Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
08/2010
08/19/2010WO2010092235A1 Gas deposition reactor
08/19/2010US20100206218 Method of making group III nitride-based compound semiconductor
08/19/2010US20100206217 Method for separating surface layer or growth layer of diamond
08/19/2010US20100206216 Method of Producing High Quality Relaxed Silicon Germanium Layers
08/19/2010DE102010001720A1 Einkristallines SiC-Substrat, einkristalliner epitaktischer SiC-Wafer und SiC-Halbleitervorrichtung Single crystal SiC substrate, a single-crystal epitaxial SiC wafer and the SiC semiconductor device
08/18/2010EP2218806A1 Aln crystal and method for growing the same
08/18/2010CN201553779U Tail gas treatment device of PECVD equipment
08/18/2010CN101809769A Compound semiconductor epitaxial wafer and process for producing the same
08/18/2010CN101809710A Method of manufacturing a structure comprising a substrate and a layer deposited on one of its faces
08/18/2010CN101404248B GaN single-crystal substrate and method for producing GaN single crystal
08/18/2010CN101307485B Nitrogen source ionization method and device for semiconductor material vapor deposition growth system
08/17/2010US7776724 Methods of filling a set of interstitial spaces of a nanoparticle thin film with a dielectric material
08/17/2010US7776154 Preparation method of a coating of gallium nitride
08/12/2010US20100199910 Method of manufacturing silicon carbide single crystal
08/11/2010EP2215291A1 Low pressure method annealing diamonds
08/11/2010CN101802273A Epitaxial SIC single crystal substrate and method for manufacturing epitaxial SIC single crystal substrate
08/11/2010CN101802272A PECVD process chamber with cooled backing plate
08/11/2010CN101800170A Method for producing group iii nitride semiconductor and template substrate
08/11/2010CN101798057A Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
08/11/2010CN101459042B Exhaust system and wafer heat treatment apparatus
08/11/2010CN101235539B Epitaxy growing method for La1-xCaxMnO3 single crystal thin film
08/11/2010CN101225547B Growth chamber and gallium nitride material growth method
08/11/2010CA2653581A1 Migration and plasma enhanced chemical vapour deposition
08/10/2010US7772585 Nitride semiconductor substrate and method of producing same
08/10/2010US7771693 etching away by reactive ion etching using O2 and CF4, prior to single crystal growth, in etching thickness off the surface of the seed substrate which has been mechanically polished, thereby removing the work-affected layers caused by mechanical polishing, then growing a single crystal
08/10/2010US7771534 Method of growing oxide thin films
08/10/2010US7771533 Atomic-layer-chemical-vapor-deposition of films that contain silicon dioxide
08/05/2010WO2010087518A1 Epitaxial silicon carbide single crystal substrate and mehtod for producing same
08/05/2010US20100193664 Seed Layers and Process of Manufacturing Seed Layers
08/04/2010EP1885917B1 Epitaxial reactor with device for introducing reaction gases
08/04/2010EP1570107B1 Susceptor system
08/04/2010EP1423259B1 parting method for forming free-standing (al,ga,in)n article
08/03/2010US7767307 Crack free monocrystalline thick films; having intermediate layer with lattice parameter smaller than outer layers; simple, low cost, reproducible production
08/03/2010US7767021 Growing method of SiC single crystal
07/2010
07/29/2010WO2010062419A3 Diamond bodies grown on sic substrates and associated methods
07/29/2010US20100190322 Compound semiconductor substrate
07/29/2010US20100190000 Method of fabricating a composite structure with a stable bonding layer of oxide
07/28/2010CN1908251B Method of growing single crystal GaN, method of making single crystal GaN substrate and single crystal GaN substrate
07/28/2010CN101787561A Growing method of Fe3N material
07/28/2010CN101499407B Gas dispensing device and semiconductor process plant employing the same
07/27/2010US7764872 Cooling device, and apparatus and method for manufacturing image display panel using cooling device
07/27/2010US7763529 heating substrate, carburizating with hydrocarbon-containing gas to form carbide layer, annealing; free of cooling steps; cost efficiency
07/27/2010US7763113 Photocatalyst material and method for preparation thereof
07/22/2010US20100181648 Localized synthesis and self-assembly of nanostructures
07/21/2010EP2207910A1 Method for the production of semiconductor ribbons from a gaseous feedstock
07/21/2010CN101311365B Method for preparing room-temperature ferromagnetic Fe doped ZnO nanometer wire
07/15/2010DE102009004557A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung von epitaxierten Siliciumscheiben Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers
07/14/2010CN101775648A Multilayer substrate and method for producing the same, diamond film and method for producing the same
07/14/2010CN101775645A Base material for forming single crystal diamond film and method for producing single crystal diamond using the same
07/13/2010US7754182 Carbon nanotube array and method for forming same
07/13/2010US7754180 Ultrahard diamonds and method of making thereof
07/13/2010US7754013 Apparatus and method for atomic layer deposition on substrates
07/13/2010US7754012 Apparatus for production of crystal of group III element nitride and process for producing crystal of group III element nitride
07/08/2010US20100173483 GaN SINGLE-CRYSTAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR EPITAXIAL SUBSTRATE, NITRIDE TYPE SEMICONDUCTOR DEVICE, AND METHODS OF MAKING THE SAME
07/07/2010EP2204477A1 Method For Growth Of GaN Single Crystal, Method For Preparation Of GaN Substrate, Process For producing GaN-Based Element, and GaN-Based Element
07/07/2010EP2203932A1 Method of manufacturing a structure comprising a substrate and a layer deposited on one of its faces
07/07/2010CN101771121A Structure of SiC or Si substrate GaN-based crystal and method for growing same
07/07/2010CN101770971A Wafer bearing device
07/06/2010US7749871 Method for depositing nanolaminate thin films on sensitive surfaces
07/01/2010WO2010072380A1 Mocvd reactor having cylindrical gas inlet element
07/01/2010WO2010072273A1 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
07/01/2010US20100163751 Scintillator panel
07/01/2010US20100162945 Gallium nitride-based material and method of manufacturing the same
07/01/2010CA2747574A1 Manufacturing of low defect density free-standing gallium nitride substrates and devices fabricated thereof
06/2010
06/30/2010EP1483782B1 Production method of sic monitor wafer
06/30/2010CN101764054A Compound semiconductor epi-wafer and preparation method thereof
06/30/2010CN101760778A Method for manufacturing semiconductor material bar
06/29/2010US7745813 Nanostructures and methods for manufacturing the same
06/29/2010US7745315 Deposit submonolayer of metal catalyst on near-lattice-matched substrate; diffuse metal catalyst atoms on surface to form metal catalyst nanoclusters; epitaxial alignment with the crystallographic template substrate, where the ratio of nitrogen precursor molecules is > 1
06/24/2010WO2010043716A3 Method for the controlled growth of a graphene film
06/24/2010US20100158785 Method for Growing Group III-Nitride Crystals in Supercritical Ammonia Using an Autoclave
06/24/2010DE102008062685A1 Producing silicon-germanium layer, comprises depositing graded silicon-germanium buffer layer on substrate made of single-crystalline silicon with surface, and depositing the silicon-germanium layer on the silicon-germanium buffer layer
06/24/2010DE102008055582A1 MOCVD-Reaktor mit zylindrischem Gaseinlassorgan MOCVD reactor with cylindrical gas inlet element
06/23/2010EP2200071A1 GaN single crystal substrate and method of making the same using homoepitaxy
06/23/2010EP2199436A1 Gan epitaxial substrate, semiconductor device and methods for manufacturing gan epitaxial substrate and semiconductor device
06/23/2010EP2199434A1 Method for forming microscopic structures on a substrate
06/23/2010EP2199433A1 Method for forming microscopic structures on a substrate
06/23/2010CN101748480A Method for growing ZnO epitaxial film on Si substrate
06/23/2010CN101307499B Si3N4 crystal whisker preparation process
06/22/2010US7740824 use in a wide range of optical applications such as, for example, optical windows, laser windows, optical reflectors, optical refractors and gratings, and etalons;controlled low level of nitrogen to control the development of crystal defects and thus achieve a diamond material having key characteristics
06/22/2010US7740703 Semiconductor film formation device
06/17/2010WO2010068916A1 Polycrystalline group iii metal nitride with getter and method of making
06/17/2010WO2010068419A2 Production of single crystal cvd diamond rapid growth rate
06/16/2010EP2196566A1 EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE AND METHOD FOR MANUFACTURING EPITAXIAL SiC SINGLE CRYSTAL SUBSTRATE
06/16/2010EP2196565A1 Sic epitaxial substrate and process for producing the same
06/16/2010CN1804116B Highly-oriented diamond film, method for manufacturing the same, and applicaiton thereof
06/16/2010CN101740690A Method for improving activation efficiency of magnesium in III-V family nitrides
06/16/2010CN101736400A Method for growing GaN-based luminous crystal film by metal organic chemical vapor deposition
06/16/2010CN101736399A Method for preparing tin oxide single crystal film with orthogonal structure
06/16/2010CN101736398A Method for growing AlInN monocrystal epitaxial film
06/16/2010CN101302648B 氮化镓薄膜外延生长结构及方法 Epitaxial growth of GaN film structure and method
06/16/2010CN101203939B Method for processing diamond and appliance utilizing diamond semiconductor
06/15/2010US7736435 Method of producing single crystal
06/10/2010WO2009153116A3 Diamond nano-tip and method for production thereof
06/10/2010US20100142577 Nitride semiconductor laser device
06/10/2010US20100140755 Rare-earth oxides, rare-earth nitrides, rare-earth phosphides and ternary alloys
06/10/2010US20100140745 Pulsed selective area lateral epitaxy for growth of iii-nitride materials over non-polar and semi-polar substrates
06/10/2010US20100140224 Plasma Processing Apparatus And Plasma Processing Method
06/10/2010US20100139762 Compound-type thin film, method of forming the same, and electronic device using the same
06/10/2010US20100139554 Methods and apparatus for making gallium nitride and gallium aluminum nitride thin films
1 ... 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 31 32 33 34 35 36 ... 134