| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 04/03/2013 | CN103014833A Preparation method of silicon ingot |
| 04/03/2013 | CN103014832A Strontium-doped hydroxyapatite crystal whisker and preparation method thereof |
| 04/03/2013 | CN103014831A Production method of ultrapure calcium sulfate whiskers |
| 04/03/2013 | CN103014830A Method for growing scintillation crystal bismuth silicate through hydro-thermal method |
| 04/03/2013 | CN103014829A Method of preparing anatase TiO2 mono-crystalline containing {001} / {010} / {101} crystal face |
| 04/03/2013 | CN103014828A Preparation method of nanometer silicon carbide whiskers |
| 04/03/2013 | CN103014625A Method for preparing tetragonal-phase room-temperature multi-ferroic material BiFeO3 |
| 04/03/2013 | CN103014382A Method for preparing nano cobalt-nickel alloy by reduction under magnetic-field-assisted gamma-ray radiation |
| 04/03/2013 | CN103012495A D-tartaric acid 2,2-dipyridylamine cobalt ferroelectric function material and preparation method |
| 04/03/2013 | CN103008678A Tetrahydrofuran-induced gold nanorod controllable assembly and preparation method thereof |
| 04/03/2013 | CN103008652A Method for preparing magnesium oxide whisker/ magnesium composite powder by in-situ growth on surface of magnesium powder |
| 04/03/2013 | CN102382979B Technique for extracting rare earth from rare earth tailing and preparing calcium sulfate whiskers |
| 04/03/2013 | CN102373506B Method for epitaxially growing graphene on SiC substrate, graphene and graphene device |
| 04/03/2013 | CN102286721B Method for preparing cadmium telluride nanowire array by using magnetron sputtering method |
| 04/03/2013 | CN102220644B Method for improving performance of cadmium zinc telluride crystal |
| 04/03/2013 | CN101906657B System for manufacturing single crystal ingot |
| 04/03/2013 | CN101857971B Bismuth/bismuth-antimony extensional superlattice nanowire and preparation method thereof |
| 04/03/2013 | CN101838848B Epitaxially coated silicon wafer and method for producing an epitaxially coated silicon wafer |
| 04/02/2013 | US8409940 Silicon crystallization apparatus and silicon crystallization method thereof |
| 04/02/2013 | CA2745474C Iridescent solid nanocrystalline cellulose films incorporating patterns and method for their production |
| 03/28/2013 | WO2013044230A1 Highly reflective crystalline colloidal arrays |
| 03/28/2013 | WO2013043081A1 Method of growing single crystals of gallium nitride |
| 03/28/2013 | WO2013042504A1 Substrate having buffer layer structure for growing nitride semiconductor layer |
| 03/28/2013 | WO2013041661A1 Loading silicon in a crucible |
| 03/28/2013 | WO2013003313A3 Structures including porous germanium, methods of making, and methods of use thereof |
| 03/28/2013 | WO2012165898A3 Apparatus and method for manufacturing ingot |
| 03/28/2013 | DE112011102068T5 Dreieckförmig oder rautenförmig geformte gallium- und stickstoffhaltige anordnung für optische bauelemente Triangle-shaped or diamond-shaped molded gallium and nitrogen-containing arrangement for optical devices |
| 03/28/2013 | DE112011101813T5 Glättungsverfahren für Halbleitermaterial und von daraus hergestellten Wafern Smoothing method for semiconductor materials and wafers produced therefrom |
| 03/28/2013 | DE112011100596T5 Verfahren zur herstellung eines siliciumcarbid-einkristalls A method for producing a silicon carbide single crystal |
| 03/27/2013 | WO2014046723A1 Highly reflective crystalline colloidal arrays with radiation absorbing particles |
| 03/27/2013 | EP2573206A1 Method for growing a group (iii) metal nitride film |
| 03/27/2013 | EP2571895A1 Methods of crystallising perforin |
| 03/27/2013 | CN202839276U Ingot furnace transformer |
| 03/27/2013 | CN202830230U Thermal field balancing device of sapphire crystal growing furnace |
| 03/27/2013 | CN202830229U Polycrystal ingot furnace mass flow controller filter |
| 03/27/2013 | CN202830228U Solid liquid interface measuring device used for silicon ingot furnace |
| 03/27/2013 | CN202830226U Large size quartz ceramic crucible |
| 03/27/2013 | CN202830225U Fixing device of crucible of sapphire crystal growing furnace |
| 03/27/2013 | CN202830224U Heating device of sapphire crystal growing furnace |
| 03/27/2013 | CN202830223U Seed crystal producing device of sapphire crystal growing furnace |
| 03/27/2013 | CN202830216U Device capable of preparing high-use-ratio pseudo-single crystal |
| 03/27/2013 | CN103003937A Silicon carbide substrate, semiconductor device, and SOI wafer |
| 03/27/2013 | CN103003200A Polycrystalline silicon ingot manufacturing apparatus, polycrystalline silicon ingot manufacturing method, and polycrystalline silicon ingot |
| 03/27/2013 | CN103003195A Method of manufacturing carbon nanotube, monocrystal substrate for manufacturing carbon nanotube, and carbon nanotube |
| 03/27/2013 | CN102995124A Seed crystal for aluminium nitride (ALN) crystal growth |
| 03/27/2013 | CN102995123A Manufacturing method of group 13 nitride crystal |
| 03/27/2013 | CN102995122A Scintillation crystal material Ce-doped potassium lutetium tungstate |
| 03/27/2013 | CN102995121A Nonlinear optical crystal vanadium thallium iodate |
| 03/27/2013 | CN102995120A Nanometer TiO2 monocrystalline material, preparation method and application thereof |
| 03/27/2013 | CN102995119A Large-dimension hexagonal bi-layer grapheme single-crystal domain and preparation method thereof |
| 03/27/2013 | CN102995118A Method for preparing D type optical fiber colloidal crystal micro-nano structure |
| 03/27/2013 | CN102995117A Preparation method of topological insulator structure |
| 03/27/2013 | CN102995116A Aluminum nitride crystal preparation furnace and thermal-insulation device thereof |
| 03/27/2013 | CN102995114A Crucible cover of big-size sapphire single crystal growth furnace |
| 03/27/2013 | CN102995111A Method and device for measuring silicon material liquid level position in single crystal furnace in non-contact manner |
| 03/27/2013 | CN102995108A Continuous charging silicon single crystal furnace |
| 03/27/2013 | CN102995107A Technical method for rapidly growing doped Bi4Ge3O13(BGO) crystal |
| 03/27/2013 | CN102995104A Method and device for casting polycrystalline silicon or mono-like silicon |
| 03/27/2013 | CN102995103A Crucible used for preparing quasi-monocrystalline silicon ingot, and quasi-monocrystalline silicon ingot growth method |
| 03/27/2013 | CN102995102A Method for recycling floating beads and preparing different morphologies of calcium sulfate hemihydrate mono-crystals by using desulfurized gypsum |
| 03/27/2013 | CN102520749B Power source for Kyropoulos method crystal growth equipment |
| 03/27/2013 | CN102328095B Preparation method of metal silver nanowires with adjustable length and diameter |
| 03/27/2013 | CN102234841B Electrooptic crystal material and application thereof |
| 03/27/2013 | CN102220643B Wet method for passivating surface of germanium monocrystal |
| 03/27/2013 | CN102220640B Preparation method of gallium nitride single crystal |
| 03/27/2013 | CN102154694B Preparation method of hydrogen and oxygen co-doped graphene |
| 03/27/2013 | CN102080256B Quartz crucible |
| 03/27/2013 | CN102057084B Seed crystal for growth of silicon carbide single crystal, process for producing the same, and silicone carbide single crystal and process for producing the same |
| 03/27/2013 | CN102056592B Stable crystal modifications of DOPC |
| 03/27/2013 | CN101952489B Device and method for preparing crystalline bodies by directional solidification |
| 03/27/2013 | CN101790592B Low rhenium nickel base superalloy compositions and superalloy articles |
| 03/27/2013 | CN101688322B Wafer/ribbon crystal method and apparatus |
| 03/27/2013 | CN101595565B Method of producing precision vertical and horizontal layers in a vertical semiconductor structure |
| 03/27/2013 | CN101451265B Gaas single crystal substrate and epitaxial wafer using the same |
| 03/27/2013 | CN101445959B Method for manufacturing polycrystalline silicon |
| 03/27/2013 | CN101443488B Process for producing a III-N bulk crystal and a free-standing III-N substrate, and III-N bulk crystal and free-standing III-N substrate |
| 03/27/2013 | CN101377008B 硅单晶提拉方法 Silicon single crystal pulling method |
| 03/27/2013 | CN101356119B Process for producing superconducting oxide material |
| 03/27/2013 | CA2853210A1 Highly reflective crystalline colloidal arrays with radiation absorbing particles |
| 03/26/2013 | US8404571 Film deposition method |
| 03/21/2013 | WO2013040410A1 Directional solidification system and method |
| 03/21/2013 | WO2013040372A1 Multi-crystalline silicon ingot and directional solidification furnace |
| 03/21/2013 | WO2013040327A1 Directional solidification furnace with laterally movable insulation system |
| 03/21/2013 | WO2013040246A1 Directional solidification furnace having movable insulation system |
| 03/21/2013 | WO2013040219A1 Directional solidification furnace having movable heat exchangers |
| 03/21/2013 | WO2013039180A1 Colored film using metal nano-particles, and coloring method |
| 03/21/2013 | WO2013038980A1 Substrate having buffer layer structure for growing nitride semiconductor layer |
| 03/21/2013 | WO2012161524A3 Apparatus for fabricating ingot |
| 03/21/2013 | WO2012157970A3 Apparatus for attaching seed |
| 03/21/2013 | WO2012154551A3 Growth of a uniformly doped silicon ingot by doping only the initial charge |
| 03/21/2013 | WO2012151155A3 Apparatus and method for producing a multicrystalline material having large grain sizes |
| 03/21/2013 | WO2012144872A3 Apparatus and method for fabricating ingot |
| 03/21/2013 | WO2012144851A3 Apparatus for fabricating ingot |
| 03/21/2013 | DE102006027841B4 Verfahren zur Herstellung eines III-Nitrid-Halbleiter-Bauteils A process for producing a III-nitride semiconductor device |
| 03/20/2013 | EP2570523A1 Method for producing gallium trichloride gas and method for producing nitride semiconductor crystal |
| 03/20/2013 | EP2570522A1 Epitaxial silicon carbide single-crystal substrate and method for producing the same |
| 03/20/2013 | EP2570521A2 Manufacturing method of group 13 nitride crystal |
| 03/20/2013 | EP2569465A1 3d nanocrystals and manufacturing methods |
| 03/20/2013 | CN202809009U Crystal growing device |
| 03/20/2013 | CN202809007U Heating device for crystal growing furnace and corundum single crystal growing furnace |