| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/25/2009 | WO2005084231A3 Germanium deposition |
| 06/18/2009 | WO2009075585A1 Method of depositing a doped zinc oxide film, a conductive zinc oxide film and use of the doped zinc oxide film |
| 06/18/2009 | US20090156004 Method for forming tungsten materials during vapor deposition processes |
| 06/18/2009 | US20090156003 Method for depositing tungsten-containing layers by vapor deposition techniques |
| 06/18/2009 | US20090155986 Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 06/18/2009 | US20090151623 Formation and applications of high-quality epitaxial films |
| 06/18/2009 | DE112007001605T5 Zinkoxiddünnfilm vom p-Typ und Verfahren zur Ausbildung desselben The same p-type zinc oxide thin film and method of forming |
| 06/18/2009 | DE102008062040A1 Epitaxiewafer und Verfahren zu dessen Herstellung Epitaxial wafers and process for its preparation |
| 06/17/2009 | EP1678353A4 Atomic layer deposition of hafnium-based high-k dielectric |
| 06/17/2009 | EP1287187B1 Chemical vapor deposition process |
| 06/17/2009 | CN101459215A Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 06/17/2009 | CN100501914C Heat treatment device and method for manufacturing semiconductor device |
| 06/17/2009 | CN100500950C Nanostructures and methods for manufacturing the same |
| 06/16/2009 | US7547615 Deposition over mixed substrates using trisilane |
| 06/16/2009 | US7547363 Solid organometallic compound-filled container and filling method thereof |
| 06/16/2009 | US7547360 Reduction of carbon inclusions in sublimation grown SiC single crystals |
| 06/16/2009 | US7547359 Method of altering crystal structure of group 13 element nitride, group 13 element nitride and structure material containing cubic nitride |
| 06/11/2009 | WO2009072631A1 Method for manufacturing nitride semiconductor element, and nitride semiconductor element |
| 06/11/2009 | US20090148984 BULK GaN AND AlGaN SINGLE CRYSTALS |
| 06/11/2009 | US20090148982 Method of Manufacturing Compound Semiconductor Devices |
| 06/11/2009 | US20090148976 Method for fabricating semiconductor epitaxial layers using metal islands |
| 06/10/2009 | EP2067884A1 III Nitride crystal substrate, and light-emitting device and method of its manufacture |
| 06/10/2009 | EP2066496A2 Equipment for high volume manufacture of group iii-v semiconductor materials |
| 06/10/2009 | DE10247017B4 SiC-Einkristall, Verfahren zur Herstellung eines SiC-Einkristalls, SiC-Wafer mit einem Epitaxiefilm und Verfahren zur Herstellung eines SiC-Wafers, der einen Epitaxiefilm aufweist SiC single crystal, methods for producing an SiC single crystal, SiC wafer with an epitaxial film and method for manufacturing a SiC wafer having an epitaxial film |
| 06/10/2009 | CN101451267A Active gas flow control device for growing silicon epitaxy layer |
| 06/10/2009 | CN101451266A Telescopic arm for grasping silicon wafer and locating method thereof |
| 06/10/2009 | CN100497755C Optical quality diamond material |
| 06/04/2009 | WO2009069550A1 Method for manufacturing iii nitride semiconductor, method for manufacturing iii nitride semiconductor light emitting element, iii nitride semiconductor light emitting element, and lamp |
| 06/04/2009 | US20090139447 Method for forming crystalline semiconductor film, method for manufacturing thin film transistor, and method for manufacturing display device |
| 06/04/2009 | US20090139401 Single-crystalline organic carboxylic acid metal complex, process for producing the same, and use thereof |
| 06/04/2009 | DE112007001814T5 Verfahren zum Bilden kohlenstoffhaltiger Siliziumepitaxieschichten A method for forming carbon-Siliziumepitaxieschichten |
| 06/04/2009 | DE102007057241A1 Method for producing a stack of layers on a crystalline substrate, which is free from nitride compound semiconductor by using metal organic gas-phase deposition, comprises forming a nitride-containing buffer layer on the substrate |
| 06/03/2009 | EP2065489A1 PROCESS FOR PRODUCING GaN SINGLE-CRYSTAL, GaN THIN-FILM TEMPLATE SUBSTRATE AND GaN SINGLE-CRYSTAL GROWING APPARATUS |
| 06/03/2009 | EP2064374A1 Method for the growth of indium nitride |
| 06/03/2009 | CN101445956A Method for epitaxial growth of nitride films |
| 06/03/2009 | CN101445955A Device for space-modulating atomic layer chemical vapour deposition epitaxial growth and method thereof |
| 06/02/2009 | US7540919 Solidification of crystalline silicon from reusable crucible molds |
| 06/02/2009 | US7540918 Atomic layer deposition equipment and method |
| 06/02/2009 | CA2347425C Fabrication of gallium nitride layers by lateral growth |
| 05/28/2009 | WO2006028868A3 Method and apparatus for growth of multi-component single crystals |
| 05/28/2009 | US20090136686 Methods for Controllably Induction Heating an Article |
| 05/28/2009 | DE102008056195A1 Manufacturing epitaxial film of semiconductor component, by melting near-surface region of semiconductor substrate using laser radiation, and epitaxially depositing semiconductor layer on single-crystal recrystallized surface of substrate |
| 05/27/2009 | CN101443488A Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate |
| 05/27/2009 | CN101443487A Source container of a VPE reactor |
| 05/27/2009 | CN101443476A High crystalline quality synthetic diamond |
| 05/27/2009 | CN101443265A Method for metal-free synthesis of epitaxial semiconductor nanowires on Si |
| 05/27/2009 | CN101441999A Semi-insulating nitride semiconductor substrate and method of manufacturing the same, nitride semiconductor epitaxial substrate, and field-effect transistor |
| 05/27/2009 | CN101440521A Semiconductor crystal growing method, semiconductor crystal substrate fabrication method, and semiconductor crystal substrate |
| 05/27/2009 | CN101440520A Semiconductor crystal growing method, semiconductor crystal substrate fabrication method, and semiconductor crystal substrate |
| 05/27/2009 | CN100492587C Substrate processing apparatus and substrate processing method |
| 05/26/2009 | US7537660 Crystallization apparatus, optical member for use in crystallization apparatus, crystallization method, manufacturing method of thin film transistor, and manufacturing method of matrix circuit substrate of display |
| 05/21/2009 | US20090130837 In situ deposition of a low k dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application |
| 05/21/2009 | US20090126631 Chemical vapor deposition reactor having multiple inlets |
| 05/20/2009 | EP2060663A1 Oxygen-doped N-type gallium nitride single crystal substrate |
| 05/20/2009 | EP2060662A2 MBE device and method of its operation |
| 05/20/2009 | DE112007000836T5 Herstellungsverfahren für Halbleiterkristall und Halbleitersubstrat Manufacturing processes for semiconductor crystal and semiconductor substrate |
| 05/20/2009 | DE102007054851A1 MBE-Einrichtung und Verfahren zu deren Betrieb MBE device and method for its operation |
| 05/20/2009 | CN101437987A Growing large surface area gallium nitride crystals |
| 05/20/2009 | CN101435104A Method for calibrating position of manipulator on film deposition machine station according to silicon nitride film stress |
| 05/20/2009 | CN100490075C Susceptor and vapor growth device |
| 05/19/2009 | US7534977 Heat treatment apparatus and method of manufacturing a semiconductor device |
| 05/19/2009 | US7534631 Apparatus for measuring semiconductor physical characteristics |
| 05/19/2009 | US7534412 Large-volume CaF2 single crystals with reduced scattering and improved laser stability, and uses thereof |
| 05/19/2009 | US7534310 Single crystal GaN substrate, method of growing single crystal GaN and method of producing single crystal GaN substrate |
| 05/19/2009 | US7534296 Electrically conductive diamond electrodes |
| 05/16/2009 | CA2643960A1 Mbe device and method for the operation thereof |
| 05/14/2009 | WO2009060770A1 Susceptor for vapor deposition |
| 05/14/2009 | WO2009042363A3 Faceted ceramic fibers, tapes or ribbons and epitaxial devices therefrom |
| 05/14/2009 | US20090124053 Fabrication of nanowires and nanodevices |
| 05/13/2009 | EP1405018A4 Wafer boat with arcuate wafer support arms |
| 05/13/2009 | CN101432471A Method for manufacturing gallium nitride crystal and gallium nitride wafer |
| 05/13/2009 | CN101432470A Method and apparatus for preparation of granular polysilicon |
| 05/13/2009 | CN101431018A Method for gallium nitride film growth on graphic sapphire substrate |
| 05/12/2009 | US7531679 Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 05/12/2009 | CA2463169C Method and device for fabricating semiconductor light emitting elements |
| 05/12/2009 | CA2344342C Production of bulk single crystals of aluminum nitride, silicon carbide and aluminum nitride:silicon carbide alloy |
| 05/07/2009 | WO2006135662A3 Perovskite-based thin film structures on miscut semiconductor substrates |
| 05/07/2009 | WO2005052998A9 Gas distribution showerhead featuring exhaust apertures |
| 05/07/2009 | US20090114924 Lightly doped silicon carbide wafer and use thereof in high power devices |
| 05/07/2009 | US20090114887 Bulk, free-standing cubic III-N substrate and a method for forming same. |
| 05/07/2009 | DE102005024118B4 Vorrichtung und Verfahren zur Reduktion von Partikeln bei der thermischen Behandlung rotierender Substrate Device and method for reduction of particles in the thermal treatment rotating substrates |
| 05/06/2009 | EP2055813A2 Device for manufacturing sic single crystal and method for the same |
| 05/06/2009 | EP2055811A2 Nitride semiconductor substrate and method of manufacturing the same and field-effect transistor |
| 05/06/2009 | EP1393352A4 Semiconductor device, semiconductor layer and production method thereof |
| 05/06/2009 | CN101426966A Chemically attached diamondoids for CVD diamond film nucleation |
| 05/06/2009 | CN101426965A Production of bulk single crystals of silicon carbide |
| 05/06/2009 | CN101425474A Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
| 05/06/2009 | CN101423977A Susceptor for epitaxial layer forming apparatus, epitaxial layer forming apparatus, epitaxial wafer, and method of manufacturing epitaxial wafer |
| 05/06/2009 | CN101423930A Showerhead design with precursor source |
| 05/06/2009 | CN100485867C Epitaxial growth of lanthanum aluminate film material on silicon substrate and preparation method |
| 05/06/2009 | CN100485084C Atomic layer deposition method |
| 04/30/2009 | WO2009055750A1 Methods and apparatus for smart abatement using an improved fuel circuit |
| 04/30/2009 | WO2007002024A3 Algainn-based lasers produced using etched facet technology |
| 04/30/2009 | WO2006023699A3 Photonic crystal, conjugated polymers suitable for photonic crystals, and a method for synthesizing conjugated polymers |
| 04/30/2009 | US20090108407 Oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 04/30/2009 | US20090107394 Device for manufacturing sic single crystal and method for the same |
| 04/29/2009 | EP2052101A1 Method and apparatus for preparation of granular polysilicon |
| 04/29/2009 | CN101418466A Method for monitoring equipment parameter variation of germanium and silicon epitaxial reaction chamber |
| 04/29/2009 | CN101418465A Hvpe showerhead design |
| 04/29/2009 | CN100483628C Fabrication of crystalline materials over substrates |