Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
10/2010
10/27/2010EP2243867A1 Method for growing gallium nitride crystal and method for producing gallium nitride substrate
10/27/2010EP2243866A1 Process for producing laminate comprising al-based group iii nitride single crystal layer, laminate produced by the process, process for producing al-based group iii nitride single crystal substrate using the laminate, and aluminum nitride single crystal substrate
10/27/2010EP2045373B1 Epitaxial reactor for the large-scale production of wafers
10/27/2010CN101871098A Growing method of high-crystal quality high-resistance GaN epitaxial layer
10/26/2010USRE41890 Methods for growing semiconductors and devices thereof from the alloy semiconductor GaInNAs
10/26/2010US7820246 Method for growing thin nitride film onto substrate and thin nitride film device
10/26/2010US7819974 Growth of textured gallium nitride thin films and nanowires on polycrystalline substrates
10/21/2010WO2010119833A1 Method for producing silicon epitaxial wafer
10/21/2010WO2010119792A1 Substrate, substrate provided with thin film, semiconductor device, and method for manufacturing semiconductor device
10/21/2010WO2010119430A1 Reaction chamber of an epitaxial reactor and reactor that uses said chamber
10/21/2010WO2010118640A1 Method and apparatus for preparing thin films using continuous liquid phase epitaxy
10/21/2010US20100263588 Methods and apparatus for epitaxial growth of semiconductor materials
10/21/2010US20100263587 High throughput multi-wafer epitaxial reactor
10/21/2010DE102010003286A1 Verbindungshalbleitersubstrat Compound semiconductor substrate
10/21/2010CA2747776A1 Substrate, substrate with thin film, semiconductor device, and method of manufacturing semiconductor device
10/19/2010US7816764 Method of controlling stress in gallium nitride films deposited on substrates
10/19/2010US7815735 Body having a smooth diamond layer, device and method therefor
10/19/2010US7815734 Thin film transistor and method of fabricating the same
10/19/2010CA2417992C Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
10/14/2010WO2010116596A1 Method for manufacturing free-standing iii nitride semiconductor substrate, and substrate for growing iii nitride semiconductor layer
10/14/2010US20100258049 Hvpe chamber hardware
10/13/2010CN1805121B Process for producing semiconductor wafer with an epitaxially deposited layer
10/13/2010CN101223630B Structure formed in diamond
10/13/2010CN101217110B Group III nitride semiconductor substrate and its manufacturing method
10/07/2010DE102010012430A1 Beschichtungsvorrichtung und Beschichtungsverfahren A coating apparatus and coating process
10/06/2010EP2235238A1 Method for producing group iii nitride-based compound semiconductor, wafer including group iii nitride-based compound semiconductor, and group iii nitride-based compound semiconductor device
10/06/2010EP2234941A1 Low thermal conductivity low density pyrolytic boron nitride material, method of making, and articles made therefrom
10/06/2010CN101851781A Method for preparing AlN mono-crystal nanobelts and nano-branch structure
10/06/2010CN101207174B 氮化物半导体衬底及其制造方法 The nitride semiconductor substrate and manufacturing method thereof
10/05/2010US7807494 Method for producing a chalcogenide-semiconductor layer of the ABC2 type with optical process monitoring
10/05/2010US7807126 provides a large-area, high-quality diamond single crystal substrate that is used in semiconductor materials, electronic components, optical components; single crystal is grown from a diamond single crystal serving as a seed substrate by vapor phase synthesis
09/2010
09/30/2010US20100248455 Manufacturing method of group III nitride semiconductor
09/30/2010US20100247930 Epitaxial Layers on Oxidation-Sensitive Substrates and Method of Producing Same
09/30/2010US20100247884 Stacked body of isotope diamond
09/30/2010US20100243990 Nanosensors
09/30/2010US20100242834 Method for producing single crystalline diamonds
09/29/2010EP2234142A1 Nitride semiconductor substrate
09/29/2010EP2233603A1 Method and apparatus
09/29/2010EP2231896A2 Separate injection of reactive species in selective formation of films
09/29/2010CN1914126B Method of incorporating a mark in CVD diamond
09/29/2010CN101849042A Apparatus for delivering precursor gases to an epitaxial growth substrate
09/29/2010CN101845670A Technique for the growth of planar semi-polar gallium nitride
09/28/2010US7803717 Growth and integration of epitaxial gallium nitride films with silicon-based devices
09/28/2010CA2655579C Method and device for fabricating semiconductor light emitting elements
09/23/2010WO2010105947A1 Mocvd reactor having a ceiling panel coupled locally differently to a heat dissipation member
09/23/2010US20100236483 Chemical vapor deposition reactor having multiple inlets
09/22/2010EP2230334A1 MULTILAYER SUBSTRATE INCLUDING GaN LAYER, METHOD FOR MANUFACTURING THE MULTILAYER SUBSTRATE INCLUDING GAN LAYER, AND DEVICE
09/22/2010EP1470592B1 Boron phosphide based semiconductor device
09/22/2010CN101838848A Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer
09/22/2010CN101838845A Growing and preparing method of cubic phase oxygen zinc magnesium single crystal film
09/22/2010CN101838844A Diamond medical devices
09/21/2010US7799427 CVD diamond in wear applications
09/21/2010US7799135 Reactor surface passivation through chemical deactivation
09/21/2010US7799132 Patterned atomic layer epitaxy
09/16/2010US20100233870 Method of fabricating group III nitride semiconductor single crystal, and method of fabricating group III nitride semiconductor single crystal substrate
09/16/2010US20100233433 Method for Growing AlxGa1-xN Crystal, and AlxGa1-xN Crystal Substrate
09/16/2010US20100233426 Noble metal single crystalline nanowire and the fabrication method thereof
09/16/2010US20100229789 Beta-Ga2O3 single crystal growing method, thin-film single crystal growing method, Ga2O3 light-emitting device, and its manufacturing method
09/16/2010US20100229788 Three-dimensional gan epitaxial structure and manufacturing method thereof
09/16/2010DE102009011622A1 Epitaxierte Siliciumscheibe und Verfahren zur Herstellung einer epitaxierten Siliciumscheibe Epitaxially coated silicon wafer and a method for producing epitaxially coated silicon wafer
09/15/2010EP2227576A1 Apparatus for delivering precursor gases to an epitaxial growth substrate
09/15/2010CN101835521A Methods and apparatus for smart abatement using an improved fuel circuit
09/15/2010CN101831694A Method for depositing group III/V compounds
09/15/2010CN101831693A Method for growing zinc oxide film material
09/15/2010CN101281863B Method for preparing large scale nonpolar surface GaN self-supporting substrate
09/14/2010US7795707 High voltage switching devices and process for forming same
09/14/2010US7794543 Method of growing GaN crystal, method of producing single crystal GaN substrate, and single crystal GaN substrate
09/14/2010US7794542 Bulk single crystal gallium nitride and method of making same
09/14/2010US7794540 Method of manufacturing a semiconductor device
09/10/2010WO2010101715A1 Gas injectors for cvd systems with the same
09/09/2010DE102009001379A1 Fabricating compound semiconductor epitaxial wafer comprises depositing silicon thin film on metal substrate, depositing compound semiconductor thin film on silicon buffer layer, and crystallizing compound semiconductor thin film
09/08/2010EP2226413A1 Process for producing diamond single crystal with thin film and diamond single crystal with thin film
09/08/2010CN101827959A Low pressure method annealing diamonds
09/08/2010CN101824647A Automatic process control method of PECVD film deposition
09/08/2010CN101350326B Method for monitoring base mounting centralization of germanium silicon epitaxial reaction cavity
09/08/2010CN101191250B Method for detecting normal growth of epitaxy single-crystal
09/07/2010US7790636 Simultaneous irradiation of a substrate by multiple radiation sources
09/07/2010US7790556 Integration of high k gate dielectric
09/02/2010WO2010068419A3 Production of single crystal cvd diamond rapid growth rate
09/02/2010WO2010052704A3 Tubular nanostructures, processes of preparing same and devices made therefrom
09/02/2010US20100221914 Composition and method for low temperature deposition of silicon-containing films
09/02/2010US20100221539 AlN Crystal and Method for Growing the Same, and AlN Crystal Substrate
09/02/2010DE102009010556A1 Verfahren zur Herstellung von epitaxierten Siliciumscheiben Process for producing epitaxially coated silicon wafers
09/02/2010DE102009010555A1 Verfahren zum Erkennen einer Fehllage einer Halbleiterscheibe während einer thermischen Behandlung A method for detecting an incorrect position of a semiconductor wafer during a thermal treatment
09/01/2010EP2222901A1 Epitaxial barrel susceptor having improved thickness uniformity
09/01/2010CN101071794B III-V crystal and production method
08/2010
08/31/2010US7786320 semiconductors; low dielectric thin films; chemical vapor deposition
08/31/2010US7785414 Process for manufacturing wafer of silicon carbide single crystal
08/26/2010US20100216277 Formation of Devices by Epitaxial Layer Overgrowth
08/26/2010US20100215987 Aluminum nitride single crystal film, aluminum nitride single crystal multi-layer substrate and manufacturing processes thereof
08/26/2010US20100212581 Silicon film formation apparatus and method for using same
08/25/2010CN101814428A Method for producing epitaxially coated silicon wafers
08/25/2010CN101812730A Preparation method of ultralong monocrystal beta-SiC nanowire metal-free catalyst
08/25/2010CN101812725A Growth method of phase-change nucleation in epitaxy of gallium nitride
08/25/2010CN101812724A Silicon film formation apparatus and method for using same
08/25/2010CN101348936B Orientational alignment carbon nano-tube and carbon coating cobalt nano-particle complex and preparation thereof
08/25/2010CN101127380B ZnO nano structure vertical on silicon/insulation layer structure underlay and its making method
08/24/2010US7781356 Epitaxial growth of group III nitrides on silicon substrates via a reflective lattice-matched zirconium diboride buffer layer
08/24/2010US7781314 Nitride semiconductor device manufacturing method
08/19/2010WO2010093614A1 A portable dry nanocoating machine
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