Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/2014
06/04/2014CN103842562A Ordered superstructures of octapod-shaped nanocrystals, their process of fabrication and use thereof
06/04/2014CN103842067A Fine polycrystalline diamond compact with a grain growth inhibitor layer between diamond and substrate
06/04/2014CN103838056A Non-linear optical crystal alpha-AgI3O8 and preparation and application of non-linear optical crystal alpha-AgI3O8
06/04/2014CN103834999A Method for preparing gallium nitride single-crystal substrate by prefabricating cracks
06/04/2014CN103834998A Apatite type silicate terbium magneto-optical crystal and preparation method thereof
06/04/2014CN103834997A Method for preparing calcium carbonate whisker from saccharose by assisting hydrothermal process
06/04/2014CN103834996A Nonlinear optical crystal beta-AgI3O8 as well as preparation and use thereof
06/04/2014CN103834995A Boron beryllate compound, boron beryllate nonlinear optical crystals, and preparation method and applications of boron beryllate nonlinear optical crystals
06/04/2014CN103834994A Polycrystalline silicon ingot and preparation method thereof and polycrystalline silicon wafer
06/04/2014CN103834993A Preparation method of graphene dendritic crystals and graphene dendritic crystals thereof
06/04/2014CN103834991A Open-loop power self-control crystal growth control method without temperature signal treatment
06/04/2014CN103834989A Process of producing calcium sulfate crystal whiskers from chloride-containing wastewater generated in chloride process titanium dioxide production
06/04/2014CN103834988A Preparation method of nano silicon carbide whisker
06/04/2014CN103834385A Water-soluble nanocrystal as well as chemical synthesis method and application thereof
06/04/2014CN103831443A Method for utilizing controllability of ionic liquid water interface to prepare cobalt/cobalt oxide nanofilm
06/04/2014CN102432634B 2-amino-4-(2'-pyridine)-pyrimidine-2-peroxo vanadium ammonium salt complex, method for cultivating single crystal of 2-amino-4-(2'-pyridine)-pyrimidine-2-peroxo vanadium ammonium salt complex, and application of 2-amino-4-(2'-pyridine)-pyrimidine-2-peroxo vanadium ammonium salt complex
06/04/2014CN102418141B Tungsten crucible double-sleeve hoisting frame
06/04/2014CN102358950B Preparation method of cadmium tungstate monocrystal nanoribbon
06/04/2014CN102356186B Germanium ingots/wafers having low micro-pit density (mpd) as well as systems and methods for manufacturing same
06/03/2014CA2607202C High colour diamond layer
06/03/2014CA2548449C Method of incorporating a mark in cvd diamond
05/2014
05/30/2014WO2014081654A1 Fixed cutter drill bit cutter elements including hard cutting tables made from cvd synthetic diamonds
05/30/2014WO2014081604A1 Polycrystalline silicon thick films for photovoltaic devices or the like, and methods of making same
05/30/2014WO2014080573A1 Raw material filling method, method for manufacturing single crystal, and device for manufacturing single crystal
05/30/2014WO2014080566A1 Semiconductor manufacturing apparatus, semiconductor device, and semiconductor device manufacturing method
05/30/2014WO2014080565A1 Soi wafer manufacturing method
05/28/2014EP2735630A1 Sic epitaxial wafer and method for producing same, and device for producing sic epitaxial wafer
05/28/2014EP2735629A1 Method of manufacturing low temperature polysilicon film, thin film transistor and manufacturing method thereof
05/28/2014EP2734661A1 Heating a furnace for the growth of semiconductor material
05/28/2014CN203613306U 一种磷化镓多晶合成备料过程中真空封管装置 One kind of synthetic polycrystalline gallium phosphide preparation process, vacuum sealed tube apparatus
05/28/2014CN203613305U 一种碳化硅单晶的生产装置 A silicon carbide single crystal manufacturing apparatus
05/28/2014CN203613304U 一种用于热交换法生长蓝宝石的热交换器的密封结构 A heat sealing structure grown sapphire heat exchange method used
05/28/2014CN203613303U 一种应用于锗单晶生长的供气系统 Applied to the gas supply system germanium crystal growth
05/28/2014CN203613302U 一种多晶硅铸锭炉氩气导流系统 One kind of polycrystalline silicon ingot furnace argon diversion system
05/28/2014CN203613301U 拉制大直径n型单晶的导流筒 Drawn large diameter n-type monocrystalline draft tube
05/28/2014CN203613300U 一种定向凝固法准单晶硅生长炉 As a directional solidification method quasi-monocrystalline silicon growth furnace
05/28/2014CN103828027A 制造碳化硅衬底的方法和碳化硅衬底 The method of producing a silicon carbide substrate and the silicon carbide substrate
05/28/2014CN103828019A 在硅或类似的基材上制造氮化镓的厚的外延层的方法以及使用所述方法获得的层 Layer, and a method of using the method of manufacturing a GaN epitaxial layer on a silicon substrate or the like to obtain a thickness of
05/28/2014CN103827661A 确定补偿硅样品的掺杂剂含量 Determining the content of the dopant in the silicon sample to compensate
05/28/2014CN103827031A 多晶硅晶锭和定向固化炉 Polysilicon ingots and directional solidification furnace
05/28/2014CN103820862A 一种高温退火硅片的制备方法 Method for preparing high-temperature annealing of the silicon wafer
05/28/2014CN103820861A 一种银纳米线AgNWs材料的定向方法 A method directed silver nanowires AgNWs materials
05/28/2014CN103820860A 一种对苯二甲酸金属盐片晶的制备方法及其应用 An acid preparation method and its application to metal platelets
05/28/2014CN103820859A 掺杂钇铝石榴石陶瓷转变为单晶的制备方法 Doped yttrium aluminum garnet ceramic into a single crystal production method
05/28/2014CN103820858A 一类铒或钬激活ABC<sub>3</sub>O<sub>7</sub>型中红外超快激光晶体 Holmium, erbium, or activate a class ABC <sub> 3 </ sub> O <sub> 7 </ sub> type infrared ultrafast laser crystal
05/28/2014CN103820857A Nd<sup>3+</sup>敏化Er<sup>3+</sup>的镓酸钆锶中红外激光晶体 Nd <sup> 3 + </ sup> sensitized Er <sup> 3 + </ sup> gadolinium gallium strontium mid-infrared laser crystals
05/28/2014CN103820856A Lbo晶体生长原料的合成方法及制备lbo晶体的方法 Synthesis Lbo crystal growth starting material and method of preparing crystals lbo
05/28/2014CN103820855A 一种用于白光LED的Tb<sup>3 +</sup>/Sm<sup>3 +</sup>掺杂LiLuF<sub>4</sub>单晶体及其制备方法 A white LED Tb <sup> 3 + </ sup> / Sm <sup> 3 + </ sup> LiLuF <sub> 4 </ sub> single crystals doped with its preparation method
05/28/2014CN103820854A 一种Ce<sup>3 +</sup>离子掺杂氟化钆锂紫外激光晶体及其制备方法 One kind of Ce <sup> 3 </ sup> + ion doped gadolinium lithium fluoride UV laser crystal and preparation method
05/28/2014CN103820853A 一种用于白光led的掺镝氟化钇钆锂单晶体及其生长方法 White led a doped gadolinium, dysprosium, yttrium lithium fluoride single crystal growth method for its
05/28/2014CN103820852A 一种利用盐酸和四氯化硅制备多晶硅的系统及方法 A use of hydrochloric acid and silicon tetrachloride System and method for preparing the polysilicon
05/28/2014CN103820851A 一种多晶碘化汞薄膜籽晶层的制备方法 Method for preparing polycrystalline mercuric iodide film seed layer
05/28/2014CN103820850A 一种金属有机骨架mof-2多晶膜的制备方法 A metal-organic framework mof-2 prepared polycrystalline films
05/28/2014CN103820849A 一种减压生产12寸单晶硅外延片的工艺 One kind of pressure 12-inch monocrystalline silicon wafer production process
05/28/2014CN103820848A 一种在InP衬底上外延生长II型GaSb/InGaAs量子点的方法 An epitaxially grown on an InP substrate, type II GaSb / InGaAs quantum dot method
05/28/2014CN103820847A 一种区熔法生长大尺寸硅单晶用温度梯度控制装置及方法 One kind of zone melting silicon single crystal growth of large temperature gradient control device and method
05/28/2014CN103820767A 一种改善多晶硅薄膜质量的前处理工艺 A method for improving the quality of polysilicon thin pre-treatment process
05/28/2014CN103818974A 一种胶体NiO纳米晶的制备方法及其产品 One kind of colloidal nanocrystals prepared NiO and their products
05/28/2014CN103818958A 一种提高YVO<sub>4</sub>晶体生长质量的原料合成方法 An increase YVO <sub> Growth Quality 4 </ sub> crystals synthesized method
05/28/2014CN102492986B 一种选区异质外延衬底结构及其制备和外延层生长方法 Heteroepitaxial substrate and the epitaxial layer structure and preparation method of growing a constituency
05/28/2014CN102409405B 多晶硅铸锭炉用碳材料的防碳污染涂层及其制备工艺 Polycrystalline silicon ingot furnace carbon pollution prevention coating and preparation process using carbon material
05/28/2014CN102383191B (103)取向的钇钡铜氧高温超导薄膜的制备方法 Preparation method (103) oriented Y-Ba-Cu-O high-temperature superconductor thin film
05/28/2014CN102337585B 氧化硅玻璃坩埚，硅锭的制造方法 The method of producing silica glass crucible, the ingot
05/28/2014CN102333726B 太阳能级硅的制备方法 Preparation method of a solar grade silicon
05/22/2014WO2014078847A1 Production of high precipitate density wafers by activation of inactive oxygen precipitate nuclei by heat treatment
05/22/2014WO2014078026A1 Laminated aluminum oxide cover component
05/22/2014WO2014077368A1 Silicon carbide single crystal substrate and process for producing same
05/22/2014WO2014077039A1 Method for manufacturing silicon carbide semiconductor device
05/22/2014WO2014076964A1 Storing container, storing container manufacturing method, semiconductor manufacturing method, and semiconductor manufacturing apparatus
05/22/2014WO2014076963A1 SURFACE TREATMENT METHOD FOR SINGLE CRYSTAL SiC SUBSTRATE, AND SINGLE CRYSTAL SiC SUBSTRATE
05/22/2014WO2014076893A1 Seed crystal for sic single-crystal growth, sic single crystal, and method of manufacturing the sic single crystal
05/22/2014WO2014075650A1 Device for non-crucible zone pulling of crystal rods
05/22/2014WO2014075436A1 Cesium boric silicon compound, nonlinear optical crystal of cesium boric silicon, and preparation method therefor and use thereof
05/22/2014US20140138571 Magnetoelectric material and method of manufacturing the same
05/22/2014DE112012003488T5 Direkte Flüssigkeitsinjektion für Halidgasphasen-Epitaxiesysteme sowie Verfahren dafür Direct liquid injection for Halidgasphasen-Epitaxiesysteme and method therefor
05/22/2014DE102005063516B4 Production of silicon semiconductor wafers for fabrication of electronic components comprises controlling ratio of pulling rate to axial temperature gradient to produce agglomerated vacancy defects above critical size in single crystal
05/21/2014EP2733239A1 Sic single crystal and manufacturing process therefor
05/21/2014EP2732078A1 Systems and methods for preparing nanocrystalline compositions using focused acoustics
05/21/2014CN203602755U 晶体生长炉真空管冷却结构 Crystal growth furnace tube cooling structure
05/21/2014CN203602753U 多晶硅化学气相沉积反应器中的叶片冷却结构 A polysilicon chemical vapor deposition reactor in a cooling structure of the blade
05/21/2014CN203602752U 用于生长蓝宝石晶体的籽晶和籽晶夹具 Seed and seed holder for growing sapphire crystals
05/21/2014CN203602751U 氧化铝单晶生长炉的铜环结构 Copper ring structure of alumina single crystal growth furnace
05/21/2014CN203602749U 一种用于拉制六英寸区熔硅单晶的加热线圈 A method for melting silicon single crystal pulling six inches district heating coil
05/21/2014CN103814160A 复合基板、其制造方法、13族元素氮化物构成的功能层的制造方法以及功能元件 Composite substrate, its manufacturing method, a method of manufacturing the functional layer 13 of the nitride elements and functional elements
05/21/2014CN103813983A 定向凝固系统和方法 Directional solidification systems and methods
05/21/2014CN103806104A 一种高Al组分AlGaN薄膜的制备方法 Method for preparing high Al content AlGaN films
05/21/2014CN103806103A 浮区法生长莫来石晶体的方法 Floating zone method mullite crystal growth method
05/21/2014CN103806102A 一种蓝宝石晶体生长热场结构 One kind of sapphire crystal growth thermal field structure
05/21/2014CN103806101A 一种方形蓝宝石晶体的生长方法及设备 One kind of square sapphire crystal growth method and apparatus
05/21/2014CN103806100A 一种五氧化三钛多晶的垂直温梯法生长方法 A method of growing a polycrystalline titanium pentoxide three vertical temperature gradient technique
05/21/2014CN103806099A 五氧化三钛晶体的制备方法 Preparation five titanium oxide crystals
05/21/2014CN103806098A 一种氢氧化镁晶须的制备方法 Method for preparing magnesium hydroxide whisker
05/21/2014CN103806097A 硅循环再利用系统及其方法 Silicon recycling system and method
05/21/2014CN103806096A 坩埚与坩埚硅材的装填方法 The method of filling the crucible with silicon material to the crucible
05/21/2014CN103806092A 一种用于氢化物气相外延的反应器 A hydride vapor phase epitaxy reactor
05/21/2014CN103806090A 一种碱式硫酸镁晶须的制备方法 Method for preparing basic magnesium sulfate whisker
05/21/2014CN103806089A 一种512型碱式硫酸镁晶须的制备方法 Method for preparing basic magnesium sulfate whisker 512
05/21/2014CN103806088A 一种利用三乙醇胺为助剂制备碳酸钙晶须的方法 A use of triethanolamine as assistant method for preparing calcium carbonate whiskers
05/21/2014CN103806087A 一种共载藤黄酸的新型TiO<sub>2</sub>纳米晶须材料的制备方法 Method for preparing a common carrier GA New TiO <sub> 2 </ sub> nanowhisker materials
05/21/2014CN103806086A 一种碱式碳酸镁晶须的制备方法 Method for preparing basic magnesium carbonate whisker
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