicon carbide semiconductor device |
| 08/30/1988 | US4767608 Gas discharges, hydrogen, hydrocarbons, inert gases, decomposition, carbon sources, adiabatic expansion |
| 08/30/1988 | US4767494 Reacting organometallic compound and hydride over heated substrate to decompose |
| 08/09/1988 | US4762576 Reusable ampules, mercury, cadmium, tellurium |
| 08/03/1988 | EP0276959A2 Process for producing crystal article |
| 08/03/1988 | EP0276257A1 Method of epitaxially growing compound semiconductor materials |
| 08/02/1988 | US4761269 Apparatus for depositing material on a substrate |
| 07/27/1988 | EP0276069A2 Vapor phase epitaxial growth of iron-doped, indium-based, compound group III-V semiconductors |
| 07/27/1988 | EP0191023B1 Tubular quartz-glass element with a flange |
| 07/26/1988 | US4760036 Epitaxial growing laterally monocrystalline silicon over oxide layer, etching silicon, selectively oxidizing silicon substrate, regrowing silicon laterally |
| 07/21/1988 | DE3743132A1 Verfahren zur herstellung von halbleitermaterial der gruppen ii und vi des periodischen systems durch chemische dampfablagerung metallorganischer verbindungen Process for the preparation of semiconductor material of the groups II and VI of the periodic table by chemical vapor deposition of organometallic compounds |
| 07/19/1988 | US4758399 Substrate for manufacturing single crystal thin films |
| 07/12/1988 | US4756895 Heating porous silicon carbide precursor in the presence of a crystal growth control additive |
| 07/12/1988 | US4756796 Method of producing wafer |
| 07/12/1988 | US4756792 Method for vapor-phase epitaxial growth of a single crystalline-, gallium arsenide thin film |
| 07/12/1988 | US4756791 Chemical vapor deposition process for producing metal carbide or nitride whiskers |
| 07/12/1988 | US4756272 Multiple gas injection apparatus for LPCVD equipment |
| 07/06/1988 | EP0273470A2 Method for decontamination of a chamber used in vacuum processes for deposition, etching and/or growth of high purity films, particularly applicable to semiconductor technology |
| 06/30/1988 | WO1988004830A1 Semi-insulating group iii-v based compositions |
| 06/29/1988 | EP0272773A2 Process for production silicon carbide whiskers |
| 06/29/1988 | EP0272418A2 Apparatus and process to condensate diamond |
| 06/28/1988 | CA1238557A1 Process for the production of a compound crystal |
| 06/22/1988 | EP0272140A2 TEOS based plasma enhanced chemical vapor deposition process for deposition of silicon dioxide films. |
| 06/16/1988 | WO1988004333A1 Production of silicon carbide |
| 06/15/1988 | EP0270991A2 Apparatus for forming thin film |
| 06/14/1988 | US4751555 Indium phosphide and indium gallium phosphide with controlled gallium concentration |
| 06/01/1988 | EP0269439A2 A heteroepitaxial growth method |
| 06/01/1988 | DE3739450A1 Verfahren zum ausbilden einer dotierten verbindungshalbleitereinkristallschicht A method of forming a doped compound semiconductor single crystal layer |
| 05/31/1988 | US4748135 Method of manufacturing a semiconductor device by vapor phase deposition using multiple inlet flow control |
| 05/25/1988 | EP0138963B1 Diethylberyllium dopant source for mocvd grown epitaxial semiconductor layers |
| 05/18/1988 | EP0267679A1 Coated article and method of manufacturing the article |
| 05/11/1988 | CN87107161A Composition film forming device |
| 05/10/1988 | US4743310 Mercury-cadmium-tellurium layer, infrared detectors |
| 05/10/1988 | CA1236554A1 Growth of semiconductors |
| 05/04/1988 | EP0266178A2 Method and apparatus for forming a thin film |
| 04/26/1988 | US4740263 Vapor deposition, electron bombardment |
| 04/21/1988 | WO1988002792A1 Process for depositing layers of diamond |
| 04/13/1988 | EP0263141A1 Method for depositing materials containing tellurium. |
| 04/12/1988 | US4736705 Gas injection via slotted hollow rods surrounded by stacked channeled plates |
| 04/05/1988 | USH459 Synthesis of cadmium sulfide using the spontaneous reaction of dialkylcadmium and hydrogen sulfide |
| 04/05/1988 | US4735396 Replica pattern of monocrystalline cleavage plane; solar cells |
| 04/05/1988 | US4734999 Cylinder for metal organic chemical vapor deposition |
| 03/29/1988 | US4734387 Growth of semiconductors on a shaped semiconductor substrate |
| 03/23/1988 | EP0260534A1 Metallorganic compounds |
| 03/22/1988 | US4732110 Inverted positive vertical flow chemical vapor deposition reactor chamber |
| 03/16/1988 | EP0259777A2 Method for growing single crystal thin films of element semiconductor |
| 03/16/1988 | EP0259759A2 Method for low temperature, low pressure chemical vapor deposition of epitaxial silicon layers |
| 03/15/1988 | US4731255 Gas-phase growth process and an apparatus for the same |
| 03/09/1988 | EP0258752A2 Article having surface layer of uniformly oriented, crystalline, organic microstructures |
| 03/08/1988 | US4729968 Vapor deposition decomposition of phosphine |
| 03/02/1988 | EP0258052A2 Chemical vapor deposition reactor and method of chemical vapor deposition |
| 03/02/1988 | EP0049286B1 Methods of producing sheets of crystalline material and devices amde therefrom |
| 03/01/1988 | US4728389 Particulate-free epitaxial process |
| 02/25/1988 | WO1988001204A1 Laser assisted fiber growth |
| 02/23/1988 | US4727047 Separable from a reusable substrate |
| 02/11/1988 | DE3626660A1 Process for producing pure semiconductor-material layers on semiconductor wafers by deposition from the gas phase |
| 02/03/1988 | EP0111510B1 Low temperature process for depositing epitaxial layers |
| 02/02/1988 | US4722911 Vapor phase epitaxy using complex premixing system |
| 01/28/1988 | WO1988000625A1 Method of epitaxially growing compound semiconductor materials |
| 01/27/1988 | EP0254560A1 Gaseous phase synthesized diamond and method for synthesizing same |
| 01/27/1988 | EP0254312A1 Method and apparatus for synthesizing diamond |
| 01/27/1988 | CN86104675A Apparatus and method for multiple and continuous growing of chloride and hydrogenate systems with sources |
| 01/21/1988 | EP0114876A4 Ultra-pure epitaxial silicon and process for its manufacture. |
| 01/20/1988 | EP0253611A2 Method of epitaxially growing gallium arsenide on silicon |
| 01/13/1988 | EP0252757A2 Photoelectric conversion device |