Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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01/20/1987 | US4637924 Continuous silicon carbide whisker production |
01/13/1987 | US4636268 Chemical beam deposition method utilizing alkyl compounds in a carrier gas |
12/30/1986 | US4633051 Stable conductive elements for direct exposure to reactive environments |
12/30/1986 | US4633030 Photovoltaic cells on lattice-mismatched crystal substrates |
12/30/1986 | US4632711 Vapor phase epitaxial growth method of zinc selenide and zinc selenide-sulphide by organometallic chemical vapor deposition |
12/30/1986 | US4632060 Barrel type of epitaxial vapor phase growing apparatus |
12/30/1986 | EP0206603A1 Method for growing crystals |
12/30/1986 | EP0206370A1 Process for making a semiconductor device, including the vapour phase deposition of crystalline layers on a substrate |
12/23/1986 | US4630669 Heat exchange apparatus for high temperature LPCVD equipment |
12/23/1986 | CA1215521A1 Catenated phosphorus materials, their preparation and use, and semiconductor and other devices employing them |
12/17/1986 | EP0205034A1 Chemical vapor deposition method for the GaAs thin film |
12/16/1986 | US4629532 Semiconductor lasers |
12/16/1986 | US4629514 Method of producing II-V compound semiconductors |
12/04/1986 | WO1986007194A1 Wafer base for silicon carbide semiconductor device |
12/03/1986 | EP0203616A2 Chemical vapor deposition method for the thin film of semiconductor |
11/25/1986 | US4624735 Constituent members of a semiconductor element-manufacturing apparatus and a reaction furnace for making said constituent members |
11/20/1986 | WO1986006708A1 Septum closure |
11/20/1986 | WO1986006687A1 In-situ cvd chamber cleaner |
11/20/1986 | EP0201933A2 Vapor deposition method for the GaAs thin film |
11/20/1986 | EP0201696A2 Production of carbon films |
11/18/1986 | US4623426 Low temperature process for depositing epitaxial layers |
11/18/1986 | US4623425 Method of fabricating single-crystal substrates of silicon carbide |
11/12/1986 | EP0142495B1 Inverted positive vertical flow chemical vapor deposition reactor chamber |
11/11/1986 | US4622236 Boron nitride film and process for preparing same |
11/05/1986 | EP0199736A1 Technique for the growth of epitaxial compound semiconductor films |
11/04/1986 | US4620968 Monoclinic phosphorus formed from vapor in the presence of an alkali metal |
11/04/1986 | US4620963 Vapor transport reactor with composite metal-glass tube |
10/21/1986 | CA1212829A1 Susceptor assembly |
10/09/1986 | WO1986005824A1 Thin layer consisting essentially of ruthenium salt |
10/08/1986 | EP0196682A1 Fluidized bed heater, reactor and method for semiconductor processing |
10/07/1986 | US4615298 Method of making non-crystalline semiconductor layer |
10/01/1986 | EP0196170A2 Organic metallic compound pyrolysis vapor growth apparatus |
09/25/1986 | WO1986005524A1 Process for the manufacture of a p-conducting epitaxy layer from a iii/v semi-conductor |
09/20/1986 | WO1990010726A1 Use of metallo-organic compounds for vapour deposition of thin films |
09/17/1986 | EP0194501A2 Draw-off head for liquid containers |
09/17/1986 | EP0194495A1 Method of producing sheets of crystalline material |
09/10/1986 | EP0193830A2 Solar cell device incorporating plural constituent solar cells |
09/10/1986 | EP0192280A3 Method of producing sheets of crystalline material |
09/02/1986 | US4609424 Plasma enhanced deposition of semiconductors |
08/27/1986 | EP0192280A2 Method of producing sheets of crystalline material |
08/26/1986 | US4607591 For chemical vapor deposition |
08/26/1986 | CA1210526A1 Device having semi-insulating indium phosphides based compositions |
08/26/1986 | CA1210220A1 High purity silane and silicon production |
08/20/1986 | EP0191505A2 Method of producing sheets of crystalline material |
08/20/1986 | EP0191504A2 Method of producing sheets of crystalline material |
08/20/1986 | EP0191503A2 Method of producing sheets of crystalline material |
08/20/1986 | EP0191023A1 Tubular quartz-glass element with a flange. |
08/14/1986 | WO1986004734A1 Growth of lattice-graded epilayers |
08/12/1986 | US4605542 Heating carbon black in an inert atmosphere with silica recovered from geothermal water |
08/12/1986 | CA1209452A1 Heterostructure comprising a heteroepitaxial multiconstituent material |
08/12/1986 | CA1209330A1 Inverted positive vertical flow chemical vapor deposition chamber |
08/05/1986 | US4604273 Process for the growth of alpha silicon nitride whiskers |
08/05/1986 | US4604231 Silicon fiber and method of making the same |
07/30/1986 | CN85109212A Growth of lattice-graded epilayers |
07/29/1986 | CA1208812A1 Tetramethyltin dopant source for mocvd grown epitaxial semiconductor layers |
07/22/1986 | US4601888 Protection of semiconductor substrates during epitaxial growth processes |
07/16/1986 | EP0187402A1 Method of manufacturing preferentially oriented (111)-tungsten |
06/24/1986 | US4596721 Vacuum evaporating films of alkali metal polyphosphide |
06/24/1986 | US4596626 Disposing on surface of base a low melting material which is capable of transformation to macrocrystalline or single crystal form, treating to form primary substrate having macrocrystalline or single crystal form |
06/11/1986 | EP0184317A2 Graphite fibre growth employing nuclei derived from iron pentacarbonyl |
06/10/1986 | CN85109258A Method of manufacturing tungsten perferentially orientated in the <111> direction |
06/05/1986 | WO1986003231A1 Chemical beam deposition method |
06/03/1986 | US4593168 Method and apparatus for the heat-treatment of a plate-like member |
06/03/1986 | US4592933 High efficiency homogeneous chemical vapor deposition |
06/03/1986 | US4592792 Using a mixture of silicon and chloride source gas; controlling temperature |
06/03/1986 | US4592307 Vapor phase deposition apparatus |
05/27/1986 | US4591492 Treatment with sulfuric, hydrochloric, or nitric acid prior to calcination |
05/22/1986 | WO1986002951A1 Method of growing crystalline layers by vapour phase epitaxy |
05/21/1986 | EP0181624A1 Coating of semiconductor wafers and apparatus therefor |
05/14/1986 | EP0180751A2 Method of making gallium arsenide thin-film solar cells |
05/13/1986 | US4587928 Impeameable process tube of sintered silicon carbide |
05/09/1986 | WO1986002776A1 Technique for the growth of epitaxial compound semiconductor films |
04/30/1986 | EP0179670A2 Production of silicon carbide cobweb whiskers |
04/15/1986 | US4582560 In situ production of silicon crystals on substrate for use in solar cell construction |
04/09/1986 | EP0176770A2 Fluid wall reactor |
04/08/1986 | US4581248 Semiconductors, controlled and uniform heating |
04/01/1986 | US4579699 Mixing silicon with amorphous silicon nitride and pore former, comaction, removal of pore former, and reacting with nitrogen |
04/01/1986 | US4579621 Anisotropic dry etching of insulating film, exposing to low-pressure gas |
04/01/1986 | US4579080 Induction heated reactor system for chemical vapor deposition |
03/26/1986 | EP0175601A1 Method and apparatus for obtaining a gas flow containing a gaseous compound, especially for use in an epitaxy reactor |
03/26/1986 | EP0175030A2 Growth of semiconductors and apparatus for use therein |
03/25/1986 | US4578142 Method for growing monocrystalline silicon through mask layer |
03/25/1986 | CA1202168A1 Continuous silicon carbide whisker production |
03/19/1986 | EP0174622A2 A process for preparing fine fibers |
03/11/1986 | US4575464 Vapor deposition; purity |
03/05/1986 | EP0173642A2 Photoactive pyrite film, method for its preparation and application of such a pyrite film |
03/05/1986 | EP0173591A1 Process and reactor for vapour phase epitaxial growth |
03/05/1986 | EP0173448A2 Method of forming a III-V semiconductor layer |
03/05/1986 | EP0172876A1 Deposition technique. |
02/25/1986 | US4572873 Crystallites oriented at an angle to substrate of not more than 45degrees |
02/25/1986 | US4572101 Side lifting wafer boat assembly |
02/25/1986 | CA1201219A1 Low temperature process for depositing epitaxial layers |
02/13/1986 | WO1986000973A1 Tubular quartz-glass element with a flange |
02/13/1986 | WO1986000831A1 Method for producing thin films of rare earth chalcogenides |
02/12/1986 | EP0170800A1 Heater assembly for molecular beam epitaxy furnace |
02/11/1986 | US4569452 Silica glass tray made for wafers |
02/05/1986 | EP0170362A1 Process for producing silicon carbide whisker |
02/04/1986 | US4568397 Directing metalorganic vapors toward substrate; warming with radiant energy |
01/28/1986 | US4567352 Flashlight-radiant apparatus |
01/21/1986 | US4565741 Boron nitride film and process for preparing same |