| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 09/03/2009 | WO2009106942A1 Semiconductor growth system which includes a boron carbide reactor component |
| 09/03/2009 | WO2009106023A1 Method of making nucleation layer for diamond growth |
| 09/03/2009 | DE102007028293B4 Plasmareaktor, dessen Verwendung und Verfahren zur Herstellung einkristalliner Diamantschichten A plasma reactor, its use and methods for preparing single-crystal diamond films |
| 09/02/2009 | EP2096196A1 Method for manufacturing an epitaxial silicon wafer |
| 09/02/2009 | CN101519799A Method for preparing non-polar GaN thick film on sapphire substrate |
| 09/02/2009 | CN101519796A Controlled edge resistivity in silicon wafer |
| 09/02/2009 | CN100535201C Electron tubes type equipment for preparing nano material |
| 09/01/2009 | CA2373170C Method and apparatus for epitaxially growing a material on a substrate |
| 08/27/2009 | WO2009103925A2 Growth of carbon nanotubes on carbon or metal substrates |
| 08/27/2009 | WO2007010645A8 Gallium nitride wafer |
| 08/27/2009 | US20090215248 AlxInyGa1-x-yN MIXTURE CRYSTAL SUBSTRATE, METHOD OF GROWING SAME AND METHOD OF PRODUCING SAME |
| 08/26/2009 | CN101517759A Method for manufacturing group iii nitride compound semiconductor light-emitting device, group iii nitride compound semiconductor light-emitting device, and lamp |
| 08/26/2009 | CN101517134A Process for producing gan single-crystal, gan thin-film template substrate and gan single-crystal growing apparatus |
| 08/26/2009 | CN101514484A Porous material substrate used in GaN film grown by HVPE method and method thereof |
| 08/26/2009 | CN101514483A Method for preparing AlxGa(1-x)N triplet alloy semiconductor film at normal temperature |
| 08/25/2009 | US7579263 Threading-dislocation-free nanoheteroepitaxy of Ge on Si using self-directed touch-down of Ge through a thin SiO2 layer |
| 08/25/2009 | CA2543950C Single crystal gan substrate, method of growing same and method of producing same |
| 08/25/2009 | CA2412853C Single crystal diamond prepared by cvd |
| 08/20/2009 | US20090205563 Temperature-controlled purge gate valve for chemical vapor deposition chamber |
| 08/19/2009 | EP2090680A1 Sapphire substrate, nitride semiconductor luminescent element using the sapphire substrate, and method for manufacturing the nitride semiconductor luminescent element |
| 08/19/2009 | EP1367150B1 Production method for semiconductor crystal and semiconductor luminous element |
| 08/19/2009 | CN101509146A Method of manufacturing group III nitride crystal |
| 08/19/2009 | CN101509145A Method for growing nonpolar a face GaN film on lithium aluminate substrate |
| 08/19/2009 | CN101509144A Method for improving nonpolar a face GaN film quality on lithium aluminate substrate |
| 08/19/2009 | CN100530543C 外延生长方法 Epitaxial growth |
| 08/19/2009 | CN100529198C Support system for treating device |
| 08/18/2009 | US7576372 Method for making free-standing AlGaN wafer, wafer produced thereby, and associated methods and devices using the wafer |
| 08/18/2009 | US7575946 Method for making compound semiconductor and method for making semiconductor device |
| 08/13/2009 | WO2009098979A1 Iii nitride semiconductor epitaxial substrate and method for manufacturing the same |
| 08/13/2009 | WO2008090514A3 Diamond electronic devices and methods for their manufacture |
| 08/13/2009 | WO2008090513A3 Diamond electronic devices including a surface and methods for their manufacture |
| 08/12/2009 | CN101506947A Method for producing a doped III-N solid crystal and a free-standing doped III-N substrate, and doped III-N solid crystal and free-standing doped III-N substrate |
| 08/12/2009 | CN101503826A Preparation of AlN growth face composite substrate and nitride semiconductor device |
| 08/12/2009 | CN101503824A Nitride semiconductor single-crystal substrate and method of its synthesis |
| 08/11/2009 | US7572333 Method for manufacturing semiconductor device |
| 08/11/2009 | US7572331 Method of manufacturing a wafer |
| 08/06/2009 | WO2009096578A1 Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device |
| 08/06/2009 | WO2009096270A1 AlN HETEROEPITAXIAL CRYSTAL, METHOD FOR PRODUCING THE SAME, BASE SUBSTRATE FOR GROUP III NITRIDE FILM USING THE CRYSTAL, LIGHT-EMITTING DEVICE, SURFACE ACOUSTIC WAVE DEVICE, AND SPUTTERING APPARATUS |
| 08/06/2009 | WO2009096125A1 Iii-group nitride single-crystal ingot, iii-group nitride single-crystal substrate, method for manufacturing iii-group nitride single-crystal ingot, and method for manufacturing iii-group nitride single-crystal substrate |
| 08/06/2009 | WO2008097484A3 Methods of depositing epitaxial thermoelectric films having reduced crack and/or surface defect densities and related devices |
| 08/06/2009 | US20090197399 Method of growing group iii-v compound semiconductor, and method of manufacturing light-emitting device and electron device |
| 08/06/2009 | US20090197118 Method for producing Group III nitride-based compound semiconductor, wafer, and Group III nitride-based compound semiconductor device |
| 08/06/2009 | US20090194018 Apparatus and method for manufacturing epitaxial wafer |
| 08/05/2009 | EP2086003A2 Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device |
| 08/05/2009 | EP2084304A2 Gallium trichloride injection scheme |
| 08/05/2009 | EP2083935A2 Abatement of reaction gases from gallium nitride deposition |
| 08/05/2009 | CN101499416A Method of growing group III-V compound semiconductor, and method of manufacturing light-emitting device and electronic device |
| 08/05/2009 | CN101499415A Method for producing group III nitride-based compound semiconductor, wafer, and group III nitride-based compound semiconductor device |
| 08/05/2009 | CN101499407A Gas dispensing device and semiconductor process plant employing the same |
| 08/05/2009 | CN101498036A Controllable pressure pen ejecting apparatus with automatic alarming function for epitaxial production |
| 08/05/2009 | CN101498035A Controllable pressure pen ejecting apparatus with self-locking function for epitaxial production |
| 08/05/2009 | CN101498034A Preparation of transient metal doped nano zinc oxide crystal whisker |
| 08/05/2009 | CN101497443A Reactor cleaning apparatus |
| 07/30/2009 | US20090189185 Epitaxial growth of relaxed silicon germanium layers |
| 07/30/2009 | US20090188431 Substrate processing apparatus and method for manufacturing a semiconductor device |
| 07/29/2009 | EP2083099A1 Process for producing group iii element nitride crystal |
| 07/29/2009 | CN101495675A Chemical vapor deposition reactor having multiple inlets |
| 07/29/2009 | CN101492834A Method capable of preventing reaction liquid from polluting wafer |
| 07/29/2009 | CN100519831C Annealing single crystal chemical vapor depositon diamonds |
| 07/28/2009 | US7566364 Method of fabricating orientation-controlled single-crystalline wire and method of fabricating transistor having the same |
| 07/28/2009 | US7565879 Plasma processing apparatus |
| 07/23/2009 | WO2009090923A1 Laminate and process for producing the laminate |
| 07/23/2009 | WO2009090904A1 Method for growing group iii nitride crystal |
| 07/23/2009 | WO2009090840A1 Method for growing gallium nitride crystal and method for producing gallium nitride substrate |
| 07/23/2009 | WO2009090821A1 Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate |
| 07/23/2009 | CA2712149A1 Laminated body and the method for production thereof |
| 07/22/2009 | CN101490315A Method of manufacturing substrates having improved carrier lifetimes |
| 07/22/2009 | CN101487138A Silicon wafer bearing disk for epitaxial manufacture process |
| 07/22/2009 | CN100517571C 3-5 group compound semiconductor and method for preparation thereof |
| 07/16/2009 | WO2009087104A1 Dosimeter based on monocrystalline synthetic diamond |
| 07/16/2009 | US20090181169 Method for growing thin films |
| 07/16/2009 | US20090178611 Gallium trichloride injection scheme |
| 07/16/2009 | DE10155712B4 Zinkoxid-Schicht und Verfahren zu dessen Herstellung Zinc oxide layer, and process for its preparation |
| 07/15/2009 | CN101481818A Heating device for micro-area controllable nano functional material synthesis |
| 07/14/2009 | US7560086 Single crystal diamond having 12C, 13C, and phosphorous |
| 07/14/2009 | CA2227615C Silicon nitride nanowhiskers and method of making same |
| 07/09/2009 | WO2009086259A1 Epitaxial barrel susceptor having improved thickness uniformity |
| 07/09/2009 | WO2009085376A2 Separate injection of reactive species in selective formation of films |
| 07/09/2009 | US20090175777 Single crystal diamond prepared by cvd |
| 07/08/2009 | EP2077345A1 Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 07/08/2009 | EP2077344A1 Method of applying a diamond layer to a graphite substrate |
| 07/08/2009 | EP1620294A4 Chemical vapor deposition epitaxial growth |
| 07/08/2009 | EP1397528B1 Cvd reactor with exhaust ring made of graphite |
| 07/08/2009 | CN101476152A Preparation of single crystal ZnSe/Ge heterojunction nano-wire |
| 07/07/2009 | US7556688 Method for achieving low defect density AlGaN single crystal boules |
| 07/02/2009 | WO2009082608A1 Apparatus for delivering precursor gases to an epitaxial growth substrate |
| 07/02/2009 | US20090169743 Arrangement in Connection with ALD Reactor |
| 07/02/2009 | US20090165704 Silicon seed rod assembly of polycrystalline silicon, method of forming the same, polycrystalline silicon producing apparatus, and method of producing polycrystalline silicon |
| 07/02/2009 | DE3907799A1 Hochgradig breitbandige Signalverarbeitungsvorrichtung aus supraleitendem Material, Anwendung auf Mikrowellenschaltung und Verfahren zur Herstellung einer solchen Vorrichtung Highly wideband signal processing apparatus of superconducting material, application to the microwave circuit and method for manufacturing such a device |
| 07/02/2009 | DE112007000313T5 Verfahren zum Aufwachsenlassen von Halbleiter-Heterostrukturen auf der Basis von Galliumnitrid A method for growing of semiconductor heterostructures on the basis of gallium nitride |
| 07/01/2009 | EP2074245A1 Process for producing a silicon carbide substrate for microelectronic applications |
| 07/01/2009 | EP2074244A2 Crystal growth method and reactor design |
| 07/01/2009 | CN101469446A Method for lateral epitaxial overgrowth of gallium nitride on silicon substrate |
| 07/01/2009 | CN100508112C Method for manufacturing semiconductor device |
| 07/01/2009 | CN100507073C Receptor system |
| 06/30/2009 | US7553694 Methods of forming a high conductivity diamond film and structures formed thereby |
| 06/30/2009 | US7553373 Silicon carbide single crystal and production thereof |
| 06/30/2009 | US7553370 Crystal growth method for nitride semiconductor and formation method for semiconductor device |
| 06/30/2009 | US7553369 Method of altering the properties of a thin film and substrate implementing said method |
| 06/30/2009 | US7553368 Process for manufacturing a gallium rich gallium nitride film |