| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 03/03/2011 | WO2011023512A1 Cvd method and cvd reactor |
| 03/02/2011 | EP2290136A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices |
| 03/02/2011 | EP2290135A1 Method for achieving improved epitaxy quality (surface texture and defect densitity) on free-standing (aluminum, indium, gallium) nitride ((Al, In, Ga)N) substrates for opto-electronic and electronic devices |
| 03/02/2011 | EP2290123A1 Processes for producing thin metal nitride layers, inter alia making use of a selective decomposition of alcoholates, processes for hardening a surface, for obtaining thin oxygen compound layers, articles comprising said layers and uses thereof, and a process for obtaining metal hydrides and aldehydes/ketones |
| 03/02/2011 | EP1536043B1 N-type semiconductor diamond producing method and semiconductor diamond |
| 03/02/2011 | CN201753372U Load-bearing disc for production of epitaxial wafer |
| 03/02/2011 | CN201753371U Cover for production of epitaxial wafer |
| 03/01/2011 | US7897938 Scintillator panel |
| 03/01/2011 | US7896965 Method for the production of a plurality of optoelectronic semiconductor chips and optoelectronic semiconductor chip |
| 02/24/2011 | WO2011022637A1 Dual heating for precise wafer temperature control |
| 02/24/2011 | WO2010129718A3 Method and reactor for growing gallium nitride crystals using ammonia and hydrogen chloride |
| 02/24/2011 | US20110045281 Reduction of basal plane dislocations in epitaxial sic |
| 02/24/2011 | DE102010026987A1 Herstellvorrichtung und -verfahren für Halbleiterbauelement Fabrication and method for semiconductor device |
| 02/23/2011 | EP2287368A2 Apparatus and method for producing (Ai, Ga, In)N material using an in-situ laser for parting this material |
| 02/23/2011 | EP2286459A1 Ultratough single crystal boron-doped diamond |
| 02/23/2011 | EP2286006A1 Methods and apparatus for deposition reactors |
| 02/22/2011 | US7893454 Method for producing structured substrate, structured substrate, method for producing semiconductor light emitting device, semiconductor light emitting device, method for producing semiconductor device, semiconductor device, method for producing device, and device |
| 02/22/2011 | US7893433 Thin films and methods of making them |
| 02/22/2011 | US7892970 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 02/22/2011 | US7892879 Manufacture of cadmium mercury telluride on patterned silicon |
| 02/17/2011 | US20110039071 METHOD OF MANUFACTURING A Si(1-v-w-x)CwAlxNv SUBSTRATE, METHOD OF MANUFACTURING AN EPITAXIAL WAFER, Si(1-v-w-x)CwAlxNv SUBSTRATE, AND EPITAXIAL WAFER |
| 02/17/2011 | US20110036395 Methods for forming nanostructures and photovoltaic cells implementing same |
| 02/17/2011 | US20110036289 Method for growing germanium epitaxial films |
| 02/16/2011 | EP2284298A2 Optical quality diamond material |
| 02/16/2011 | EP2284297A1 Method for achieving improved epitaxy quality (surface texture and defect density) on free-standing (aluminium, indium, gallium) nitride ((AI, In,Ga)N) substrates for opto-electronic and electronic devices |
| 02/16/2011 | CN1782142B Wafer guide, MOCVD equipment, and nitride semiconductor growth method |
| 02/16/2011 | CN101120122B Gas distribution showerhead featuring exhaust apertures |
| 02/15/2011 | US7888235 Fabrication of substrates with a useful layer of monocrystalline semiconductor material |
| 02/15/2011 | US7887936 Substrate with determinate thermal expansion coefficient |
| 02/15/2011 | US7887883 Composition and method for low temperature deposition of silicon-containing films |
| 02/15/2011 | US7887632 Process for producing monocrystal thin film and monocrystal thin film device |
| 02/15/2011 | US7887628 Chemical vapor deposited diamond having a thickness of >2 mm of high purity/quality; single impurity of not greater than 1 ppm and a total impurity content of not greater than 5 ppm; high value electron mobility, wide band gap device; anvils |
| 02/10/2011 | WO2011017439A1 Critical current density enhancement via incorporation of nanoscale ba2renbo6 in rebco films |
| 02/10/2011 | WO2011016828A2 Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 02/10/2011 | US20110031531 Process for forming low defect density heterojunctions |
| 02/10/2011 | US20110030610 High-productivity porous semiconductor manufacturing equipment |
| 02/10/2011 | DE10320133B4 Verfahren zur Herstellung von einkristallinen oder quasi-einkristallinen Diamantschichten und auf einem Körper angeordnete einkristalline oder quasi-einkristalline Diamantschicht A process for the production of single crystalline or quasi-single-crystalline diamond layers and arranged on a body monocrystalline or quasi-monocrystalline diamond layer |
| 02/09/2011 | EP2281300A2 Methods and apparatus for a chemical vapor deposition reactor |
| 02/09/2011 | CN101967680A Method for preparing monoclinic gallium oxide single-crystal film on magnesium oxide substrate |
| 02/09/2011 | CN101967679A Method and adjusting and controlling appearance of zinc oxide whisker |
| 02/09/2011 | CN101388330B Semiconductor manufacture device and method by heating substrate |
| 02/08/2011 | US7883998 Vapor phase growth method |
| 02/03/2011 | WO2011014408A1 Nanowire synthesis |
| 02/03/2011 | US20110026103 Crystal for optical conversion |
| 02/02/2011 | CN101962806A Preparation method of flexible cold cathode material |
| 02/02/2011 | CN101962804A Epitaxial material stress control-based GaN thick film self-separation method |
| 02/02/2011 | CN101962803A Heteroepitaxial growth method for high-quality monocrystalline thick-film material |
| 02/02/2011 | CN101962802A Method for growing GeSn alloy on Si substrate by molecular beam epitaxy |
| 02/02/2011 | CN101311361B Chinese character 'zhi-shaped' nano-belt of periodic SnO2 and method for preparing same |
| 02/02/2011 | CN101303998B Plasma processing apparatus, focus ring, and susceptor |
| 02/01/2011 | US7879148 System and method for producing synthetic diamond |
| 02/01/2011 | US7879147 Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 01/27/2011 | US20110017127 Apparatus and method for producing epitaxial layers |
| 01/27/2011 | US20110017126 Coloured diamond |
| 01/26/2011 | EP2277696A2 Vacinal gallium nitride substrate for high quality homoepitaxy |
| 01/26/2011 | CN101956232A Polycrystalline silicon producing method, apparatus for producing polycrystalline silicon, and polycrystalline silicon |
| 01/26/2011 | CN101481818B Heating device for micro-area controllable nano functional material synthesis |
| 01/26/2011 | CN101072900B CVD reactor comprising an rf-heated treatment chamber |
| 01/25/2011 | US7875536 Nanostructures formed of branched nanowhiskers and methods of producing the same |
| 01/25/2011 | US7875118 Crystallization method and crystallization apparatus |
| 01/20/2011 | WO2011007762A1 Process for production of laminate having aluminum nitride monocrystal layer, laminate produced by the process, process for production of aluminum nitride monocrystal substrate using the laminate, and aluminum nitride monocrystal substrate |
| 01/20/2011 | WO2011007494A1 Method for manufacturing semiconductor epitaxial wafer, and semiconductor epitaxial wafer |
| 01/20/2011 | US20110014112 Method for growing monocrystalline diamonds |
| 01/20/2011 | US20110012172 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods |
| 01/20/2011 | US20110011332 Method and apparatus for producing large, single-crystals of aluminum nitride |
| 01/19/2011 | EP2276061A1 PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNV BASE MATERIAL, AND EPITAXIAL WAFER& xA; |
| 01/19/2011 | EP2276060A1 PROCESS FOR PRODUCING SI(1-V-W-X)CWALXNV BASE MATERIAL, PROCESS FOR PRODUCING EPITAXIAL WAFER, SI(1-V-W-X)CWALXNVBASE MATERIAL, AND EPITAXIAL WAFER & xA; |
| 01/19/2011 | EP2276059A1 Method of controlling stress in gallium nitride films deposited on substrates |
| 01/19/2011 | EP2274457A1 Apparatus and methods for deposition reactors |
| 01/19/2011 | CN101952490A Laminate and process for producing the laminate |
| 01/19/2011 | CN101949058A Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same |
| 01/13/2011 | WO2011004726A1 Method for manufacturing nitride semiconductor substrate |
| 01/13/2011 | US20110008568 Oriented noble metal single crystalline nanowire and preparation method thereof |
| 01/13/2011 | US20110005454 Plasma Reactor, and Method for the Production of Monocrystalline Diamond Layers |
| 01/12/2011 | EP2126161B1 Device and method for selectively depositing crystalline layers using mocvd or hvpe |
| 01/12/2011 | EP2016209B1 Process for producing a iii-n bulk crystal and a free-standing iii -n substrate, and iii -n bulk crystal and free-standing iii-n substrate |
| 01/12/2011 | CN101942696A Si-base reversed extension 3C-SiC monocrystal film and preparation method thereof |
| 01/12/2011 | CN101323975B Method for preparing SnO2-ZnO alloplasm nanobranch |
| 01/11/2011 | US7867881 Method of manufacturing nitride semiconductor substrate |
| 01/06/2011 | WO2011001782A1 Group iii nitride crystal and production method thereof |
| 01/06/2011 | US20110000425 Method of manufacturing semiconductor device, method of manufacturing substrate, and substrate processing apparatus |
| 01/05/2011 | EP1043763B1 Vapor growth apparatus for semiconductor wafers with dopant gas feed assembly |
| 01/05/2011 | DE102009030296A1 Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe A process for producing an epitaxially coated semiconductor wafer, |
| 01/05/2011 | DE102009030295A1 Verfahren zur Herstellung einer Halbleiterscheibe A process for producing a semiconductor wafer |
| 01/04/2011 | US7863178 Method for manufacturing a GaN based optical device |
| 01/04/2011 | US7862790 High temperature, high strength composite nanostructure metal carbides, formed by heating carbon nanotubes with reactive gases to form in situ |
| 01/04/2011 | CA2466077C Apparatus and method for diamond production |
| 12/30/2010 | US20100329965 Diamond material |
| 12/30/2010 | US20100329962 Diamond material |
| 12/30/2010 | US20100327228 Group iii nitride semiconductor epitaxial substrate and method for manufacturing the same |
| 12/29/2010 | WO2010149777A1 Method for making fancy orange coloured single crystal cvd diamond and product obtained |
| 12/29/2010 | EP2267762A2 Semiconductor heterostructures having reduced dislocation pile-ups and related methods |
| 12/29/2010 | EP2267190A1 Large area, uniformly low dislocation density gan substrate and process for making the same |
| 12/29/2010 | EP2267189A1 High surface quality gan wafer and method of fabricating same |
| 12/29/2010 | CN101928990A Epitaxial growth method of GeSn alloy |
| 12/29/2010 | CN101060102B Nitride semiconductor substrate, method of making the same and epitaxial substrate for nitride semiconductor light emitting device |
| 12/29/2010 | CA2765804A1 Method for making fancy orange coloured single crystal cvd diamond and product obtained |
| 12/28/2010 | US7858181 Growth of single crystal nanowires |
| 12/28/2010 | US7857907 Methods of forming silicon nanocrystals by laser annealing |
| 12/23/2010 | WO2010145969A1 Method for equipping an epitaxy reactor |