| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/20/2013 | CN202809004U Equipment for producing large alpha-Al2O3 single crystal |
| 03/20/2013 | CN202809003U Thermal field of ingot casting furnace for silicon ingot production |
| 03/20/2013 | CN202809002U Heater in ingot furnace and ingot furnace |
| 03/20/2013 | CN202809001U Square quartz crucible |
| 03/20/2013 | CN202809000U Automatic switching device for cameras of single crystal furnace |
| 03/20/2013 | CN202808997U Intermediate insulation barrel for Czochralski crystal furnace thermal field system |
| 03/20/2013 | CN202808996U Lower insulation barrel for Czochralski crystal furnace thermal field system |
| 03/20/2013 | CN202808991U Zone-melting thermal field |
| 03/20/2013 | CN202808986U Radiating plate |
| 03/20/2013 | CN102985601A Smoothing method for semiconductor material and wafers produced by same |
| 03/20/2013 | CN102985363A System and method for polycrystalline silicon deposition |
| 03/20/2013 | CN102978711A Method for removing oxide film on edge of silicon wafer by using low-temperature HF etching solution |
| 03/20/2013 | CN102978709A Efficient cooling technical method of polycrystal ingot casting |
| 03/20/2013 | CN102978706A Preparation method of SiC whiskers |
| 03/20/2013 | CN102978705A Thulium and holmium co-doped gadolinium lithium molybdate laser crystal, and preparation method and application thereof |
| 03/20/2013 | CN102978704A Novel sapphire crystal growth furnace crucible charging system |
| 03/20/2013 | CN102978703A Novel seed crystal mechanism for sapphire crystal growing furnace |
| 03/20/2013 | CN102978702A Compound barium borofluoride, barium borofluoride non-linear optical crystal, and preparation method and use of the barium borofluoride non-linear optical crystal |
| 03/20/2013 | CN102978701A Er<3+>/Yb<3+> co-doped yttrium lithium fluoride monocrystal and preparation method thereof |
| 03/20/2013 | CN102978700A Er<3+>/Pr<3+> co-doped yttrium lithium fluoride monocrystal and preparation method thereof |
| 03/20/2013 | CN102978699A Growth of boron and gallium co-doped heavy doped p-type monocrystalline silicon and doping method thereof |
| 03/20/2013 | CN102978698A Growing and doping method for heavy doped P-type monocrystalline silicon with boron and gallium codoped |
| 03/20/2013 | CN102978697A Movable curtain door device for crystalline silicon ingot furnace and control method of device |
| 03/20/2013 | CN102978696A Protective device for polysilicon ingot casting crucible |
| 03/20/2013 | CN102978695A Concealed-structure substrate for epitaxial growth of semiconductor device |
| 03/20/2013 | CN102978694A Improved kyropoulos method for sapphire crystal growth |
| 03/20/2013 | CN102978692A Rotating and pulling structure for large-size sapphire single crystal growth furnace |
| 03/20/2013 | CN102978691A Novel heating system of sapphire crystal growing furnace |
| 03/20/2013 | CN102978690A Novel sapphire crystal growth furnace body cooling system |
| 03/20/2013 | CN102978689A Novel man-machine interface design for sapphire crystal growing furnace |
| 03/20/2013 | CN102978687A Crystal growth method of polycrystalline silicon ingot |
| 03/20/2013 | CN102978686A Novel composite heat screen system for sapphire crystal growing furnace |
| 03/20/2013 | CN102978685A Novel crucible cover of sapphire crystal growing furnace |
| 03/20/2013 | CN102978684A Novel heat screen system for sapphire crystal growing furnace |
| 03/20/2013 | CN102978572A Method for preparing CdTe film and thermal evaporation device |
| 03/20/2013 | CN102976369A Method for preparing ultrafine magnesium hydroxide and basic magnesium sulfate whiskers from low-grade magnesite |
| 03/20/2013 | CN102976287A BaGa2GeSe6 compound, BaGa2GeSe6 non-linear optical crystal and their preparation methods and use |
| 03/20/2013 | CN102230226B Method for preparing calcium sulfate crystal whiskers |
| 03/20/2013 | CN102220636B Combined type crucible |
| 03/20/2013 | CN102162130B Preparation method of sapphire monocrystalline |
| 03/20/2013 | CN102127813B High-efficiency mid-infrared laser crystal Pr, Er:YSGG and preparation method thereof |
| 03/20/2013 | CN102104060B Semiconductor structure and forming method thereof |
| 03/20/2013 | CN102011185B Method for artificially synthesizing sapphire |
| 03/20/2013 | CN102002756B Method of preparing calcium sulfate whisker by using sinter fume desulfurized by-products |
| 03/20/2013 | CN101914805B Directional solidification furnace with improved crucible cover part |
| 03/20/2013 | CN101653735B Catalyst particles on tip |
| 03/20/2013 | CN101649488B Synthesizing method for growing terbium gallium garnet crystal by pulling method |
| 03/20/2013 | CN101649486B Device and method for growing terbium gallium garnet (TGG) crystal by pulling method |
| 03/20/2013 | CN101588010B Molybdate laser crystal doped with erbium ions, ytterbium ions and cerium ions and application thereof |
| 03/20/2013 | CN101533801B Optical device manufacturing method |
| 03/20/2013 | CN101358130B Europium-doped lanthanum molybdate nano luminous material with tetragonal bipyramid uniform morphology and preparing method thereof |
| 03/19/2013 | US8398767 Bulk mono-crystalline gallium-containing nitride and its application |
| 03/14/2013 | WO2013035691A1 Sic epitaxial wafer and method for manufacturing same |
| 03/14/2013 | WO2013035472A1 Substrate for epitaxial growth, and crystal laminate structure |
| 03/14/2013 | WO2013035464A1 Crystal laminate structure and method for producing same |
| 03/14/2013 | WO2013035373A1 Saw wire, and method for producing iii-nitride crystal substrate using same |
| 03/14/2013 | WO2013035360A1 Method for forming magnesium oxide thin film and processed plate |
| 03/14/2013 | WO2013035356A1 Crystal production method |
| 03/14/2013 | WO2013034819A1 Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance |
| 03/14/2013 | WO2013002539A3 Apparatus and method for growing silicon carbide single crystal |
| 03/14/2013 | US20130065036 Group 13 nitride crystal substrate, manufacturing method of group 13 nitride crystal, and gallium nitride crystal |
| 03/14/2013 | DE102007009281B4 Verfahren zum Erzeugen von Materialausscheidungen und Halbleitermaterialscheibe sowie Halbleiterbauelemente A method of generating exudates material and semiconductor material wafer, and semiconductor devices |
| 03/14/2013 | CA2846262A1 Device for manufacturing a crystalline material from a crucible having non-uniform heat resistance |
| 03/13/2013 | EP2567939A2 Method of determining an amount of impurities that a contaminating material contributes to high purity silicon and furnace for treating high purity silicon |
| 03/13/2013 | EP2567012A1 Methods for improving the bioactivity characteristics of a surface and objects with surfaces improved thereby |
| 03/13/2013 | EP2567004A1 Substrate for epitaxial growth |
| 03/13/2013 | EP2567003A1 Removing a sheet from the surface of a melt using gas jets |
| 03/13/2013 | EP2567002A1 Gas-lift pumps for flowing and purifying molten silicon |
| 03/13/2013 | EP2567001A1 Removing a sheet from the surface of a melt using elasticity and buoyancy |
| 03/13/2013 | EP2566996A1 Carbon tape intended to receive a layer of a semiconductor material |
| 03/13/2013 | EP2453042B1 Method for the determination of impurities in silicon |
| 03/13/2013 | CN202791123U Explosion-proof equipment for vacuum system in sapphire equipment |
| 03/13/2013 | CN202786523U Needle-punched heat-preserving container preform and unit layer thereof |
| 03/13/2013 | CN202786515U Water supply system for growth furnaces |
| 03/13/2013 | CN202786514U Rotary weighing mechanism for seed crystals in sapphire furnace |
| 03/13/2013 | CN202786513U Device for connecting two different materials in sapphirine equipment |
| 03/13/2013 | CN202786512U Cooling device for vacuum system in sapphirine single crystal furnace equipment |
| 03/13/2013 | CN202786511U Flexible connection device for vacuum systems in sapphirine equipment |
| 03/13/2013 | CN202786510U Withdrawing device for silicon single crystal rods |
| 03/13/2013 | CN202786509U Monocrystal silicon rod |
| 03/13/2013 | CN202786508U High-purity silicon wafer |
| 03/13/2013 | CN202786507U Polycrystalline silicon ingot furnace and multilayer hot door thereof |
| 03/13/2013 | CN202786506U Crucible padding plate for efficient multicrystalline wafer production |
| 03/13/2013 | CN202786505U Type 450 ingot furnace |
| 03/13/2013 | CN202786504U Air seal structure of polycrystalline ingot casting furnace |
| 03/13/2013 | CN202786503U Gas path distribution device of poly-crystal ingot furnace |
| 03/13/2013 | CN202786502U Combined cover plate for polycrystalline ingot casting furnace |
| 03/13/2013 | CN202786501U Device for controlling shape of growth interface of crystal during ingot casting |
| 03/13/2013 | CN202786499U High temperature furnace suitable for growing titanium-doped sapphire crystal through kyropoulos method |
| 03/13/2013 | CN202786498U Multi-die crystal growing apparatus based on die guide method |
| 03/13/2013 | CN202786496U Composite heat shielding device applied to single crystal furnace |
| 03/13/2013 | CN202786495U Automatic lifting mechanism for auxiliary furnace cover of sapphire furnace |
| 03/13/2013 | CN202786493U Czochralski silicon furnace bottom exhaust device |
| 03/13/2013 | CN102965735A Synthesis method of bismuth sulfide nanorod arrays with length-diameter ratios regulated and controlled by solvent hydrothermal method |
| 03/13/2013 | CN102965734A Rapid synthesis method of indium phosphide polycrystalline material and multi-tubular quartz phosphorus bubble thereof |
| 03/13/2013 | CN102965733A Growth technique of graphite-coating-free conductive silicon carbide crystals |
| 03/13/2013 | CN102965732A Yttrium-doped lithium niobate crystal and preparation method thereof |
| 03/13/2013 | CN102965731A Method for solving annealing cracking of potassium niobate crystal |
| 03/13/2013 | CN102965730A Novel ytterbium-activating-gadolinium calcium borate ultrafast laser crystal |
| 03/13/2013 | CN102965729A C-plane sapphire method and apparatus |