| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 07/14/2011 | WO2011083552A1 Epitaxial wafer and semiconductor element |
| 07/14/2011 | US20110168968 Fluidic nanotubes and devices |
| 07/13/2011 | EP1618227B1 Method and device for depositing semiconductor layers using two process gases, of which one is preconditioned |
| 07/13/2011 | CN1988113B Process for selective masking of iii-n layers and for the preparation of free-standing iii-n layers or of devices, and products obtained thereby |
| 07/13/2011 | CN102122691A LED (light-emitting diode) epitaxial wafer, LED structure and formation method of LED structure |
| 07/13/2011 | CN101256936B Method and apparatus for controlling gas flow to a processing chamber |
| 07/12/2011 | US7977673 Semiconductor layer with a Ga2O3 system |
| 07/12/2011 | CA2440666C Aluminum alloy sheet with excellent formability and paint bake hardenability and method for production thereof |
| 07/06/2011 | CN102119243A Growth of planar non-polar {1-1 0 0} m-plane and semi-polar {1 1-2 2} gallium nitride with hydride vapor phase epitaxy (HVPE) |
| 07/06/2011 | CN102115878A Preparation method of single crystal cubic carbon nitride thin film |
| 07/06/2011 | CN101562205B Nano-structure and a manufacturing method thereof |
| 07/05/2011 | US7972711 Large area, uniformly low dislocation density GaN substrate and process for making the same |
| 07/05/2011 | CA2648378C Process for depositing polycrystalline silicon |
| 06/30/2011 | WO2011076921A1 Method for coating a substrate with aluminum-doped zinc oxide |
| 06/30/2011 | WO2011076643A1 Synthetic cvd diamond |
| 06/30/2011 | WO2011076642A1 Single crystal diamond material |
| 06/30/2011 | US20110160065 Phase-separated, epitaxial composite cap layers for electronic device applications and method of making the same |
| 06/30/2011 | US20110155049 Modern hydride vapor-phase epitaxy system & methods |
| 06/30/2011 | CA2782183A1 Single crystal diamond material |
| 06/30/2011 | CA2782159A1 Synthetic cvd diamond |
| 06/29/2011 | EP2339053A2 Manufacturing apparatus and manufacturing method of silicon carbide single crystal |
| 06/29/2011 | EP1654752B1 Holder for supporting wafers during semiconductor manufacture |
| 06/29/2011 | CN201883182U Epitaxial growth equipment |
| 06/29/2011 | CN102112655A Atomic layer deposition apparatus and loading methods |
| 06/29/2011 | CN102108547A Multi-substrate large-size hydride vapor phase epitaxy method and device |
| 06/29/2011 | CN102108496A Film deposition apparatus and film deposition method |
| 06/29/2011 | CN101636849B Iii-nitride light emitting devices grown on templates to reduce strain |
| 06/29/2011 | CN101319361B 单晶金刚石 Single crystal diamond |
| 06/23/2011 | WO2011074453A1 SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME |
| 06/23/2011 | US20110151226 Synthetic cvd diamond |
| 06/23/2011 | US20110150745 Single crystal diamond material |
| 06/23/2011 | US20110147739 Semiconductor device and method for manufacturing the same |
| 06/23/2011 | US20110146565 Group iii nitride crystal and method for surface treatment thereof, group iii nitride stack and manufacturing method thereof, and group iii nitride semiconductor device and manufacturing method thereof |
| 06/22/2011 | EP2337062A2 Method for making semiconductor structures with structural homogeneity |
| 06/22/2011 | EP2336397A2 Non-polar (Al,B,In,Ga)N-based device with a reduced dislocation density and method for its manufacture |
| 06/22/2011 | EP2334839A2 Method for the controlled growth of a graphene film |
| 06/22/2011 | DE102008001005B4 Verfahren zur Herstellung eines Schichtverbundes mit epitaktisch gewachsenen Schichten aus einem magnetischen Formgedächtnis-Material und Schichtverbund mit epitaktischen Schichten aus einem magnetischen Formgedächtnis-Material sowie dessen Verwendung A method for producing a layered composite with epitaxially grown layers of a magnetic shape memory material and layer composite with epitaxial layers of a magnetic shape memory material and its use |
| 06/22/2011 | CN1840748B Diamond substrate and manufacturing method thereof |
| 06/22/2011 | CN102104060A Semiconductor structure and forming method thereof |
| 06/22/2011 | CN102102223A Group IIIA nitride semiconductor substrate and manufacturing method of the same |
| 06/22/2011 | CN102102220A Preparation method of graphene on diamond (111) surface |
| 06/22/2011 | CN101338452B High-density carbon nanotube array and method for preparing same |
| 06/22/2011 | CN101319369B Method of preparing type p ZnO nano-wire |
| 06/21/2011 | US7964483 Growth method for nitride semiconductor epitaxial layers |
| 06/21/2011 | US7964477 Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device |
| 06/21/2011 | US7964280 High colour diamond layer |
| 06/16/2011 | US20110143525 Nitride semiconductor substrate and manufacturing method thereof |
| 06/16/2011 | US20110140122 LARGE AREA, UNIFORMLY LOW DISLOCATION DENSITY GaN SUBSTRATE AND PROCESS FOR MAKING THE SAME |
| 06/16/2011 | DE102009042349B4 Semipolare wurtzitische Gruppe-III-Nitrid basierte Halbleiterschichten und darauf basierende Halbleiterbauelemente Semi-polar wurtzite-type group III nitride based semiconductor layers that form the basis semiconductor devices |
| 06/15/2011 | EP2333848A1 Light emitting device and light emitting device package |
| 06/15/2011 | EP2333819A1 Method for fabricating p-type gallium nitride-based semiconductor, method for fabricating nitride-based semiconductor element, and method for fabricating epitaxial wafer |
| 06/15/2011 | EP2332167A2 Vapor phase epitaxy system |
| 06/15/2011 | EP2331725A1 Epitaxial reactor for silicon deposition |
| 06/15/2011 | CN101319377B Nano SrAl2O4 material and method for producing the same |
| 06/15/2011 | CN101245491B Method for growing unsupported gallium nitride nanocrystalline on zinc oxide of nano-stick |
| 06/14/2011 | US7960727 Zinc oxide based compound semiconductor device |
| 06/14/2011 | US7959731 Method for producing semiconductor wafer |
| 06/09/2011 | US20110136343 Composition and method for low temperature deposition of silicon-containing films |
| 06/09/2011 | US20110134509 Wavelength conversion element and method for manufacturing wavelength conversion element |
| 06/09/2011 | US20110132255 Method for producing epitaxial silicon wafer |
| 06/08/2011 | EP2329056A1 Uv absorption based monitor and control of chloride gas stream |
| 06/08/2011 | CN1924116B Process for producing silicon wafer |
| 06/08/2011 | CN101506947B Method for producing a doped III-N solid crystal and a free-standing doped III-N substrate, and doped III-N solid crystal and free-standing doped III-N substrate |
| 06/07/2011 | US7956427 Nanosensors |
| 06/07/2011 | US7955437 Apparatus for fabricating a III-V nitride film |
| 06/07/2011 | US7955435 Method of producing high quality relaxed silicon germanium layers |
| 06/07/2011 | US7955434 Diamond single crystal substrate |
| 06/03/2011 | WO2011065534A1 Process for producing single-crystal aluminum nitride |
| 06/02/2011 | US20110129669 Nitride semiconductor crystal and its production method |
| 06/01/2011 | CN102080258A MnAs nanowires and preparation method thereof |
| 06/01/2011 | CN102080257A Method for preparing high-Mn (In, Mn) As nanodot |
| 05/26/2011 | US20110120366 Susceptor, film forming apparatus and method |
| 05/25/2011 | EP2324513A2 Solar cells fabricated by using cvd epitaxial si films on metallurgical-grade si wafers |
| 05/25/2011 | CN102076891A Diamond material |
| 05/25/2011 | CN101425474B Method and apparatus for providing an electrostatic chuck with reduced plasma penetration and arcing |
| 05/25/2011 | CN101317247B Epitaxial growth of nitride compound semiconductors structures |
| 05/24/2011 | US7949237 Heating configuration for use in thermal processing chambers |
| 05/19/2011 | WO2011058968A1 Method for producing laminate |
| 05/19/2011 | US20110117376 Method of Gallium Nitride growth over metallic substrate using Vapor Phase Epitaxy |
| 05/19/2011 | US20110114965 Methods of fabricating semiconductor structures and devices using glass bonding layers, and semiconductor structures and devices formed by such methods |
| 05/19/2011 | US20110114016 AlGaN BULK CRYSTAL MANUFACTURING METHOD AND AlGaN SUBSTRATE MANUFACTURING METHOD |
| 05/19/2011 | US20110114015 Method and apparatus for fabricating crack-free group iii nitride semiconductor materials |
| 05/19/2011 | US20110114014 Method for manufacturing epitaxial wafer and wafer holder used in the method |
| 05/18/2011 | EP2322699A2 Process for producing III-N substrates |
| 05/18/2011 | EP1774056B1 Method for the deposition of layers containing silicon and germanium |
| 05/18/2011 | EP1405018B1 Wafer boat with arcuate wafer support arms |
| 05/18/2011 | CN102061519A Method for growing GaN-based thin film with Si substrate |
| 05/18/2011 | CN102061518A Precise control method for growth starting temperature of mercury cadmium telluride liquid phase epitaxy system |
| 05/18/2011 | CN101248210B High colour diamond |
| 05/17/2011 | US7942966 Method of growing boron doped single crystal diamond in a plasma reactor |
| 05/12/2011 | WO2011056890A1 Growth of planar non-polar {10-10} m-plane gallium nitride with hydride vapor phase epitaxy (hvpe) |
| 05/12/2011 | US20110108886 Method of controlling stress in group-iii nitride films deposited on substrates |
| 05/11/2011 | EP1268882B1 Axial gradient transport apparatus and process for producing large size, single crystals of silicon carbide |
| 05/11/2011 | CN102057079A Arrangement in connection with ald reactor |
| 05/11/2011 | CN102051675A Method for manufacturing CuO nanowire |
| 05/11/2011 | CN101591803B High-temperature carborundum double-chamber hot wall type epitaxial growth device |
| 05/11/2011 | CN101560647B Preparation method of GaN-based material featuring epitaxial layer growth |
| 05/11/2011 | CN101086083B Method for preparing group III nitride substrate |
| 05/10/2011 | CA2660075C Method and apparatus for preparation of granular polysilicon |
| 05/10/2011 | CA2654896C Method for continual preparation of polycrystalline silicon using a fluidized bed reactor |