| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 03/13/2013 | CN102965728A Method for preparing single-layer two-dimensional photonic crystals by using cant-assisted gravity settling method |
| 03/13/2013 | CN102965727A Polycrystalline silicon ingot and casting method thereof |
| 03/13/2013 | CN102965726A Insulation structure applied to sapphire single crystal growth by adopting kyropoulos method |
| 03/13/2013 | CN102965725A Upper insulating screen for sapphire growth kyropoulos furnace |
| 03/13/2013 | CN102965723A Method for inhibiting radial rapid growth of BBO (Barium Boron Oxide) crystal |
| 03/13/2013 | CN102965722A Microemulsion method for producing whisker calcium sulfate with by-product sodium sulfate solution |
| 03/13/2013 | CN102965721A Method for preparing calcium sulfate crystal whisker in low cost |
| 03/13/2013 | CN102963902A Method for preparing lamellar-form borate crystal material |
| 03/13/2013 | CN102628184B Method for growing gem crystals by way of vacuum induction heating and device realizing method |
| 03/13/2013 | CN102277622B Copper-platinum superlattice alloy nano-tube and preparation method thereof |
| 03/13/2013 | CN102260907B Preparation method of ZnO nano homogeneous p-n junction array |
| 03/13/2013 | CN102260905B Method for preparing Ge nanotubes |
| 03/13/2013 | CN102212880B Elementary substance Bi nano-structured material and preparation method and application thereof |
| 03/13/2013 | CN102181825B Seed layer-assisted high performance TiO2-based transparent conductive film and preparation method thereof |
| 03/13/2013 | CN102066624B Method for manufacturing the color controlled sappire |
| 03/13/2013 | CN102011193B Protein modified GaN nanowire array as well as preparation method and application thereof |
| 03/13/2013 | CN101910474B Single crystal producing device |
| 03/13/2013 | CN101768776B Silicon wafer and method for producing the same |
| 03/13/2013 | CN101705518B Bi-doped solonetz borate crystal and preparation method and application thereof |
| 03/13/2013 | CN101688324B Method and apparatus for growing a ribbon crystal with localized cooling |
| 03/13/2013 | CN101532174B Semiconductor wafer of single crystalline silicon and process for its manufacture |
| 03/13/2013 | CN101495682B Method and device for producing classified high-purity polycrystalline silicon fragments |
| 03/13/2013 | CN101341228B Single-source precursor for semiconductor nanocrystals |
| 03/12/2013 | US8394195 Rare-earth oxyorthosilicate scintillator crystals and method of making rare-earth oxyorthosilicate scintillator crystals |
| 03/07/2013 | WO2013032703A2 Purification of a metalloid by consumable electrode vacuum arc remelt process |
| 03/07/2013 | WO2013031907A1 Single crystal diamond and method for producing same |
| 03/07/2013 | WO2013031887A1 Optical substrate and semiconductor light-emitting element |
| 03/07/2013 | WO2013031856A1 Silicon carbide single crystal wafer and manufacturing method for same |
| 03/07/2013 | WO2013031154A1 Semiconductor wafer manufacturing method, and semiconductor wafer |
| 03/07/2013 | WO2013031091A1 Process for producing single-crystal silicon |
| 03/07/2013 | WO2013029959A1 Manufacturing a component of single crystal or directionally solidified material |
| 03/07/2013 | WO2013029451A1 Method for sintering alumina powder into alumina block material by using flame fusion for preparing sapphire crystal |
| 03/07/2013 | DE112011101587T5 Verfahren zum messen und steuern des abstands zwischen einer unteren endfläche eines wärmeabschirmelements und der oberfläche einer rohstoffschmelze und verfahren zum herstellen eines silizium-einkristalls To measure and control the distance- between a lower end surface of a wärmeabschirmelements and the surface of a molten raw material and procedural methods to produce a silicon single crystal |
| 03/06/2013 | EP2565928A1 Epitaxial substrate and method for producing epitaxial substrate |
| 03/06/2013 | EP2565907A1 Epitaxial substrate and method for producing epitaxial substrate |
| 03/06/2013 | EP2565906A1 Epitaxial substrate and process for producing epitaxial substrate |
| 03/06/2013 | EP2565301A1 Silicon carbide crystal and method for producing silicon carbide crystal |
| 03/06/2013 | EP2565294A1 Manufacturing a component of single crystal or directionally solidified material |
| 03/06/2013 | EP2563951A1 Nano-particles containing carbon and a ferromagnetic metal or alloy |
| 03/06/2013 | EP2563950A1 Method for controlled growth of silicon carbide and structures produced by same |
| 03/06/2013 | CN202766659U Device for producing ultra-pure polycrystalline silicon ingots by electromagnetic method |
| 03/06/2013 | CN202766658U Self-propagating high-temperature synthesizer of nanometer materials |
| 03/06/2013 | CN202766657U Cooling device for cooling polycrystalline silicon ingot furnace |
| 03/06/2013 | CN202766656U Seed rod lifting positioner |
| 03/06/2013 | CN202766655U Heat shield for Czochralski silicon single crystal furnace |
| 03/06/2013 | CN202766654U Device for removing quartz in monocrystalline silicon pot material |
| 03/06/2013 | CN202766653U Universal raw material clamp for electron beam suspension area smelting furnace |
| 03/06/2013 | CN202766652U Ingot furnace suitable for producing monocrystalline silicon ingots by ingot casting method |
| 03/06/2013 | CN102959141A Group iii nitride crystal growing method |
| 03/06/2013 | CN102959140A Epitaxial film formation method, vacuum treatment device, method for producing semiconductor light-emitting element, semiconductor light-emitting element, lighting device |
| 03/06/2013 | CN102959139A Garnet single crystal, optical isolator and laser processing machine |
| 03/06/2013 | CN102959138A Single crystal diamond material |
| 03/06/2013 | CN102959137A Gas-lift pumps for flowing and purifying molten silicon |
| 03/06/2013 | CN102958834A Silicon carbide powder and method for producing silicon carbide powder |
| 03/06/2013 | CN102953122A Novel observation window mechanism of sapphire crystal growth device |
| 03/06/2013 | CN102953121A Novel seed crystal chamber of sapphire crystal growth furnace |
| 03/06/2013 | CN102953120A Device for releasing pressure of single crystal growing furnace |
| 03/06/2013 | CN102953119A High-efficiency and energy-saving polysilicon preparation technology and apparatus |
| 03/06/2013 | CN102953118A Single crystal graphene pn node and preparation method thereof |
| 03/06/2013 | CN102953117A Method for casting silicon ingot |
| 03/06/2013 | CN102953116A Preparation method of centimeter-level pure-phase BiFeO3 monocrystal |
| 03/06/2013 | CN102953110A Preparation method of titanium dioxide core/shell nanometer cable array |
| 03/06/2013 | CN102212882B Non-linear optical crystal of rubidium lithium borate compound, preparation method thereof and application thereof |
| 03/06/2013 | CN102174709B Three-dimensional metallic nickel nano tapered body array structure and preparation method thereof |
| 03/06/2013 | CN102134732B Method for preparing nickel and nickel alloy one-dimensional superstructure nanometer functional materials by adopting hydrogen separation template method |
| 03/06/2013 | CN101932757B Method for growing p-type sic semiconductor single crystal and p-type sic semiconductor single crystal |
| 03/06/2013 | CN101849043B Single-crystal manufacturing apparatus and manufacturing method |
| 03/06/2013 | CN101619491B Frroelectric material boron potassium ermanate, preparation method and application thereof |
| 03/05/2013 | US8391327 Group III nitride semiconductor element and epitaxial wafer |
| 03/05/2013 | US8390101 High voltage switching devices and process for forming same |
| 02/28/2013 | WO2013028826A2 Barrier guided growth of microstructured and nanostructured graphene and graphite |
| 02/28/2013 | WO2013028821A1 Fine polycrystalline diamond compact with a grain growth inhibitor layer between diamond and substrate |
| 02/28/2013 | WO2013028494A1 Mold thermophysical properties for thickness uniformity optimization of exocast sheet |
| 02/28/2013 | WO2013027968A2 Apparatus for fabricating ingot, method for providing material, and method for fabricating ingot |
| 02/28/2013 | WO2013027299A1 Vacuum storage method and device for crystalline material |
| 02/28/2013 | WO2013027102A1 Deposition system having acces gates and related method |
| 02/28/2013 | WO2013027096A1 Direct liquid injection for halide vapor phase epitaxy systems and methods |
| 02/28/2013 | DE112011101708T5 Epitaktischer Siliziumwafer und Verfahren zur Herstellung desselben Epitaxial silicon wafer and method for manufacturing the same |
| 02/28/2013 | DE102012215135A1 Lichtemittierendes Bauelement aus einem Nitridhalbleiter und Verfahren zur Herstellung desselben Of a nitride semiconductor light emitting device and method of manufacturing the same |
| 02/28/2013 | DE102007027446B4 Halbleitersubstrat auf Gruppe-III-V-Nitrid-Basis und lichtemittierende Vorrichtung auf Gruppe-III-V-Nitrid-Basis Semiconductor substrate to the Group III-V nitride-based light emitting device and the group III-V nitride-based |
| 02/27/2013 | EP2562296A1 Garnet-type single crystal, optical isolator, and optical processor |
| 02/27/2013 | CN202755100U Water-cooling copper supporting disk for sapphire crystal growth furnace |
| 02/27/2013 | CN202755099U Solid liquid interface determination device for silicon ingot furnace |
| 02/27/2013 | CN202755098U Polycrystalline silicon ingot furnace multipoint measurement and control system |
| 02/27/2013 | CN202755097U Quartz ceramic crucible for polycrystalline silicon |
| 02/27/2013 | CN202755096U Heat insulation device for ingot furnace |
| 02/27/2013 | CN202755095U Novel single crystal furnace thermal field and novel single crystal furnace thermal field of drawing slight-mixing silicon single crystal bar |
| 02/27/2013 | CN102947493A Method for slicing a substrate wafer |
| 02/27/2013 | CN102947492A Gallium and nitrogen containing triangular or diamond-shaped configuration for optical devices |
| 02/27/2013 | CN102947445A Florigen-activating complex |
| 02/27/2013 | CN102947025A Production of monocrystalline semiconductor materials |
| 02/27/2013 | CN102946048A Raman laser based on crystalline in fresnoite structure |
| 02/27/2013 | CN102945903A Semiconductor device and method of fabricating the same |
| 02/27/2013 | CN102945868A Orthohexagonal crystal silicon solar wafer and solar battery manufactured thereby |
| 02/27/2013 | CN102943307A Single crystal silicon alcohol-free wool making additive |
| 02/27/2013 | CN102943306A Calcium carbonate whisker synthesizing and modified integrating method based on sol-gel method |
| 02/27/2013 | CN102943305A Cesium boric silicon compound and cesium boric silicon nonlinear optical crystal and preparation method and application of cesium boric silicon compound and cesium boric silicon nonlinear optical crystal |
| 02/27/2013 | CN102943304A Polysilicon ingot and manufacturing method of same |
| 02/27/2013 | CN102943303A Method to restrain bubbles in process of growing sapphire by using kyropoulos method |
| 02/27/2013 | CN102943302A Crystal clamping apparatus and zone melting single crystal furnace |