Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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06/18/2014 | CN203653766U 一种炉体清洁的观察装置 Clean furnace observation apparatus |
06/18/2014 | CN203653763U 一种多晶硅铸锭防止裂纹用保温箱 One kind of polycrystalline silicon ingot to prevent cracking by incubator |
06/18/2014 | CN203653761U 用于导模法同时生长多根管状蓝宝石的模具 Simultaneous growth of the guided mode for a plurality of tubular mold sapphire |
06/18/2014 | CN203653760U 用于导模法生长大直径管状蓝宝石的模具 Guided mode for grown large diameter sapphire tubular mold |
06/18/2014 | CN203653759U 一种蓝宝石单晶生长炉炉体冷却系统 One kind of sapphire crystal growth furnace furnace cooling system |
06/18/2014 | CN203653758U 一种用于晶体生长炉冷却水量调节的控制装置 Control apparatus for crystal growth furnace cooling water regulation |
06/18/2014 | CN203653757U 一种炉体清洁的防尘装置 One kind of furnace dust cleaning device |
06/18/2014 | CN203653756U 一种能增加投料量的多晶硅铸锭坩埚装料结构 One kind of investment can increase the quantity of polysilicon ingot crucible charge structure |
06/18/2014 | CN203653755U 一种基于石英颗粒镶嵌层的多晶硅铸锭用坩埚 Based on a layer of quartz grains embedded polysilicon ingot crucible |
06/18/2014 | CN203653754U 一种高效多晶硅铸锭生产用装料结构 An efficient production of polysilicon ingots charging structure |
06/18/2014 | CN203653753U 一种带隔离涂层的多晶硅铸锭用坩埚 A release coating with polycrystalline silicon ingot crucible |
06/18/2014 | CN203653752U 长晶炉 Crystal growth furnace |
06/18/2014 | CN203653751U 新型长晶炉 The new crystal growth furnace |
06/18/2014 | CN203653746U 一种单晶炉硅液泄露保护装置 Single crystal silicon furnace fluid leak protection |
06/18/2014 | CN203653740U 一种高效多晶硅提纯用大容量装料结构 A highly purified polycrystalline structure with a large loading capacity |
06/18/2014 | CN203650431U 拆装电极螺栓专用工具 Special tools electrode bolt disassembly |
06/18/2014 | CN103866400A Sapphire production system |
06/18/2014 | CN103866397A Surface pretreatment device for polycrystalline silicon ingot and treatment method thereof |
06/18/2014 | CN103866392A Low rhenium and nickel-based single crystal high-temperature alloy and preparation method thereof |
06/18/2014 | CN103866391A Infrared nonlinear optical powder and mono-crystal selenium-germanium-gallium-lead |
06/18/2014 | CN103866390A Method for doping zinc into gallium phosphide polycrystal |
06/18/2014 | CN103866389A Preparation method of porous single crystal nanosheet TiN on carbon fiber and use |
06/18/2014 | CN103866388A Cubic-phase fluorite type terbium and calcium niobate magneto-optical crystal and preparation method thereof |
06/18/2014 | CN103866387A (Yb<3+>: LaMgB5O10) doped laser crystal and preparation method thereof |
06/18/2014 | CN103866386A Preparation method of novel ternary piezoelectric crystal monophase material |
06/18/2014 | CN103866385A Magnesium borate crystal whisker preparation method |
06/18/2014 | CN103866384A Polycrystalline silicon ingot furnace with overflow protection function |
06/18/2014 | CN103866383A Energy-saving device for polycrystalline silicon ingot furnace |
06/18/2014 | CN103866382A On-line polycrystalline silicon ingot furnace supplementing system |
06/18/2014 | CN103866381A Novel directional solidification method for preparing silicon ingots with low dislocation density |
06/18/2014 | CN103866380A Method for carrying out GaN single crystal growth by using graphic annealing porous structure |
06/18/2014 | CN103866379A Method of preparing GaP film material |
06/18/2014 | CN103866378A Method for growing accessory-grade demantoid single crystal |
06/18/2014 | CN103866376A Technical method for drawing high-resistivity zone-melting single crystal silicon with diameter of 80mm |
06/18/2014 | CN103866370A Method for preparing low-oxygen titania nanotube array |
06/18/2014 | CN103866276A Method for preparing co-doped zinc oxide thin film through atomic layer deposition |
06/18/2014 | CN103866273A Method for preparing N-Zr-codoped zinc oxide film through atomic layer deposition |
06/18/2014 | CN103866270A Preparation method for Te-N co-doping of zinc oxide thin film |
06/18/2014 | CN103864825A Mixed ligand-based zinc complex and preparation method thereof |
06/18/2014 | CN103864142A Method for preparing antase titanium dioxide nanowire array by virtue of one-step process |
06/18/2014 | CN102534767B Na-mixing method for growing p-type ZnO single crystal film |
06/18/2014 | CN102418144B Manufacturing method of 4-inch C-directional sapphire crystal |
06/18/2014 | CN102414348B Method for fabricating SIC substrate |
06/18/2014 | CN102400212B Method for obtaining polycrystal optical zinc selenide |
06/18/2014 | CN102383192B Growth method of germanium substrate and germanium substrate |
06/18/2014 | CN102268737B Method for producing III-n layers, and III-n layers or III-n substrates, and devices based thereon |
06/18/2014 | CN101772597B Nanocrystalline alloys of the Fe3Al(Ru) type and use thereof optionally in nanocrystalline form for making electrodes for sodium chlorate synthesis |
06/17/2014 | US8753916 Semiconductor-nanocrystal/conjugated polymer thin films |
06/12/2014 | WO2014087799A1 Piezoelectric member, elastic wave apparatus, and piezoelectric member manufacturing method |
06/12/2014 | US20140162021 Method for producing graphene, and graphene produced by the method |
06/11/2014 | EP2741317A1 Epitaxial wafer manufacturing device and manufacturing method |
06/11/2014 | EP2741316A1 Epitaxial wafer manufacturing device and manufacturing method |
06/11/2014 | EP2739934A1 Transparent composite pane for safety applications |
06/11/2014 | EP2739772A1 Ordered superstructures of octapod - shaped nanocrystals, their process of fabrication and use thereof |
06/11/2014 | EP2739771A1 Liquid-cooled heat exchanger |
06/11/2014 | CN203639607U 单晶炉智能语音提示系统 Puller intelligent voice prompt system |
06/11/2014 | CN203639606U 一种用于区熔炉多晶棒夹持机构 An area of the furnace polycrystalline rod clamping mechanism for |
06/11/2014 | CN203639605U 一种喷涂坩埚安全出入加温箱的装置 A spraying out of the crucible heating tank safety device |
06/11/2014 | CN203639599U 一种坩埚旋转磁密封装置 One kind of crucible rotation magnetic seal means |
06/11/2014 | CN203639598U 用于单晶炉的外部装料机构 External loading mechanism for single crystal furnace |
06/11/2014 | CN203639597U 一种可实现区熔炉保温环二维调节机构 Which can realize zone furnace insulation ring dimensional adjustment mechanism |
06/11/2014 | CN203639596U 用于七根硅芯生产带葫芦形拉制孔的高频感应线圈装置 High frequency induction coil means for the seven core production gourd-shaped silicon strip drawn hole |
06/11/2014 | CN203639595U 一种多晶硅铸锭炉 One kind of polycrystalline silicon ingot furnace |
06/11/2014 | CN103857835A Semiconductor wafer manufacturing method, and semiconductor wafer |
06/11/2014 | CN103857765A Single-crystal silicon-carbide substrate and polishing solution |
06/11/2014 | CN103849936A Method for preparing calcium sulfate whisker by adopting wollastonite as raw material |
06/11/2014 | CN103849935A Quartz ampoule for zinc telluride crystal space growth |
06/11/2014 | CN103849934A Preparation method of nano Cr3C2 crystal whisker |
06/11/2014 | CN103849933A Method for growing Ce<3+> doped lutetium yttrium silicate scintillation crystal |
06/11/2014 | CN103849932A Fluorin boric acid barium sodium ultraviolet birefringent crystal, as well as growth method and application thereof |
06/11/2014 | CN103849931A Polycrystalline silicon ingoting process for bottom compensated boron element |
06/11/2014 | CN103849930A Temperature control device and temperature control method for impregnated tellurium, cadmium and mercury liquid phase epitaxy |
06/11/2014 | CN103849928A Multiple-piece guided mode method growth technology for sapphire wafer |
06/11/2014 | CN103849927A Doping device and doping method using vertical pulling method to grow low resistivity single crystal silicon |
06/11/2014 | CN103849926A Method and equipment for pulling high-activity metal monocrystalline |
06/11/2014 | CN103849925A An improved crucible used for ingot casting |
06/11/2014 | CN103849924A Method for preparing nano-magnesium hydroxide whisker by using magnesium hydroxide whisker |
06/11/2014 | CN103849853A Method for relieving stress between silicon substrate and gallium nitride film during MOCVD (Metal Organic Chemical Vapor Deposition) process |
06/11/2014 | CN102362017B Silicon wafer and method of manufacturing same |
06/11/2014 | CN102357654B Method and device for directionally solidifying liquid/solid interface based on ultrasonic wave modulation |
06/11/2014 | CN102159755B Method for producing nitride semiconductor crystal, nitride semiconductor crystal, and apparatus for producing nitride semiconductor crystal |
06/10/2014 | US8748326 Device and method for forming low-temperature polysilicon film |
06/10/2014 | US8747552 Doped aluminum nitride crystals and methods of making them |
06/10/2014 | CA2479683C Semiconductor-nanocrystal/conjugated polymer thin films |
06/05/2014 | WO2014085391A1 Weir for improved crystal growth in a continuous czochralski process |
06/05/2014 | WO2014084105A1 Composite substrate and functional element |
06/05/2014 | US20140150716 Melt fixture including thermal shields having a stepped configuration |
06/05/2014 | DE112012003278T5 Filme von Nitriden von Gruppe-13-Elementen und geschichteter Körper, der dieselben beinhaltet Movies of nitrides of Group 13 elements and layered body including the same |
06/04/2014 | EP2738793A1 Method of Growing Nitride Semiconductor Layer, Nitride Semiconductor Device, and Method of Fabricating the Same |
06/04/2014 | EP2738291A1 Silicon carbide single crystal manufacturing device |
06/04/2014 | EP2737305A1 Determining the dopant content of a compensated silicon sample |
06/04/2014 | EP2737304A1 Determining the dopant content of a compensated silicon sample |
06/04/2014 | EP2737112A1 Diamond semiconductor system and method |
06/04/2014 | CN203625530U 一种用于生产激光晶体的铱金坩埚 Iridium crucible used for producing a laser crystal |
06/04/2014 | CN203625529U 一种硅锭铸造装置 A silicone ingot casting apparatus |
06/04/2014 | CN203625528U 铸锭炉 Ingot furnace |
06/04/2014 | CN203625527U 一种用于感应炉提拉法生产晶体的轻质铱杆 Lightweight iridium rod for induction furnace Czochralski crystal production |
06/04/2014 | CN203625525U 用于蓝宝石长晶炉热场的隔热桶 Sapphire Dan Changjing furnace for heat insulation barrel field |
06/04/2014 | CN103843160A Method for producing an opto-electronic semiconductor chip and corresponding opto-electronic semiconductor chip |
06/04/2014 | CN103842806A Determining the dopant content of a compensated silicon sample |