Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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05/07/2014 | CN103774216A 熔盐电解和定向凝固组合技术生产太阳能级多晶硅的方法 Directional solidification of molten salt electrolysis and technology to produce solar grade polysilicon combination method |
05/07/2014 | CN103774215A 硅铸锭用坩埚及其涂层制备方法 Silicon ingot crucible and coating preparation |
05/07/2014 | CN103774214A 一种大尺寸氧化物晶体的生长方法 A method of growing large size oxide crystals |
05/07/2014 | CN103774213A 一种使用西门子硅棒作原料拉硅单晶的方法 A method of using Siemens pulling silicon single crystal silicon rod as raw material way |
05/07/2014 | CN103774212A 一种使用悬浮拉制法制作硅单晶的方法 A method of using the suspension method produced silicon single crystal pulling method |
05/07/2014 | CN103774211A 一种铽镱稀土离子双掺杂氟化镥钆锂上转换发光晶体及其制备方法 Gadolinium and lutetium lithium fluoride upconversion crystal and preparation method terbium and ytterbium co-doped rare earth ions |
05/07/2014 | CN103774210A 立式晶舟法的结晶制造装置和结晶制造方法 Apparatus and method for producing the crystalline crystallization method for manufacturing a vertical wafer boat |
05/07/2014 | CN103774209A 硅铸锭用坩埚及其涂层制备方法 Silicon ingot crucible and coating preparation |
05/07/2014 | CN103774208A 一种无孔高结晶硼酸镁纳米晶须的绿色水热合成方法 A non-hole high crystalline magnesium borate nanowhiskers green hydrothermal synthesis method |
05/07/2014 | CN103774187A 一种电沉积制备铂多孔纳米管的方法 An electrical deposition of porous platinum nanotube preparation method |
05/07/2014 | CN103774115A 化学气相沉积装置 Chemical vapor deposition apparatus |
05/07/2014 | CN102471125B 二氧化硅容器及其制造方法 Silica container and its manufacturing method |
05/07/2014 | CN102392305B 一种金属离子掺杂的钇铝石榴石晶体薄膜的制备方法 Method for preparing metal ion-doped yttrium aluminum garnet crystal films |
05/07/2014 | CN102392140B 一种定向凝固去除硅锗合金中金属杂质的方法 As a directional solidification removing metal impurities in silicon-germanium alloy method |
05/07/2014 | CN102337581B 一种溶剂循环使用的氧化锌晶须的低温水热制备方法 A solvent is recycled zinc oxide whisker low temperature hydrothermal preparation method |
05/07/2014 | CN102330152B 一种大规模生产硫酸钙晶须的连续化工艺方法 For large scale continuous process for the production of calcium sulfate whisker |
05/07/2014 | CN102308031B 碳化硅单晶制造用坩埚、以及碳化硅单晶的制造装置和制造方法 Crucible for producing a silicon carbide single crystal, and a manufacturing apparatus and manufacturing method for a silicon carbide single crystal |
05/07/2014 | CN102301041B 二氧化硅容器及其制造方法 Silica container and its manufacturing method |
05/07/2014 | CN101967675B 制造单晶锭的装置 Means for producing a single crystal ingot |
05/07/2014 | CN101914806B 具有改进气路的定向凝固炉 Has improved directional solidification furnace gas path |
05/07/2014 | CN101659409B 高纯度碳材料和被覆有陶瓷膜的高纯度碳材料 And a high-purity carbon material coated with a ceramic film of high purity carbon material |
05/07/2014 | CN101381528B 镓酞菁晶体及其制造方法、感光体和图像形成装置 Gallium phthalocyanine crystal and method of producing the photoreceptor, and image forming apparatus |
05/06/2014 | US8715823 Piezoelectric thin film, method of manufacturing piezoelectric thin film, piezoelectric element, and ink jet recording head |
05/06/2014 | US8715414 Process for producing Si(1-v-w-x)CwAlxNv base material, process for producing epitaxial wafer, Si(1-v-w-x)CwAlxNv base material, and epitaxial wafer |
05/01/2014 | WO2014064347A1 Method for forming a doped silicon ingot of uniform resistivity |
05/01/2014 | WO2014064260A1 Improvement in crystallisation and crystal growth |
05/01/2014 | US20140120373 Method of nucleating the growth a diamond film and a diamond film nucleated thereof |
05/01/2014 | US20140119981 Constructing bismuth antimony thin films with anisotropic single-dirac cones |
04/30/2014 | EP2725124A1 N-type conductive aluminum nitride semiconductor crystal and manufacturing method thereof |
04/30/2014 | EP2725123A1 Method for producing nitride single crystal and autoclave used therefor |
04/30/2014 | EP2725122A1 Silica vessel for drawing up monocrystalline silicon and method for producing same |
04/30/2014 | CN203569242U Crucible for growing SiC crystal |
04/30/2014 | CN203569241U Growth detection device of single crystal silicon rod |
04/30/2014 | CN203569240U Stepless adjustable thermal switch device of thermal field at the bottom of quasi-monocrystalline silicon ingot furnace |
04/30/2014 | CN203569239U Insulation structure of quasi-monocrystalline silicon ingot furnace |
04/30/2014 | CN203569238U Silicon carbide epitaxial growth reaction chamber |
04/30/2014 | CN203569234U Seed crystal rotating lift mechanism for sapphire furnace |
04/30/2014 | CN203569232U Lower heater fixing structure of quasi-monocrystalline silicon ingot furnace |
04/30/2014 | CN203569230U Connector sealing structure of water-cooling disc of quasi-monocrystalline silicon ingot furnace |
04/30/2014 | CN203569229U Gas cooling device at the bottom of quasi-monocrystalline silicon ingot furnace |
04/30/2014 | CN103765559A SiC epitaxial wafer and method for manufacturing same |
04/30/2014 | CN103764882A Single crystal diamond and method for producing same |
04/30/2014 | CN103764881A Semiconductor formation by lateral diffusion liquid phase epitaxy |
04/30/2014 | CN103764880A Purification of a metalloid by consumable electrode vacuum arc remelt process |
04/30/2014 | CN103757705A Preparation method of anhydrous calcium sulfate whisker |
04/30/2014 | CN103757704A Preparation of nickel-base single-crystal high-temperature alloy through light floating zone melting directional solidification method |
04/30/2014 | CN103757703A High-purity large-size silicon carbide single crystal and preparation process thereof |
04/30/2014 | CN103757702A Method for preparing high-temperature inorganic scintillation crystal |
04/30/2014 | CN103757701A Nonlinear optical crystal bismuth potassium iodide, and preparation method and application thereof |
04/30/2014 | CN103757700A Tb<3+>/Yb<3+> double doped lithium lutetium fluoride single crystal for solar spectrum modulation and preparation method thereof |
04/30/2014 | CN103757699A Europium-ion-doped natrium gadolinium fluoride optical crystal and preparation method thereof |
04/30/2014 | CN103757698A Er<3+>/Yb<3+> double-doped NaYF4 up-conversion fluorescence monocrystal and growth method thereof |
04/30/2014 | CN103757697A Inorganic crystal compound and preparation method and application thereof |
04/30/2014 | CN103757696A Carbon fiber thermal insulation bottom board for polycrystalline silicon ingot furnace and manufacture method thereof |
04/30/2014 | CN103757695A Sidewall heat compensation device of polysilicon directional solidification device |
04/30/2014 | CN103757694A Control method of polycrystalline silicon ingot furnace and control system of polycrystalline silicon ingot furnace |
04/30/2014 | CN103757693A Growth method of GaN nanowire |
04/30/2014 | CN103757692A Preparation method of ordered organic semiconductor mono-crystal array film |
04/30/2014 | CN103757691A Polysilicon material re-putting method |
04/30/2014 | CN103757690A Polycrystalline silicon ingot furnace |
04/30/2014 | CN103757689A Method for casting monocrystalline silicon by inducing growth utilizing monocrystalline silicon seed and product |
04/30/2014 | CN103757688A Method for preparing superlattice nanowire array assembled by tellurium-lead telluride nanocrystals |
04/30/2014 | CN103755633A 8-aminoquinoline zinc perchlorate metal complex, and preparation method and application thereof |
04/30/2014 | CN102345169B Array type diamond film and method for making the same |
04/30/2014 | CN102330153B L-tartaric acid ceric sulfate ferroelectric functional material and preparation method thereof |
04/30/2014 | CN102251278B Controllable preparation method of monocrystal copper nanowires |
04/30/2014 | CN102127755B Direct current glow plasma device and preparation method of diamond chip |
04/29/2014 | USRE44870 Aluminum oxide coated cutting tool and method of manufacturing thereof |
04/29/2014 | US8709155 Method of preparing scintillation materials with reduced afterglow |
04/24/2014 | WO2014061196A1 Soi wafer manufacturing method |
04/24/2014 | US20140113136 Unseeded silicon carbide single crystals |
04/24/2014 | US20140110588 Iodide scintillator for radiation detection |
04/23/2014 | EP2722423A2 Silicon wafer and manufacturing method thereof |
04/23/2014 | EP2722422A1 Apparatus for producing sic single crystal by solution growth method, method for producing sic single crystal using apparatus for producing sic single crystal by solution growth method, and crucible used in apparatus for producing sic single crystal by solution growth method |
04/23/2014 | EP2722421A1 Apparatus and method for producing sic single crystal |
04/23/2014 | EP2722420A2 Equipment and method for producing a compound polycrystal, and method for growing a compound single crystal |
04/23/2014 | CN203559164U Pot holder taking tool for single crystal furnace |
04/23/2014 | CN203559162U Equipment for growth of n-type low-resistance gallium arsenide monocrystal |
04/23/2014 | CN203559161U Silicon ingot cooling aid |
04/23/2014 | CN203559160U Device for preparing polycrystalline silicon through coupling of electron beam deoxygenation and initial ingot casting |
04/23/2014 | CN203559159U Device for deoxygenation of polycrystalline silicon by electron beam smelting and continuous ingot casting |
04/23/2014 | CN203559158U Electronic beam smelting polycrystalline silicon deoxidizing and cast ingot coupling equipment |
04/23/2014 | CN203559157U Bilateral exhaust device for ingot furnace |
04/23/2014 | CN203559156U Thermal insulating layer moving device at top of ingot furnace |
04/23/2014 | CN203559155U Quartz crucible and mold for preparing same |
04/23/2014 | CN203559154U Silicon carbide epitaxial growth device |
04/23/2014 | CN203559153U Suspension protection device of secondary charger of single crystal furnace |
04/23/2014 | CN203559152U Straight-pulling mono-crystal furnace |
04/23/2014 | CN203558857U System for activating and drying silicon powder and catalytic agent |
04/23/2014 | CN103748699A Optical substrate and semiconductor light-emitting element |
04/23/2014 | CN103748263A Deposition system having access gates and related method |
04/23/2014 | CN103748262A Direct liquid injection for halide vapor phase epitaxy systems and methods |
04/23/2014 | CN103741225A Water-cooling viewing window of sapphire furnace |
04/23/2014 | CN103741224A Preparation method for high-purity and high-density WS2 lamellar nano structure |
04/23/2014 | CN103741223A Gallium arsenide polycrystal synthesis device |
04/23/2014 | CN103741222A Gallium arsenide polycrystalline synthesis device |
04/23/2014 | CN103741221A Method for growing high-quality gallium nitride (GaN) crystals by using hexagonal boron nitride nanosheets |
04/23/2014 | CN103741220A Method for growing high-quality gallium nitride (GaN) crystals by using graphene or graphene oxide |
04/23/2014 | CN103741219A Continuous feeding device of sapphire furnace |
04/23/2014 | CN103741218A Control device for crystal growth furnace cooling water flow adjustment |