Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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03/05/2014 | CN101676216B Potassium stibium zincate compound, single crystalloid, preparation method and usage thereof |
03/05/2014 | CN101392408B Reactor for polycrystalline silicon and polycrystalline silicon production method |
03/04/2014 | US8663388 Method of manufacturing single crystal wire and other single crystal metallic articles |
02/27/2014 | WO2014031152A1 A bismuth-doped semi-insulating group iii nitride wafer and its production method |
02/27/2014 | WO2014031119A1 Highly transparent aluminum nitride single crystalline layers and devices made therefrom |
02/27/2014 | WO2014030866A1 Single crystal growing device, and raw material supplying device and raw material supplying method applied to same |
02/27/2014 | WO2014030776A1 Method for growing zirconium nitride crystal |
02/27/2014 | WO2014029005A1 Method for continuous preparation of indium-tin coprecipitates and indium-tin-oxide nanopowders with substantially homogeneous indium/tin composition, controllable shape and particle size |
02/27/2014 | WO2012118944A3 Techniques for producing thin films of single crystal diamond |
02/27/2014 | US20140058029 Hexagonal prism-shaped zinc oxide particles, method for production of the same, and cosmetic, heat releasing filler, heat releasing resin composition, heat releasing grease, and heat releasing coating composition comprising the same |
02/27/2014 | DE112012002470T5 Verfahren zur Züchtung des AIN-Einkristalls und Vorrichtung zu seiner Umsetzung Processes for the production of AlN single crystal and apparatus for its implementation |
02/27/2014 | DE10339792B4 Verfahren und Vorrichtung zur Herstellung eines Einkristalls aus Silicium Method and apparatus for producing a single crystal of silicon |
02/26/2014 | EP2701182A2 Semiconductor laminate, semiconductor device, method for producing semiconductor laminate, and method for manufacturing semiconductor device |
02/26/2014 | EP2700739A1 Epitaxial silicon carbide single-crystal substrate and process for producing same |
02/26/2014 | EP2699716A2 Side feed system for czochralski growth of silicon ingots |
02/26/2014 | EP2699715A1 An arrangement for manufacturing crystalline silicon ingots |
02/26/2014 | CN203451646U Ingot furnace and heat exchange device thereof |
02/26/2014 | CN203451644U Polycrystalline-casting thermal field control device |
02/26/2014 | CN203451615U Quartz platform for growing graphene |
02/26/2014 | CN103608899A Substrate, semiconductor device, method for producing substrate, and method for manufacturing semiconductor device |
02/26/2014 | CN103608499A High temperature furnace insulation |
02/26/2014 | CN103608498A Silicon carbide substrate, semiconductor device, method for producing silicon carbide substrate, and method for manufacturing semiconductor device |
02/26/2014 | CN103608497A SiC single crystal and manufacturing process therefor |
02/26/2014 | CN103608496A Silicon ingot having uniform multiple dopants and method and apparatus for producing same |
02/26/2014 | CN103606514A Chemical corrosion transfer method based on GaN substrate CVD epitaxial growth graphene |
02/26/2014 | CN103603054A Method for preparing lithium tantalite wafer |
02/26/2014 | CN103603053A Method for preparing crystalline silicon solar cells |
02/26/2014 | CN103603050A Method for preparing ZnO nano-whisker through liquid phase |
02/26/2014 | CN103603049A Multi-piece nitride monocrystal material growing device and method |
02/26/2014 | CN103603048A Chemical vapor deposition equipment used for producing silicon carbide epitaxial wafer |
02/26/2014 | CN103603047A Chromium, manganese or cobalt-doped lanthanum gallium silicate crystal and melt growth method thereof |
02/26/2014 | CN103603046A Iron-doped lanthanum gallium silicate crystal and growth method thereof by melt methods |
02/26/2014 | CN103603045A Preparation method of erbium doped tetragonal phase lead titanate monocrystal nano fiber with perovskite structure |
02/26/2014 | CN103603044A Niobium-rich lithium-doped potassium tantalate niobate single crystal and preparation method thereof |
02/26/2014 | CN103603043A Method for growing calcium-doped YBCO quasi monocrystal from embedded seed crystal |
02/26/2014 | CN103603042A Ferroelectric monocrystal yttrium lead niobate-magnesium lead niobate-lead titanate as well as preparation and application thereof |
02/26/2014 | CN103603041A Method for preparing high activity TiO2 nano-single crystal from waste electrolyte solution |
02/26/2014 | CN103603040A Low temperature liquid phase growing method for preparing ZnO nanocone array |
02/26/2014 | CN103603039A Purification method for polycrystalline silicon ingot leftovers |
02/26/2014 | CN103603037A 碳化硅籽晶粘接装置 SiC seed crystal bonding apparatus |
02/26/2014 | CN103603036A Crucible for growing silicon carbide crystal |
02/26/2014 | CN103603035A Crystal growth lifting device and crystal growth furnace using same |
02/26/2014 | CN103603034A Method for preparing large-sized high-temperature superconducting monocrystals |
02/26/2014 | CN103603032A Method for controlling crystallization velocity during silicon ingot casting |
02/26/2014 | CN103603031A Method for preparation of high quality single crystal material by regulating internal flow field of kettle body |
02/26/2014 | CN103603030A Preparation method of lead titanate monocrystal nano fiber with controllable size and one-dimensional columnar structure |
02/26/2014 | CN103603028A Method for preparing lithium oxide or monocrystal lithium hydroxide |
02/26/2014 | CN102828175B Method for forming micro-nano structured iron tungstate on surface of ferrous metal |
02/26/2014 | CN102325928B Silica glass crucible |
02/26/2014 | CN102312282B Two-stage feeding device for polysilicon ingot casting |
02/26/2014 | CN102134741B Method for pulling a single crystal composed of silicon with a section having a diameter that remains constant |
02/25/2014 | CA2745475C A method to control the dispersibility and barrier properties of dried nanocrystalline cellulose in solutions of different ph and ionic strength |
02/22/2014 | CA2787584A1 Method for continuous preparation of indium-tin coprecipitates and indium-tin-oxide nanopowders with substantially homogeneous indium/tin composition, controllable shape and particle size |
02/20/2014 | WO2014028831A1 System and method of growing silicon ingots from seeds in a crucible and manufacture of seeds used therein |
02/20/2014 | WO2014026930A1 Thick polycrystalline synthetic diamond wafers for heat spreading applications and microwave plasma chemical vapour deposition synthesis techniques |
02/20/2014 | WO2014026292A1 Arbitrarily thin ultra smooth film with built-in separation ability and method of forming the same |
02/20/2014 | WO2013102731A3 Method for the low-temperature production of radial-junction semiconductor nanostructures, radial junction device, and solar cell including radial-junction nanostructures |
02/20/2014 | US20140050652 Graphene and its growth |
02/20/2014 | US20140050649 Methods Apparatus for Manufacturing Geometric Multi-Crystalline Cast Materials |
02/20/2014 | DE112012001486T5 Verfahren zur Herstellung eines Einkristallingots und hierdurch hergestellter Einkristallingot und Wafer A method for producing a single crystal ingot produced thereby single-crystal ingot and wafer |
02/19/2014 | EP2698456A1 Method for manufacturing group iii nitride crystal and group iii nitride crystal |
02/19/2014 | EP2698455A1 Perovskite-type manganese oxide thin film |
02/19/2014 | EP2697836A1 Led wavelength-converting structure including a textured thin film structure |
02/19/2014 | EP2697412A2 Silicon ingot having uniform multiple dopants and method and apparatus for producing same |
02/19/2014 | CN203440499U Energy-saving sapphire crystal furnace |
02/19/2014 | CN203440498U Multidirectional connector for aluminum oxide single crystal growth |
02/19/2014 | CN203440497U Polysilicon ingot furnace |
02/19/2014 | CN203440496U Sapphire seed chuck with double positioning pins |
02/19/2014 | CN203440495U Trisected disk weighing device for sapphire furnace |
02/19/2014 | CN203440494U External continuous feeding device shared by multiple coil bases |
02/19/2014 | CN203440492U Loading and unloading clamp for polysilicon ingot furnace |
02/19/2014 | CN203440091U System for drying silicon powder and accelerant |
02/19/2014 | CN103597129A Apparatus for producing SiC single crystal by solution growth method, method for producing SiC single crystal using apparatus for producing SiC single crystal by solution growth method, and crucible used in apparatus for producing SiC single crystal |
02/19/2014 | CN103597128A Silica vessel for drawing up monocrystalline silicon and method for producing same |
02/19/2014 | CN103597127A Side feed system for Czochralski growth of silicon ingots |
02/19/2014 | CN103590111A Annealing method of cerium-doped yttrium aluminium garnet wafer for white-light LED (Light Emitting Diode) |
02/19/2014 | CN103590108A Infrared non-linear optical monocrystal sulfur tin barium |
02/19/2014 | CN103590107A Compound caesium zinc borate, and caesium zinc borate nonlinear optical crystal and preparation method and application thereof |
02/19/2014 | CN103590106A Preparation method of strontium fluoroborate nonlinear optical crystals, and applications of strontium fluoroborate nonlinear optical crystals |
02/19/2014 | CN103590105A Silicon ingot casting device |
02/19/2014 | CN103590104A Zinc electrolytic recovery processing method |
02/19/2014 | CN103590103A Argon guide system and argon guide method for polycrystalline silicon ingot furnace |
02/19/2014 | CN103590102A Polycrystalline ingot casting technology capable of improving conversion efficiency of polycrystalline silicon chips |
02/19/2014 | CN103590101A Growth method for reducing density of micro-tubes in large-sized high-quality SiC single crystal |
02/19/2014 | CN103590099A Wafer level graphene controllable epitaxy method based on MOCVD devices |
02/19/2014 | CN103590098A Single crystal furnace counter weight, single crystal furnace, silicon single crystal and pulling method of silicon single crystal |
02/19/2014 | CN103590097A Ingot furnace for producing pseudo-single crystal silicon ingot and ingot casting method for pseudo-single crystal silicon ingot |
02/19/2014 | CN103590096A Ingot furnace and method for controlling retaining height of seed crystals during casting of quasi-single crystal |
02/19/2014 | CN103590094A Preparation method of double-rare earth element doped yttrium oxide flake nanometer single crystals |
02/19/2014 | CN103590093A Method of liquid-phase synthesizing KTP (Potassium Titanyl Phosphate) crystal precursor |
02/19/2014 | CN103588218A CsZn2B3O7 compound, CsZn2B3O7 nonlinear optical crystal as well as preparation method and application of CsZn2B3O7 nonlinear optical crystal |
02/19/2014 | CN102308370B Epitaxial wafer, method for manufacturing gallium nitride semiconductor device, gallium nitride semiconductor device and gallium oxide wafer |
02/19/2014 | CN102286778B Infrared temperature measurement device of polycrystalline furnace and polycrystalline furnace using same |
02/19/2014 | CN102286775B Single crystal furnace capable of realizing fast material change and fast material change method of single crystal furnace |
02/18/2014 | CA2706464C Iii-v nanoparticles and method for their manufacture |
02/13/2014 | WO2014025003A1 Composite substrate and functional element |
02/13/2014 | WO2014024829A1 Processing method for wafer |
02/13/2014 | WO2014024388A1 Method for selecting polycrystalline silicon rod, method for manufacturing polycrystalline silicon ingot and method for manufacturing single crystal silicon |
02/13/2014 | US20140045323 Synthesis, capping and dispersion of nanocrystals |
02/13/2014 | US20140044970 PRODUCTION OF A GaN BULK CRYSTAL SUBSTRATE AND A SEMICONDUCTOR DEVICE FORMED ON A GaN BULK CRYSTAL SUBSTRATE |