Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
01/1987
01/20/1987US4637924 Continuous silicon carbide whisker production
01/13/1987US4636268 Chemical beam deposition method utilizing alkyl compounds in a carrier gas
12/1986
12/30/1986US4633051 Stable conductive elements for direct exposure to reactive environments
12/30/1986US4633030 Photovoltaic cells on lattice-mismatched crystal substrates
12/30/1986US4632711 Vapor phase epitaxial growth method of zinc selenide and zinc selenide-sulphide by organometallic chemical vapor deposition
12/30/1986US4632060 Barrel type of epitaxial vapor phase growing apparatus
12/30/1986EP0206603A1 Method for growing crystals
12/30/1986EP0206370A1 Process for making a semiconductor device, including the vapour phase deposition of crystalline layers on a substrate
12/23/1986US4630669 Heat exchange apparatus for high temperature LPCVD equipment
12/23/1986CA1215521A1 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them
12/17/1986EP0205034A1 Chemical vapor deposition method for the GaAs thin film
12/16/1986US4629532 Semiconductor lasers
12/16/1986US4629514 Method of producing II-V compound semiconductors
12/04/1986WO1986007194A1 Wafer base for silicon carbide semiconductor device
12/03/1986EP0203616A2 Chemical vapor deposition method for the thin film of semiconductor
11/1986
11/25/1986US4624735 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members
11/20/1986WO1986006708A1 Septum closure
11/20/1986WO1986006687A1 In-situ cvd chamber cleaner
11/20/1986EP0201933A2 Vapor deposition method for the GaAs thin film
11/20/1986EP0201696A2 Production of carbon films
11/18/1986US4623426 Low temperature process for depositing epitaxial layers
11/18/1986US4623425 Method of fabricating single-crystal substrates of silicon carbide
11/12/1986EP0142495B1 Inverted positive vertical flow chemical vapor deposition reactor chamber
11/11/1986US4622236 Boron nitride film and process for preparing same
11/05/1986EP0199736A1 Technique for the growth of epitaxial compound semiconductor films
11/04/1986US4620968 Monoclinic phosphorus formed from vapor in the presence of an alkali metal
11/04/1986US4620963 Vapor transport reactor with composite metal-glass tube
10/1986
10/21/1986CA1212829A1 Susceptor assembly
10/09/1986WO1986005824A1 Thin layer consisting essentially of ruthenium salt
10/08/1986EP0196682A1 Fluidized bed heater, reactor and method for semiconductor processing
10/07/1986US4615298 Method of making non-crystalline semiconductor layer
10/01/1986EP0196170A2 Organic metallic compound pyrolysis vapor growth apparatus
09/1986
09/25/1986WO1986005524A1 Process for the manufacture of a p-conducting epitaxy layer from a iii/v semi-conductor
09/20/1986WO1990010726A1 Use of metallo-organic compounds for vapour deposition of thin films
09/17/1986EP0194501A2 Draw-off head for liquid containers
09/17/1986EP0194495A1 Method of producing sheets of crystalline material
09/10/1986EP0193830A2 Solar cell device incorporating plural constituent solar cells
09/10/1986EP0192280A3 Method of producing sheets of crystalline material
09/02/1986US4609424 Plasma enhanced deposition of semiconductors
08/1986
08/27/1986EP0192280A2 Method of producing sheets of crystalline material
08/26/1986US4607591 For chemical vapor deposition
08/26/1986CA1210526A1 Device having semi-insulating indium phosphides based compositions
08/26/1986CA1210220A1 High purity silane and silicon production
08/20/1986EP0191505A2 Method of producing sheets of crystalline material
08/20/1986EP0191504A2 Method of producing sheets of crystalline material
08/20/1986EP0191503A2 Method of producing sheets of crystalline material
08/20/1986EP0191023A1 Tubular quartz-glass element with a flange.
08/14/1986WO1986004734A1 Growth of lattice-graded epilayers
08/12/1986US4605542 Heating carbon black in an inert atmosphere with silica recovered from geothermal water
08/12/1986CA1209452A1 Heterostructure comprising a heteroepitaxial multiconstituent material
08/12/1986CA1209330A1 Inverted positive vertical flow chemical vapor deposition chamber
08/05/1986US4604273 Process for the growth of alpha silicon nitride whiskers
08/05/1986US4604231 Silicon fiber and method of making the same
07/1986
07/30/1986CN85109212A Growth of lattice-graded epilayers
07/29/1986CA1208812A1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers
07/22/1986US4601888 Protection of semiconductor substrates during epitaxial growth processes
07/16/1986EP0187402A1 Method of manufacturing preferentially oriented (111)-tungsten
06/1986
06/24/1986US4596721 Vacuum evaporating films of alkali metal polyphosphide
06/24/1986US4596626 Disposing on surface of base a low melting material which is capable of transformation to macrocrystalline or single crystal form, treating to form primary substrate having macrocrystalline or single crystal form
06/11/1986EP0184317A2 Graphite fibre growth employing nuclei derived from iron pentacarbonyl
06/10/1986CN85109258A Method of manufacturing tungsten perferentially orientated in the <111> direction
06/05/1986WO1986003231A1 Chemical beam deposition method
06/03/1986US4593168 Method and apparatus for the heat-treatment of a plate-like member
06/03/1986US4592933 High efficiency homogeneous chemical vapor deposition
06/03/1986US4592792 Using a mixture of silicon and chloride source gas; controlling temperature
06/03/1986US4592307 Vapor phase deposition apparatus
05/1986
05/27/1986US4591492 Treatment with sulfuric, hydrochloric, or nitric acid prior to calcination
05/22/1986WO1986002951A1 Method of growing crystalline layers by vapour phase epitaxy
05/21/1986EP0181624A1 Coating of semiconductor wafers and apparatus therefor
05/14/1986EP0180751A2 Method of making gallium arsenide thin-film solar cells
05/13/1986US4587928 Impeameable process tube of sintered silicon carbide
05/09/1986WO1986002776A1 Technique for the growth of epitaxial compound semiconductor films
04/1986
04/30/1986EP0179670A2 Production of silicon carbide cobweb whiskers
04/15/1986US4582560 In situ production of silicon crystals on substrate for use in solar cell construction
04/09/1986EP0176770A2 Fluid wall reactor
04/08/1986US4581248 Semiconductors, controlled and uniform heating
04/01/1986US4579699 Mixing silicon with amorphous silicon nitride and pore former, comaction, removal of pore former, and reacting with nitrogen
04/01/1986US4579621 Anisotropic dry etching of insulating film, exposing to low-pressure gas
04/01/1986US4579080 Induction heated reactor system for chemical vapor deposition
03/1986
03/26/1986EP0175601A1 Method and apparatus for obtaining a gas flow containing a gaseous compound, especially for use in an epitaxy reactor
03/26/1986EP0175030A2 Growth of semiconductors and apparatus for use therein
03/25/1986US4578142 Method for growing monocrystalline silicon through mask layer
03/25/1986CA1202168A1 Continuous silicon carbide whisker production
03/19/1986EP0174622A2 A process for preparing fine fibers
03/11/1986US4575464 Vapor deposition; purity
03/05/1986EP0173642A2 Photoactive pyrite film, method for its preparation and application of such a pyrite film
03/05/1986EP0173591A1 Process and reactor for vapour phase epitaxial growth
03/05/1986EP0173448A2 Method of forming a III-V semiconductor layer
03/05/1986EP0172876A1 Deposition technique.
02/1986
02/25/1986US4572873 Crystallites oriented at an angle to substrate of not more than 45degrees
02/25/1986US4572101 Side lifting wafer boat assembly
02/25/1986CA1201219A1 Low temperature process for depositing epitaxial layers
02/13/1986WO1986000973A1 Tubular quartz-glass element with a flange
02/13/1986WO1986000831A1 Method for producing thin films of rare earth chalcogenides
02/12/1986EP0170800A1 Heater assembly for molecular beam epitaxy furnace
02/11/1986US4569452 Silica glass tray made for wafers
02/05/1986EP0170362A1 Process for producing silicon carbide whisker
02/04/1986US4568397 Directing metalorganic vapors toward substrate; warming with radiant energy
01/1986
01/28/1986US4567352 Flashlight-radiant apparatus
01/21/1986US4565741 Boron nitride film and process for preparing same