| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 06/10/2010 | US20100139553 Method of Growing III-Nitride Crystal |
| 06/09/2010 | EP2194167A1 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element |
| 06/09/2010 | CN1942610B Ultrahard diamonds and method of making thereof |
| 06/09/2010 | CN1936111B Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafer |
| 06/09/2010 | CN1936110B Epitaxially coated silicon wafer and method for producing epitaxially coated silicon wafers |
| 06/09/2010 | CN101724896A Method for growing germanium-silicon epitaxies in nonselective way |
| 06/09/2010 | CN101724895A Process for manufacturing polycrystalline silicon |
| 06/09/2010 | CN101311656B Quick-opening type water-cooling structure polycrystalline silicon reducing furnace |
| 06/08/2010 | US7732012 Deposition of high-purity polycrystalline silicon at a high temperature onto a white-heated seed rod in a closed reaction furnace by pyrolysis or hydrogen reduction of a starting silane gas |
| 06/08/2010 | US7731796 Nitrogen semiconductor compound and device fabricated using the same |
| 06/03/2010 | WO2010062419A2 Diamond bodies grown on sic substrates and associated methods |
| 06/02/2010 | EP2192625A1 Method for growth of GaN single crystal, method for preparation of GaN substrate, process for producing GaN-based element, and GaN-based element |
| 06/02/2010 | EP2192624A1 Method For Growth Of GaN Single Crystal, Method For Preparation Of GaN Substrate, Process For producing GaN-Based Element, and GaN-Based Element |
| 06/02/2010 | EP2192211A1 Stable Power Devices on Low-Angle Off-Cut Silicon Carbide Crystals |
| 06/02/2010 | CN201495314U Gas distribution device for thin film deposition device |
| 06/02/2010 | CN101719480A Static cartridge and plasma device |
| 06/02/2010 | CN101431018B Method for gallium nitride film growth on graphic sapphire substrate |
| 06/02/2010 | CN101426965B Production of bulk single crystals of silicon carbide |
| 06/02/2010 | CN101318654B Method for preparing high purity polysilicon particle with fluidized bed and bed fluidizing reactor |
| 06/02/2010 | CN101311340B Method for preparing silicon inverse epitaxial wafer and special equipment thereof |
| 06/02/2010 | CN101303997B Plasma processing apparatus, focus ring, and susceptor |
| 06/02/2010 | CN101281864B Apparatus for improving hydride vapour phase epitaxy growth GaN material homogeneity |
| 06/02/2010 | CN101246836B Substrate carrying platform and process method for its surface |
| 06/02/2010 | CN101165225B IC sheet epitaxy technique |
| 06/02/2010 | CN101158049B Method for preparing P-type transparent conductive oxide CuAlO2 film |
| 06/02/2010 | CN101118865B Substrate support with a protective layer for plasma resistance |
| 06/01/2010 | US7727333 HVPE apparatus and methods for growth of indium containing materials and materials and structures grown thereby |
| 06/01/2010 | US7727332 Process for selective masking of III-N layers and for the preparation of free-standing III-N layers or of devices, and products obtained thereby |
| 06/01/2010 | US7727331 Crystal firm, crystal substrate, and semiconductor device |
| 06/01/2010 | CA2486662C Vapor-phase growth apparatus |
| 05/27/2010 | WO2010060034A1 METHODS FOR PRODUCING GaN NUTRIENT FOR AMMONOTHERMAL GROWTH |
| 05/27/2010 | US20100126406 Production of Single Crystal CVD Diamond at Rapid Growth Rate |
| 05/26/2010 | EP2190006A1 Compound semiconductor substrate, process for producing compound semiconductor substrate, and semiconductor device |
| 05/26/2010 | EP2189555A2 System and method for producing synthetic diamond |
| 05/25/2010 | US7723217 Method for manufacturing gallium nitride single crystalline substrate using self-split |
| 05/20/2010 | WO2010055613A1 Polymer laminate substrate for formation of epitaxially grown film, and manufacturing method therefor |
| 05/20/2010 | US20100124529 Method of manufacturing carbon cylindrical structures and biopolymer detection device |
| 05/20/2010 | US20100123098 Ultratough single crystal boron-doped diamond |
| 05/19/2010 | CN101220516B Low-temperature method for manufacturing nano-MgO crystal whisker |
| 05/18/2010 | US7718469 Alternative methods for fabrication of substrates and heterostructures made of silicon compounds and alloys |
| 05/18/2010 | US7718001 Method for fabricating semiconductor epitaxial layers using metal islands |
| 05/18/2010 | US7718000 Method and article of manufacture corresponding to a composite comprised of ultra nonacrystalline diamond, metal, and other nanocarbons useful for thermoelectric and other applications |
| 05/14/2010 | WO2009045445A9 Low pressure method annealing diamonds |
| 05/13/2010 | US20100116197 Optical quality diamond material |
| 05/12/2010 | EP1658394B1 Method to manufacture indium nitride quantum dots and product containing these dots |
| 05/11/2010 | US7713507 Tough diamonds and method of making thereof |
| 05/11/2010 | US7713353 β-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method |
| 05/11/2010 | US7713346 Vapor deposition using amine containing organosilicon compound; integrated circuits; disilane derivative compound that is fully substituted with alkylamino and/or dialkylamino functional groups |
| 05/06/2010 | WO2009152503A3 Methods for epitaxial growth of low defect materials |
| 05/06/2010 | US20100111812 Single crystalline diamond and producing method thereof |
| 05/06/2010 | US20100111808 Group-iii nitride monocrystal with improved crystal quality grown on an etched-back seed crystal and method of producing the same |
| 05/06/2010 | DE10253161B4 Verfahren zur Herstellung von optoelektronischen Halbleiterchips mit verbesserten Oberflächeneigenschaften A process for the manufacture of optoelectronic semiconductor chip with improved surface properties |
| 05/06/2010 | DE102008043447A1 Single crystalline gold or palladium nanowire useful in electrical-, optical- or magnetic device or sensors, comprises a vertical or horizontal orientation to a surface of a single crystalline semi-conductive- or non-conductive substrate |
| 05/05/2010 | CN1942604B Inlet system for an MOCVD reactor |
| 05/05/2010 | CN1630030B Plasma processing device and semiconductor manufacturing device |
| 05/05/2010 | CN1582520B Method for fabricating semiconductor light emitting element |
| 05/04/2010 | USRE41310 Methods for growing semiconductors and devices thereof the alloy semiconductor gainnas |
| 05/04/2010 | US7709826 Rare earth-oxides, rare earth-nitrides, rare earth-phosphies, and ternary alloys with silicon |
| 05/04/2010 | US7709385 Method for depositing tungsten-containing layers by vapor deposition techniques |
| 05/04/2010 | US7708832 Method for preparing substrate for growing gallium nitride and method for preparing gallium nitride substrate |
| 04/29/2010 | US20100105159 Nitride semiconductor single crystal substrate, and methods of fabricating the same and a vertical nitride semiconductor light emitting diode using the same |
| 04/29/2010 | US20100102330 Nitride semiconductor device having oxygen-doped n-type gallium nitride freestanding single crystal substrate |
| 04/28/2010 | CN201442988U Plasma-assistant chemical vapor deposition device |
| 04/28/2010 | CN1957116B Nanocrystal diamond film, process for producing the same and apparatus using nanocrystal diamond film |
| 04/28/2010 | CN1662448B Process for manufacturing a gallium rich gallium nitride film |
| 04/28/2010 | CN1590583B Trimethyl indium filling container and filling method thereof |
| 04/28/2010 | CN101698962A Method for accurately controlling growth and characterization of components of quaternary semiconductor direct bandgap material |
| 04/22/2010 | WO2010043716A2 Method for the controlled growth of a graphene film |
| 04/22/2010 | US20100096727 Semi-conductor substrate and method of masking layer for producing a free-standing semi-conductor substrate by means of hydride-gas phase epitaxy |
| 04/21/2010 | EP2176878A1 Planar nonpolar m-plane group iii-nitride films grown on miscut substrates |
| 04/21/2010 | CN1839217B Methods of depositing materials over substrates, and methods of forming layers over substrates |
| 04/21/2010 | CN101696515A Method for homogeneous endotaxy repair and homogeneous epitaxial growth of diamond single crystal |
| 04/21/2010 | CN101086963B Method of growing gallium nitride crystal |
| 04/20/2010 | USRE41249 Quartz glass body having improved resistance against plasma corrosion, and method for production thereof |
| 04/20/2010 | US7699934 Epitaxial wafer production apparatus and susceptor structure |
| 04/15/2010 | WO2010042454A1 Epitaxial reactor for silicon deposition |
| 04/15/2010 | US20100093170 Method for forming tungsten materials during vapor deposition processes |
| 04/15/2010 | US20100093158 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices |
| 04/15/2010 | US20100093124 Method of producing a group iii nitride crystal |
| 04/15/2010 | US20100089314 Substrate support system for reduced autodoping and backside deposition |
| 04/15/2010 | US20100089311 Seed crystal consisting of silicon carbide single crystal and method for producing ingot using the same |
| 04/15/2010 | DE102006010273B4 Verfahren zur Herstellung einer verspannten Schicht auf einem spannungskompensierten Schichtstapel mit geringer Defektdichte, Schichtstapel und dessen Verwendung A process for producing a strained layer on a voltage compensated layer stack having a low defect density, layer stack and the use thereof |
| 04/14/2010 | EP2175054A2 Substrate for growing wurtzite type crystal and method for manufacturing the same and semiconductor device |
| 04/14/2010 | EP2175053A2 Branched nanowire and method for fabrication of the same |
| 04/14/2010 | EP2174357A1 Method of producing large area sic substrates |
| 04/14/2010 | CN1771356B CVD diamond in wear applications |
| 04/13/2010 | US7696073 Method of co-doping group 14 (4B) elements to produce ZnTe system compound semiconductor single crystal |
| 04/13/2010 | US7695564 Thermal management substrate |
| 04/13/2010 | US7695563 Pulsed deposition process for tungsten nucleation |
| 04/08/2010 | US20100084634 Nano-crystal diamond film, manufacturing method thereof, and device using nano-crystal diamond film |
| 04/08/2010 | US20100083897 Seed crystal consisting of silicon carbide single crysatal and method for producing ingot using the same |
| 04/08/2010 | DE102008048498A1 Verfahren zum Herstellen eines Halbleiterbauelementes, insbesondere einer Solarzelle, auf Basis einer Siliziumdünnschicht A method of manufacturing a semiconductor device, in particular a solar cell, based on a silicon thin film |
| 04/07/2010 | CN1853002B Precursor delivery system |
| 04/07/2010 | CN1681976B 单晶金刚石 Single crystal diamond |
| 04/06/2010 | US7691202 Ultraviolet light-emitting device in which p-type semiconductor is used |
| 04/01/2010 | US20100080256 HIGH PERFORMANCE ZnO-BASED LASER DIODES |
| 03/31/2010 | EP2168917A1 Microspheres of silicon and photonic sponges, method for production and uses thereof in the manufacture of photonic devices |
| 03/31/2010 | CN101688307A Device for coating substrates disposed on a susceptor |
| 03/31/2010 | CN101688298A Method and device for preparing a multilayered coating on a substrate |
| 03/31/2010 | CN101685791A Substrate supporting device and method for discharging static electricity by using same |