Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
01/2013
01/03/2013WO2013001014A1 Method for manufacturing a thick epitaxial layer of gallium nitride on a silicon or similar substrate and layer obtained using said method
01/03/2013US20130000552 Device and method for producing bulk single crystals
01/03/2013US20130000546 Method of vapor phase epitaxy and vapor phase epitaxy device
01/03/2013US20130000545 Device and method for producing bulk single crystals
01/03/2013DE102011078511A1 Device useful for filling crucible with polycrystalline silicon, comprises a tube for receiving polycrystalline silicon, comprising tube wall, lower end and upper end, a shutter for closing lower end of tube, and an aperture in tube wall
01/02/2013EP2540863A1 Cvd processing method and cvd device using said method
01/02/2013EP2539067A2 Carbon-based containment system
01/02/2013CN202643907U Sapphire substrate
01/02/2013CN102856451A Semiconductor epitaxial growth substrate
01/02/2013CN102851735A Silicon epitaxial growth method via chemical vapor deposition (CVD)
01/02/2013CN102851734A Semiconductor epitaxy structure and growth method thereof
01/02/2013CN102851733A Preparation system and preparation method for gallium nitride base material and device thereof
01/02/2013CN102181921B Method for preparing polarity controllable zinc oxide by adopting metal source chemical vapor deposition technology
01/02/2013CN101851781B Method for preparing AlN mono-crystal nanobelts and nano-branch structure
01/01/2013US8344417 Gallium nitride semiconductor structures with compositionally-graded transition layer
01/01/2013US8343276 High-temperature ionic state compound crystallization technology
01/01/2013US8342119 Self aligning non contact shadow ring process kit
12/2012
12/27/2012US20120329251 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors and fabricating such devices
12/27/2012US20120325139 Eptaxial substrate, method for making the same and method for growing epitaxial layer using the same
12/27/2012US20120325138 Film-forming apparatus and film-forming method
12/27/2012DE102006055038B4 Epitaxierte Halbleiterscheibe sowie Vorrichtung und Verfahren zur Herstellung einer epitaxierten Halbleiterscheibe Epitaxially coated semiconductor wafer, as well as apparatus and method for producing an epitaxially coated semiconductor wafer,
12/27/2012DE10124609B4 Verfahren zum Abscheiden aktiver Schichten auf Substraten A method for depositing active layers on substrates
12/26/2012EP2538435A1 Epitaxial substrate and method for producing same
12/26/2012CN102844474A Epitaxial silicon carbide single-crystal substrate and method for producing the same
12/26/2012CN102842661A Epitaxial growth method for gallium-nitride-based (GaN-based) light-emitting diode (LED)
12/26/2012CN102839417A Method for growing self-stripping GaN thin film on sapphire substrate
12/26/2012CN101350294B System and process for heating semiconductor wafers by optimizing absorption of electromagnetic energy
12/26/2012CN101319360B 单晶金刚石 Single crystal diamond
12/25/2012US8337798 Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate
12/22/2012CA2778082A1 Electrode and method for supplying current to a reactor
12/20/2012WO2012174410A1 Improved heteroepitaxial growth using ion implantation
12/19/2012EP2535440A1 Chemical vapor deposition apparatus
12/19/2012EP2534094A2 Induction for thermochemical processes, and associated systems and methods
12/19/2012EP2533975A2 Architectural construct having for example a plurality of architectural crystals
12/19/2012CN202610394U Sapphire wafer
12/19/2012CN102828251A Method for preparing aluminum nitride single crystal material
12/19/2012CN102828250A Growing method for GaN nanowire
12/19/2012CN102828249A Method for preparing monocrystalline silicon carbide nano-wires on flexible carbon fiber substrate
12/19/2012CN102828240A Method for preparing GaN film material
12/19/2012CN102828239A Method for preparing self-supporting substrate from gallium nitride single-crystal materials by self-separating by aid of defect and stress removal technology
12/19/2012CN102828238A Method for improving surface temperature field of substrate wafer during epitaxial growth
12/18/2012CA2677414C N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof
12/13/2012US20120312693 Debonding and transfer techniques for hetero-epitaxially grown graphene, and products including the same
12/13/2012DE112004001230B4 Züchtungsverfahren für Nitridhalbleiter-Epitaxieschichten The growth method of nitride semiconductor epitaxial layers
12/12/2012EP2532022A2 Method for manufacturing galium naitride wafer
12/12/2012CN202595339U Baffle
12/12/2012CN102822396A Process for producing epitaxial single-crystal silicon carbide substrate and epitaxial single-crystal silicon carbide substrate obtained by process
12/12/2012CN102822395A Method for producing single crystal 3C-SiC substrate and resulting single-crystal 3C-SiC substrate
12/12/2012CN102817082A Preparation method for silicon films
12/12/2012CN102817077A Doping method for transition metal oxide nanowire array
12/12/2012CN102817074A In-situ stress control-based self-separation method for III-nitride thick membrane
12/12/2012CN102817073A Method for growing In-rich nonpolar A-surface InGaN film
12/11/2012US8328936 Producing a diamond semiconductor by implanting dopant using ion implantation
12/11/2012US8328935 Method of manufacturing polycrystalline silicon rod
12/06/2012WO2012164827A1 Vapor phase epitaxy method and light emitting element substrate manufacturing method
12/06/2012US20120305983 Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting device
12/06/2012US20120305935 Apparatus for producing metal chloride gas and method for producing metal chloride gas, and apparatus for hydride vapor phase epitaxy, nitride semiconductor wafer, nitride semiconductor device, wafer for nitride semiconductor light emitting diode, method for manufacturing nitride semiconductor freestanidng substrate and nitride semiconductor crystal
12/06/2012US20120304930 Chamber exhaust in-situ cleaning for processing apparatuses
12/06/2012US20120304927 In-situ flux measurment devices, methods, and systems
12/06/2012US20120304919 Method For Growing Germanium Epitaxial Films
12/06/2012US20120304918 beta-Ga2O3 SINGLE CRYSTAL GROWING METHOD, THIN-FILM SINGLE CRYSTAL GROWING METHOD, Ga2O3 LIGHT-EMITTING DEVICE, AND ITS MANUFACTURING METHOD
12/06/2012DE112010005101T5 Epitaxial-wafer und halbleiterelement Epitaxial wafer and semiconductor element
12/05/2012EP2530184A2 Polysilicon deposition
12/05/2012CN202576646U Non-polar InN film grown on LiGaO2 substrate
12/05/2012CN202576645U Graphite base
12/05/2012CN102808221A Growth technology for growing high-quality GaN crystal material on sapphire patterned substrate
12/05/2012CN102234792B Suspended spraying type metal organic chemical vapor deposition (MOCVD) reactor
12/04/2012US8323737 Sequential chemical vapor deposition
12/04/2012US8323407 Gallium trichloride injection scheme
12/04/2012US8323406 Defect reduction in seeded aluminum nitride crystal growth
11/2012
11/29/2012WO2012161265A1 Method and apparatus for producing semiconductor thin film crystal
11/29/2012US20120299061 Method for manufacturing epitaxial crystal substrate, epitaxial crystal substrate and semiconductor device
11/29/2012US20120298995 Wafer and epitaxial wafer, and manufacturing processes therefor
11/28/2012EP2526220A1 Cvd single crystal diamond material
11/28/2012CN102803581A Method for equipping an epitaxy reactor
11/28/2012CN102797034A Support boat for GaN material epitaxy industrialization
11/28/2012CN102795627A Multi-parameter online monitoring and optimizing control device and method of polycrystalline silicon reduction furnace
11/28/2012CN102212878B Method for preparing acicular and fungiform Bi2O3 nano materials
11/27/2012US8318269 Induction for thermochemical processes, and associated systems and methods
11/27/2012US8317921 In situ growth of oxide and silicon layers
11/22/2012US20120291698 Methods for improved growth of group iii nitride semiconductor compounds
11/22/2012US20120291697 Manufacturing apparatus and method for semiconductor device
11/22/2012US20120291696 Method and apparatus for crystal growth using a membrane-assisted semi-closed reactor
11/21/2012EP2524979A1 Single-crystal substrate, group iii element nitride crystal obtained using same, and process for produicng group iii element nitride crystal
11/21/2012CN202543389U Graphite plate for improving wavelength uniformity of 4-inch epitaxial wafer in metal organic chemical vapor deposition (MOCVD) cabinet
11/21/2012CN102191540B Method for growing horizontally arranged zinc oxide nanowires on non-polar sapphire substrate
11/21/2012CN102176496B Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof
11/21/2012CN102154691B Slit type multi-gas transmission spray nozzle structure
11/21/2012CN101519799B Method for preparing non-polar GaN thick film on sapphire substrate
11/21/2012CN101497443B Reactor cleaning apparatus
11/15/2012WO2012152685A1 Diamond sensors, detectors, and quantum devices
11/15/2012WO2012152617A1 Diamond sensors, detectors, and quantum devices
11/15/2012US20120285371 Method for making flat substrate from incremental-width nanorods with partial coating
11/14/2012CN102782809A Epitaxial wafer, light-receiving element, optical sensor device, and method for manufacturing epitaxial wafer and light-receiving element
11/14/2012CN102782195A Semiconductor epitaxial substrate
11/14/2012CN102781570A Carbon-based containment system
11/14/2012CN102776567A Method for preparing wurtzite phase MxZn1-xO single crystal film on Si substrate
11/14/2012CN102776559A Method for conveying ammonia gas
11/14/2012CN102776490A Gas supply apparatus, thermal treatment apparatus, gas supply method and thermal treatment method
11/14/2012CN102230216B Preparation method of laminar plasma of single crystal diamond
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